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1. 发明专利

JP2012004381A Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2012004381A
公开(公告)日：2012-01-05
申请号：JP2010138524
申请日：2010-06-17
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI , HIROCHI SHIYU , TAKANO SATOSHI , HORII RITSUO , KAWAHATA MAKOTO
IPC分类号： H01L21/677 , H01L21/027
CPC分类号： H01L21/67196 , H01J37/32743 , H01J37/32788 , H01J37/32889 , H01J37/32899 , H01L21/67201
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which receives less amount of a radiation heat influence from a substrate having a higher temperature on a substrate having a lower temperature when plural substrates are cooled in one cooling chamber thereby suppressing reduction in cooling rate of the substrate having the lower temperature.SOLUTION: The substrate processing apparatus comprises a load lock chamber for housing substrates individually in multiple stages, a first transport mechanism having a fist conveyance arm provided with an end effector for transporting a substrate from one side of the load lock chamber to the inside or to the outside of the load lock chamber, a second transport mechanism having a second conveyance arm provided with an end effector for transporting a substrate from another side of the load lock chamber to the inside or to the outside of the load lock chamber, barrier plates each provided between and away from the substrates supported by substrate support parts disposed in the load lock chamber for blocking heat of the substrate from each other, and a barrier plate accessory provided between the substrate support part and the barrier plate and in a space other than a standby space of the end effector for approaching a substrate housed above the barrier plate to absorb radiation heat from the substrate.
摘要翻译：要解决的问题：提供一种在一个冷却室中冷却多个基板时，在具有较低温度的基板上从较高温度的基板接收较少量的辐射热影响的基板处理设备，从而抑制具有较低温度的基板的冷却速度。解决方案：基板处理装置包括用于分别以多级容纳基板的负载锁定室，第一输送机构，其具有设置有端部执行器的第一输送臂，用于将基板从负载锁定室的一侧输送到在负载锁定室的内部或外部，具有第二输送臂的第二输送机构，所述第二输送臂设置有端部执行器，用于将基板从负载锁定室的另一侧输送到负载锁定室的内部或外部，每个挡板设置在设置在装载锁定室中的基板支撑部分支撑的基板之间和远离基板之间，用于阻挡基板的热量;以及阻挡板附件，设置在基板支撑部分和阻挡板之间并且在空间中除了端部执行器的备用空间之外，用于接近容纳在阻挡板上方的衬底以吸收辐射热fr 底物。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012054536A Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2012054536A
公开(公告)日：2012-03-15
申请号：JP2011130994
申请日：2011-06-13
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI , MATSUURA NAOYA
IPC分类号： H01L21/677 , B65G49/07 , H01L21/205 , H01L21/3065
CPC分类号： F27B17/0025 , F27D3/0084 , H01L21/67109 , H01L21/67115 , H01L21/6719 , H01L21/67196 , H01L21/67742
摘要： PROBLEM TO BE SOLVED: To reduce overheat of a substrate transfer robot in a substrate processing apparatus and prevent the degradation of the reliability of the substrate transfer robot and the reduction of the robot's life.SOLUTION: A substrate processing apparatus includes: a transfer chamber in which substrates are transferred under negative pressure; processing chambers connecting to the transfer chamber and in which heating treatment is performed on the substrates; a transfer robot provided in the transfer chamber and transferring the substrates to the inside or outside of each processing chamber, and a cooling part cooling an inner wall of the transfer chamber.
摘要翻译：要解决的问题：为了减少基板处理装置中的基板传送机器人的过热，并且防止基板传送机器人的可靠性的劣化和机器人的寿命的降低。解决方案：基板处理装置包括：转印室，其中基板在负压下转印; 连接到传送室的处理室，并且对基板进行加热处理; 设置在传送室中的传送机器人，并且将基板传送到每个处理室的内部或外部;以及冷却部件，其冷却传送室的内壁。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010010423A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2010010423A
公开(公告)日：2010-01-14
申请号：JP2008168425
申请日：2008-06-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI
IPC分类号： H01L21/677 , C23C16/44 , H01L21/22 , H01L21/31 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To prevent trouble caused when opening a valve after the temperature of the valve is dropped.
SOLUTION: In a substrate processing apparatus with a conveyance chamber 301 to convey a wafer to a processing chamber 201 to process the wafer, a conveyance port 247 to pass the wafer provided between the processing chamber 201 and the conveyance chamber 301, a valve 244c to open and close the conveyance port 247, a seal member 244d provided between the valve 244c and the conveyance body 247, a heater 244e provided in the valve 244c, and a cylinder device 244a to drive the valve 244c, a monitor TC244g is provided in the valve 244c, the cylinder device 244a is controlled not to open the valve 244c when the monitor temperature of the monitor TC244g becomes a set temperature or less, and an alarm is generated.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止在阀门的温度下降后打开阀门时引起的故障。解决方案：在具有将晶片输送到处理室201以处理晶片的输送室301的基板处理装置中，使设置在处理室201和输送室301之间的晶片通过的输送口247，阀244c打开和关闭输送口247，设置在阀244c和输送体247之间的密封构件244d，设置在阀244c中的加热器244e和驱动阀244c的气缸装置244a，监视器TC244g 设在阀244c中，当监视器TC244g的监视温度变为设定温度以下时，气缸装置244a被控制为不打开阀244c，产生报警。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2013197232A Substrate processing device, substrate processing method, method for manufacturing semiconductor device, program for executing the method, and recording medium storing program 审中-公开
标题翻译：基板处理装置，基板处理方法，制造半导体器件的方法，执行方法的程序和记录中间存储程序
公开(公告)号：JP2013197232A
公开(公告)日：2013-09-30
申请号：JP2012061471
申请日：2012-03-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI , MATSUURA NAOYA , FUKUDA MITSURU , OGAWA HIROYUKI
IPC分类号： H01L21/677
CPC分类号： H01L21/67718 , H01L21/67011 , H01L21/67098 , H01L21/67115 , H01L21/67126 , H01L21/67703 , H01L21/67739 , H01L21/67745 , H01L21/68785
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device, a substrate processing method, a method for manufacturing a semiconductor device, a program for executing the method, and a recording medium storing the program, capable of improving device manufacturing throughput.SOLUTION: A substrate processing device comprises: a substrate to be processed; a transportation chamber in which the substrate to be transported is provided in a vacuum atmosphere; a substrate transportation unit which transports the substrate provided in the transportation chamber; at least two processing chambers provided adjacent to the transportation chamber and for processing the substrate; gate valves respectively provided between the transportation chamber and the processing chambers; and a control unit which controls the substrate transportation unit and the gate valves. The control unit controls opening and closing of the at least two gate valves during substrate transportation by the substrate transportation unit.
摘要翻译：要解决的问题：提供一种基板处理装置，基板处理方法，半导体装置的制造方法，执行该方法的程序以及存储程序的记录介质，能够提高装置的制造能力。解决方案：A 基板处理装置包括：待加工基板; 输送室，其中待运输的基板设置在真空气氛中; 基板输送单元，其输送设置在所述输送室内的基板; 至少两个处理室，设置在所述传送室附近并用于处理所述衬底; 分别设置在输送室和处理室之间的闸阀; 以及控制单元，其控制基板输送单元和闸阀。控制单元在基板输送单元的基板输送期间控制至少两个闸阀的打开和关闭。

5. 发明专利

JP2004111788A Substrate treatment equipment 有权
公开(公告)号：JP2004111788A
公开(公告)日：2004-04-08
申请号：JP2002274763
申请日：2002-09-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： INADA TETSUAKI , HIGASHIDA MASANOBU , YASUI TAKESHI
IPC分类号： C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment which can improve maintainability. SOLUTION: In the substrate treatment equipment comprising a treatment chamber, exhaust means for exhausting the treatment gas in the treatment chamber, a first exhaust pipe for communicating the treatment chamber with the exhausting means and a second exhaust pipe for passing the treatment gas which is exhausted from the exhaust means, heating means for heating the first exhaust pipe is arranged around the first exhaust pipe, and at least in a part of the second exhaust pipe, the part having a vertical component is arranged. At the lower end of the part having the vertical component, a collecting container for collecting the treatment gas after condensed in the second exhaust pipe is arranged. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004128383A Substrate processing system 审中-公开
公开(公告)号：JP2004128383A
公开(公告)日：2004-04-22
申请号：JP2002293473
申请日：2002-10-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI
IPC分类号： H01L21/677 , H01L21/31 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing system capable of compensating for the reduction in the cooling efficiency in a vacuum.
SOLUTION: In a multi-chamber CVD system provided with a CVD chamber applying CVD to a wafer 1 and a transfer chamber 11 with a wafer mount device 18 installed thereon, when a high-temperature wafer 1 is carried from the CVD chamber to a cooling chamber 14 via the transfer chamber 11 by means of a tweezer 18a of the wafer mount device 18, the wafer 1 is carried while approaching the ceiling face of the transfer chamber 11 so as to efficiently dissipate the heat of the wafer to the ceiling face only with radiation thereby efficiently cooling the wafer 1 during the transfer. Cooling in advance the wafer at a high cooling efficiency during the transfer compensates for a deficiency in the cooling capability of only the radiation so as to reduce the time until the wafer is cooled to a desired temperature even when the cooling chamber has the same degree of vacuum as that of the transfer chamber and to prevent a deterioration in the throughput, the performance and the reliability or the like.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2013197475A Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device 审中-公开
标题翻译：基板加工装置，基板加工方法及制造半导体装置的方法
公开(公告)号：JP2013197475A
公开(公告)日：2013-09-30
申请号：JP2012065419
申请日：2012-03-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI , YASUI TAKESHI , MATSUURA NAOYA
IPC分类号： H01L21/02 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a substrate processing method, and a method of manufacturing a semiconductor device, capable of shortening transportation time for transporting a substrate to be processed, for improved throughput.SOLUTION: A substrate processing apparatus 10 includes a vacuum transportation chamber 103 which forms a transportation space 104, a vacuum transportation robot 112 for transporting a substrate 200 to be processed, a plurality of process chambers 201a and the like, an auxiliary transportation chamber 122 and the like, and a controller 281. The controller 281 controls the vacuum transportation robot 112 so that, when the substrate 200 to be processed is transported between one of the plurality of process chambers 201a and the like and the auxiliary transportation chamber 122 and the like, the substrate 200 to be processed does not pass other two or more process chambers where the substrate 200 to be processed is transported, among the plurality of process chambers 201a and the like.
摘要翻译：要解决的问题：提供能够缩短用于输送待处理基板的输送时间的基板处理装置，基板处理方法和半导体装置的制造方法，以提高生产量。解决方案：基板处理装置10 包括形成运送空间104的真空输送室103，输送被处理基板200的真空输送机器人112，多个处理室201a等，辅助输送室122等，以及控制器281 控制器281控制真空输送机器人112，使得当要处理的基板200在多个处理室201a中的一个和辅助输送室122等之间传送时，要处理的基板200 不经过其他两个或更多个处理室，其中待处理的衬底200被输送在多个处理室201a等上。

8. 发明专利

JP2010153453A Substrate processing apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2010153453A
公开(公告)日：2010-07-08
申请号：JP2008327544
申请日：2008-12-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI
IPC分类号： H01L21/673 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To automate an operation on a dummy wafer during cleaning of a process module without adding a load port dedicated to the dummy wafer by eliminating troublesome management on the dummy wafer. SOLUTION: The present invention relates to a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a plurality of processing furnaces 136 to 139 for processing wafers, preliminary chambers 122 and 123 for temporarily storing the wafers, a first transfer device 112 for conveying the wafers between the processing furnaces 136 to 139 and preliminary chambers 122 and 123, and a second transfer device 124 for conveying the wafers to the preliminary chambers 122 and 123, wherein a dummy wafer shelf 202 for storing the dummy wafer different from a product wafer 200 is provided in a second conveyance chamber 121 where the second transfer device 124 is installed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在清洁处理模块的过程中，通过消除对虚拟晶片的麻烦管理，不需要增加专用于虚设晶片的负载端口，能够在虚拟晶片上自动化操作。解决方案：本发明涉及基板处理装置和半导体装置的制造方法。基板处理装置包括用于处理晶片的多个处理炉136至139，用于临时存储晶片的预备室122和123，用于在处理炉136至139和预置室122和123之间输送晶片的第一传送装置112 以及用于将晶片传送到预备室122和123的第二传送装置124，其中用于存储与产品晶片200不同的虚设晶片的虚拟晶片架202设置在第二传送室121中，在第二传送室121中，已安装。版权所有（C）2010，JPO＆INPIT

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