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1. 发明专利

JP2013115183A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2013115183A
公开(公告)日：2013-06-10
申请号：JP2011259082
申请日：2011-11-28
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHIRAYONE SHIGERU , TAMURA SATOYUKI
IPC分类号： H01L21/677 , B65G49/07
摘要： PROBLEM TO BE SOLVED: To maintain such a state that foreign matters do not adhere to a processed substrate W1 for a long time, without reducing the throughput, in a semiconductor manufacturing apparatus.SOLUTION: The semiconductor manufacturing apparatus comprises a plurality of processing chambers 1a, 1b in which a processed substrate W1 is processed, a transfer mechanism for transferring the processed substrate W1 to each of the plurality of processing chambers, and a transfer chamber 9 having the transfer mechanism internally. The transfer mechanism in the transfer chamber 9 includes a grounded conductive hand 13, and an insulating hand 10, and is provided with a substrate W2 dedicated to foreign matter adhesion, and a carry-in/carry-out chamber 7 of the substrate W2 dedicated to foreign matter adhesion. Foreign matters are made to adhere to the substrate W2 dedicated to foreign matter adhesion, and the substrate W2 to which foreign matters are adhering can be replaced.
摘要翻译：要解决的问题：在半导体制造装置中，为了保持这样的状态，即在不降低生产能力的情况下长时间地使外来物质不会附着在处理基板W1上。解决方案：半导体制造装置包括处理处理基板W1的多个处理室1a，1b，用于将处理基板W1转移到多个处理室中的各个处理室的传送机构和传送室9 内部具有传送机构。转印室9中的转印机构包括接地导电手13和绝缘手10，并且设置有专用于异物附着的基板W2和专用的基板W2的进/出口室7 对外来物附着。使异物附着在专用于异物附着的基板W2上，可以更换附着有异物的基板W2。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011049371A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2011049371A
公开(公告)日：2011-03-10
申请号：JP2009196772
申请日：2009-08-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ICHINO TAKAMASA , YOKOGAWA KATANOBU , TAMURA SATOYUKI , HIROMI KAZUYUKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching apparatus and a plasma processing method, for uniform etching processes from the central part in a wafer plane to edge part, by solving the problem of degradation in rate in a wafer edge part.
SOLUTION: The plasma processing apparatus performs a plasma process with a substrate W placed on a sample stage by supplying fluorocarbon based gas in a vacuum vessel 1. It is equipped with: a focus ring 7 arranged on the periphery of the substrate W; and a first supply means 2B and a second supply 2A which supply different gasses to the central part and the peripheral part of the substrate W. Different kinds of fluorocarbon based gasses are supplied from the first supply means 2B and the second supply means 2A to the central part and the outer peripheral part of the substrate W. Such fluorocarbon based gas as has a lower rate between carbon and fluorine (C/F ratio) than the central part of the substrate W, is supplied to the outer peripheral part of the substrate W.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决方案：通过解决晶片边缘部分的速率劣化的问题，提供了从晶片平面到边缘部分的中心部分的均匀蚀刻工艺的等离子体蚀刻装置和等离子体处理方法。解决方案：等离子体处理装置通过在真空容器1中供应氟碳基气体，通过将基板W放置在样品台上进行等离子体处理。其配备有：设置在基板W的周边上的聚焦环7 ; 以及向基板W的中央部和周边部供给不同气体的第一供给单元2B和第二供给单元2A。从第一供给单元2B和第二供给单元2A向不同种类的碳氟化合物气体供给中心部分和外周部分。这样的氟碳基气体（C / F比）比基板W的中心部分低（C / F比）被提供给基板的外周部分（C）2011，JPO＆INPIT

3. 发明专利

JP2005210140A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2005210140A
公开(公告)日：2005-08-04
申请号：JP2005068704
申请日：2005-03-11
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KOROYASU KUNIHIKO , FURUSE MUNEO , TAMURA SATOYUKI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To suppress generation of foreign particles from a plasma processing chamber to be operated as an earth electrode and components in the plasma processing chamber. SOLUTION: In a plasma processing apparatus for generating plasma in a processing chamber to process samples, a surface in contact with plasma in a plasma processing chamber 1 made of a metal conductor grounded to the earth is deposited with a plasma resistance macromolecular material (protective film) 14,105, which material has a relationship between relative dielectric constant kε and thickness t (μm), to be t/kε COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：抑制从作为等离子体处理室中的接地电极和部件的等离子体处理室中产生异物。解决方案：在用于在处理室中产生等离子体以处理样品的等离子体处理装置中，在等离子体处理室1中与由等离子体电阻大分子材料接地的金属导体制成的等离子体处理室1中接触的表面（保护膜）1410，该材料具有相对介电常数kε和厚度t（μm）之间的关系，为t /kε<300。此外，由具有等离子体电阻和吸收性能的树脂材料形成的保护膜105膨胀和收缩以紧密地固定在处理室1中的部件的外表面上。（C）2005，JPO＆NCIPI

4. 发明专利

JP2014116562A Semiconductor production equipment and method of eliminating static of substrate of the same 审中-公开
标题翻译：半导体生产设备和消除其基板静态的方法
公开(公告)号：JP2014116562A
公开(公告)日：2014-06-26
申请号：JP2012271744
申请日：2012-12-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SHIRAYONE SHIGERU , TAMURA SATOYUKI
IPC分类号： H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide semiconductor production equipment and a method of eliminating static of a substrate of the same, capable of achieving destaticization of a substrate at low cost.SOLUTION: The semiconductor production equipment includes a destaticization member 14 that is installed so as to receive application of ground potential and have a plurality of different distances with a substrate transfer surface that is to be a transfer route of a substrate W to be processed. In vacuum, when the substrate W to be processed is transferred, the substrate W to be processed is destaticized by using the relationship between a distance between the substrate W to be processed and the destaticization member 14 and a pressure of a vacuum transfer chamber 2.
摘要翻译：要解决的问题：提供半导体生产设备和消除其基板的静电的方法，能够以低成本实现基板的静电化。解决方案：半导体生产设备包括静电除去部件14，其被安装成接收地电位的施加，并且与要成为待处理的基板W的转移路径的基板转印面成为多个不同的距离。在真空中，当要处理的基板W被转移时，通过使用待处理的基板W与去静电部件14之间的距离与真空传送室2的压力之间的关系来将要处理的基板W去静电。

5. 发明专利

JP2013128005A Plasma treatment method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：JP2013128005A
公开(公告)日：2013-06-27
申请号：JP2011276097
申请日：2011-12-16
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAMURA HITOSHI , SHIRAYONE SHIGERU , TAMURA SATOYUKI
IPC分类号： H01L21/3065 , H01L21/677 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment method and apparatus, capable of facilitating suppression of adhering or residual material on a treated substrate surface or a transfer arm surface after plasma treatment.SOLUTION: In the plasma processing method, a treated substrate 105 is conveyed in a vacuum to a treatment chamber 205 with a transfer arm 106 for heating treatment after plasma treatment is performed in a treatment chamber 102. The treated substrate 105 before plasma treatment is heated. In addition, the transfer arm 106 is heated. The plasma treatment apparatus includes a heating mechanism for heating the transfer arm 106.
摘要翻译：解决的问题：提供等离子体处理方法和装置，其能够有助于抑制等离子体处理后处理的基板表面或转印臂表面上的附着或残留材料。解决方案：在等离子体处理方法中，经处理的基板105在处理室102中进行等离子体处理之后，用处理室105在处理室205中传送用于加热处理的传送臂106.处理后的等离子体处理的基板105 治疗加热。此外，传送臂106被加热。等离子体处理装置包括用于加热传送臂106的加热机构。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013115247A Cleaning method for shower plate 审中-公开
标题翻译：淋浴板清洗方法
公开(公告)号：JP2013115247A
公开(公告)日：2013-06-10
申请号：JP2011260346
申请日：2011-11-29
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： FURUSE MUNEO , FUKUYAMA RYOJI , TAMURA SATOYUKI , NAWATA MAKOTO
IPC分类号： H01L21/3065 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method for shower plate that can effectively remove residues at a hole part of a shower plate used for a plasma processing apparatus.SOLUTION: The cleaning method for shower plate used for the plasma processing apparatus including a plasma processing chamber and the shower plate for introducing gas into the plasma processing chamber includes: a preparing step of preparing the shower plate having a plurality of holes for introducing the gas into the plasma processing chamber and having been subjected to polishing processing using abrasives; and a cleaning step 14 of cleaning the shower plate having been subjected to the polishing processing using a pernitride solution including concentrated nitric acid and a hydrogen peroxide solution.
摘要翻译：要解决的问题：提供一种可以有效去除用于等离子体处理装置的喷淋板的孔部分的残留物的喷淋板的清洗方法。解决方案：包括等离子体处理室和用于将气体引入等离子体处理室的喷淋板的等离子体处理装置中使用的喷淋板的清洗方法包括：准备具有多个孔的喷淋板的准备步骤将气体引入等离子体处理室并且已经使用磨料进行抛光加工; 以及使用包含浓硝酸和过氧化氢溶液的氮氧化物溶液清洗已经进行了抛光处理的喷淋板的清洗步骤14。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2010212731A Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：JP2010212731A
公开(公告)日：2010-09-24
申请号：JP2010125505
申请日：2010-06-01
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MAEDA KENJI , TAMURA SATOYUKI , KOBAYASHI HIROYUKI , YOKOGAWA KATANOBU , KANEKIYO TADAMITSU
IPC分类号： H01L21/3065 , C23C16/50 , C23C16/52 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To improve the yield by greatly reducing foreign matter sticking on a wafer in a plasma processing process when a semiconductor device is manufactured.
SOLUTION: In a plasma processing apparatus having a plasma source whose plasma distribution can be controlled, the shape of a sheath/bulk boundary surface on the wafer is controlled to a convex shape at plasma On/Off time. By including a step in which at the plasma On/Off time, source electric power and wafer bias power which are rather low are applied so as to control the plasma distribution into a higher state at the periphery, a thick sheath is formed in the vicinity of the center of the wafer and a thinner sheath is formed in the vicinity of the outer periphery thereof.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过在制造半导体器件时在等离子体处理工艺中大大减少在晶片上粘附的异物来提高产量。解决方案：在具有可以控制等离子体分布的等离子体源的等离子体处理装置中，晶片上的鞘/体边界面的形状在等离子体开/关时被控制为凸形。通过包括在等离子体开/关时间施加相当低的源电功率和晶片偏置功率以便将等离子体分布控制在周边的较高状态的步骤，在附近形成厚的护套并且在其外周附近形成较薄的护套。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2007251034A Plasma processing method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：JP2007251034A
公开(公告)日：2007-09-27
申请号：JP2006075235
申请日：2006-03-17
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ANDO YOJI , MAEDA KENJI , TAMURA SATOYUKI , KANEKIYO TADAMITSU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which has a longer service life by suppressing conversion of a shower plate (blackening of the surface of the shower plate). SOLUTION: The plasma processing apparatus comprises: a shower plate made of silicon in a vacuum processing chamber; a gas supplying means for dispersing a processing gas in the vacuum processing chamber through the shower plate and supplying the gas; a lower electrode for carrying and holding a specimen as a processing-target object thereon in the processing chamber; and a biasing high frequency power supply for applying a bias voltage to the lower electrode. In a plasma processing method for the plasma processing apparatus, a high frequency energy is supplied into the vacuum processing chamber to generate a plasma and the specimen is subjected to plasma treatment using the generated plasma. The specimen includes: a silicon oxide film or a low-permittivity film as an interlayer insulating film; the processing gas contains a rare gas, a fluorocarbon-based gas, and a nitrogen gas; the rare gas has a partial pressure of 65% or higher; and the plasma treatment is carried out under a condition that the biasing high frequency power supply for supplying power to the specimen has a power density not larger than 2W/cm 2 . COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题：通过抑制淋浴板的转换（喷淋板的表面变黑）来提供具有更长使用寿命的等离子体处理装置。解决方案：等离子体处理装置包括：在真空处理室中由硅制成的喷淋板; 气体供给装置，用于通过喷淋板将处理气体分散在真空处理室中并供应气体; 下部电极，用于在处理室内携带并保持作为处理对象物体的试样; 以及用于向下电极施加偏置电压的偏置高频电源。在等离子体处理装置的等离子体处理方法中，将高频能量供给到真空处理室中以产生等离子体，并且使用所产生的等离子体对样品进行等离子体处理。试样包括：作为层间绝缘膜的氧化硅膜或低介电常数膜; 处理气体含有稀有气体，碳氟化合物气体和氮气; 稀有气体的分压为65％以上; 并且在对试样供电的偏置高频电源的功率密度不大于2W / cm 2的条件下进行等离子体处理。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2015041655A プラズマ処理装置およびプラズマ処理方法有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：JP2015041655A
公开(公告)日：2015-03-02
申请号：JP2013170898
申请日：2013-08-21
申请人：株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： IKENAGA KAZUYUKI , TAMURA SATOYUKI , KOBAYASHI HIROYUKI
IPC分类号： H01L21/3065 , H05H1/46
摘要：【課題】処理の歩留まりを向上させたプラズマ処理装置またはプラズマ処理方法を提供する。【解決手段】真空容器内部に配置された処理室と、この処理室内に配置されウエハがその上面に載せられるステージと、前記処理室内の前記ステージ上方の空間にプラズマを生成するため供給される電界の生成手段と、前記処理室内に処理用のガスを供給するための処理ガス供給手段と、前記処理室を減圧するための排気手段と、前記ステージの温度を調節する温度調節手段と、前記ウエハ上方にバイアス電位を形成するために前記ステージに印加される高周波電力を供給する高周波電源とを備え、前記処理室内に前記処理用のガスを供給して形成した前記プラズマを用いて前記ウエハを処理するプラズマ処理装置であって、前記ウエハの処理対象の膜の処理の終了後、前記高周波電力の供給を停止した状態で、前記処理室内に不活性ガスの導入を開始し前記電界の強度を小さくして前記処理室内にプラズマを所定の期間だけ形成する。【選択図】図1
摘要翻译：要解决的问题：提供能够提高处理成品率的等离子体处理装置或等离子体处理方法。解决方案：等离子体处理装置包括：设置在真空容器中的处理室; 布置在该处理室中并且其上表面放置晶片的阶段; 用于产生用于在处理室中的台上方的空间中产生等离子体的电场的装置; 处理气体供给装置，用于将处理气体供给到所述处理室中; 用于对处理室进行减压的排气装置; 温度调节装置，用于调节舞台的温度; 以及高频电源，用于为了在晶片上形成偏置电位的目的来提供要施加到平台的高频电力。等离子体处理装置通过使用通过将处理气体供给处理室而形成的等离子体来处理晶片。在晶片的处理目标膜的处理终止之后，在停止供给高频电力的状态下，开始向处理室中引入无效气体，电场强度降低到在处理室中形成等离子体只有预定的时间段。

10. 发明专利

JP2011034994A Plasma treating apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2011034994A
公开(公告)日：2011-02-17
申请号：JP2009176776
申请日：2009-07-29
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAMURA SATOYUKI , SHIRAYONE SHIGERU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To improve removal efficiency of a deposit at an edge in a substrate placement electrode in etching equipment for treating a substrate by applying a high-voltage high frequency to the substrate placement electrode and using treatment conditions of strong deposit properties.
SOLUTION: Plasma etching equipment includes a lower electrode that places a substrate to be treated in a vacuum treatment vessel and includes a means of applying high-frequency power, an upper electrode that is disposed at a position opposing the lower electrode and includes a means of applying high-frequency power, a gas introduction mechanism for introducing gas used for plasma treatment, and an evacuation mechanism capable of keeping the inside of the vacuum treatment vessel at a desired pressure. In the plasma etching equipment, a conductor line is formed at an electrode edge section outside the lower electrode, power is supplied to the conductor line in plasma cleaning, and the electrode edge section is heated, thus improving efficiency of plasma cleaning.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高通过向基板放置电极施加高压高频处理基板的蚀刻设备中的基板放置电极的边缘处的沉积物的去除效率，并且使用强沉积物的处理条件属性。等离子体蚀刻设备包括将待处理的基板放置在真空处理容器中的下电极，并且包括施加高频电力的装置，设置在与下电极相对的位置处的上电极，并且包括施加高频电力的方法，用于引入用于等离子体处理的气体的气体引入机构，以及能够将真空处理容器内部保持在期望压力的抽空机构。在等离子体蚀刻设备中，在下电极外侧的电极边缘部分形成导体线，在等离子体清洗中向导线供电，电极边缘部分被加热，从而提高等离子体清洗的效率。版权所有（C）2011，JPO＆INPIT

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