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1. 发明专利

JP2012222167A Substrate processing apparatus and manufacturing method of substrate 审中-公开
标题翻译：基板加工设备及其制造方法
公开(公告)号：JP2012222167A
公开(公告)日：2012-11-12
申请号：JP2011086864
申请日：2011-04-09
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROCHI SHIYU , SATO AKIHIRO , ITO TAKESHI , NISHIDO SHUHEI
IPC分类号： H01L21/205 , C23C16/46 , G01J5/06
摘要： PROBLEM TO BE SOLVED: To prevent the accurate temperature measurement conducted by a radiation thermometer from being inhibited due to smears of a view port.SOLUTION: A substrate processing apparatus includes: a boat holding multiple substrates; a cylindrical heating material provided so as to enclose the boat and forming a reaction chamber; a reaction pipe provided so as to enclose the cylindrical heating material; a cylindrical heat insulation part provided between the cylindrical heating material and the reaction pipe; a chip for temperature measurement provided between the cylindrical heating material and the cylindrical heat insulation part; a radiation thermometer measuring a temperature by radiation light being entered from the chip for temperature measurement; a view port provided between the chip for temperature measurement and the radiation thermometer and transmitting the radiation light from the chip for temperature measurement; and a blow nozzle provided at a clearance between the cylindrical heating material and the cylindrical heat insulation part and having a first gas supply port supplying an inactive gas to the view port.
摘要翻译：要解决的问题：为了防止辐射温度计进行的精确的温度测量由于视口的污迹而被禁止。解决方案：基板处理装置包括：容纳多个基板的船; 圆柱形加热材料，其设置成封闭船形成反应室; 设置为包围圆筒形加热材料的反应管; 设置在圆筒形加热材料和反应管之间的圆柱形绝热部件; 在圆柱形加热材料和圆柱形隔热部件之间提供用于温度测量的芯片; 辐射温度计，用于从用于温度测量的芯片进入的辐射光测量温度; 设置在用于温度测量的芯片和辐射温度计之间的视口，并传输来自芯片的辐射光用于温度测量; 以及设置在所述圆筒形加热材料和所述圆筒形绝热部件之间的间隙处的吹嘴，并且具有向所述视口提供非活性气体的第一气体供给口。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011060910A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011060910A
公开(公告)日：2011-03-24
申请号：JP2009207412
申请日：2009-09-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIZUGUCHI YASUHIRO , OKUNO MASANORI , SAITO KAZUTO , HIROCHI SHIYU
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/31 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus reducing the cost of an exhaust system.
SOLUTION: The substrate processing apparatus includes a process chamber where a substrate is processed, a transfer chamber 12 provided with a transfer unit transferring the substrate to the process chamber, a plurality of decompressable spare chambers 14a, 14b coupled to the transfer chamber, an exhaust unit 50 connected to the spare chambers, a plurality of exhaust valves 61-63 respectively controlling exhaust of the spare chambers, second control means 89 controlling the exhaust valves, a plurality of exhaust valves 61-63 respectively controlling exhaust of the spare chambers, a second control means 89 controlling the exhaust valves, and a first control means 86 controlling the exhaust valves so that one of the exhaust valves is opened while the other exhaust valves are in a standing-by state to be opened.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供降低排气系统成本的基板处理装置。解决方案：基板处理装置包括处理基板的处理室，设置有将基板传送到处理室的转印单元的转印室12，连接到转印室的多个可减压的备用室14a，14b ，连接到备用室的排气单元50，分别控制备用室的排气的多个排气阀61-63，控制排气阀的第二控制装置89，分别控制备用排气的多个排气阀61-63 控制排气阀的第二控制装置89，以及控制排气门的第一控制装置86，使排气门中的一个打开，而另一个排气门处于打开的待机状态。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009164365A Method of manufacturing semiconductor device and substrate treatment device 审中-公开
标题翻译：制造半导体器件和衬底处理器件的方法
公开(公告)号：JP2009164365A
公开(公告)日：2009-07-23
申请号：JP2008000956
申请日：2008-01-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIYAMA MAKOTO , TSUNODA TORU , HIROCHI SHIYU
IPC分类号： H01L21/3065
CPC分类号： H01L21/6719 , G03F7/427 , H01J37/321 , H01L21/31138 , H01L21/67196 , H01L21/67201
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the occurrence of a popping phenomenon in a resist removal process and reducing residue formed on a substrate, and to provide a substrate treatment device. SOLUTION: Oxygen gas and hydrogen gas are supplied to a plasma generating chamber 430 so that a composition ratio of hydrogen is more than 3 when a composition ratio of oxygen is 1. The oxygen gas and hydrogen gas are plasma-reacted in the plasma generating chamber 430, and a resist is removed from a surface of a wafer 600 housed in a treatment chamber 445 provided continuously to the plasma generating chamber 430. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方法：提供一种制造半导体器件的方法，所述半导体器件能够抑制抗蚀剂去除工艺中的突发现象的发生并减少形成在衬底上的残留物，并提供衬底处理器件。解决方案：当氧的组成比为1时，氧气和氢气被供应到等离子体产生室430，使得氢的组成比大于3。氧气和氢气在等离子体反应中等离子体发生室430和抗蚀剂从容纳在连续提供到等离子体产生室430的处理室445中的晶片600的表面去除。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2014175494A Substrate processing apparatus, substrate processing method, manufacturing method of semiconductor device, and manufacturing method of substrate 审中-公开
标题翻译：基板处理装置，基板处理方法，半导体装置的制造方法以及基板的制造方法
公开(公告)号：JP2014175494A
公开(公告)日：2014-09-22
申请号：JP2013047226
申请日：2013-03-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROCHI SHIYU , ITO TAKESHI , SASAKI SHINYA , YAMAGUCHI TENWA , NISHIDO SHUHEI , SHIRAKO KENJI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which replaces a furnace internal member during the maintenance etc. and thereby inhibits a metal contamination level from becoming high.SOLUTION: A substrate processing apparatus includes: a processing chamber which stores a substrate holder for holding multiple substrates 60 while forming spaces between the substrates 60 in longitudinal direction and processes the substrates 60; a process gas supply part which supplies a process gas to the processing chamber; and a process gas supply nozzle 40 which is connected with the process gas supply part and supplies the process gas to the processing chamber. In the process gas supply nozzle 40, at least one gas supply hole 52 is provided at each side of a line 100 connecting the center 601 of the substrate 60 with the center 401 of the process gas supply nozzle 40.
摘要翻译：要解决的问题：提供一种在维护等期间代替炉内部构件的基板处理装置，从而抑制金属污染水平变高。解决方案：基板处理装置包括：处理室，其存储用于保持多个基板60，同时在纵向方向上在基板60之间形成空间，并处理基板60; 处理气体供给部，其向处理室供给处理气体; 以及与处理气体供给部连接并将处理气体供给到处理室的工艺气体供给喷嘴40。在工艺气体供给喷嘴40中，在连接基板60的中心601与处理气体供给喷嘴40的中心401的线100的每一侧设置至少一个气体供给孔52。

5. 发明专利

JP2012069635A Deposition device, wafer holder and deposition method 审中-公开
标题翻译：沉积装置，保持架和沉积方法
公开(公告)号：JP2012069635A
公开(公告)日：2012-04-05
申请号：JP2010211878
申请日：2010-09-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HARA DAISUKE , NIIMURA NORIHIRO , MUROBAYASHI MASASUE , HIROCHI SHIYU
IPC分类号： H01L21/205
CPC分类号： C23C16/4583 , C23C16/4585 , C30B25/08 , C30B25/12 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To solve such a problem of a batch type vertical SiC deposition device that it is difficult to enhance throughput of a deposition process.SOLUTION: A wafer holder is used in a deposition device having a boat (30) which holds a plurality of wafers (14), and a reaction gas supply section which supplies reaction gas from the side surface of the plurality of wafers held by the boat. The wafer holder comprises a wafer holder upper portion (100) mounted so as to cover the upper surface of the wafer when it is held by the boat, and having a gas inflow inhibition part provided so as to surround the periphery of the wafer so that inflow of the reaction gas to the backside of the wafer is inhibited.
摘要翻译：要解决的问题为了解决难以提高沉积工艺的生产量的批量型垂直SiC沉积装置的问题。解决方案：在具有保持多个晶片（14）的船（30）的沉积装置中使用晶片保持器，以及从多个晶片的侧表面提供反应气体的反应气体供应部乘船。晶片保持器包括晶片保持器上部（100），其安装成当其被船保持时覆盖晶片的上表面，并且具有设置成围绕晶片的周边设置的气体流入禁止部分，使得反应气体流入晶片的背面被抑制。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012019081A Substrate treatment apparatus, semiconductor device manufacturing method and substrate manufacturing method 审中-公开
标题翻译：基板处理装置，半导体装置制造方法和基板制造方法
公开(公告)号：JP2012019081A
公开(公告)日：2012-01-26
申请号：JP2010155790
申请日：2010-07-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROCHI SHIYU , TANAKA AKINORI , SATO AKIHIRO , FUKUDA MASANAO , ITO TAKESHI , MORIMITSU KAZUHIRO
IPC分类号： H01L21/205 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus, a semiconductor device manufacturing method and a substrate manufacturing method which can inhibit deterioration of a heating target body.SOLUTION: A substrate treatment apparatus 40 comprises a treatment container 42 capable of being kept in a vacuum state inside for treating a wafer 14, a to-be-heated body 60 provided inside the treatment container 42 so as to surround at least a placing region of the wafer 14, a heat insulation body 66 provided between an inside wall of the treatment container 42 and the to-be-heated body 60 so as to surround the to-be-heated body 60, a first gas supply nozzle 70 and a second gas supply nozzle 80 for supplying the to-be-heated body 60 with gases inside, magnetic coils 62 provided outside the treatment container 42 for inductively heating the to-be-heated body 60 and a protection wall 94 for inhibiting contact of the gases supplied from the first gas supply nozzle 70 and the second gas supply nozzle 80 with the to-be-heated body 60.
摘要翻译：解决的问题：提供一种能够抑制加热对象体的劣化的基板处理装置，半导体装置的制造方法以及基板的制造方法。解决方案：基板处理装置40包括能够保持在内部的真空状态的处理容器42，用于处理晶片14，设置在处理容器42内部的待加热体60至少包围晶片14的放置区域，设置在处理容器42的内壁和被加热体60之间以围绕被加热体60的隔热体66，第一气体供给喷嘴 70和用于向被加热体60供应气体的第二气体供给喷嘴80，设置在处理容器42外部的电磁线圈62，用于感应加热被加热体60和用于抑制接触的保护壁94 从第一气体供给喷嘴70和第二气体供给喷嘴80供给的被加热体60的气体。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2013201292A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2013201292A
公开(公告)日：2013-10-03
申请号：JP2012068687
申请日：2012-03-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROCHI SHIYU , NISHIDO SHUHEI , YAMAGUCHI TENWA , SHIRAKO KENJI
IPC分类号： H01L21/324 , C23C16/56 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a technology which shortens the heat-up time taken for increasing a temperature in a processing chamber to a processing temperature without increasing power supplied from a power source for heating.SOLUTION: A substrate processing apparatus includes a control part, and the control part performs control described as follows. The control part performs control so that the oxygen concentration in a processing chamber 34 is measured in a state that a boat 20 holding a wafer 12 is carried in the processing chamber 34 and an inactive gas is supplied to the processing chamber 34. Next, the control part performs control so that a temperature in the processing chamber 34 is risen so that the temperature in the processing chamber becomes a processing temperature in a state that a pressure in the processing chamber 34 is controlled to be at a first pressure lower than the atmospheric pressure. Then, the control part performs control so that the wafer 12 is subject to thermal treatment in a state that the temperature in the processing chamber 34 is controlled to be at the processing temperature and the pressure in the processing chamber 34 is controlled to be at a second pressure higher than the first pressure.
摘要翻译：要解决的问题：提供一种技术，其将加工室内的温度上升所需的加热时间缩短到加工温度，而不增加从用于加热的电源提供的功率。解决方案：基板处理装置包括控制部分，控制部进行如下的控制。控制部进行控制，使得处理室34中的氧浓度在保持晶片12的舟皿20被携带在处理室34中并且将惰性气体供应到处理室34的状态下测量。接下来，控制部进行控制，使得处理室34内的温度上升，使处理室内的温度成为处理室34内的压力控制在低于大气压的第一压力的状态下的处理温度压力。然后，控制部进行控制，使得晶片12在处理室34内的温度被控制在处理温度的状态下进行热处理，并且处理室34中的压力被控制在第二压力高于第一压力。

8. 发明专利

JP2012178492A Substrate processing device, gas nozzle, and method of manufacturing substrate or semiconductor device 审中-公开
标题翻译：基板加工装置，气体喷嘴及制造基板或半导体器件的方法
公开(公告)号：JP2012178492A
公开(公告)日：2012-09-13
申请号：JP2011041217
申请日：2011-02-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROCHI SHIYU , SASAKI TAKASHI , HARA DAISUKE
IPC分类号： H01L21/205 , C23C16/455 , C30B25/14 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To evenly perform film formation on each substrate by making the flow of a reaction gas supplied from each gas supply port approximately uniform.SOLUTION: In each of a plurality of gas supply nozzles 60, 70, current plates 69, 73, respectively, are provided on the side of a first gas exhaust port 90 of the gas supply ports 68, 72, so as to extend in a direction in which a reaction gas from the gas supply ports 68, 72 is supplied. With this configuration, it is possible to suppress the reaction gas ejected (supplied) from the gas supply ports 68, 72 from directly flowing toward the first gas exhaust port 90 and to make the flow of the reaction gas toward the wafers 14 approximately uniform, thereby making it possible to evenly perform film formation on each of the wafers 14.
摘要翻译：要解决的问题：通过使从每个气体供给口供应的反应气体的流动大致均匀地在每个基板上均匀地进行成膜。解决方案：在多个气体供给喷嘴60,70中的每一个中，电流板69,73分别设置在气体供给口68,72的第一排气口90侧，以便在从供气口68,72供给反应气体的方向上延伸。由此，能够抑制从气体供给口68,77喷射（供给）的反应气体直接朝向第一排气口90流动，使反应气体朝向晶片14的流动大致均匀，从而可以在每个晶片14上均匀地进行成膜。版权所有：（C）2012，JPO＆INPIT

9. 发明专利

JP2012178490A Substrate processing device, gas nozzle, and method of manufacturing substrate or semiconductor device 审中-公开
标题翻译：基板加工装置，气体喷嘴及制造基板或半导体器件的方法
公开(公告)号：JP2012178490A
公开(公告)日：2012-09-13
申请号：JP2011041213
申请日：2011-02-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROCHI SHIYU , HARA DAISUKE , NISHIDO SHUHEI , SASAKI TAKASHI
IPC分类号： H01L21/205 , C01B31/36 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To enhance yield without blocking a gas supply port of a gas nozzle.SOLUTION: A substrate processing device comprises: a reaction pipe 42 (manifold 36) configured to process (thermally process) a plurality of wafers 14 stacked on one another; a heating body 48 configured to heat an inside of the reaction pipe 42; a first gas supply nozzle 60 provided in the reaction pipe 42 and extending in a direction in which the wafers 14 are stacked; a plurality of first gas supply ports 68 arranged side by side from a base end portion 60a of the first gas supply nozzle 60 toward a tip portion 60b and configured to supply a Si atom-containing gas (film formation gas) and a Cl atom-containing gas (etching gas) to each of the wafers 14; and a current plate 61 provided at the tip portion 60b of the first gas supply nozzle 60 and extending toward a direction in which the gases are supplied. With this configuration, it is possible to suppress decrease in concentration of the etching gas in the periphery of the first gas supply port 68 in the top stage and to prevent the first gas supply port 68 from being blocked, thereby enhancing yield.
摘要翻译：要解决的问题：提高产量而不阻塞气体喷嘴的气体供给口。解决方案：基板处理装置包括：反应管42（歧管36），被配置为处理（热处理）堆叠在一起的多个晶片14; 构造为加热反应管42内部的加热体48; 设置在反应管42中并沿晶片14堆叠的方向延伸的第一气体供给喷嘴60; 从第一气体供给喷嘴60的基端部60a朝向前端部60b并列配置的多个第一气体供给口68，其构成为供给含有Si原子的气体（成膜气体）和Cl原子 - 含有气体（蚀刻气体）到每个晶片14; 以及设置在第一气体供给喷嘴60的前端部60b并朝向供给气体的方向延伸的电流板61。由此，能够抑制顶级的第一气体供给口68的周围的蚀刻气体的浓度的降低，防止第一气体供给口68被阻塞，从而提高成品率。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012004381A Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2012004381A
公开(公告)日：2012-01-05
申请号：JP2010138524
申请日：2010-06-17
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI , HIROCHI SHIYU , TAKANO SATOSHI , HORII RITSUO , KAWAHATA MAKOTO
IPC分类号： H01L21/677 , H01L21/027
CPC分类号： H01L21/67196 , H01J37/32743 , H01J37/32788 , H01J37/32889 , H01J37/32899 , H01L21/67201
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which receives less amount of a radiation heat influence from a substrate having a higher temperature on a substrate having a lower temperature when plural substrates are cooled in one cooling chamber thereby suppressing reduction in cooling rate of the substrate having the lower temperature.SOLUTION: The substrate processing apparatus comprises a load lock chamber for housing substrates individually in multiple stages, a first transport mechanism having a fist conveyance arm provided with an end effector for transporting a substrate from one side of the load lock chamber to the inside or to the outside of the load lock chamber, a second transport mechanism having a second conveyance arm provided with an end effector for transporting a substrate from another side of the load lock chamber to the inside or to the outside of the load lock chamber, barrier plates each provided between and away from the substrates supported by substrate support parts disposed in the load lock chamber for blocking heat of the substrate from each other, and a barrier plate accessory provided between the substrate support part and the barrier plate and in a space other than a standby space of the end effector for approaching a substrate housed above the barrier plate to absorb radiation heat from the substrate.
摘要翻译：要解决的问题：提供一种在一个冷却室中冷却多个基板时，在具有较低温度的基板上从较高温度的基板接收较少量的辐射热影响的基板处理设备，从而抑制具有较低温度的基板的冷却速度。解决方案：基板处理装置包括用于分别以多级容纳基板的负载锁定室，第一输送机构，其具有设置有端部执行器的第一输送臂，用于将基板从负载锁定室的一侧输送到在负载锁定室的内部或外部，具有第二输送臂的第二输送机构，所述第二输送臂设置有端部执行器，用于将基板从负载锁定室的另一侧输送到负载锁定室的内部或外部，每个挡板设置在设置在装载锁定室中的基板支撑部分支撑的基板之间和远离基板之间，用于阻挡基板的热量;以及阻挡板附件，设置在基板支撑部分和阻挡板之间并且在空间中除了端部执行器的备用空间之外，用于接近容纳在阻挡板上方的衬底以吸收辐射热fr 底物。版权所有（C）2012，JPO＆INPIT

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