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    • 1. 发明专利
    • Wafer holder and electron microscope device
    • WAFER HOLDER和ELECTRON MICROSCOPE DEVICE
    • JP2005174599A
    • 2005-06-30
    • JP2003409235
    • 2003-12-08
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • SEYA HIDEKAZU
    • H01J37/20
    • PROBLEM TO BE SOLVED: To reduce wafer vibration causing image vibration, in an electron microscope for carrying out inclined observation of a semiconductor wafer.
      SOLUTION: A damping seat is mounted at the center part of this wafer holder. The damping seat is so structured as to support a contact part to the back face of a wafer by a thin plate of a resin material; and a longitudinal spring constant is set in a range 1-5 times as much as that at the center part of the wafer with a periphery fixed. Thereby, vibration of the wafer can efficiently be reduced while avoiding adhesion of foreign matter, and high-resolution observation is enabled.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了减少导致图像振动的晶片振动,在用于进行半导体晶片的倾斜观察的电子显微镜中。 解决方案:阻尼座安装在该晶片座的中心部分。 阻尼座被构造为通过树脂材料的薄板将接触部分支撑在晶片的背面; 并且纵向弹簧常数设定在晶片的中心部分的周长固定的1-5倍的范围内。 由此,能够有效地降低晶片的振动,同时避免异物的附着,能够进行高分辨率的观察。 版权所有(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Method of measuring size using charged particle beam and size measuring instrument
    • 使用充电粒子束和尺寸测量仪器测量尺寸的方法
    • JP2010160080A
    • 2010-07-22
    • JP2009003021
    • 2009-01-09
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • KITSUNAI HIROYUKISEYA HIDEKAZUKUDO TOMOYOSHITAMURA TAKUOKOBAYASHI MASAYUKI
    • G01B15/00H01J37/22H01J37/28H01L21/66
    • PROBLEM TO BE SOLVED: To measure sizes with high accuracy without being affected by the factors of size variation difficult to prevent by only controlling an irradiation amount on an area-by-area basis of beam scanning. SOLUTION: In this method and instrument, a position in a scanning area where a positive heap and a negative heap offset each other is selected as a measuring part, with the positive heap owing to the deposition of contamination caused by a beam while the negative heap owing to the removal of a specimen. Alternately, in the scanning area, a portion not affected or little affected by size variation is selected as a measurement part. In the scanning area, a proper position is selected in measuring sizes. Sizes are measured with high accuracy without being affected by the factors of size variation caused by beam application. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:通过仅在每个区域的基础上控制光束扫描的照射量,不会受尺寸变化的因素的影响而高精度地测量尺寸。 解决方案:在该方法和仪器中,选择正堆和负堆彼此偏移的扫描区域中的位置作为测量部分,由于由于光束引起的污染的沉积而产生正堆 由于去除了一个样本,这个负堆。 或者,在扫描区域中,选择不受尺寸变化影响或影响较小的部分作为测量部分。 在扫描区域中,在测量尺寸中选择适当的位置。 尺寸以高精度测量,不受光束应用引起的尺寸变化的因素的影响。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • Electrostatic adsorption mechanism and charged particle beam device
    • 静电吸附机构和充电颗粒光束装置
    • JP2008085290A
    • 2008-04-10
    • JP2007059352
    • 2007-03-09
    • Hitachi High-Technologies Corp株式会社日立ハイテクノロジーズ
    • SEYA HIDEKAZU
    • H01L21/683
    • PROBLEM TO BE SOLVED: To provide an electrostatic adsorption mechanism capable of suppressing a contact area between the rear face of a wafer and an electrostatic adsorption surface and maintaining a high rigidity state in the surface direction of the wafer even when deformation such as a warp exists in the wafer. SOLUTION: In the electrostatic adsorption mechanism 11 provided with a base 2, at least three support seats 5 supported on the base 2 and an electrostatic adsorption surface 6 for electrostatically adsorbing a mounted sample, the electrostatic adsorption surface 6 is supported by a plate sprint, and the plate spring is formed like a ring along the edge part of the sample or arranged in a divided state like a ring so that a straight line connecting a connection part with the base and a connection part with the electrostatic adsorption surface 6 is vertical to the tangent of a circle formed by the ring. COPYRIGHT: (C)2008,JPO&INPIT
    • 解决问题:提供一种静电吸附机构,其能够抑制晶片的背面与静电吸附面之间的接触面积,并且在晶片的表面方向上保持高的刚性状态,即使当诸如 在晶片中存在翘曲。 解决方案:在设置有基座2的静电吸附机构11中,支撑在基座2上的至少三个支撑座5和用于静电吸附安装的样品的静电吸附面6,静电吸附面6由 并且板簧沿着样品的边缘部分形成为环状,或者以类似环的分开状态布置,使得将连接部分与基部的直线连接到静电吸附表面6的连接部分 垂直于由环形成的圆的切线。 版权所有(C)2008,JPO&INPIT