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1. 发明专利

JP2010192910A Substrate processing apparatus and method 有权
标题翻译：基板加工装置和方法
公开(公告)号：JP2010192910A
公开(公告)日：2010-09-02
申请号：JP2010070991
申请日：2010-03-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYASHITA TOMOYASU , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/505 , H01L21/3065 , H05H1/46
CPC分类号： C23C16/452 , C23C16/345 , C23C16/45546 , C23C16/4584 , H01J37/32082 , H01J37/321 , H01J37/32559 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and method, in which deterioration of discharging electrodes for exciting a processing gas into plasma is prevented or suppressed, thereby service life of the discharging electrodes are improved. SOLUTION: The substrate processing apparatus has a heating means arranged so as to externally surround a reaction tube 203 for containing a substrate; a pair of electrodes 269 for exciting the processing gas into plasma, formed inside the heating means; a coupling coil 311 connected across a pair of the electrode; a protective container 275 for air-tightly containing the pair of electrodes 269 and the coupling coil 311 and having an inert gas environment set in its inside; and an induction coil 312 arranged outside the protective container 275, inductively coupled to the coupling coil 311, and to which high-frequency electric power is applied. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了提供一种基板处理装置和方法，其中防止或抑制将处理气体激发到等离子体中的放电电极的劣化，从而提高了放电电极的使用寿命。解决方案：基板处理装置具有布置成外部包围用于容纳基板的反应管203的加热装置; 一对电极269，用于将处理气体激发成等离子体，形成在加热装置的内部; 连接在一对电极上的耦合线圈311; 用于气密地包含一对电极269和耦合线圈311并且在其内部设置有惰性气体环境的保护容器275; 以及设置在保护容器275外部的感应线圈312，感应耦合到耦合线圈311，并且施加高频电力。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2012049342A Apparatus and method of processing substrate 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：JP2012049342A
公开(公告)日：2012-03-08
申请号：JP2010190339
申请日：2010-08-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYASHITA TOMOYASU , SUZAKI KENICHI
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C23C16/4408 , C23C16/4411 , C23C16/54 , H01L21/67109 , H01L21/67253 , H01L21/67757
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method of processing a substrate in which deposition of reaction products in the processing chamber and the exhaust line can be minimized, and corrosion due to hydrogen chloride gas can be inhibited.SOLUTION: The method of processing a substrate includes a first step for forming a film on a substrate in the processing chamber 201, and a second step for taking atmosphere into the processing chamber 201 from the outside thereof following to the first step, generating at least hydrogen chloride gas by causing reaction between a matter adhering to the inside of the processing chamber 201 or the inside of an exhaust line connected thereto and moisture contained in the atmosphere, and exhausting hydrogen chloride gas from the exhaust line. The second step is sustained until the concentration of hydrogen chloride gas in the processing chamber 201 goes below a set concentration.
摘要翻译：要解决的问题：提供一种处理基板的装置和方法，其中处理室和排气管线中的反应产物的沉积可以最小化，并且可以抑制由于氯化氢气体引起的腐蚀。解决方案：处理基板的方法包括在处理室201中的基板上形成膜的第一步骤和在第一步骤之后从其外部将气体吸入处理室201的第二步骤，通过引起附着于处理室201内部的物质或与其连接的排气管路的内部和包含在大气中的水分之间的反应，并从排气管排出氯化氢气体，至少产生氯化氢气体。第二步骤是持续到处理室201内的氯化氢气体的浓度低于设定浓度。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012199402A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2012199402A
公开(公告)日：2012-10-18
申请号：JP2011062838
申请日：2011-03-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYASHITA TOMOYASU , ISHII AKINORI , HIRANO MAKOTO , TANIUCHI MASAMICHI
IPC分类号： H01L21/31 , C23C16/46 , H01L21/324 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus in which a high frequency power is applied to a plurality of susceptors loading substrates, respectively, and the substrates are processed by heating the plurality of susceptors by induction heating, and which can ensure a soaking region in a lamination direction longer.SOLUTION: A substrate processing apparatus comprises: a susceptor holding member 217 holding a plurality of susceptors 150 in a lamination manner; a container 203 housing the plurality of susceptors; an induction coil 207 provided outside of the container; and a heat insulation member 360 provided outside of the container 203. The container 203 includes a closed part 270 on an upper side and a sidewall part 272. The heat insulation material 360 covers the closed part 270 of the container 203 and a region from the closed part 270 to a part of the sidewall part 272 to extend to between the sidewall part 272 and the induction coil 207.
摘要翻译：要解决的问题：提供一种基板处理装置，其中分别对多个基座装载基板施加高频功率，并且通过感应加热来加热多个基座来处理基板，并且其可以确保层压方向上的均热区域更长。解决方案：基板处理装置包括：基座保持部件217，以层叠的方式保持多个基座150; 容纳多个基座的容器203; 设置在容器外部的感应线圈207; 以及设置在容器203的外侧的隔热构件360.容器203包括上侧的封闭部270和侧壁部272.绝热材料360覆盖容器203的封闭部270，闭合部分270到侧壁部分272的一部分以延伸到侧壁部分272和感应线圈207之间。版权所有：（C）2013，JPO和INPIT

4. 发明专利

JP2007250802A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2007250802A
公开(公告)日：2007-09-27
申请号：JP2006071811
申请日：2006-03-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAGAYA TORU , MIYASHITA TOMOYASU
IPC分类号： H01L21/205 , H01F27/08 , H01L21/22 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To miniaturize a transformer housing chamber by suppressing heating of the transformer and preventing degradation due to heat of the transformer and peripheral parts. SOLUTION: The substrate processing apparatus comprises a process chamber for processing a substrate, a heating device for heating the process chamber, a power supply line which is connected to the heating device, a transformer provided on the power supply line, and a transformer housing chamber for housing the transformer. The transformer housing chamber comprises a first cooling gas supply means which supplies cooling gas into the transformer housing chamber, a cooling gas flow path which guides the cooling gas supplied in the transformer housing chamber to supply it to a local place in the transformer housing chamber, and a second cooling gas supply means which supplies the cooling gas having been supplied to the local place to the transformer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过抑制变压器的加热并防止由于变压器和周边部件的热导致的劣化，来使变压器容纳室小型化。解决方案：基板处理装置包括用于处理基板的处理室，用于加热处理室的加热装置，连接到加热装置的电源线，设置在电源线上的变压器和用于容纳变压器的变压器容纳室。变压器容纳室包括将冷却气体供应到变压器容纳室中的第一冷却气体供应装置，引导在变压器容纳室中供应的冷却气体以将其供应到变压器容纳室中的局部位置的冷却气体流动路径，以及将已经供应到本地的冷却气体供给到变压器的第二冷却气体供给装置。版权所有（C）2007，JPO＆INPIT

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