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1. 发明专利

JP2008019489A Method for forming zirconia film, method for covering cutting tool for hard alloy, and cutting tool for hard alloy 审中-公开
标题翻译：形成ZIRCONIA膜的方法，用于硬化合金的切割工具的方法和用于硬质合金的切割工具
公开(公告)号：JP2008019489A
公开(公告)日：2008-01-31
申请号：JP2006193897
申请日：2006-07-14
申请人： Hokkaido Electric Power Co Inc:The , Hokkaido Sumiden Seimitsu Kk , Hokkaido Univ , Sumitomo Electric Hardmetal Corp , 住友電工ハードメタル株式会社 , 北海道住電精密株式会社 , 北海道電力株式会社 , 国立大学法人北海道大学
发明人： SHIMADA SHIRO , TSUJINO JIRO , YAMAZAKI ISAO , TSUDA KEIICHI
IPC分类号： C23C16/40 , B23B27/14 , C23C16/513
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a zirconia film with the use of a thermal plasma CVD technique. SOLUTION: The method for forming the zirconia film includes supplying water to a plasma flame when forming the zirconia film on the surface of a substrate with the thermal plasma CVD technique, while using a metal alkoxide solution containing zirconium alkoxide as an essential component, as a raw material. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：提供使用热等离子体CVD技术形成氧化锆膜的方法。解决方案：形成氧化锆膜的方法包括在用等离子体CVD技术在基板的表面上形成氧化锆膜时向等离子体火焰供水，同时使用含有烷氧基锆作为主要成分的金属醇盐溶液，作为原料。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007302948A Method for forming coating film, and cutting tool made from coated hard alloy 审中-公开
标题翻译：形成涂膜的方法和从硬化合金制成的切割工具
公开(公告)号：JP2007302948A
公开(公告)日：2007-11-22
申请号：JP2006132845
申请日：2006-05-11
申请人： Hokkaido Electric Power Co Inc:The , Hokkaido Sumiden Seimitsu Kk , Hokkaido Univ , Sumitomo Electric Hardmetal Corp , 住友電工ハードメタル株式会社 , 北海道住電精密株式会社 , 北海道電力株式会社 , 国立大学法人北海道大学
发明人： SHIMADA SHIRO , TSUJINO JIRO , YAMAZAKI ISAO , TSUDA KEIICHI
IPC分类号： C23C16/507 , B23B27/14
摘要： PROBLEM TO BE SOLVED: To form a coating film having high adhesiveness on the surface of a substrate, by using a thermal plasma CVD technique. SOLUTION: In order to form a ceramic coating film containing at least one compound selected from the group consisting of a carbide, a nitride and a boride on the surface of a hard alloy which is obtained by sintering a powder of a metal carbide and a metal of a binder, this film-forming method comprises: the first step of irradiating the surface of the hard alloy with thermal plasma to modify the surface into a surface to be treated; and the second step of forming the coating film on the surface to be treated by using the thermal plasma CVD technique which uses a solution of a metal alkoxide as a raw material. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使用热等离子体CVD技术在基板的表面上形成具有高粘合性的涂膜。解决方案：为了在硬质合金的表面上形成含有至少一种选自碳化物，氮化物和硼化物的化合物的陶瓷涂膜，该硬质合金是通过烧结金属碳化物粉末而获得的和粘合剂的金属，该成膜方法包括：用热等离子体照射硬质合金表面的第一步骤，将表面改性成待处理的表面; 以及通过使用以金属醇盐溶液为原料的热等离子体CVD技术在待处理表面上形成涂膜的第二工序。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007176709A METHOD FOR PRODUCING SiC-CONTAINING SHEET 有权
标题翻译：生产含SiC片材的方法
公开(公告)号：JP2007176709A
公开(公告)日：2007-07-12
申请号：JP2005373682
申请日：2005-12-27
申请人： Hokkaido , Hokkaido Univ , 北海道 , 国立大学法人北海道大学
发明人： SHIMADA SHIRO , KUDO KAZUHIKO
IPC分类号： C04B35/565 , B01D39/00 , B01D39/20 , C04B35/56
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an SiC-containing sheet having suitable strength from a composite sheet comprising silicon and a carbon component required for producing SiC from crutch scrap or the like. SOLUTION: In the method for producing an SiC-containing sheet including: preheating a composite sheet; and heat treatment at 1,400 to 1,600°C, the composite sheet comprises at least either cellulose or synthetic fiber; at least either carbon powder or carbon fiber; diatomaceous earth; and phenolic resin, and also, at least the preheating is performed in a volatile component atmosphere from the composite sheet. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：待解决的问题：提供一种由含有硅和由拐杖废料等制造SiC所需的碳成分的复合片材制成具有合适强度的含SiC片材的方法。＆lt;解决方案＆gt;在含有SiC的片材的制造方法中，包括：预热复合片材; 并且在1400至1600℃下进行热处理，所述复合片材至少包含纤维素或合成纤维; 至少碳粉或碳纤维; 硅藻土和酚醛树脂，并且至少在复合片材的挥发性成分气氛中进行预热。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2010040480A Material of electrode, electrode, lithium-ion battery, electric double-layered capacitor, manufacturing method for material of electrode 审中-公开
标题翻译：电极，电极，锂离子电池材料，双层电容器，电极材料制造方法
公开(公告)号：JP2010040480A
公开(公告)日：2010-02-18
申请号：JP2008205526
申请日：2008-08-08
申请人： Hokkaido Univ , National Institute Of Advanced Industrial & Technology , Oita Univ , 国立大学法人北海道大学 , 国立大学法人大分大学 , 独立行政法人産業技術総合研究所
发明人： TSUMURA TOMOKI , SHIMADA SHIRO , KIYONO HAJIME , TANAIKE OSAMU
IPC分类号： H01M4/58 , H01G11/02 , H01G11/22 , H01G11/30 , H01G11/46 , H01G11/84 , H01G11/86
CPC分类号： Y02E60/13
摘要： PROBLEM TO BE SOLVED: To provide a material of an electrode capable of using for a battery electrode or a capacitor electrode as the material of an electrode which can perform quick charge and discharge and has conductivity without using any conductive assistant, to provide an electrode, and to provide a manufacturing method for a material of an electrode.
SOLUTION: The material of an electrode uses a nitride compound obtained by heating titanium oxide (hereafter, called as TiO
2 ) with a large specific surface area at a designated temperature and to partially nitride. The electrode which is used for a battery and a capacitor and is excellent on quick charge and discharge can be attained on the basis of the material of an electrode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够使用电池电极或电容器电极的电极的材料作为可以执行快速充放电且具有导电性而不使用任何导电助剂的电极的材料，以提供电极，并提供电极材料的制造方法。解决方案：电极的材料使用通过在指定温度下加热具有大的比表面积的钛氧化物（以下称为TiO 2 SBS 2 ）而获得的氮化物，并部分地进行氮化。用于电池和电容器并且在快速充电和放电方面优异的电极可以基于电极的材料来实现。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008024544A Germanium-doped gallium nitride crystal and method for producing the same 审中-公开
标题翻译：锗酸钠玻璃水晶及其制造方法
公开(公告)号：JP2008024544A
公开(公告)日：2008-02-07
申请号：JP2006198296
申请日：2006-07-20
申请人： Hokkaido Univ , Sumitomo Seika Chem Co Ltd , 住友精化株式会社 , 国立大学法人北海道大学
发明人： SHIMADA SHIRO , MIURA YOKO , MIZOBUCHI FUMIAKI
IPC分类号： C01B21/06
摘要： PROBLEM TO BE SOLVED: To easily and stably obtain high luminance germanium-doped gallium nitride crystals of high quality as a phosphor material at a low cost.
SOLUTION: Solid digallium trioxide (Ga
2 O
3 ) is thermally reduced using a reducing agent, so as to produce digallium monoxide (Ga
2 O) gas. Solid germanium dioxide (GeO
2 ) is thermally reduced using a reducing agent, so as to produce germanium monoxide (GeO) gas. Digallium monoxide is brought into reaction with ammonia (NH
3 )-containing gas in the presence of the germanium monoxide gas, so as to produce germanium (Ge)-doped gallium nitride (GaN) crystals.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：以低成本容易且稳定地获得高质量的高亮度锗掺杂氮化镓晶体作为荧光体材料。解决方案：使用还原剂热固化三氧化二铝（Ga 2 3 ），以产生一氧化二锑（Ga SB> O）气体。使用还原剂热还原固体二氧化锗（GeO 2 ），以产生一氧化锗（GeO）气体。在一氧化碳气体存在下，使一氧化二氢与含有氨（NH 3 SB 3）的气体反应，以产生锗（Ge）掺杂的氮化镓（GaN）晶体。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2006089811A Vapor phase crystal creation apparatus 审中-公开
标题翻译：蒸气相晶体创造装置
公开(公告)号：JP2006089811A
公开(公告)日：2006-04-06
申请号：JP2004277270
申请日：2004-09-24
申请人： Hokkaido Univ , Japan Steel Works Ltd:The , 国立大学法人北海道大学 , 株式会社日本製鋼所
发明人： SHIMADA SHIRO , MIYAKI TAKAAKI , GOTO TOSHIMITSU , ONISHI KEIZO
IPC分类号： C23C16/448 , C23C16/34 , C30B29/38 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To use a gas produced by the reduction reaction of raw material oxide with a reducing material as the gaseous starting material of the crystals of GaN or the like.
SOLUTION: A vapor phase crystal creation apparatus is equipped with: a reduction reaction part where a gaseous starting material is produced by the reaction of an oxide raw material with a reducing material; a crystal growth reaction part where the gaseous starting material produced in the above and another gaseous starting raw material are reacted to produce and grow crystals; and a sealed reaction vessel 1 provided with the reduction reaction part and the crystal growth reaction part inside. In the reduction reaction part and the crystal growth reaction part, atmospheric temperature is independently controllable by heaters 2a, 2b or the like, respectively. In this way, a desired amount of gaseous starting material can be inexpensively and stably feed. In the crystal growth reaction part, desired crystals are efficiently produced/grown. Further, by controlling the amount of the gaseous starting material to be fed, the crystals in the desired forms of a needle shape, a feather shape, a planar shape and a film shape can be obtained.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：使用原料氧化物的还原反应产生的气体与还原材料作为GaN等晶体的气态原料。解决方案：气相晶体生成装置配备有还原反应部分，其中通过氧化物原料与还原材料的反应产生气态原料; 使上述制造的气态原料和另一种气态起始原料反应的结晶生长反应部分生成和生长晶体; 以及内部具有还原反应部和晶体生长反应部的密闭反应容器1。在还原反应部分和晶体生长反应部分中，大气温度分别由加热器2a，2b等独立控制。以这种方式，可以廉价和稳定地进料所需量的气态原料。在晶体生长反应部分中，有效地生产/生长所需的晶体。此外，通过控制待进料的气态原料的量，可以获得所需形状的针状，羽状，平面形状和膜形状的晶体。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2011056438A Metal-deposited crystalline boron nitride composite material, method for producing the same and use of the same 审中-公开
标题翻译：金属沉积型晶体氮化物复合材料及其制造方法及其使用方法
公开(公告)号：JP2011056438A
公开(公告)日：2011-03-24
申请号：JP2009210803
申请日：2009-09-11
申请人： Hokkaido Univ , 国立大学法人北海道大学
发明人： SHIMADA SHIRO , OHASHI TOSHIMASA
IPC分类号： B01J27/24 , B01J35/08 , C01B3/22 , C01B21/064 , H01M8/06
CPC分类号： Y02E60/50
摘要： PROBLEM TO BE SOLVED: To provide a material useful as a catalyst which has such high selectivity that by-products such as dimethyl ether can be restrained from being produced when used for decomposing alcohol to produce hydrogen and which can work at low temperature and to provide the catalyst using the material for decomposing alcohol, and a method for producing hydrogen from alcohol by using the catalyst. SOLUTION: The material useful as the catalyst is such a composite material of boron nitride with a metal that the metal is fixed on the surface of a crystalline boron nitride particle. A method for producing the composite material and the composite material-including catalyst for decomposing alcohol are provided. A method for producing a decomposition product of alcohol comprises a step of bringing alcohol into contact with the composite material to decompose a hydrocarbon compound. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供可用作催化剂的材料，其具有如下选择性：当用于分解醇以产生氢并且可在低温下工作时可以抑制诸如二甲醚的副产物的生产并且使用用于分解醇的材料提供催化剂，以及通过使用催化剂从醇生产氢的方法。解决方案：可用作催化剂的材料是氮化硼与金属的复合材料，金属固定在结晶氮化硼颗粒的表面上。提供了一种复合材料的制造方法和含有复合材料的催化剂，用于分解醇。醇的分解产物的制备方法包括使醇与复合材料接触以分解烃化合物的步骤。版权所有（C）2011，JPO＆INPIT

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