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1. 发明专利

JP2003344029A Method and apparatus for measuring three-dimensional shape and dimension of fine pattern in semiconductor wafer 有权
标题翻译：用于测量三维形状的尺寸和尺寸在半导体波形中的精细图案的方法和装置
公开(公告)号：JP2003344029A
公开(公告)日：2003-12-03
申请号：JP2002156103
申请日：2002-05-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SASAZAWA HIDEAKI , NAKADA TOSHIHIKO , WATANABE MASAHIRO , MATSUMOTO SHUNICHI
IPC分类号： G01B11/02 , G01B11/24 , G01Q60/00 , H01L21/027 , H01L21/66
CPC分类号： G01B11/02 , G01B11/24
摘要： PROBLEM TO BE SOLVED: To rapidly measure a three-dimensional shape and a dimension of an arbitrary shape two-dimensional pattern in a semiconductor device by using an effective profile.
SOLUTION: In the method, profiles 25a,..., of patterns being formed in a resist process are obtained respectively from different combinations of the amount of exposure and focal values by using an exposure development simulation, thereby generating a profile matrix 25. Furthermore, intensity distributions of scattering light 26a,..., are obtained respectively for the profiles by computing them, thereby generating a scattering light library 26. Then, a profile library composed of the profile matrix 25 and the scattered light library 26 is made up. The intensity distribution of a measured pattern is compared with the intensity distributions in the scattered light library 26, and the profile in the profile matrix 25 corresponding to the intensity distribution in the scattered light library 26 having the highest conformity in above comparison is selected as the three- dimensional shape of the measured pattern.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过使用有效轮廓来快速测量半导体器件中的任意形状二维图案的三维形状和尺寸。解决方案：在该方法中，通过使用曝光显影模拟分别从曝光量和焦点值的不同组合获得在抗蚀剂工艺中形成的图案的形状25a，...，从而生成轮廓矩阵此外，通过计算它们分别获得散射光26a，...的强度分布，从而生成散射光库26.然后，由轮廓矩阵25和散射光库26构成的轮廓文库是组成的将测量图案的强度分布与散射光库26中的强度分布进行比较，并将与上述比较中具有最高一致性的散射光库26中的强度分布对应的轮廓矩阵25中的轮廓选择为测量图案的三维形状。版权所有（C）2004，JPO

2. 发明专利

JP2003068599A Method for detecting abnormality of aligner and method for producing semiconductor using it 审中-公开
标题翻译：用于检测对准器异常的方法和使用其制造半导体的方法
公开(公告)号：JP2003068599A
公开(公告)日：2003-03-07
申请号：JP2001251145
申请日：2001-08-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MIZUMOTO HISASHI , YOSHITAKE YASUHIRO , MATSUMOTO SHUNICHI , MIWA TOSHIHARU , MIYAMOTO YOSHIYUKI
IPC分类号： G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To find out the cause of an alignment error quickly and to take a countermeasure because it cannot be pursued although an alignment error can be detected by inspecting alignment after exposure and various causes of an alignment error are possible because some abnormality is occurring. SOLUTION: Measurements of alignment detected at the time of exposure are collected for each wafer and a decision is made whether an abnormality is present or not by performing operation. When a decision is made that an abnormality is present, abnormality is displayed on a living room terminal through a network and a countermeasure is taken by inspecting the cause of the abnormality.
摘要翻译：要解决的问题：为了快速找出对准错误的原因并采取对策，尽管通过检查曝光后的对准可以检测到对准误差，并且可能导致对准误差的各种原因，因为一些异常是发生。解决方案：对于每个晶片收集在曝光时检测到的取向的测量，并且通过执行操作来确定是否存在异常。当作出异常的判断时，通过网络在客厅终端上显示异常，并且通过检查异常的原因来采取对策。

3. 发明专利

JP2005300553A Defect inspection device and method 有权
标题翻译：缺陷检查装置和方法
公开(公告)号：JP2005300553A
公开(公告)日：2005-10-27
申请号：JP2005172304
申请日：2005-06-13
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device and method, capable of improving detection sensitivity and throughput by realizing, at the detecting of defects, such as a foreign matter generated in a manufacturing process for forming a pattern on a substrate to produce an object, a linear high-efficiency lighting from a direction on which no diffracted light from the pattern is incident in order to reduce the diffracted light, and setting a threshold according to the dispersion of signals by patterns. SOLUTION: Scattered light, from the pattern that causes dispersion of signals, is reduced by a high-efficiency lighting optical system, lighting from a direction reducing the scattered light from the pattern, and the detection threshold is reduced by a means which sets the threshold, based on the dispersion of signals calculated each area within a chip, whereby improvement in the detection sensitivity and improvement in throughput are realized. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种缺陷检查装置和方法，其能够通过在检测诸如在用于在基板上形成图案的制造工艺中产生的异物等缺陷的检测来提高检测灵敏度和生产率为了产生物体，从不存在来自图案的衍射光入射的方向的线性高效照明，以便减少衍射光，并根据图案的信号色散设置阈值。解决方案：通过高效率照明光学系统减少来自引起信号色散的图案的散射光，从减少来自图案的散射光的方向进行照明，并且通过以下方式减少检测阈值：基于芯片内每个区域计算的信号的色散设置阈值，从而实现检测灵敏度的提高和吞吐量的提高。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005127830A Shape profile measuring device and manufacturing method of semiconductor device using it 有权
标题翻译：形状配置测量装置和使用其的半导体器件的制造方法
公开(公告)号：JP2005127830A
公开(公告)日：2005-05-19
申请号：JP2003363105
申请日：2003-10-23
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHITAKE YASUHIRO , MATSUMOTO SHUNICHI
IPC分类号： G01B11/24 , G01B11/30 , G03F7/20 , H01L21/027 , H01L21/66
CPC分类号： G01B11/30 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a shape profile measuring device capable of realizing highly accurate measurement of a fine short-wavelength pattern by imparting a scatterometer device for solving the problem of grazing incidence in the case of using a reflection type objective lens and the problem of chromatic aberration in the case of using the reflection type objective lens. SOLUTION: In this shape profile measuring device for performing shape profile measurement by collation between a measured spectral waveform and a simulation waveform, vertical incidence can be realized by using one concave mirror 21 and one convex mirror 22 as an image formation system and by using an optical system wherein the image side is on the same side as the object side to the concave mirror 21, namely, by using an Offner type lens as the reflection type objective lens, and since only a vertical reflection component can be detected, the collation between the simulation waveform and the measured waveform becomes possible, to thereby realize highly-accurate short-wavelength measurement. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形状轮廓测量装置，其能够通过在使用反射型物镜的情况下赋予用于解决掠入射问题的散射仪装置来实现精细的短波长图案的高精度测量以及在使用反射型物镜的情况下的色像差的问题。解决方案：在该形状轮廓测量装置中，通过使用一个凹面镜21和一个凸面镜22作为图像形成系统，可以通过测量的光谱波形与模拟波形之间的对比来进行形状轮廓测量，从而实现垂直入射，通过使用其中图像侧与凹面镜21的物体侧在同一侧上的光学系统，即通过使用偏光型透镜作为反射型物镜，并且由于仅可以检测到垂直反射分量，模拟波形与测量波形之间的对比是可能的，从而实现高精度的短波长测量。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004093718A Display apparatus 审中-公开
公开(公告)号：JP2004093718A
公开(公告)日：2004-03-25
申请号：JP2002252343
申请日：2002-08-30
申请人： Hitachi Device Eng Co Ltd , Hitachi Ltd , 日立デバイスエンジニアリング株式会社 , 株式会社日立製作所
发明人： MATSUMOTO SHUNICHI , MATSUDATE NORIHARU
IPC分类号： G02F1/1333 , G02F1/1345 , G09F9/00
CPC分类号： G02F1/133615 , G02F2001/133334 , G02F2201/503
摘要： PROBLEM TO BE SOLVED: To suppress luminance unevenness of display images by relaxing pressure applied to a display panel from a frame-like member and dispersing charge generated on the display panel to the frame-like member, in a display apparatus including a display panel and the conductive frame-like member overlapping on edges of its display screen.
SOLUTION: Conductive resin is attached to an end part of a conductive film extendedly existing from the display screen of the display panel to its periphery and having light transmissivity, before completion of a crosslinking reaction, and the crosslinking reaction is proceeded until the conductive resin shows a desired resilience. Thus, the conductive resin formed on the end part of the conductive film serves as a buffer material being disposed between the display panel and the frame-like member, since it shows high resistivity 100 times or more of its own resistivity and gives capacitance at an interface between itself and the conductive film, and also serves as a current path for sweeping out charge generated at the display panel from the conductive film to the frame-like material. The conductive resin prevents breakage of the conductive film due to charge release from the display panel to the frame-like material by the interface resistivity between the conductive film and the conductive resin.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004022848A Manufacturing system and method for semiconductor device 审中-公开
公开(公告)号：JP2004022848A
公开(公告)日：2004-01-22
申请号：JP2002176534
申请日：2002-06-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MATSUMOTO SHUNICHI , YOSHITAKE YASUHIRO
IPC分类号： G03F7/207 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To solve the problem that, in a manufacturing process of a semiconductor device, especially, in limited production of diversified products such as a system LSI, an optimization job for exposure causes increase in TAT in device manufacturing and decline in operation rate of an exposure apparatus.
SOLUTION: A focus offset in the exposure of a device product is different for each product, exposure layer, and exposure apparatus. The focus offset is calculated for various causes, as (1) a focus position of a projection optical system of an exposure apparatus and an offset of a focus sensor (offset caused by apparatus), (2) a focus offset determined by pattern conditions for an exposure layer of a device product and an aberration of the projection optical system of the exposure apparatus (offset caused by pattern), and (3) a focus offset of the exposure apparatus caused by a process wafer corresponding to the exposure layer of the device product (offset caused by process). An optimal focus position for exposure of a product which is determined based on the calculated focus offsets is set in a recipe, and then exposure is executed.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2004014764A Wavefront aberration measurement device, aligner, and semiconductor device manufacturing system and method 有权
公开(公告)号：JP2004014764A
公开(公告)日：2004-01-15
申请号：JP2002165481
申请日：2002-06-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHITAKE YASUHIRO , MATSUMOTO SHUNICHI
IPC分类号： G01M11/02 , G03F7/20 , H01L21/027
CPC分类号： G03F7/706
摘要： PROBLEM TO BE SOLVED: To provide a wavefront aberration measurement device, an aligner, and a semiconductor device manufacturing system and a method, which are capable of realizing a very accurate exposure by taking a very small change over aging in wavefront aberration into consideration so as to manufacture an ultraminiaturized semiconductor device with high yield, even when margins become narrow with ultraminiaturization of the semiconductor device. SOLUTION: In an aligner, a pattern generates light that spreads evenly on the pupil of a projection optical system on a reticle stage, a relay lens is provided to serve as a conjugate point of the pupil plane of the optical system, a main plane is arranged at the conjugate point of the pupil plane of the optical system formed of the relay lens, and the wavefront aberration measurement device is provided. The wavefront measurement device is equipped with a lens array forming a large number of the secondary images of the pattern by dividing the wavefront of light coming from the primary image of the pattern formed on the image plane of the optical system, an imaging device which images a large number of the secondary images of the pattern formed by the lens array and outputs a large number of pattern signals, and a processing means which calculates the sagittal of the projection optical system on the basis of a large number of the pattern signals obtained from the imaging device. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003007584A Method and system for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的方法和系统
公开(公告)号：JP2003007584A
公开(公告)日：2003-01-10
申请号：JP2001185770
申请日：2001-06-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHITAKE YASUHIRO , MATSUMOTO SHUNICHI , MIWA TOSHIHARU , MIYAMOTO YOSHIYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To solve the problem of an advanced shrinkage device that a single aligner is used from the first step to the last step in order to avoid misalignment due to the difference of strain between exposing lenses but lowering in the availability of an expensive aligner due to the increase of work-in-process and the occurrence of waiting time blocks cost reduction.
SOLUTION: In the method for manufacturing a semiconductor device, strain of lens, coma and writing error of reticle are measured previously, the combination of an aligner and their correction values satisfying the regulation of the relevant process/product is calculated dynamically from shot size, device pattern and illumination conditions and then work using an aligner satisfying the regulation is designated.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了解决从第一步骤到最后一个步骤使用单个对准器的先进收缩装置的问题，以避免由于曝光透镜之间的应变差而导致的未对准，但是降低了昂贵的可用性由于工作中的增加和等待时间块成本降低的发生，对准器。解决方案：在半导体器件的制造方法中，先前测量了透镜的应变，光瞳的误差和写入误差，对于匹配器及其校正值的组合，满足相关工艺/产品的调节，从投射尺寸，指定设备图案和照明条件，然后使用满足规定的对准器进行工作。

9. 发明专利

JP2006330007A Defect inspection device and its method 有权
标题翻译：缺陷检查装置及其方法
公开(公告)号：JP2006330007A
公开(公告)日：2006-12-07
申请号：JP2006238838
申请日：2006-09-04
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defect inspection device and its method capable of improving detection sensitivity and throughput by setting a threshold value corresponding to the dispersion of signal depending on a pattern by realizing highly effective illumination on a straight line from a direction where no diffracted light enters at the time of detecting the defect such as foreign matter etc., generated in the manufacturing process of an object while forming a pattern on the substrate. SOLUTION: By a highly effective illumination system illuminating from the direction of reducing the diffraction light from the pattern, the dispersed light from the pattern being the cause of the dispersion of the signal is reduced. Further, the threshold value is reduced by a threshold setting means from the calculated dispersion of signal for every region in the chip. Consequently, the detection threshold value is reduced and the detection sensitivity is improved and the improvement of the throughput is realized. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题：提供一种缺陷检查装置及其方法，该缺陷检查装置及其方法能够通过根据图案设置与信号的色散相对应的阈值，从而通过在直线上实现高效照明来提高检测灵敏度和吞吐量在检测在物体的制造过程中产生的缺陷（例如异物等）的同时在衍射光线入射的方向，同时在基板上形成图案。解决方案：通过从减少来自图案的衍射光的方向照明的高效照明系统，来自图案的分散光是信号分散的原因。此外，根据芯片中每个区域的计算的信号色散，阈值设置装置减小阈值。因此，检测阈值降低，检测灵敏度提高，吞吐量提高。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2004301847A Defects inspection apparatus and method 有权
公开(公告)号：JP2004301847A
公开(公告)日：2004-10-28
申请号：JP2004146031
申请日：2004-05-17
申请人： Hitachi High-Tech Electronics Engineering Co Ltd , Hitachi Ltd , 日立ハイテク電子エンジニアリング株式会社 , 株式会社日立製作所
发明人： NOGUCHI MINORU , OSHIMA YOSHIMASA , NISHIYAMA HIDETOSHI , MATSUMOTO SHUNICHI , KENBO YUKIO , MATSUNAGA RYOJI , SAKAI SHIGETOSHI , NINOMIYA TAKANORI , WATANABE TETSUYA , NAKAMURA HISATO , JINGU TAKAHIRO , MORISHIGE YOSHIO , CHIKAMATSU SHUICHI
IPC分类号： G01B11/30 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a defects inspection apparatus and a method with an improved detection sensitivity and throughput by realizing a high-efficiency illumination on a straight line from a direction into which diffracted light is not introduced to reduce the diffracted light from a pattern and setting a threshold according to fluctuations in signal by pattern, when detecting defects such as foreign substances which appear in a fabrication process fabricating an object by forming the pattern on a substrate. SOLUTION: Scattered light from the pattern leading to fluctuations in signal is reduced by a high-efficiency illumination optical system which allows illumination from a direction which reduces diffracted light from the pattern. A detection threshold is reduced by a means which sets the threshold based on fluctuations in signal calculated for each region in a chip. An improvement in detection sensitivity and throughput is thereby realized. COPYRIGHT: (C)2005,JPO&NCIPI

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