会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPH02199826A
    • 1990-08-08
    • JP1765289
    • 1989-01-30
    • HITACHI LTDHITACHI VLSI ENG
    • SAITO MASAYOSHINISHIDA TAKASHITAKAHASHI TOSHIKAZU
    • H01L23/522H01L21/28H01L21/768
    • PURPOSE:To enhance a heat-resistant by a method wherein, after a nitride of a high-melting- point metal has been formed, a first heat treatment at a comparatively low temperature of a specific temperature or lower is executed before a high-temperature heat treatment at a specific temperature or higher is executed in order to improve a film quality of the nitride of the high-melting-point metal. CONSTITUTION:A p-type silicon substrate 1 in which phosphorus ions have been implanted into a desired region and which has been heat-treated in an atmosphere of N2 is prepared; SiO2 is formed by a vapor growth method; in succession, an insulating film 3 on which phisphosilicate glass containing P2Q5 has been piled is formed. Then, this assembly is heat- treated in the atmosphere of N2; after that, a pattern of a photoresist is formed; a window is opened by making use of this pattern as a mask by a dry etching method. The surface is treated with a diluted-HF-based aqueous solution; after that, a TiN film 4 is vapor-deposited by a DC sputtering method; W is vapor-deposited on it. The laminated W/TiN layers 4, 5 are processed by making use of the photoresist as a mask by a dry etching method; after that, the photoresist is removed. Then, this specimen is heat-treated at 650 deg.C for 30 minutes, and, after that, is heat-treated at 700 deg.C for 30 minutes in the atmosphere of N2. Then, it is heat-treated at 900 deg.C for 30 minutes. Thereby, a reaction of a metal with Si during the high-temperature heat treatments is suppressed by the TiN film; a strain by a stress can be reduced.