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1. 发明专利

JPS6191433A Clean room 失效
标题翻译：整理房间
公开(公告)号：JPS6191433A
公开(公告)日：1986-05-09
申请号：JP21137584
申请日：1984-10-11
申请人： Hitachi Ltd , Hitachi Plant Eng & Constr Co Ltd
发明人： SAIKI ATSUSHI , SUZUKI MICHIO , SUNAMI HIDEO , ASAI SHOJIRO , MAKI MICHIYOSHI , ASAMI KINICHIRO
IPC分类号： F24F7/06 , F24F3/16 , F24F7/10
CPC分类号： F24F3/161 , F24F7/10
摘要： PURPOSE:To make it possible to make a super clean space where the diffusion of dusts and dirts is small by setting a small opening degree of floor plates close to an under-floor return port, and setting a large opening degree of floor plates farther from the return port. CONSTITUTION:The opening degree of floor plates 6 are made larger from the position of an air return port 8 successively in the order of a region (a), a region (b) and a region (c). As a result, in the air flow the concentration of an air current to parts close to the air return port 8 is reduced as shown by arrow 11, and the horizontal air flow is substantially eliminated. Thus, the air flow becomes substantially a vertical air flow, and a down flow is realized. As a result, diffusion of dusts and dirts can be prevented, and improvements in the yield of the product and reliability therefor are realized.
摘要翻译：目的：通过将地板板的小开度设置在靠近底板返回口的地方，可以使粉尘和污垢扩散的超洁净空间变小，并将较大的开口度设置在更低的地板上返回端口。构成：按照区域（a），区域（b）和区域（c）的顺序，从空气返回口8的位置开始使地板6的开度更大。结果，在空气流动中，如箭头11所示，气流对接近空气返回口8的部分的浓度降低，并且基本上消除了水平空气流。因此，空气流变成基本上垂直的空气流，实现向下流动。结果，可以防止粉尘和污垢的扩散，从而实现产品的产量提高和可靠性的提高。

2. 发明专利

JPS6191434A Clean room 失效
标题翻译：整理房间
公开(公告)号：JPS6191434A
公开(公告)日：1986-05-09
申请号：JP21137684
申请日：1984-10-11
申请人： Hitachi Ltd , Hitachi Plant Eng & Constr Co Ltd
发明人： SAIKI ATSUSHI , SUZUKI MICHIO , SUNAMI HIDEO , ASAI SHOJIRO , MAKI MICHIYOSHI , ASAMI KINICHIRO
IPC分类号： F24F7/06 , F24F3/16 , F24F7/10
CPC分类号： F24F7/10 , F24F3/161
摘要： PURPOSE:To prevent dust from diffusing from a region where dust is liable to be generated to a region where cleanness should be maintained by providing a difference in the air flow speeds depending on the character of the region so that the blow-off speed of the air flow in a passing region becomes greater than that in a working region. CONSTITUTION:When as a blow-off air flow from a filter 4, the blow-off speed in a working region 6a is made larger than a blow-off air flow speed in a passing region 6b, air on the low air flow side is induced to the high air flow side. Thus, dust is diffused by offsetting to the high air flow speed side, and air on the low speed side has a low dust concentration. Hence, diffusion of dust to the low air flow side cannot almost be observed. As a result, the yield of the product and reliability therefor can be improved.
摘要翻译：目的：为了防止灰尘从易于产生灰尘的区域扩散到通过根据该区域的特性提供空气流速的差异来保持清洁度的区域，使得吹扫速度通过区域中的空气流量变得大于工作区域中的空气流量。构成：作为来自过滤器4的吹出空气流，工作区域6a中的吹出速度大于通过区域6b中的吹出空气流速，低气流侧的空气为诱导到高气流侧。因此，灰尘通过偏移到高空气流速侧而扩散，低速侧的空气的灰尘浓度低。因此，几乎不能观察到灰尘向低空气流侧的扩散。结果，可以提高产品的产量和可靠性。

3. 发明专利

JPH10173148A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPH10173148A
公开(公告)日：1998-06-26
申请号：JP33337296
申请日：1996-12-13
申请人： HITACHI LTD
发明人： MATSUOKA HIDEYUKI , YAMANAKA TOSHIAKI , SUNAMI HIDEO , KIMURA SHINICHIRO , ITO KIYOO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To reduce the heights of storage capacitance sections by folding an insulating film formed between lower and upper electrodes in a trench. SOLUTION: A metallic plug 2 is exposed by making a trench into an interlayer insulating film 1. Then, after polycrystalline silicon 4 is deposited on the plug 2 and again exposing the plug 2 by etching the silicon 4, a capacitor insulating film 5 is formed. A titanium nitride 6 is deposited on the insulating film 5 and the film 5 is exposed by etching the nitride 6 on the bottom of the trench. After the plug 2 is exposed by working the insulating film 5 in the peripheral section and on the bottom of the trench and polycrystalline silicon 7 is deposited on the plug 2, a capacitor insulating film 501 is formed. Successively, a titanium nitride 9 is deposited and, after etching the insulating films 5 and 501 by dry etching, another titanium nitride 10 is deposited. Therefore, both the internal and external side face sections of a lower electrode can be used as storage capacitance sections.

4. 发明专利

JPH08274281A MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPH08274281A
公开(公告)日：1996-10-18
申请号：JP12433196
申请日：1996-05-20
申请人： HITACHI LTD
发明人： KIMURA SHINICHIRO , KAWAMOTO YOSHIFUMI , KAGA TORU , SUNAMI HIDEO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： PURPOSE: To dispense with an alignment operation that conductive layers stacked up above a switching transistor are aligned with the switching transistor by a method wherein conductive films are deposited on a first and a second interlayer insulating film, patterned, and partially formed into the conductive layers of required pattern which extend over the first and the second interlayer insulating film. CONSTITUTION: A conductive film 1-10 is formed on a semiconductor substrate 1-1, a first interlayer insulating film 1-11 is deposited on the conductive film 1-10, the films 1-10 and 1-11 are patterned and partially extended over a gate electrode 1-4, and a first patterned conductive layer which the first interlayer insulating film 1-11 has left is formed thereon. A second interlayer insulating film 1-12 is formed on the side of the first patterned conductive layer through anisotropic etching. Thereafter, other conductive films are deposited on the first and the second interlayer insulating film, 1-11 and 1-12, and patterned into a second patterned conductive layer 1-13 which is partially extended over the interlayer insulating films 1-11 and 1-12. Therefore, a wiring structure which enhances a semiconductor memory device in storage capacity can be realized.

5. 发明专利

JPH0579887B2 失效
公开(公告)号：JPH0579887B2
公开(公告)日：1993-11-05
申请号：JP21137684
申请日：1984-10-11
申请人： HITACHI LTD , HITACHI PLANT ENG & CONSTR CO
发明人： SAIKI ATSUSHI , SUZUKI MICHIO , SUNAMI HIDEO , ASAI SHOJIRO , MAKI MICHOSHI , ASAMI KINICHIRO
IPC分类号： F24F7/06 , F24F3/16 , F24F7/10
摘要： PURPOSE:To prevent dust from diffusing from a region where dust is liable to be generated to a region where cleanness should be maintained by providing a difference in the air flow speeds depending on the character of the region so that the blow-off speed of the air flow in a passing region becomes greater than that in a working region. CONSTITUTION:When as a blow-off air flow from a filter 4, the blow-off speed in a working region 6a is made larger than a blow-off air flow speed in a passing region 6b, air on the low air flow side is induced to the high air flow side. Thus, dust is diffused by offsetting to the high air flow speed side, and air on the low speed side has a low dust concentration. Hence, diffusion of dust to the low air flow side cannot almost be observed. As a result, the yield of the product and reliability therefor can be improved.

6. 发明专利

JPH0426217B2 失效
公开(公告)号：JPH0426217B2
公开(公告)日：1992-05-06
申请号：JP14639483
申请日：1983-08-12
申请人： HITACHI LTD
发明人： KURE TOKUO , SUNAMI HIDEO , KAWAMOTO YOSHIFUMI
IPC分类号： H01L27/10 , G11C11/401 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108

7. 发明专利

JPS6467982A NONSLIDE SWITCH 失效
公开(公告)号：JPS6467982A
公开(公告)日：1989-03-14
申请号：JP22392287
申请日：1987-09-09
申请人： HITACHI LTD
发明人： SUNAMI HIDEO , NISHINO JUICHI , MIYAUCHI KATSUMI
IPC分类号： H01L39/16
摘要： PURPOSE:To realize a switch having no mechanical slide and high reliability by utilizing the fact that, when a thin superconducting film is irradiated with light, heat or lines of magnetic force, it becomes a normal conductive state. CONSTITUTION:A thin-film superconductor 1 itself does not function as a switch. It is connected with a power source 8 resistors 8. One portion of the superconductor is set to a normal conductive state by irradiating that portion with external energy, and potential changes at connections 12 contact 12 are introduced to amplifiers 10 to drive switches 11. Thus, a phenomenon that, when a critical current or more is fed, a superconducting state is destroyed to become a normal conductive state as the defect of the superconducting film can be avoided.

8. 发明专利

JPS647511B2 失效
公开(公告)号：JPS647511B2
公开(公告)日：1989-02-09
申请号：JP10394578
申请日：1978-08-28
申请人： HITACHI LTD
发明人： TANIDA JUJI , HAGIWARA TAKAAKI , SUNAMI HIDEO , ITO YOKICHI , KONDO RYUJI , MINAMI SHINICHI
IPC分类号： H01L27/112 , H01L21/8246 , H01L21/8247 , H01L29/788 , H01L29/792

9. 发明专利

JPS6430248A FORMATION OF ON-THE-TRENCH INSULATION FILM 失效
公开(公告)号：JPS6430248A
公开(公告)日：1989-02-01
申请号：JP18548187
申请日：1987-07-27
申请人： HITACHI LTD
发明人： KAGA TORU , KIMURA SHINICHIRO , KURE TOKUO , KAWAMOTO YOSHIFUMI , SUNAMI HIDEO
IPC分类号： H01L27/04 , H01L21/316 , H01L21/32 , H01L21/334 , H01L21/763 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To form an SiO2 film uniform in thickness on an Si-filled trench for the realization of an enhanced breakdown strength by a method wherein a field oxide film is formed by using a selective oxidation method involving an Si3N4 film, a trench is provided, the trench is filled with polycrystalline silicon, and then oxidation is done. CONSTITUTION:A LOCOS (Local Oxidation of Silicon) oxide film 14 is formed, an Si3N4 film 34 and an SiO2 are attached thereto, with an Si3N4 film 13 and a thin oxide film 31 formed thereon retained, the LOCOS oxide film 14 and other insulating films are then subjected to required processes, and a trench is provided with the SiO2 film 33 serving as a mask. An Si3N4 film 34 is formed for the protection of the trench walls, the SiO2 film 33 is removed in a water solution of HF, the wall-protecting Si3N4 film 34 is removed, and a capacitor insulating film 35 is formed. Polycrystalline silicon 16 is placed in the trench, the Si3N4 film 32 only is removed by using heated phosphoric acid for example, and oxidation is accomplished for the formation of a quality SiO2 film 36.

10. 发明专利

JPS63318130A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPS63318130A
公开(公告)日：1988-12-27
申请号：JP15330687
申请日：1987-06-22
申请人： HITACHI LTD
发明人： KAGA TORU , SUNAMI HIDEO , TAMURA MASAO , OKUDAIRA SADAYUKI , FUNAKOSHI KIYOHIKO , YOSHIHIRO NAOJI , TSUNEKAWA SUKEYOSHI , TAKAHASHI SHIGERU
IPC分类号： H01L21/316 , H01L21/22 , H01L21/26 , H01L21/31 , H01L21/318 , H01L21/324
摘要： PURPOSE:To improve the controllability both in the thickness of an oxide film and the depth of impurity diffusion conducted by annealing by a method wherein the temperature of one place on a wafer is measured with time, and the result of the conversion processing conducted using a function is integrated with time. CONSTITUTION:A gas composition measurement is conducted with time by the inflared-ray thermometer 16 of a temperature measurement and gas analytical device from the beginning of a heat treatment, and the result of said measurement is sent to the function processing device 19 in a control device 18. At this point, when the object of control is the thickness of an SiO2 film, the thickness attained each hour is computed using a specific function formula, for example. Whether the SiO2 film thickness reached the desired thickness is judged by a judgement device 112. When the desired thickness is achieved, gas is stopped by operating a gas flow rate control device 15 or the power source 13 of a halogen lamp is turned off, and the accurate SiO2 film thickness is obtained. As a result, the controllability both in the thickness of oxide film and the depth of impurity diffusion obtained by an annealing can be improved.

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