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    • 3. 发明专利
    • Vacuum deposition apparatus
    • 真空沉积装置
    • JP2014072358A
    • 2014-04-21
    • JP2012217063
    • 2012-09-28
    • Idemitsu Kosan Co Ltd出光興産株式会社
    • YONEKAWA FUTOSHITOMAI SHIGEKAZUIIZUKA TAKASHITSURUMA YUKI
    • H01L21/363C23C14/34
    • PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus capable of forming a thin film reduced in variations in film quality over an entire substrate surface with a simple structure even when a substrate area is increased.SOLUTION: There is provided a vacuum deposition apparatus 10A for forming a thin film on a substrate 15, in which a shortest path length L from a gas introduction port 16 for a gas to be introduced during deposition to the substrate 15 is five times or more than a mean free path of the gas to be introduced. Spattering pressure during the deposition is preferably 0.1 Pa or more and 2 Pa or less. A path change mechanism 22 is preferably provided between the gas introduction port 16 and the substrate 15.
    • 要解决的问题:提供一种真空沉积设备,即使在衬底面积增加时,也能够以简单的结构在整个衬底表面上形成薄膜质量变化的薄膜。解决方案:提供一种真空沉积设备10A 用于在衬底15上形成薄膜,其中从沉积到衬底15中的待导入气体的气体导入口16的最短路径长度L为要被引导到衬底15的气体的平均自由程的五倍或更多 介绍。 沉积期间的溅射压力优选为0.1Pa以上且2Pa以下。 优选地,在气体导入口16和基板15之间设置路径改变机构22。