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1. 发明专利

JP2014082265A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2014082265A
公开(公告)日：2014-05-08
申请号：JP2012228092
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/028 , H01S5/12 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser element comprises: a layer structure 100 including a lower clad layer, an upper clad layer, an active layer interposed between the lower clad layer and the upper clad layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer; and a coating film 101 formed on a light emission end surface LES of the layer structure 100. A film thickness d in positions corresponding to a plurality of regions of the coating film 101 is set according to a refractive angle which is an angle formed between a laser beam refraction direction in the positions corresponding to the plurality of regions and a normal line of a light emission end surface LES so that laser beam amplitude reflectance on a coating film surface CFS becomes a desired value.
摘要翻译：要解决的问题：提供一种半导体激光元件和激光束偏转器，其能够沿规定方向发射激光并改变其发射方向。解决方案：半导体激光元件包括：层结构100，包括下包层介于下包层和上包层之间的有源层，用于向有源层中的多个区域提供驱动电流的多个驱动电极，以及形成在层结构体100的发光端面LES上的涂膜101.在涂膜101的多个区域的位置对应的位置的膜厚d根据折射角设定，该折射角为在与多个区域对应的位置的激光束折射方向和发光端面LES的法线，使得涂膜表面CFS上的激光束振幅反射率成为期望值。

2. 发明专利

JP2014082259A Method for driving semiconductor laser element, semiconductor laser module, and method for setting semiconductor laser module 有权
标题翻译：用于驱动半导体激光元件的方法，半导体激光器模块和用于设置半导体激光器模块的方法
公开(公告)号：JP2014082259A
公开(公告)日：2014-05-08
申请号：JP2012228040
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/062 , G02B1/02 , H01S5/10 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a method for driving a semiconductor laser element capable of emitting a laser beam in one prescribed direction and changing an emission direction thereof.SOLUTION: A method for driving a semiconductor laser element 10 includes the steps of: selecting a drive electrode E2 on the basis of association information which associates information on a laser beam emission direction with information on the drive electrode E2 which supplies driving current to emit the laser beam in the laser beam emission direction when a signal is input which includes information on the laser beam emission direction; and driving the semiconductor laser element 10 by supplying the driving current to the selected drive electrode E2. The step of driving the semiconductor laser element 10 uses the information determined in advance on the basis of the relationship between a signal which selects the drive electrode E2 and a direction of the laser beam emitted from the semiconductor laser element 10 by supplying the driving current to the drive electrode E2 selected by the signal as the association information.
摘要翻译：要解决的问题：提供一种驱动能够沿一个规定方向发射激光的半导体激光元件的方法和改变其发射方向的方法。解决方案：一种用于驱动半导体激光元件10的方法包括以下步骤：驱动电极E2基于关于激光束发射方向的信息与输入驱动电流的信息相关联的关联信息，以在输入信号时输出激光束的激光束的信号，该信号包括关于激光束发射方向; 并通过向所选择的驱动电极E2提供驱动电流来驱动半导体激光元件10。驱动半导体激光元件10的步骤使用基于通过向驱动电极E2提供驱动电流来选择驱动电极E2的信号和从半导体激光元件10发射的激光束的方向之间的关系而预先确定的信息由信号选择的驱动电极E2作为关联信息。

3. 发明专利

JP2013161965A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013161965A
公开(公告)日：2013-08-19
申请号：JP2012023129
申请日：2012-02-06
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/183
CPC分类号： H01L33/105 , H01L2933/0083 , H01S5/0425 , H01S5/105 , H01S5/18 , H01S5/183 , H01S2301/02 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can obtain a sufficient optical output and inhibit outgoing radiation of noise light caused by a photonic crystal.SOLUTION: A semiconductor light-emitting element comprises an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. The active layer 3 and the electrode 8 have different conductivity types from each other and the active layer 3 and the electrode 9 have different conductivity types from each other . The electrode 8 includes an opening 8a. The electrode 8, the active layer 3, the photonic crystal layer 4, and the electrode 9 are stacked along an X axis. The X axis passes a central part 8a2 of the opening 8a when viewed from an axial direction of the X axis. The electrode 9 has an end 9e1 positioned in an opposite direction to a Y axis direction when viewed from the X axis and an end 9e2 positioned in the Y axis direction. The opining 8a has an end 8e1 positioned in the opposite direction to the Y axis when viewed from the X axis and an end 8e2 positioned in the Y axis direction. The end 9e1 of the electrode 9 and the end 8e1 of the opening 8a substantially coincide with each other when viewed from the axial direction of the X axis.
摘要翻译：要解决的问题：提供一种能够获得足够的光输出并抑制由光子晶体引起的噪声光的出射辐射的半导体发光元件。解决方案：半导体发光元件包括电极8，有源层3 ，光子晶体层4和电极9.有源层3和电极8具有彼此不同的导电类型，并且有源层3和电极9彼此具有不同的导电类型。电极8包括开口8a。电极8，有源层3，光子晶体层4和电极9沿X轴堆叠。当从X轴的轴向观察时，X轴通过开口8a的中心部分8a2。电极9具有从X轴观察时沿与Y轴方向相反的方向定位的端部9e1和位于Y轴方向的端部9e2。正视8a具有从X轴观察到的与Y轴相反的方向的端部8e1和位于Y轴方向的端部8e2。当从X轴的轴向观察时，电极9的端部9e1和开口8a的端部8e1基本上彼此重合。

4. 发明专利

JP2013077757A End face light-emission type photonic crystal laser element 有权
标题翻译：端面发光型光电晶体激光元件
公开(公告)号：JP2013077757A
公开(公告)日：2013-04-25
申请号：JP2011217736
申请日：2011-09-30
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/12
CPC分类号： H01S5/0421 , H01S5/0425 , H01S5/0653 , H01S5/105 , H01S5/1203 , H01S5/34313 , H01S5/34353
摘要： PROBLEM TO BE SOLVED: To provide an end face light-emission type photonic crystal laser element capable of stably emitting laser light.SOLUTION: An end face light-emission type photonic crystal laser element 10 has four end faces surrounding an X-axis, and one of the end faces is a laser light emission face SF, and a face opposed to the laser light emission face among the end faces is a reverse side end face SB, and a remaining pair of the end faces are side end faces SR, SL. When the end face light-emission type photonic crystal laser element 10 is seen from an X-axis direction, one end of an upper electrode E2 is overlaid on the laser light emission face SF, and the upper electrode E2 and the reverse side end face SB are separated from each other. The upper electrode E2 and both of the side end faces SR, SL are separated from each other, and one end of an active layer 3B is overlaid on the laser light emission face SF.
摘要翻译：要解决的问题：提供能够稳定地发射激光的端面发光型光子晶体激光元件。解决方案：端面发光型光子晶体激光元件10具有围绕X轴的四个端面，其中一个端面是激光发射面SF，和与激光发射相对的面端面之间的面是反面端面SB，其余一对端面是侧端面SR，SL。当从X轴方向观察端面发光型光子晶体激光元件10时，上部电极E2的一端重叠在激光出射面SF上，上部电极E2和反面端面 SB彼此分离。上端电极E2和两侧端面SR，SL彼此分离，有源层3B的一端覆盖在激光发射面SF上。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013077756A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2013077756A
公开(公告)日：2013-04-25
申请号：JP2011217732
申请日：2011-09-30
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , HIROSE KAZUYOSHI , WATANABE AKIYOSHI , KUROSAKA YOSHITAKA , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/18 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of outputting a laser beam with high efficiency.SOLUTION: The semiconductor laser element includes: a lower cladding layer B that is composed of a semiconductor; an upper cladding layer C that is composed of the semiconductor; and a core layer A that is sandwiched between the lower cladding layer B and the upper cladding layer C, is composed of a plurality of semiconductor layers that are stacked, and has a higher average refractive index than both of the lower cladding layer B and the upper cladding layer C. The core layer A includes an active layer 3B composed of a quantum well layer and a photonic crystal layer 4, the electric field intensity distribution in the thickness direction in the core layer A at the time of operating has two peaks, and the location of the valley between peaks is set to be in a region between the active layer 3B and the photonic crystal layer 4.
摘要翻译：要解决的问题：提供能够高效率地输出激光束的半导体激光元件。解决方案：半导体激光元件包括：由半导体构成的下包层B; 由半导体构成的上包层C; 并且夹在下包层B和上包层C之间的芯层A由堆叠的多个半导体层构成，并且具有比下包层B和下包层C均低的平均折射率芯层A包括由量子阱层和光子晶体层4构成的有源层3B，芯层A中的厚度方向的电场强度分布在工作时具有两个峰值，并且峰之间的谷的位置被设置在有源层3B和光子晶体层4之间的区域中。版权所有（C）2013，JPO和INPIT

6. 发明专利

JP2012033748A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033748A
公开(公告)日：2012-02-16
申请号：JP2010172580
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A main surface of the basic layer 6A is a (001) plane. A lateral face of the hole H has two different {100} planes.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6供给光的有源层4.基层6A的主表面为（001）面。孔H的侧面具有两个不同的ä100}平面。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012033747A Semiconductor surface light emitting element, and method of manufacturing the same 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：JP2012033747A
公开(公告)日：2012-02-16
申请号：JP2010172578
申请日：2010-07-30
申请人： Hamamatsu Photonics Kk , Kyoto Univ , 国立大学法人京都大学 , 浜松ホトニクス株式会社
发明人： HIROSE KAZUYOSHI , FURUTA SHINICHI , WATANABE AKIYOSHI , SUGIYAMA TAKAHIRO , SHIBATA TADATOKU , KUROSAKA YOSHITAKA , NODA SUSUMU
IPC分类号： H01S5/183
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/1225 , H01L33/005 , H01L2933/0083 , H01S5/105 , H01S5/18 , H01S5/3202 , H01S5/3432 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor surface light emitting element and a method of manufacturing the same capable of improving characteristics.SOLUTION: A semiconductor surface light emitting element has: a photonic crystal layer 6 formed by forming a plurality of holes H in a basic layer 6A made of a first compound semiconductor having a zinc blende structure periodically, and growing a buried layer 6B having a zinc blende structure and made of a second compound semiconductor in the hole H; and an active layer 4 that supplies light to the photonic crystal layer 6. A main surface of the basic layer 6A is a (001) plane. A lateral face of the hole H has at least three different {100} planes.
摘要翻译：要解决的问题：提供一种能够提高特性的半导体表面发光元件及其制造方法。解决方案：半导体表面发光元件具有：通过在由具有闪锌矿结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而形成的光子晶体层6，并且生长掩埋层6B 具有闪锌矿结构并由孔H中的第二化合物半导体制成; 以及向光子晶体层6供给光的有源层4.基层6A的主表面为（001）面。孔H的侧面具有至少三个不同的ä100}平面。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2014082262A Semiconductor laser element and semiconductor laser module 有权
标题翻译：半导体激光器元件和半导体激光器模块
公开(公告)号：JP2014082262A
公开(公告)日：2014-05-08
申请号：JP2012228049
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of emitting a laser beam in the same direction for each of a plurality of drive electrodes and changing an emission direction thereof.SOLUTION: A semiconductor laser element 10A comprises an oscillation unit which generates a plurality of laser beams and outputs the plurality of generated laser beams in the same direction and a deflection unit which deflects each of the plurality of laser beams output by the oscillation unit in the same direction in a different direction. The oscillation unit comprises a lower clad layer 2, an upper clad layer 5, an active layer 3B, a first photonic crystal layer 41, and a plurality of drive electrodes E2. The deflection unit includes a second photonic crystal layer 43. The first photonic crystal layer 41 has a periodic structure in which an arrangement period of a different-refractive-index part 4B is the same across regions corresponding to a plurality of regions R. The second photonic crystal layer 43 has a periodic structure in which the arrangement period of the different-refractive-index part 4B differs for each of the regions corresponding to the plurality of regions S.
摘要翻译：要解决的问题：提供能够对于多个驱动电极中的每一个发射相同方向的激光束并改变其发射方向的半导体激光元件。解决方案：半导体激光元件10A包括振荡单元，其产生多个激光束并且沿相同方向输出多个产生的激光束;以及偏转单元，其使由振荡单元输出的多个激光束中的每一个在不同的方向上沿相同方向偏转。振荡单元包括下包层2，上覆层5，有源层3B，第一光子晶体层41和多个驱动电极E2。偏转单元包括第二光子晶体层43.第一光子晶体层41具有周期性结构，其中不同折射率部分4B的布置周期在对应于多个区域R的区域中是相同的。第二光子晶体层43具有周期性结构，其中对应于多个区域S的每个区域，不同折射率部分4B的布置周期不同。

9. 发明专利

JP2014082261A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2014082261A
公开(公告)日：2014-05-08
申请号：JP2012228045
申请日：2012-10-15
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO , NODA SUSUMU
IPC分类号： H01S5/10 , G02B1/02 , G02B13/00 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser device LD1 comprises an edge-emitting semiconductor laser element 10A and a collimator lens 20. The semiconductor laser element 10A comprises a lower clad layer, an upper clad layer, an active layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer, and emits a plurality of laser beams LB each in a different direction from each of the positions corresponding to a plurality of regions on a light emission end surface LES . The collimator lens 20 has curvatures of a front surface 20a and a rear surface 20b so that an optical path length from each emission position to a front side principal plane on a light emission end surface LES becomes equal, and refracts each of the plurality of laser beams LB emitted from the semiconductor laser element 10A in a plane parallel to a thickness direction of the semiconductor laser element 10A.
摘要翻译：要解决的问题：提供一种能够沿规定方向发射激光并改变其发射方向的半导体激光器件。解决方案：半导体激光器件LD1包括边缘发射半导体激光元件10A和准直透镜20。半导体激光元件10A包括下包层，上包层，有源层，光子晶体层和用于向有源层中的多个区域提供驱动电流的多个驱动电极，并且发射多个激光束LB分别在与发光端面LES上的多个区域对应的位置的不同方向上。准直透镜20具有前表面20a和后表面20b的曲率，使得从发光端面LES上的每个发光位置到前侧主面的光路长度相等，并且折射多个激光在与半导体激光元件10A的厚度方向平行的平面上从半导体激光元件10A发射的光束LB。

10. 发明专利

JP2013120801A Semiconductor laser element and laser beam deflector 有权
标题翻译：半导体激光元件和激光光束偏转器
公开(公告)号：JP2013120801A
公开(公告)日：2013-06-17
申请号：JP2011267186
申请日：2011-12-06
申请人： Kyoto Univ , 国立大学法人京都大学 , Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： NODA SUSUMU , KUROSAKA YOSHITAKA , WATANABE AKIYOSHI , HIROSE KAZUYOSHI , SUGIYAMA TAKAHIRO
IPC分类号： H01S5/50
CPC分类号： H01S5/105 , H01S5/0425 , H01S5/06243 , H01S5/1085 , H01S5/1218 , H01S5/323 , H01S5/34313 , H01S5/4056
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, which emit laser beams only in a single direction and which can change the emission direction.SOLUTION: In a semiconductor laser element, a longer direction of a first drive electrode E2 is inclined with respect to a normal line (Y axis) of a light emission surface LES of the semiconductor laser element. And a region Δ1 of a photonic crystal layer 4 corresponding to a first region R has first and second periodic structures respectively having arrangement periods different from each other, of different refraction factor parts 4B each having refraction factor different from a refraction factor of a surrounding area. More than one laser beam is generated inside the semiconductor laser element, which forms a predetermined angle (δθ) with respect to a longer direction (B direction) of the first drive electrode E2 corresponding to a difference between inverse numbers of the arrangement periods (a1, a2) in the respective first and second periodic structures, when viewed from a thickness direction of the semiconductor laser element. One laser beam among the laser beams is set to be totally reflected at the light emission surface, and the other laser beam is set to have a refracting angle θ3 of less then 90 degrees.
摘要翻译：要解决的问题：提供半导体激光元件和激光束偏转器，其仅在单个方向上发射激光束并且可以改变发射方向。解决方案：在半导体激光元件中，第一驱动电极E2的较长方向相对于半导体激光元件的发光面LES的法线（Y轴）倾斜。并且与第一区域R对应的光子晶体层4的区域Δ1分别具有彼此不同的布置周期的不同折射系数部分4B的折射系数不同于周围区域的折射系数的第一和第二周期结构。在半导体激光元件内产生多于一个的激光束，该激光束相对于第一驱动电极E2的长度方向（B方向）形成与排列周期（a1）的倒数的差对应的预定角度（δθ），a2）在从半导体激光元件的厚度方向观察时在各自的第一和第二周期结构中。将激光束中的一个激光束设定为在发光面全反射，另一方的激光束的折射角度θ3小于90度。版权所有（C）2013，JPO＆INPIT

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