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1. 发明专利

JP2005276941A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2005276941A
公开(公告)日：2005-10-06
申请号：JP2004085220
申请日：2004-03-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI
IPC分类号： H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To improve maintenance workability of an opening/closing device, reduce burden of an operator, shorten a working time, and improve working efficiency, in a substrate processing apparatus.
SOLUTION: In the substrate processing apparatus wherein a substrate is shipped in/out by a substrate housing container with an enclosed structure; an enclosure 20 is divided into a container transfer space 2 and a substrate transfer space by a partition 1, a container receiving part 32 is provided in the container transfer space and a container cover opening/closing part is provided in the substrate transfer space, and then the container receiving part and the container cover opening/closing part are integrally rotatable.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提高打开/关闭装置的维护可操作性，减少了基板处理装置中的操作者的负担，缩短了工作时间，提高了工作效率。解决方案：在衬底处理设备中，其中衬底通过具有封闭结构的衬底容纳容器进出/出; 外壳20通过隔板1分成容器传送空间2和基板传送空间，容器接收部32设置在容器传送空间中，容器盖开闭部设置在基板搬送空间内，那么容器接收部分和容器盖打开/关闭部分是可整体旋转的。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005243768A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2005243768A
公开(公告)日：2005-09-08
申请号：JP2004049262
申请日：2004-02-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： FUKUDA MASANAO , MATSUDA SATOYUKI , TANAKA AKINORI , OGAWA HIROYUKI
IPC分类号： H01L21/285 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of removing a native oxide film grown on the surface of a wafer.
SOLUTION: The substrate processing device is provided with a supply-side pod opener 20, with which a batch type CVD device 10 opens and closes the pod storing the wafer to be processed; a first transfer room 42, in which a first wafer transfer device 45 takes out a wafer to be processed, and transfers it to a removal chamber 92 with an oxide film removing device 90; a second transfer room 52 contiguous to a waiting room 63, where a boat 87 is waiting for carrying-in and carrying-out the wafer to/from the processing chamber; an outlet-side pod opener 30 contiguous to the second transfer room 52, which opens and closes the pod of a processed wafer; and a buffer chamber 132 interposed in between the first transfer room 42 and the second transfer room 52. After the supplying of the wafer to be processed to the removal chamber 92 using the first wafer transfer equipment 45 and removing an oxide film, the wafer is carried in to the waiting room 63 with the second wafer transfer equipment 55 via the buffer chamber 132. The processed wafer in the waiting room 63 is carried out with the second wafer transfer equipment 55 to the outlet-side pod opener 30.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供能够除去在晶片表面生长的自然氧化膜的基板处理装置。解决方案：基板处理装置设置有供给侧开启装置20，间歇型CVD装置10通过该供应侧开启装置打开和关闭储存待处理晶片的容器; 第一转印室42，其中第一晶片转移装置45取出待处理的晶片，并用氧化膜去除装置90将其转移到去除室92; 邻近等候室63的第二转移室52，其中船87正在等待将晶片搬入和移出处理室; 连接到第二转移室52的出口侧开罐器30，其打开和关闭处理过的晶片的容器; 以及插入在第一转移室42和第二转移室52之间的缓冲室132.在使用第一晶片转移设备45将待处理的晶片供应到去除室92并除去氧化膜之后，晶片是通过缓冲室132与第二晶片转移设备55一起携带到等候室63中。等待室63中的处理晶片与第二晶片转移设备55一起被执行到出口侧开启器30。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2013197475A Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device 审中-公开
标题翻译：基板加工装置，基板加工方法及制造半导体装置的方法
公开(公告)号：JP2013197475A
公开(公告)日：2013-09-30
申请号：JP2012065419
申请日：2012-03-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI , YASUI TAKESHI , MATSUURA NAOYA
IPC分类号： H01L21/02 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a substrate processing method, and a method of manufacturing a semiconductor device, capable of shortening transportation time for transporting a substrate to be processed, for improved throughput.SOLUTION: A substrate processing apparatus 10 includes a vacuum transportation chamber 103 which forms a transportation space 104, a vacuum transportation robot 112 for transporting a substrate 200 to be processed, a plurality of process chambers 201a and the like, an auxiliary transportation chamber 122 and the like, and a controller 281. The controller 281 controls the vacuum transportation robot 112 so that, when the substrate 200 to be processed is transported between one of the plurality of process chambers 201a and the like and the auxiliary transportation chamber 122 and the like, the substrate 200 to be processed does not pass other two or more process chambers where the substrate 200 to be processed is transported, among the plurality of process chambers 201a and the like.
摘要翻译：要解决的问题：提供能够缩短用于输送待处理基板的输送时间的基板处理装置，基板处理方法和半导体装置的制造方法，以提高生产量。解决方案：基板处理装置10 包括形成运送空间104的真空输送室103，输送被处理基板200的真空输送机器人112，多个处理室201a等，辅助输送室122等，以及控制器281 控制器281控制真空输送机器人112，使得当要处理的基板200在多个处理室201a中的一个和辅助输送室122等之间传送时，要处理的基板200 不经过其他两个或更多个处理室，其中待处理的衬底200被输送在多个处理室201a等上。

4. 发明专利

JP2007116089A Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2007116089A
公开(公告)日：2007-05-10
申请号：JP2006181337
申请日：2006-06-30
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NAKADA TAKAYUKI , NAKADA SHIGEO , OGAWA HIROYUKI , SHIBATA TAKESATO , WATAHASHI YOSHISATO
IPC分类号： H01L21/31 , H01L21/67
摘要： PROBLEM TO BE SOLVED: To prevent the generation of deposit in a lower area of a standby chamber. SOLUTION: A heat treatment apparatus 10 is provided with a treatment chamber 23 for treating a wafer 1, a boat 21 for holding the wafer 1 and carrying the wafer 1 into the treatment chamber 23, the standby chamber 16 for waiting for the carrying of the boat 21 into the treatment chamber 23, and clean units 40A, 40B for supplying clean nitrogen gas 30 to the standby chamber 16. A buffer duct 51 and a deposit preventing duct 54 are arranged in the clean unit 40B arranged on a position opposed to the boat 21, and a slit plate 57 and a fin 59 are arranged on the blowout port 56 of the deposit preventing duct 54. The nitrogen gas 30 from the buffer duct 51 is allowed to flow from the blowout port 56 of the deposit preventing duct 54 into lower space of a seal cap 20 in the stand by chamber 16, and atmosphere in the lower space is carried away to prevent the generation of deposit. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止在备用室的下部区域中产生沉积物。解决方案：热处理设备10设置有用于处理晶片1的处理室23，用于保持晶片1并将晶片1携带到处理室23中的船21，待机室16等待将船21携带到处理室23中，以及用于向备用室16供给清洁氮气30的清洁单元40A，40B。缓冲管道51和防沉积管道54布置在布置在位置上的清洁单元40B中相对于船21，并且在防沉降管道54的吹出口56上设有狭缝板57和翅片59.来自缓冲管道51的氮气30被允许从沉积物的吹出口56流出防止管道54进入支架室16中的密封盖20的下部空间，并且下部空间中的气氛被带走以防止沉积物的产生。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007027379A Substrate processing equipment 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2007027379A
公开(公告)日：2007-02-01
申请号：JP2005206869
申请日：2005-07-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI , NAKADA TAKAYUKI , NAKADA SHIGEO , SHIBATA TAKESATO
IPC分类号： H01L21/31 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To prevent a rise in temperatures of a motor installation chamber of a boat elevator.
SOLUTION: A thermal processing equipment 10 comprises: a processing chamber 23 for holding a wafer 1 by a boat 21 for processing; a waiting chamber 16 in which the boat 21 waits for transferring into the processing chamber 23; a boat elevator 19 for lifting up and down the boat 21 between the wait chamber 16 and the processing chamber 23; and a clean unit 40 for supplying a clean nitrogen gas 30 to the wait chamber 16. An inlet port 54 of a stuffiness preventing duct 53 is connected to a motor installation chamber 50 installed with the motor 19b of the boat elevator 19, and an outlet port 55 is connected to the upstream side of the ventilator 42 of the clean unit 40. The nitrogen gas 30 is forced to circulate in the motor installation chamber 50, thereby preventing an occurrence of a rise in temperatures of the motor installation chamber 50.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止船只升降机的电动机安装室的温度上升。解决方案：热处理设备10包括：处理室23，用于通过船21保持晶片1用于处理; 等待室16，其中船21等待转移到处理室23中; 用于在等待室16和处理室23之间升降船21的船只升降机19; 以及用于向等候室16供给清洁的氮气30的清洁单元40.防止排气管道53的入口端口54连接到安装有电梯升降机19的电动机19b的电动机安装室50和出口端口55连接到清洁单元40的呼吸机42的上游侧。氮气30被迫在马达安装室50中循环，从而防止马达安装室50的温度升高。 P>版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2005106118A Substrate processing device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2005106118A
公开(公告)日：2005-04-21
申请号：JP2003337777
申请日：2003-09-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI , NOTO KOICHI , AKUTSU NORIO
IPC分类号： F16K3/18 , F16K51/02 , H01L21/22 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a large-diameter substrate processing device in a simple structure having a small-sized gate valve.
SOLUTION: In the substrate processing device having the gate valve 24 blocking an opening 101, the gate valve has a valve unit being movable with a first moving means 127. The valve unit comprises a valve body 108 capable of blocking the opening, and a member 106 capable of approaching and separating in a direction different from the first moving means against the valve body, and a second moving means 114 capable of approaching and separating the valve body to the member and opening and closing the opening is located at a center portion.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有小型闸阀的简单结构的大直径基板处理装置。解决方案：在具有阻挡开口101的闸阀24的基板处理装置中，闸阀具有可由第一移动装置127移动的阀单元。阀单元包括能够阻挡开口的阀体108，以及能够在与第一移动装置不同的方向上接近和分离的构件106抵靠阀体，并且能够使阀体接近和分离到构件并打开和关闭开口的第二移动装置114位于中心部分。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004296856A Semiconductor manufacturing system 审中-公开
公开(公告)号：JP2004296856A
公开(公告)日：2004-10-21
申请号：JP2003088253
申请日：2003-03-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI , NAKAGAWA NAOYUKI
IPC分类号： B65G49/07 , H01L21/22 , H01L21/324 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To improve throughput by improving maintenance workability and reducing working hours for a semiconductor manufacturing system.
SOLUTION: With respect to the semiconductor manufacturing system by which substrates are carried in and out by hermetically-closed substrate storing cases, the inside of its housing is divided by a partition 1 into a case carrying space 2 and a substrate carrying space. The side of the case carrying space 2 of the partition 1 is provided with a case receiving part 32 and the side of the substrate carrying space of the partition 1 is provided with a case cover opening/closing part. The case receiving part 32 can be detached from the partition 1 and can be moved parallel to the partition 1.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2013197232A Substrate processing device, substrate processing method, method for manufacturing semiconductor device, program for executing the method, and recording medium storing program 审中-公开
标题翻译：基板处理装置，基板处理方法，制造半导体器件的方法，执行方法的程序和记录中间存储程序
公开(公告)号：JP2013197232A
公开(公告)日：2013-09-30
申请号：JP2012061471
申请日：2012-03-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YASUI TAKESHI , MATSUURA NAOYA , FUKUDA MITSURU , OGAWA HIROYUKI
IPC分类号： H01L21/677
CPC分类号： H01L21/67718 , H01L21/67011 , H01L21/67098 , H01L21/67115 , H01L21/67126 , H01L21/67703 , H01L21/67739 , H01L21/67745 , H01L21/68785
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device, a substrate processing method, a method for manufacturing a semiconductor device, a program for executing the method, and a recording medium storing the program, capable of improving device manufacturing throughput.SOLUTION: A substrate processing device comprises: a substrate to be processed; a transportation chamber in which the substrate to be transported is provided in a vacuum atmosphere; a substrate transportation unit which transports the substrate provided in the transportation chamber; at least two processing chambers provided adjacent to the transportation chamber and for processing the substrate; gate valves respectively provided between the transportation chamber and the processing chambers; and a control unit which controls the substrate transportation unit and the gate valves. The control unit controls opening and closing of the at least two gate valves during substrate transportation by the substrate transportation unit.
摘要翻译：要解决的问题：提供一种基板处理装置，基板处理方法，半导体装置的制造方法，执行该方法的程序以及存储程序的记录介质，能够提高装置的制造能力。解决方案：A 基板处理装置包括：待加工基板; 输送室，其中待运输的基板设置在真空气氛中; 基板输送单元，其输送设置在所述输送室内的基板; 至少两个处理室，设置在所述传送室附近并用于处理所述衬底; 分别设置在输送室和处理室之间的闸阀; 以及控制单元，其控制基板输送单元和闸阀。控制单元在基板输送单元的基板输送期间控制至少两个闸阀的打开和关闭。

9. 发明专利

JP2005079250A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2005079250A
公开(公告)日：2005-03-24
申请号：JP2003306187
申请日：2003-08-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA HIROYUKI
IPC分类号： B65G49/00 , H01L21/22 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent such problems as deposition of a natural oxide film on a wafer, attachment of particles to the wafer, contamination of the inner space of a housing, increase in oxygen density, etc. when opening a pod.
SOLUTION: In a batch processing type CVD system which handles the pod 10 whose door 10a is removably attached to a wafer carry-in/out port 10a, a pod opener 20 which attaches/detaches the door 10a is installed in a port for carrying in/out a wafer 9 into or out of the pod 10. An air feeding pipe 65 equipped with a nozzle 66 for jetting out nitrogen gas 64 is inserted into a chamber 60 of the pod opener 20. The nozzle 66 blows out the nitrogen gas 64 into a wafer storage chamber 10c at a tilt angle Θ ranging between 20° and 30° from one side of the wafer carry-in/out port 10b toward the opposite side. The flow of the nitrogen gas 64 up to the opposite side is reflected on the back side of the wafer storage chamber 10c, and returned to the wafer carry-in/out port 10b.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了防止在将晶片上沉积自然氧化膜，将颗粒附着到晶片上时，在打开容器时容纳壳体的内部空间的污染，氧气密度等的增加等问题。解决方案：在处理其门10a可移除地附接到晶片进/出端口10a的荚10的批处理型CVD系统中，将门10a附接/分离的荚果开启器20安装在端口用于将晶片9输入/输出到容器10中。配备有用于喷射氮气64的喷嘴66的空气供给管65被插入到开启装置20的室60中。喷嘴66吹出氮气64从晶片进/出端口10b的一侧向相对侧以20°至30°的倾斜角θ进入晶片存储室10c。氮气64向相反侧的流动在晶片储存室10c的背面被反射，并返回到晶片输入/输出端口10b。版权所有（C）2005，JPO＆NCIPI

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