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1. 发明专利

JPH04316395A METHOD OF ROUGHING POLYIMIDE FILM 失效
公开(公告)号：JPH04316395A
公开(公告)日：1992-11-06
申请号：JP10978291
申请日：1991-04-15
申请人： HITACHI CABLE
发明人： YAMAGISHI RYOZO
IPC分类号： C08J7/00 , C08J7/12 , H05K3/18 , H05K3/38
摘要： PURPOSE:To obtain excellent adhesive properties of a metal film inexpensively by mechanically roughing a polyimide film and then chemically roughing it with alkaline solution of oxidizer. CONSTITUTION:After a polyimide film is mechanically roughed by a wire brush, it is chemically roughed with alkaline solution of oxidizer. Then, stannous chloride acidic with hydrochloric acid is used as a sensitizer, hydrochloric acid- palladium chloride is used as an activator, it is activated by a catalyst by a sensitizer-activator method, and copper is electrolessly plated by using electrolessly plating bath containing EDTA. Thus, micropores are generated by the chemical roughing in rough grooves generated on the surface by the mechanical roughing to strengthen an anchoring effect on a metal film formed by the electrolessly plating, and excellent adhesive properties of the film can inexpensively be obtained.

2. 发明专利

JPH0312409B2 失效
公开(公告)号：JPH0312409B2
公开(公告)日：1991-02-20
申请号：JP23919084
申请日：1984-11-13
申请人： HITACHI CABLE
发明人： KATO NAOYOSHI , SATO NORIO , KUMAGAI TAKEO , NEMOTO RISABURO , OOTANI NORIO , YAMAGISHI RYOZO
IPC分类号： H01B9/02 , H01B13/00 , H01B13/22 , H01B13/34

3. 发明专利

JPH0310712B2 失效
公开(公告)号：JPH0310712B2
公开(公告)日：1991-02-14
申请号：JP440483
申请日：1983-01-14
申请人： HITACHI CABLE
发明人： ISHIKAWA TETSUO , SUZUMURA TAKASHI , KAYANE KOICHI , YAMAGISHI RYOZO , YOSHIDA HIROMICHI
IPC分类号： C25D7/00 , C23C18/16 , C23C18/31 , C23C18/34 , C25D7/06 , D06M11/00 , D06M11/83 , D06M11/84 , D06M101/00 , D06M101/40

4. 发明专利

JPH0123947B2 失效
公开(公告)号：JPH0123947B2
公开(公告)日：1989-05-09
申请号：JP18425284
申请日：1984-09-03
申请人： HITACHI CABLE
发明人： OKABE NORIO , YOSHIOKA OSAMU , YAMAGISHI RYOZO , NAGAYAMA SADAO
IPC分类号： H01L23/50 , H01B5/02 , H01L23/495
摘要： PURPOSE:To improve soldering property by a method wherein, when lead wire for electric part or lead frame is produced, a glossy copper plated layer at least 0.5mum thick is provided on overall surface of a conductor 1 made of copper alloy to be coated with a silver plated layer. CONSTITUTION:A glossy copper plated layer 2 at least 0.5mum thick is provided on overall surface of a conductor 1 made of copper alloy to be coated with a silver plated layer 3. The purpose of glossy copper plated layer 2 is to avoid any defect in the conductor 1 as the base metal as well as to make the crystal of silver plated layer 3 coated thereon fine and even. As for the glossy copper plated layer 2, copper sulfate bath,copper cyanide bath and copper pyro phosphoric acid bath are applicable including any other processes making fine crystalline even and smooth plating feasible. Through these procedures, soldering property may be improved preventing any oxide film from being formed on the interface between copper and silver even after heat treatment.

5. 发明专利

JPS6367583B2 失效
公开(公告)号：JPS6367583B2
公开(公告)日：1988-12-26
申请号：JP5637982
申请日：1982-04-05
申请人： HITACHI CABLE
发明人： SUZUMURA TAKASHI , ISHIKAWA TETSUO , OOWADA HIROKATSU , YOSHIDA HIROMICHI , YAMAGISHI RYOZO
IPC分类号： D06M11/00 , C25D7/00 , C25D7/06 , D06B3/02 , D06M11/83 , D06M11/84 , D06M23/00

6. 发明专利

JPS63142644A FILM CARRIER FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63142644A
公开(公告)日：1988-06-15
申请号：JP28930086
申请日：1986-12-04
申请人： HITACHI CABLE
发明人： OKABE NORIO , YAMAGISHI RYOZO
IPC分类号： H01L21/60
摘要： PURPOSE:To prevent a whisker of a lead frame from occurring and to keep the good soldering adaptability even after many hours by a method wherein a first Sn-plated layer is formed on the surface of a conductor film, on this layer a thin Pb-plated layer is then formed and, additionally, a second thin Sn-plated layer is formed on this layer. CONSTITUTION:A lead 5 is composed of the following three: a first Sn-plated layer 9 used to achieve an Au-Sn eutectic bonding process of an Au bump 14 on an electrode 13 at an IC chip 12 to the surface of a sheet of copper leaf 8 glued onto a film; a thin Pb-plated layer 10 formed on the layer 9; a second thin Sn-plated layer 11 formed on the layer 10. The thickness of the first Sn- plated layer 9 is not specified, but it is preferable that the thickness is about 0.3-0.8mum. The thickness of the Pb-plated layer 10 is preferably to be less than one-tenth the thickness of the first Sn-plated layer 9. It is preferable that the thickness of the second Sn-plated layer 11 is 0.01-0.05mum. The first Sn- plated layer 9, the Pb-plated layer 10 covering this layer and the second Sn- plated layer 11 covering this layer may be formed either on the whole or on a part of the lead 5, respectively.

7. 发明专利

JPS6312385B2 失效
公开(公告)号：JPS6312385B2
公开(公告)日：1988-03-18
申请号：JP4890981
申请日：1981-04-01
申请人： HITACHI CABLE
发明人： YAMAGISHI RYOZO , YOSHIOKA OSAMU
IPC分类号： H01L21/52 , H01L23/495 , H01L23/50

8. 发明专利

JPS62213269A LEAD FRAME FOR SEMICONDUCTOR 失效
公开(公告)号：JPS62213269A
公开(公告)日：1987-09-19
申请号：JP5647586
申请日：1986-03-14
申请人： HITACHI CABLE
发明人： YOSHIOKA OSAMU , YAMAGISHI RYOZO , NAGAYAMA SADAO
IPC分类号： H01L23/50 , H01L21/48 , H01L23/495
摘要： PURPOSE:To improve wire-bonding properties and moisture resistant properties and facilitate significant cost savings by a method where in Cu plating layers are provided at least on the device mounting part and the tips of inner leads of a lead frame composed of a metal substrate. CONSTITUTION:After a lead frame 1, which is made of steel alloy material and formed into a predetermined pattern for a DIL (dual in line) package by photoetching or the like is subjected to a pretreatment of plating such as degreasing and pickling, electroplating is carried out in a copper sulfate plating bath to form a Cu alloy plating layer 2 with the thickness of 4mum over the whole surface of the lead frame 1. While the lead frame 1 is heated in the reducing atmosphere, an IC device 7 is mounted and fixed on the device mounting part 3 by soldering 8 or the like and further post parts 6 at the tips of inner leads 4 and the IC device 7 are connected with Au wires 9 or 30mum phiby wire bonding. Outer leads 5 are bent downward with an approximate right angle to finish assembly. After assembly, the assembled parts are sealed and fixed by synthetic resin 10 to complete a semiconductor device.

9. 发明专利

JPS62205296A PRODUCTION OF METALLIC FOIL TAPE FOR SHIELDING ELECTROMAGNETIC WAVE 失效
公开(公告)号：JPS62205296A
公开(公告)日：1987-09-09
申请号：JP4805386
申请日：1986-03-05
申请人： HITACHI CABLE
发明人： ISHIKAWA TETSUO , SUZUKI KATSUMI , SATO HIDEAKI , YAMAGISHI RYOZO , FUKUDA SHIGEO , SASAKI SATOSHI
IPC分类号： C25D1/04 , C25D1/08 , H05K9/00
摘要： PURPOSE:To produce a metallic foil tape for shielding electromagnetic waves having fine patterns at a high speed by forming a metallic plating layer on the surface of a material to be plated on which the patterns are formed of a plating resist while blowing a plating liquid thereto. CONSTITUTION:The patterns of a network shape, porous shape, etc., is formed on the outside peripheral face of a stainless steel drum 1 by using the plating resist consisting of a soft PVC, etc. While the above-mentioned drum 1 is rotated at a low speed around a horizontal revolving shaft 10 in the plating liquid 2, the plating liquid 2 is blown from a nozzle 4 by a pump 3 onto the peripheral surface side of the drum 1. The drum 1 is brought into electrical contact with a cathode power feed material 7 to pass electric current between said material and an anode 8 provided in the plating liquid 2, by which the plating is executed. The metallic plating layer 5 formed on the drum 1 is thereby stripped and the metallic foil tape for shielding electromagnetic waves having the fine patterns of the network shape, porous shape, etc. is obtd.

10. 发明专利

JPS6212316B2 失效
公开(公告)号：JPS6212316B2
公开(公告)日：1987-03-18
申请号：JP7406380
申请日：1980-06-02
申请人： HITACHI CABLE
发明人： YOSHIOKA OSAMU , YAMAGISHI RYOZO , NAGAYAMA SADAO
IPC分类号： C25D5/24 , B23K1/20 , C25D5/48

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