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    • 8. 发明专利
    • OSCILLATION CIRCUIT
    • JPH07336196A
    • 1995-12-22
    • JP12516594
    • 1994-06-07
    • HAMAMATSU PHOTONICS KK
    • OKAJIMA KENICHIKYOMASU MIKIO
    • H03K3/0231H03K4/50
    • PURPOSE:To obtain the oscillation output of a large duty rate by intermittently controlling a charging current to a second capacitor by means of a first switch corresponding to the oscillation output of a first relaxation oscillator so as to reduce the average charging current and increase charging time to the second capacitor. CONSTITUTION:In a state where the electric charge of the capacitor C2 is discharged, the voltage of the reverse input of a second differential amplifier 123 is lower than that of not-reverse input so that the output of the amplifier 123 comes into a state L. The charging current from a constant current source circuit QP10 is integrated by the capacitor C2 when the output of the relaxation oscillator 110 is L, but FETM 1 is in an off state at the time of the output of the relaxation oscillator 110 is H so that the electric charge collected at the capacitor C2 is kept being held so as to make the integrated voltage of C2 constant. Consequently, the charging current from the circuit 11 is made to flow intermittently by the output of the oscillator 110 so that the integrated voltage C2, namely the voltage of the not-reverse input of the second amplifier 123, is boosted gradually. The duty rate of the relaxation oscillator 120 is made 1:1000 to 2000 like this.
    • 9. 发明专利
    • JPH05291614A
    • 1993-11-05
    • JP8376992
    • 1992-04-06
    • HAMAMATSU PHOTONICS KK
    • KYOMASU MIKIO
    • H01L31/16
    • PURPOSE:To obtain a title device which outputs only a photocurrent corresponding to the light energy of an incident light spot by connecting a bypass resistance formed of a nondoped silicon layer to every microimpurity layer. CONSTITUTION:A photocurrent generated by light incidence into a photodiode Da (i) is fetched according to frequency characteristics having a cut-off frequency determined by a bias resistance R (i) corresponding to this photodiode Da (i) and a coupling capacitance. Hereupon, when the resistance value of the bias resistance R (i) is small, the coupling capacitance is a very small capacitance value, so that resistance cut-off frequency is very high. However, since the bias resistance is formed of a polysilicon layer, a high resistance can be realized; therefore, even when the coupling capacitance is a very small capacitance value, frequency characteristics having a reduction cut-off frequency optimum to fetch a photocurrent can be set, resulting in an improvement in the precision of photocurrent sensing.