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1. 发明专利

JP2014214035A 窒化物半導体自立基板の製造方法审中-公开
标题翻译：自支撑氮化物半导体衬底的制造方法
公开(公告)号：JP2014214035A
公开(公告)日：2014-11-17
申请号：JP2013091067
申请日：2013-04-24
申请人：日立電線株式会社 , Hitachi Cable Ltd
发明人： SUZUKI TAKAMASA
IPC分类号： C30B29/38 , C30B33/00
CPC分类号： C30B29/38 , C30B33/00
摘要：【課題】厚さが100μm以上350μm以下、直径が40mm以上、反りが20μm以下の窒化物半導体自立基板の製造方法を提供する。【解決手段】窒化物半導体自立基板の製造方法は、異種基板上にアンドープGaN層をエピタキシャル成長させ、その上にTi薄膜を形成し、所定のガス雰囲気中において熱処理を施して形成された下地基板を準備する工程と、前記下地基板の前記Ti薄膜側に所定の厚さまでエピタキシャル成長させてGaN層を形成する工程と、前記GaN層が形成された前記下地基板を冷却することにより、前記異種基板から前記GaN層を剥離する工程と、剥離された前記GaN層から、厚さ100μm以上350μm以下、直径40mm以上、反り量が20μm以下の自立基板を形成する工程と、含む。【選択図】図1
摘要翻译：要解决的问题：提供厚度为100μm以上且350μm以下，直径为40mm以上，翘曲为20μm以下的自支撑氮化物半导体基板的制造方法。：自支撑氮化物半导体衬底的制造方法包括：在与氮化物半导体不同的衬底上进行未掺杂的GaN层的外延生长的步骤，在其上形成Ti薄膜，并将其热处理预定的气体气氛以制备接地衬底; 在所述接地衬底的Ti薄膜侧使外延生长达预定厚度以形成GaN厚膜的步骤; 用于冷却其上形成GaN厚膜的接地衬底的步骤，以从不同种类的衬底分离GaN厚膜; 以及从分离的GaN厚膜形成厚度为100μm以上且350μm以下，直径为40mm以上，翘曲为20μm以下的自支撑基板的工序。

2. 发明专利

JP2011162439A Nitride semiconductor free-standing substrate and light emitter 有权
标题翻译：氮化物半导体自由基底座和发光二极管
公开(公告)号：JP2011162439A
公开(公告)日：2011-08-25
申请号：JP2011103358
申请日：2011-05-06
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SUZUKI TAKAMASA , MEGURO TAKESHI , ERI TAKESHI
IPC分类号： C30B29/38 , C23C16/01 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor free-standing substrate whose warpage is reduced, and a light emitter using the same. SOLUTION: The nitride semiconductor free-standing substrate is the one composed of continuously grown nitride semiconductor crystals, wherein the inside of the nitride semiconductor free-standing substrate is provided with inversion domains at density of 10 to 600 pieces/cm 2 in the cross-section parallel to the surface of the substrate, the surface of the substrate has inversion domains at density of 0 to 200 pieces/cm 2 , and the density of the inversion domains arriving at the surface of the substrate is lower than that of the inversion domains at the inside of the nitride semiconductor free-standing substrate. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供翘曲减小的氮化物半导体独立基板和使用其的发光体。解决方案：氮化物半导体自支撑衬底是由连续生长的氮化物半导体晶体构成的衬底，其中氮化物半导体独立衬底的内部设置有10至600个/ cm 2的密度的反转畴 > 2 时，衬底的表面具有0〜200个/ cm 2的密度的反转畴，SP 2的密度到达衬底表面的反转畴低于在氮化物半导体独立衬底的内部的反转畴的反向域。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2004047763A Method for manufacturing nitride semiconductor, semiconductor wafer, and semiconductor device 审中-公开
公开(公告)号：JP2004047763A
公开(公告)日：2004-02-12
申请号：JP2002203675
申请日：2002-07-12
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： FUJIKURA TSUNEAKI , SUZUKI TAKAMASA
IPC分类号： H01L29/26 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/12 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To remarkably reduce the dislocation density of a nitride semiconductor formed on a substrate. SOLUTION: A method for manufacturing the nitride semiconductor includes steps of epitaxially growing a III-V-IV mixed crystal buffer layer 2 represented by a formula (In a Al b Ga c N) x Si y (a≥0, b≥0, c≥0, x>0, y>0, a+b+c=1, and x+y=1) on a single-crystal insulating substrate 1 by alternatively supplying a group III raw material, a group V raw material, and a group IV raw material to the surface of the substrate, and forming a nitride semiconductor layer 3 having a crystal structure of a single crystal on the buffer layer 2 by an epitaxial growing method. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004047762A Method for manufacturing nitride semiconductor, semiconductor wafer, and semiconductor device 有权
标题翻译：制造氮化物半导体，半导体器件和半导体器件的方法
公开(公告)号：JP2004047762A
公开(公告)日：2004-02-12
申请号：JP2002203674
申请日：2002-07-12
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： FUJIKURA TSUNEAKI , SUZUKI TAKAMASA
IPC分类号： H01L29/26 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To remarkably reduce the dislocation density of a nitride semiconductor formed on a substrate. SOLUTION: A method for manufacturing the nitride semiconductor includes steps of epitaxially growing a III-V-IV mixed crystal buffer layer represented by a formula (In a Al b Ga c N) x Si y (a≥0, b≥0, c≥0, x>0, y>0, a+b+c=1, x+y=1) on a single-crystal insulating substate 1, and forming a nitride semiconductor layer 3 which has a crystal structure of a single crystal on the buffer layer 2 by an epitaxial growing method. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：显着降低在基板上形成的氮化物半导体的位错密度。解决方案：一种用于制造氮化物半导体的方法包括以下步骤：外延生长由式（In a Al b （a≥0，b≥0，c≥0，x> 0，y> 0，a） + b + c = 1，x + y = 1），并且通过外延生长法在缓冲层2上形成具有单晶晶体结构的氮化物半导体层3。版权所有（C）2004，JPO

5. 发明专利

JP2012020934A Method for producing nitride semiconductor substrate 有权
标题翻译：生产氮化物半导体基板的方法
公开(公告)号：JP2012020934A
公开(公告)日：2012-02-02
申请号：JP2011231199
申请日：2011-10-21
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： MEGURO TAKESHI , SUZUKI TAKAMASA , IKEDA TAKESHI
IPC分类号： C30B29/38 , C30B25/18 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor substrate capable of producing the nitride semiconductor substrate with a small variation in off-axis angle.SOLUTION: The method for producing a nitride semiconductor substrate comprises forming a nitride semiconductor layer (2) on a sapphire substrate (1) and fabricating a self-standing nitride semiconductor substrate (3) by using the nitride semiconductor layer (2) separated from the sapphire substrate (1), wherein the C-axes are inclined in advance in a radially-outward direction on a front surface of the sapphire substrate (1), so as to cancel inclinations of the C-axes of the nitride semiconductor layer (2) in a radially-inward direction caused by warpage due to a difference in defect density of front/back surfaces of the separated nitride semiconductor layer (2).
摘要翻译：解决的问题：提供一种能够制造偏离角度偏差小的氮化物半导体衬底的氮化物半导体衬底的制造方法。解决方案：制造氮化物半导体衬底的方法包括：在蓝宝石衬底（1）上形成氮化物半导体层（2），并通过使用氮化物半导体层（2）制造自立氮化物半导体衬底（3）与蓝宝石衬底（1）分离，其中C轴在蓝宝石衬底（1）的前表面上沿径向向外的方向预先倾斜，以消除氮化物半导体的C轴的倾斜度由于分离的氮化物半导体层（2）的前/后表面的缺陷密度差引起的翘曲引起的沿着径向向内方向的层（2）。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2007197240A Method for manufacturing gallium nitride single crystal substrate and gallium nitride single crystal substrate 审中-公开
标题翻译：氮化硅单晶基板和氮化镓单晶基板的制造方法
公开(公告)号：JP2007197240A
公开(公告)日：2007-08-09
申请号：JP2006016316
申请日：2006-01-25
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： MEGURO TAKESHI , SUZUKI TAKAMASA , KAWAGUCHI YUSUKE
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To manufacture a gallium nitride single crystal substrate having low defect density.
SOLUTION: A gallium nitride ingot 2 is obtained by growing a gallium nitride crystal on a gallium nitride single crystal substrate 1. If necessary, the outer shape of the obtained ingot 2 is processed to obtain a columnar gallium nitride ingot 3. Then, gallium nitride single crystal substrates 4a are cut out of the part, grown at last half, of the gallium nitride ingot 2 (or 3), and a new gallium nitride ingot 2 is prepared by growing a gallium nitride crystal on a gallium nitride single crystal substrate 1 being a seed crystal substrate, by using one of the substrates 4a as the seed crystal substrate. Gallium nitride single crystal substrates 4 are manufactured by cutting the newly grown gallium nitride ingot 2. This manufacturing process is repeated, and thereby, the gallium nitride single crystal substrate having few defects can be obtained.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：制造具有低缺陷密度的氮化镓单晶衬底。解决方案：通过在氮化镓单晶衬底1上生长氮化镓晶体来获得氮化镓锭2.如果需要，将获得的锭2的外形加工成柱状氮化镓锭3.然后在氮化镓锭2（或3）的后半部分生长的部分切掉氮化镓单晶衬底4a，并且通过在氮化镓单晶上生长氮化镓晶体来制备新的氮化镓锭2 晶体基板1是晶种基板，通过使用基板4a中的一个作为晶种基板。通过切割新生长的氮化镓锭2来制造氮化镓单晶衬底4.重复该制造工艺，从而可以获得缺陷少的氮化镓单晶衬底。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2013183149A Gallium nitride-based semiconductor epitaxial wafer and method of manufacturing the same 有权
标题翻译：基于氮化镓的半导体外延晶体及其制造方法
公开(公告)号：JP2013183149A
公开(公告)日：2013-09-12
申请号：JP2012048234
申请日：2012-03-05
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SUZUKI TAKAMASA
IPC分类号： H01L21/205 , B82Y30/00 , B82Y40/00 , C23C16/34 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide: a gallium nitride-based semiconductor epitaxial wafer that suppresses off angle variations in a plane of a nitride semiconductor layer even when used a gallium nitride substrate whose off angle is non-uniform in a plane; and a method of manufacturing the same.SOLUTION: A gallium nitride-based semiconductor epitaxial wafer 10 has a buffer layer 12 composed of gallium nitride and one or more nitride semiconductor layers 13 on a gallium nitride substrate 11. The nitride semiconductor layers 13 cause less off angle variations than the gallium nitride substrate 11. An intermediate layer 14 is epitaxially grown between the gallium nitride substrate 11 and the buffer layer 12. The intermediate layer 14 is composed of a quantum dot 15 having an indium composition of not less than 0.1 nor more than 0.4 and having a diameter of not less than 10 nm nor more than 200 nm.
摘要翻译：要解决的问题：提供一种氮化镓基半导体外延晶片，即使在氮化镓衬底的偏角在平面内不均匀时也能抑制氮化物半导体层的平面偏角变化; 及其制造方法。解决方案：氮化镓基半导体外延晶片10具有由氮化镓构成的缓冲层12和氮化镓衬底11上的一个或多个氮化物半导体层13.氮化物半导体层13导致较少在氮化镓衬底11和缓冲层12之间外延生长中间层14.中间层14由铟组成不小于0.1的量子点15构成，大于0.4，直径不小于10nm，不大于200nm。

8. 发明专利

JP2012232884A Nitride semiconductor substrate, manufacturing method therefor and device employing the same 审中-公开
标题翻译：氮化物半导体衬底，其制造方法及其使用的器件
公开(公告)号：JP2012232884A
公开(公告)日：2012-11-29
申请号：JP2012044287
申请日：2012-02-29
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SUZUKI TAKAMASA
IPC分类号： C30B29/38 , C30B25/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a high-resistance nitride semiconductor substrate which is hard to crack.SOLUTION: A self-supported nitride semiconductor substrate 10 of which the diameter is 40 mm or more and of which the thickness is 200 μm or more is provided which is obtained by forming a nitride semiconductor layer 1 comprised of a first layer B and a second layer F on the surface of an underlying substrate and separating the nitride semiconductor layer 1 from the underlying substrate. The second layer F is formed in such a manner that the average dislocation density within a plane of its surface becomes 1×10cmor more and less than 1×10cmand the electrical resistivity becomes larger than 0.02 Ωcm, and the first layer B is formed in such a manner that the electrical resistivity becomes smaller than that of the second layer F.
摘要翻译：要解决的问题：提供难以破裂的高电阻氮化物半导体衬底。解决方案：提供直径为40mm以上且厚度为200μm以上的自支撑氮化物半导体基板10，其通过形成由第一层B构成的氮化物半导体层1而获得以及在下面的衬底的表面上的第二层F，并将氮化物半导体层1与下面的衬底分离。第二层F形成为使得其表面的平面内的平均位错密度变为1×10 -2 < / SP>以上且小于1×10 2 ，电阻率变得大于0.02Ωcm，并且第一层B形成为电阻率小于第二层F的电阻率。（C）2013，JPO＆INPIT

9. 发明专利

JP2012066974A Nitride semiconductor wafer and manufacturing method therefor 审中-公开
标题翻译：氮化物半导体波长及其制造方法
公开(公告)号：JP2012066974A
公开(公告)日：2012-04-05
申请号：JP2010213754
申请日：2010-09-24
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SUZUKI TAKAMASA
IPC分类号： C30B29/38 , B23K26/00 , H01L21/02 , H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide an independent nitride semiconductor wafer having an identification code with which the time required for marking can be shortened and a manufacture history of a ground substrate can be easily traced.SOLUTION: In an independent nitride semiconductor wafer obtained by growing a nitride semiconductor layer 13 on a ground substrate 11 to which an identification code 12 has been added, and separating the nitride semiconductor layer 13 from the ground substrate 11, the nitride semiconductor layer 13 has a transfer identification code 16 to which the identification code 12 has been transferred during the growth.

10. 发明专利

JP2005213063A Nitride semiconductor free-standing substrate, its production method, and nitride semiconductor luminescent element using the same 有权
标题翻译：氮化物半导体自由基底板，其制造方法和使用其的氮化物半导体发光元件
公开(公告)号：JP2005213063A
公开(公告)日：2005-08-11
申请号：JP2004018884
申请日：2004-01-27
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SUZUKI TAKAMASA
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/208 , H01L21/28 , H01L29/12 , H01L31/0256 , H01L33/32
CPC分类号： C30B29/403 , C30B25/02 , C30B25/183 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L33/007 , H01L33/16
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor free-standing substrate for yielding a luminescent element exhibiting a high luminescent power at a low driving voltage. SOLUTION: The nitride semiconductor free-standing substrate, which has a diameter of at least 10 mm and of which the X-ray diffraction half width of at least either of a ä20-24} diffraction plane and a ä11-24} diffraction plane is 500 sec or less, can be produced by (1) forming a first nitride semiconductor layer with a dislocation density of 10 n /cm 2 (0 -n cm 2 or less, penetrating in the membrane thickness direction, and with a density of 10 n-2 /cm 2 , (4) forming a second nitride semiconductor layer with a thickness of 50 μm or more on the mask layer, and (5) removing the base substrate or the mask layer. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在低驱动电压下产生显示高发光功率的发光元件的氮化物半导体独立基板。解决方案：氮化物半导体自支撑衬底，其直径至少为10mm，并且其中X射线衍射半值宽度为ä20-24}衍射平面和ä11-24} 衍射面为500秒以下，可以通过（1）形成位错密度为10 的第一氮化物半导体层（0 -n cm 2 或更小，渗透膜厚度方向，密度为10 n-2 / cm 2 < / SP>，（4）在掩模层上形成厚度为50μm以上的第二氮化物半导体层，（5）除去基底或掩模层。版权所有（C）2005，JPO＆NCIPI

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