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1. 发明专利

JPS6174366A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6174366A
公开(公告)日：1986-04-16
申请号：JP19472784
申请日：1984-09-19
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： HOYA KAZUO , WATABE TOMOYUKI , HAIJIMA MIKIO , TAKIGAWA AKIRA , HAYASHI MAKOTO
IPC分类号： H01L21/8226 , H01L21/331 , H01L27/082 , H01L29/73 , H01L29/732
CPC分类号： H01L29/7325
摘要： PURPOSE:To improve the withstand voltage of a p-n-p subtransistor without increasing the manhour by a method wherein an n-type impurity of the concentration higher than that of the n-type Si layer is diffused in the n-type Si layer including the junction parts, which are formed of the n-type Si layer and the p-type diffusion layers. CONSTITUTION:An n type Si layer 2 is isolated by groove parts 3, and a region I, a region II and a region III are respectively used as a p-n-p sub-transistor forming part, an n-p-n transistor forming part and an IIL forming part. Donors are ion-implanted in the surfaces of the regions I and III, and GN (high- concentration n-type) regions II are formed. As a result, elongation of a depletion layer, which spreads from the substrate p-type layer, is reduced. Accordingly, the withstand voltage of the p-n-p sub-transistor can be improved.
摘要翻译：目的：为了提高pnp副晶体管的耐受电压，而不增加工作空间，其中浓度比n型Si层高的n型杂质扩散到包含接合部分的n型Si层中由n型Si层和p型扩散层形成。构成：n型Si层2被沟槽部分3隔离，区域I，区域II和区域III分别用作pnp子晶体管形成部分，npn晶体管形成部分和IIL 形成部分。在区域I和III的表面离子注入供体，形成GN（高浓度n型）区域II。结果，从衬底p型层扩散的耗尽层的伸长率降低。因此，可以提高p-n-p子晶体管的耐受电压。

2. 发明专利

JPS6126325A Logic circuit 失效
标题翻译：逻辑电路
公开(公告)号：JPS6126325A
公开(公告)日：1986-02-05
申请号：JP14684684
申请日：1984-07-17
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： OKABE TAKAHIRO , HAYASHI MAKOTO , NORISUE KATSUHIRO , FURUHATA MAKOTO , WATABE TOMOYUKI , WASHIO YOSHITADA
IPC分类号： H03K19/091 , H03K19/177
摘要： PURPOSE: To decrease power consumption by dividing a logic circuit having lots of input line numbers into plural circuit blocks with a few number of input lines and using only a part while bringing them into the operating state.
CONSTITUTION: The 1st logic circuit DEC
ϕ inputs the 1st input group IW
1 , and is provided with j-set of output terminals D
1 ∼D
j , and outputs AND output through the combination of input signals. Only a part of optional logic circuits DEC
1 ∼ DEC
j is brought into the operating state by using a function of the circuit DEC
ϕ so as to provide a proper signal to the input line group IW
1 . Since only one among the j-set of logic circuits DEC
1 ∼DEC
j is operative, the power consumption is reduced remarkably in comparison with the conventional logic circuit.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过将具有大量输入行号的逻辑电路划分为具有少数输入线的多个电路块并且仅使部件同时使其进入工作状态来降低功耗。构成：第一逻辑电路DECphi输入第一输入组IW1，并提供j组输出端子D1-Dj，并通过输入信号的组合输出AND输出。只有部分可选逻辑电路DEC1- DECj通过使用电路DECphi的功能进入运行状态，以向输入线组IW1提供适当的信号。由于在j组的逻辑电路DEC1〜DECj中只有一个是可操作的，所以与传统的逻辑电路相比，功耗明显降低。

3. 发明专利

JPS6127669A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6127669A
公开(公告)日：1986-02-07
申请号：JP14753584
申请日：1984-07-18
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： WASHIO KATSUYOSHI , HAYASHI MAKOTO , WATABE TOMOYUKI , OKABE TAKAHIRO , NORISUE KATSUHIRO
IPC分类号： H01L21/74 , H01L21/764 , H01L21/8226 , H01L27/02 , H01L27/082
CPC分类号： H01L27/0244 , H01L21/74 , H01L21/764 , H01L21/8226
摘要： PURPOSE: To enable coexistence of a high density bipolar integrated circuit and an I
2 L of high electric circuit gain, by a method wherein a shallow burying layer is provided at the bipolar integrated circuit region, and a deep burying layer is provided at the I
2 L region.
CONSTITUTION: When an npn transistor 100 and an I
2 L200 are coexisted, for instance in the I
2 L200, electrodes 9 become collectors, an electrode 10 becomes a base and a buried layer 22 becomes an emitter. Behavior is carried out by injecting Hall element from an injector P layer 20' a P layer 20" through N-layers 11. The width of an N
+ type buried layer 22 of the I
2 L region is made larger than that of an N
+ type buried layer 2, and the gammil number are increased substantially, and it is composed so as injected Hall element does not reach to a base plate, and the increasement of electric current gain and the reduction of consuming electric power is contrived.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了实现高密度双极型集成电路和1 <2L的高电路增益的共存，通过在双极集成电路区域设置浅埋入层的方法，并且将深埋层设置在 I 2 L区域。构成：当npn晶体管100和I 2 L200共存时，例如在I 2 L200中，电极9成为集电极，电极10成为基极，埋层22成为发射极。通过从喷射器P层20'，P层20“注入霍尔元件到N层11来执行行为。使I 2 L区域的N +型掩埋层22的宽度更大比N +型埋层2的厚度增加，并且充分增加，并且组成为注入的霍尔元件不会到达基板，并且电流增益的增加和消耗的减少电力被设计了。

4. 发明专利

JPS58200568A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路设备
公开(公告)号：JPS58200568A
公开(公告)日：1983-11-22
申请号：JP8314382
申请日：1982-05-19
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： WATABE TOMOYUKI , HAYASHI MAKOTO , SAKAMOTO MITSUZOU , OKABE TAKAHIRO
IPC分类号： H01L21/8226 , H01L27/02 , H01L27/082
CPC分类号： H01L27/0244
摘要： PURPOSE:To obtain a semiconductor integrated circuit appropriate particularly for an integrated injection logic (I L) circuit wherein elements of excellent high frequency characteristic can be integrated at high density and elements of high withstand voltage and high performance and small signal can be integrated on the same semiconductor substrate. CONSTITUTION:N type buried layers 21 and 22 are formed at the region 100 which forms an N-P-N transistor and the region 200 which forms the I L circuit of a P type Si substrate 1, and an N type epitaxial layer 3 and a SiO2 film 9 are formed. Etching grooves 5 for element isolation are formed by etching. The SiO2 film of the region 200 is removed, and then the region 200 and the groove parts for isolation are etched. A SiO2 film 9 is formed by removing the SiO2 film on the region 100. Each diffused layer of the N-P-N transistor and the I L is formed, then insulation resin 91 of polyimide resin, etc. is coated and removed by leaving only the regions of the grooves 5 for isolation. Thereafter, Al wiring is performed by forming the contact holes of the terminal of each element.
摘要翻译：目的：为了获得特别适用于集成注入逻辑（I 2 L）电路的半导体集成电路，其中优异的高频特性的元件可以以高密度积分，高耐受电压和高性能以及小信号的元件可以是集成在相同的半导体衬底上。构成：在形成NPN晶体管的区域100和形成P型Si衬底1的I 2 L电路的区域200以及N型外延层中形成N +型埋层21和22 3和SiO 2膜9。用于元件隔离的蚀刻槽5通过蚀刻形成。去除区域200的SiO 2膜，然后蚀刻区域200和用于隔离的槽部分。通过去除区域100上的SiO 2膜形成SiO 2膜9.形成NPN晶体管和I 2 L的每个扩散层，然后仅留下聚酰亚胺树脂等的绝缘树脂91 槽5的区域用于隔离。此后，通过形成每个元件的端子的接触孔来执行Al布线。

5. 发明专利

JPS6156510A Logic circuit 失效
标题翻译：逻辑电路
公开(公告)号：JPS6156510A
公开(公告)日：1986-03-22
申请号：JP16245484
申请日：1984-07-31
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： OKABE TAKAHIRO , HAYASHI MAKOTO , NORISUE KATSUHIRO , WATABE TOMOYUKI , WASHIO KATSUYOSHI , OGURA SADAO , FURUHATA MAKOTO , KONDO SHIZUO
IPC分类号： H03K19/088 , H03K19/177
摘要： PURPOSE: To increase the switching speed of a basic logic circuit of a TTL and furthermore to decrease the power consumption with division of blocks, by connecting the collectors and emitters of the 1st and 2nd multi-emitter transistors respectively in order to extract the minor carrier stored in a transistor.
CONSTITUTION: When only an input I1 is changed to an earth potential level among those inputs I1∼I5 which are all kept at high potential levels, the current of a constant current source IM with flows to the base of a transistor (TR)QM11 flows to the input I1 through the 1st emitter of the TRQM11. Thus this TRQM11 conducts and the collector voltage is set quickly at about an earth voltage level by a current amplifying action. As a result, both TRs QN11 and QN21 conduct instantaneously and at the same time a TRQM21 conducts through an added circuit line Y. Both TRs QP11 and QP21 are put under non- conduction states with the non-conduction state of the TRQN21, and the base current of the TRQM21 is set at zero.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了提高TTL的基本逻辑电路的开关速度，并且通过分别连接第一和第二多发射极晶体管的集电极和发射极，分割块来降低功耗，以便提取次载波存储在晶体管中。构成：当所有输入端I1都保持在高电位电平时，只有输入端I1变为接地电位电平时，流入晶体管（TR）QM11的基极的恒流源IM的电流流过通过TRQM11的第一个发射器输入到I1。因此，该TRQM11导通，并且通过电流放大动作将集电极电压快速设置在大约接地电压电平。结果是，TRs QN11和QN21都瞬间导通，同时TRQM21通过加电路线Y导通.TRS QP11和QP21都被置于具有TRQN21的非导通状态的非导通状态，并且 TRQM21的基极电流设置为零。

6. 发明专利

JPS6113660A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6113660A
公开(公告)日：1986-01-21
申请号：JP13316884
申请日：1984-06-29
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： WASHIO KATSUYOSHI , WATABE TOMOYUKI , OKABE TAKAHIRO , HAYASHI MAKOTO , NORISUE KATSUHIRO
IPC分类号： H01L27/082 , H01L21/761 , H01L21/8226 , H01L27/02
CPC分类号： H01L27/0233
摘要： PURPOSE:To increase the gains of an I L element while reducing power consumption by augmenting the concentration of an n layer corresponding to a base section in a lateral P-N-P transistor and elevating the concentration of an injector. CONSTITUTION:N layers 100 for reducing an unnecessary current component flowing out to an injector under the state of grounding from a base 63 and an unnecessary current component flowing out to the outside through a section under a collar 74 for an I L are formed to an injector section (between 64 and 63) and near the section under the collar 74. Consequently, effective current gains are elevated. In the constitution, since there is no layer 100 just under collectors 73, the base width (spaces among the collectors 73 and an N epitaxial layer 3) does not vary even when impurity concentration in the layers 100 scatters, thus obtaining uniform characteristics. The injector 64 for the I L is formed in a p layer, thus preventing the increase of power consumption.
摘要翻译：目的：通过增加对应于侧面P-N-P晶体管中的基极部分的n层的浓度并提高注入器的浓度来增加I <2> L元件的增益，同时降低功耗。构成：N层100，用于在从基座63接地的状态下减少流入喷射器的不必要的电流分量，以及通过用于I 2 L的轴环74下的部分流出到外部的不必要的电流分量，形成到喷射器部分（64和63之间）并且靠近轴环74下的部分。因此，有效的电流增益被提高。在该结构中，由于刚好在集电体73下方没有层100，即使层100中的杂质浓度飞散，基极宽度（集电体73和N +外延层3之间的空间）也不变化，从而获得均匀特点用于I 2 L的喷射器64形成在p +层中，从而防止功率消耗的增加。

7. 发明专利

JP2007171135A Cask for spent fuel 审中-公开
标题翻译：储存燃油
公开(公告)号：JP2007171135A
公开(公告)日：2007-07-05
申请号：JP2005373069
申请日：2005-12-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAKANE KAZUOKI , HAYASHI MAKOTO
IPC分类号： G21C19/32 , G21F5/008 , G21F5/012
摘要： PROBLEM TO BE SOLVED: To provide a cask for spent fuel capable of enhancing a heat transfer property between a basket and a barrel main body, and capable of enhancing heat removal performance.
SOLUTION: This cask is provided with the barrel body 3 for shielding a γ-ray, a neutron shielding body 10 provided in an outer circumferential side of the barrel body 3, and a basket part 4 assembled lattice-likely with a plurality of basket plates 14a-14d, 15a-15d, 16a-16d, 17a-17d insertion-supported by a plurality of grooves 13 formed on an inner circumferential face of the barrel body 3, and for forming a plurality of sections for storing spent fuel assemblies 2, and the plurality of basket plates 14a-14d, 15a-15d, 16a-16d, 17a-17d are layeredly arranged each other along an axial direction of the barrel body 3, by engaging fellow slits 18 formed in a portion crossed mutually with the first basket plate groups 14, 16 aligned in parallel each other toward a lateral direction, and the second basket plate groups 15, 17 aligned in parallel each other toward a vertical direction right-angled to the lateral direction.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提高篮状物和筒主体之间的传热性的乏燃料用的容器，能够提高除热性能。解决方案：该容器设有用于屏蔽γ射线的筒体3，设置在筒体3的外周侧的中子屏蔽体10和可以多个晶格组合的篮部4，由形成在筒体3的内周面上的多个槽13插入支撑的篮板14a-14d，15a-15d，16a-16d，17a-17d，并形成多个用于储存乏燃料的部分组合体2，并且多个篮板14a-14d，15a-15d，16a-16d，17a-17d沿着筒体3的轴向彼此层叠布置，通过接合形成在相互交叉的部分中的相邻狭缝18 其中第一筐板组14,16朝向横向方向平行排列，并且第二筐板组15,17相对于沿横向方向成直角的垂直方向对齐。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006200939A Spent fuel container basket and spent fuel storage vessel 审中-公开
标题翻译：燃油集装箱和燃油储存船
公开(公告)号：JP2006200939A
公开(公告)日：2006-08-03
申请号：JP2005010645
申请日：2005-01-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ISHII YOSHIHIKO , FUJIMURA KOJI , ISHII KAZUYA , KUMAGAI NAOKI , HAYASHI MAKOTO , UENO MANABU , HINO TETSUSHI
IPC分类号： G21F5/012 , G21C19/32 , G21F9/36
摘要： PROBLEM TO BE SOLVED: To provide a spent fuel container basket which has grid type compartments, utilizes a box of cake structure using continuous members reaching the both ends in the radial direction of the container basket, maintains the function of ensuring strength and a function of maintaining subcriticality and a heat conduction function and suppresses the increase of weight and the outer diameter of the container basket.
SOLUTION: The spent fuel container basket forming a fuel assembly containing space 10 piles in the axial direction of a fuel assembly, crossing unit plates of a plate member 4a which is formed a plurality of notches 41a, 41a... on both of long sides along the longitudinal direction, has penetration holes 42a, 42a in the longitudinal direction, bearing a strength ensuring function and subcriticality maintaining function and a part of heat conduction function, and a plate 6a having a plurality of notches 61a, 61a... on both of long sides along the longitudinal direction and bearing heat conduction function.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种具有栅格型隔室的废燃料容器篮，利用连续构件在容器篮的径向方向上到达两端的饼块结构，保持了强度的功能，维持亚临界和热传导功能的功能，并且抑制容器篮的重量和外径的增加。解决方案：在燃料组件的轴向方向上形成燃料组件的空燃料容器筐形成多个凹口41a，41a ...的板构件4a的单元板，沿长度方向的长边沿长度方向具有贯通孔42a，42a，具有确保功能和亚临界保持功能和一部分导热功能的强度，以及具有多个切口61a，61a的板6a。在长方向的长边两侧均承受导热功能。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004309235A Shock absorber for cask 有权
标题翻译：震动吸收器
公开(公告)号：JP2004309235A
公开(公告)日：2004-11-04
申请号：JP2003101075
申请日：2003-04-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIRANO ATSUYA , HAYASHI MAKOTO , SHIMIZU HITOSHI
IPC分类号： G21C19/32 , G21C19/06 , G21F5/008 , G21F5/08 , G21F9/36
摘要： PROBLEM TO BE SOLVED: To mitigate an impact load and to suppress the deformation upon the dropping of an impact shock absorber of a cask for the transportation and storage of a spent fuel.
SOLUTION: The impact shock absorber 9, 10 is constituted by filling wood or a woody board inside and enclosing it with a shell 21. End peripheral parts 11, 11', a center part 14, middle parts 12, 12', and peripheral angle parts 13, 13' corresponding respectively to a horizontal dropping load, a vertical dropping load and a corner dropping load are arranged. The fiber direction is selected in accordance with a material characteristic of the wood, namely, the radial horizontal direction to the wood for the horizontal dropping load, the axial (vertical) direction to the wood for the vertical dropping load, and the radial horizontal direction to the wood for the corner dropping load. A laminated structure of thin boards may be used as the wood for the horizontal dropping load.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了减轻冲击载荷并抑制在用于运输和储存乏燃料的桶的冲击减震器的下落时的变形。冲击减震器9,10由内部填充木材或木质板材构成，并用壳体21包围。端部周边部分11,11'，中心部分14，中间部分12,12'，并且配置分别对应于水平下落载荷，垂直落下载荷和角落下降载荷的周角部13,13'。纤维方向根据木材的材料特性选择，即水平落下载荷对木材的径向水平方向，垂直落下载荷对木材的轴向（垂直）方向和径向水平方向到木头为拐角下降负荷。可以使用薄板的层压结构作为用于水平下落载荷的木材。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2000306217A MAGNETO-RESISTANCE EFFECT HEAD AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JP2000306217A
公开(公告)日：2000-11-02
申请号：JP11179499
申请日：1999-04-20
申请人： HITACHI LTD
发明人： IWASAKI TOMIO , MIURA HIDEO , HAYASHI MAKOTO , KOYANAGI HIROAKI
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording and reproducing device adaptable to a high recording density magnetic disk by realizing a high performance magneto-resistance effect sensor of thin type and with high reliability. SOLUTION: A magnetic head 4 is formed by laminating in turn the first magnetic layer of a ferromagnetic film directly on a non-magnetic substrate film, a non-magnetic layer on the first magnetic layer, and the second magnetic layer of a ferromagnetic film directly on the non-magnetic layer. The ferromagnetic film on the above non-magnetic substrate layer is formed of nickel(Ni), cobalt(Co), iron(Fe), or these alloys. The non-magnetic film at the lower surface of the first magnetic layer is formed of ruthenium(Ru), iridium(Ir), osmium(Os), or these alloys. The temperature of the substrate when the non-magnetic film contacting the lower surface of the first magnetic layer is formed is 400 to 1,200 K.

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