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1. 发明专利

JP2011054680A Method and device for manufacturing semiconductor device 审中-公开
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：JP2011054680A
公开(公告)日：2011-03-17
申请号：JP2009200667
申请日：2009-08-31
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： WADA YUICHI , ASHIHARA YOJI , HIYAMA MAKOTO , TANABE JUNICHI , TAIRA YUKI , KITAGAWA NAOKO , ONO MASANORI
IPC分类号： H01L21/316 , C23C16/455 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To remove impurities, to reform a film further, and to stabilize the film when depositing the film by a CVD method or the like.
SOLUTION: In a substrate processing method, processing is performed so as to repeat first processing including a step of supporting a substrate at such a temperature that a first raw material and silicon components included in the substrate are not bonded and a first substrate processing step of supplying a material including at least the first raw material to a processing chamber, exciting it and forming the deposit layer of a desired thickness in an element isolation region, and second processing including a second substrate processing step of supplying a material not including the first raw material but including a second raw material to the processing chamber, exciting it, and making the deposit layer react, evaporating it or reforming it.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了去除杂质，进一步改性膜，并且通过CVD法等沉积膜时使膜稳定。解决方案：在基板处理方法中，进行处理以重复第一处理，包括在基板中包含的第一原材料和硅成分未接合的温度下支撑基板的步骤，以及第一基板将至少包含第一原材料的材料供应到处理室，激励它并在元件隔离区域中形成所需厚度的沉积层的第二处理步骤，第二处理步骤包括：第二基板处理步骤，第一原材料，但包括第二原料加工到处理室，激发它，并使沉积层反应，蒸发或重整。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2005142579A Method of fabricating semiconductor device and apparatus for fabricating semiconductor 审中-公开
标题翻译：制造半导体器件的方法和制造半导体器件的方法
公开(公告)号：JP2005142579A
公开(公告)日：2005-06-02
申请号：JP2004358484
申请日：2004-12-10
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , KYODA MASAYUKI , KITAGAWA NAOKO , ITAYA HIDEJI , NAKAMURE MICHIHIDE
IPC分类号： C23C16/455 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device and an apparatus for fabricating a semiconductor that enable the formation of a uniform film on a substrate.
SOLUTION: The method of fabricating a semiconductor device comprises: a substrate carry-in step of carrying a substrate into a reaction chamber; a substrate-temperature raising step of raising the temperature of the substrate in said reaction chamber; a substrate-film formation step of supplying a gas for forming a film into said reaction chamber and forming a thin film on said substrate; and a substrate carry-out step of carrying the substrate after forming the thin film out of said reaction chamber, wherein said reaction chamber is provided with at least one supply port and a plurality of exhaust ports of gas and at least in said substrate-temperature raising step, a predetermined gas is exhausted from all of said plurality of exhaust ports while supplying said predetermined gas from said at least one supply port of gas.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造半导体器件的方法以及能够在衬底上形成均匀的膜的半导体制造装置。解决方案：制造半导体器件的方法包括：将衬底携带到反应室中的衬底搬运步骤; 提高所述反应室中的基板的温度的基板升温步骤; 将形成膜的气体供给到所述反应室中并在所述基板上形成薄膜的基板成膜工序; 以及在从所述反应室形成所述薄膜之后承载所述基板的基板搬出步骤，其中所述反应室设置有至少一个供给口和多个排气口，并且至少在所述基板温度在从所述至少一个气体供给口供给所述预定气体的同时，从所述多个排气口全部排出预定的气体。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005259932A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2005259932A
公开(公告)日：2005-09-22
申请号：JP2004068555
申请日：2004-03-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , KITAGAWA NAOKO
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can realize reduction in down-time of apparatus, reduction in running cost, and long-life operation by preventing adhesion of non-reacted gas and byproduct in the course of the piping.
SOLUTION: The exhaust gas exhausted from a reaction chamber 2 is guided to an exhaust pump 4 from the piping 3 and the exhaust gas exhausted to an exhaust guiding pipe 5 from the exhaust pump 4 is liquefied and is forcibly sent to a trap tank 6. Within the trap tank 6, a decomposing solution decomposes the liquefied substance of the exhaust gas to generate a solid substance. Accordingly, as the solid substance sinks in the decomposing solution, the liquefied substance of the exhaust gas does not leak into an exhaust gas exhausting pipe 7 after it is volatiled. Since the trap tank 6 is provided with a region in which condensation of non-reacted raw material and byproduct in the exhaust gas occurs effectively as explained above, closing by condensed substance in the exhausting side of the exhausting pump 3 can be prevented by eliminating condensation of non-reacted raw material and byproduct of the exhaust gas in the piping other than the trap tank 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决问题的方案：提供一种半导体制造装置，其能够通过防止未反应的气体和副产物的粘附而实现设备的停机时间的减少，运行成本的降低和长寿命的操作管道。解决方案：从反应室2排出的废气从管道3被引导到排气泵4，并且从排气泵4排出到排气导管5的废气被液化，并被强制送到捕集器在捕集罐6内，分解溶液分解废气的液化物质以产生固体物质。因此，当固体物质沉入分解溶液中时，废气的液化物质在其被挥发后不会泄漏到废气排放管7中。由于捕集罐6设置有如上所述有效地发生未反应的原料与废气中的副产物的冷凝的区域，因此可以通过除去冷凝物来防止在排气泵3的排气侧的冷凝物质的关闭未回收的原料以及除了捕集罐6以外的管道中的废气副产物。（C）2005年，JPO＆NCIPI

4. 发明专利

JP2012204692A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2012204692A
公开(公告)日：2012-10-22
申请号：JP2011068933
申请日：2011-03-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ASHIHARA YOJI , KITAGAWA NAOKO , TAIRA YUKI , TANABE JUNICHI
IPC分类号： H01L21/316 , C23C16/42 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an optical thin film formation technology which can inhibit large volume shrinkage due to desorption of an organic component in a film and inhibit structural disorder such as cracks.SOLUTION: A semiconductor device manufacturing method comprises a step of conveying a substrate into a processing chamber, a step of supplying an organic silicon-based gas to the processing chamber and irradiating the organic silicon-based gas with ultraviolet light to form a silicon oxide film, and a step of supplying an inorganic silicon-based gas to the processing chamber and irradiating the inorganic silicon-based gas with ultraviolet light to form a silicon oxide film.

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