专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011054680A Method and device for manufacturing semiconductor device 审中-公开
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：JP2011054680A
公开(公告)日：2011-03-17
申请号：JP2009200667
申请日：2009-08-31
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： WADA YUICHI , ASHIHARA YOJI , HIYAMA MAKOTO , TANABE JUNICHI , TAIRA YUKI , KITAGAWA NAOKO , ONO MASANORI
IPC分类号： H01L21/316 , C23C16/455 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To remove impurities, to reform a film further, and to stabilize the film when depositing the film by a CVD method or the like.
SOLUTION: In a substrate processing method, processing is performed so as to repeat first processing including a step of supporting a substrate at such a temperature that a first raw material and silicon components included in the substrate are not bonded and a first substrate processing step of supplying a material including at least the first raw material to a processing chamber, exciting it and forming the deposit layer of a desired thickness in an element isolation region, and second processing including a second substrate processing step of supplying a material not including the first raw material but including a second raw material to the processing chamber, exciting it, and making the deposit layer react, evaporating it or reforming it.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了去除杂质，进一步改性膜，并且通过CVD法等沉积膜时使膜稳定。解决方案：在基板处理方法中，进行处理以重复第一处理，包括在基板中包含的第一原材料和硅成分未接合的温度下支撑基板的步骤，以及第一基板将至少包含第一原材料的材料供应到处理室，激励它并在元件隔离区域中形成所需厚度的沉积层的第二处理步骤，第二处理步骤包括：第二基板处理步骤，第一原材料，但包括第二原料加工到处理室，激发它，并使沉积层反应，蒸发或重整。版权所有（C）2011，JPO＆INPIT

IPRDB

热门服务

关于我们

友情链接

联系方式