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1. 发明专利

JPH10247757A LIGHT EMITTING MODULE FOR LIGHT COMMUNICATION 失效
公开(公告)号：JPH10247757A
公开(公告)日：1998-09-14
申请号：JP4879997
申请日：1997-03-04
申请人： NIPPON TELEGRAPH & TELEPHONE , HAMAMATSU PHOTONICS KK
发明人： ICHINO HARUHIKO , HIROSE MASAKI , WARASHINA SADAHISA , KYOMASU MIKIO
IPC分类号： G02B6/42 , H01L31/0232 , H01S3/04 , H01S5/00 , H01S5/024 , H01S5/026 , H01S3/18 , H01S3/043
摘要： PROBLEM TO BE SOLVED: To realize a light communication light emitting module which is excellent in heat dissipating properties and capable of operating on a G bit/s band at an ultra-high speed by a method wherein an LD driver IC is mounted direct on a heat sink through the intermediary of no board, and an LD and the LD driver IC are directly connected together with a bonding wire. SOLUTION: An LD 1 is mounted on a sub-mount 2 together with a sub- carrier 6 mounted with a PD 5 and a temperature detecting thermistor 8, and the sub-mount 2 is arranged on a Peltier device 3. On the other hand, an LD driver IC 4 is mounted direct on a heat sink 10. A board 9 is partly cut out so as not to impede the mounting of the LD driver IC 4 and mounted on the heat sink 10. Electrical signals are inputted into the LD driver IC 4 through a wiring pattern 7 on the board 9 and a bonding wire 12 between the board 9 and the LD driver IC 4. Drive signals are transmitted direct from the LD driver IC 4 to the LD 1 through the bonding wire 12.

2. 发明专利

JPH08234059A OPTICAL MODULE DEVICE 失效
公开(公告)号：JPH08234059A
公开(公告)日：1996-09-13
申请号：JP3687395
申请日：1995-02-24
申请人： HAMAMATSU PHOTONICS KK
发明人： WARASHINA SADAHISA , KYOMASU MIKIO
IPC分类号： G02B6/42 , H01L31/02 , H01L33/58 , H01L33/00
摘要： PURPOSE: To provide an optical module device which is suitable for mass production and with which exact axis alignment is possible. CONSTITUTION: A resin molding type case 11 is formed of a resin. The circumference at the end of a base plate 14a of a light emitting and receiving element 14 is adhered to the case 11 by a photosetting resin 16. The bottom of the base plate 14a projected with lead pins 16b is closed by a gelatinous resin 18. Further, a thermosetting resin 19 is laminated on the gelatinous resin 18. The shrinkage strain generated in the thermosetting resin 19 is absorbed in the gelatinous resin 18 and the mounting position of the light emitting and receiving element 14 does not change in spite of the occurrence of such shrinkage strain.

3. 发明专利

JPH0815577A RESIN MOLDED RECEPTACLE AND ITS PRODUCTION 失效
公开(公告)号：JPH0815577A
公开(公告)日：1996-01-19
申请号：JP14983594
申请日：1994-06-30
申请人： HAMAMATSU PHOTONICS KK , KYOCERA CORP
发明人： KYOMASU MIKIO , IKETANI TAKESHI , YASUDA TOSHIMICHI , IKEGAMI SHIN , YAMAGISHI TAKASHI
IPC分类号： G02B6/42
摘要： PURPOSE:To provide a resin molded receptacle which is formed by using a resin, aligns the optical axis of light from an optical semiconductor element and the optical axis of a fiber and prevents fluctuating of a ferrule inserted into a sleeve in an axial direction of this sleeve and a process for producing the same. CONSTITUTION:This resin molded receptacle has the sleeve 30 and a selfoc lens 40 in a case 10 integrally molded of a resin type material. The receptacle has a laser diode 50 in the case 10. An SC connector holding part 20 composed of 20a to 20e is fixed to the outside wall of the case 10. A pinhole member 60 which is formed to an approximate disk shape (toric shape) and is bored with a through-hole penetrating the central axis thereof is installed in the sleeve 30.

4. 发明专利

JPH0811142A COMPOSITE MOLD FOR MOLDING RESIN 失效
公开(公告)号：JPH0811142A
公开(公告)日：1996-01-16
申请号：JP14984494
申请日：1994-06-30
申请人： HAMAMATSU PHOTONICS KK , KYOCERA CORP
发明人： KYOMASU MIKIO , IKETANI TAKESHI , YASUDA TOSHIMICHI , IKEGAMI SHIN , YAMAGISHI TAKASHI
IPC分类号： G02B6/38 , B29C39/02 , B29C39/26 , B29L11/00 , B29L31/36 , G02B6/42
摘要： PURPOSE:To provide a composite mold for molding a resin to produce a resin molded receptacle while enabling the optical axis of the light from an optical semiconductor element to coincide with that of a fiber. CONSTITUTION:A lower mold 310 has an almost rectangular parallelepiped shape and has a plurality of recessed and protruding parts on the upper surface thereof. At first, a square hole 310p having a square plate shape is provided to the central part of the upper surface of the mold and a cylindrical hole 310q is provided centering around the center axis of the square hole 310p. A first column part 310b is formed by providing the cylindrical hole 310q and a second column part 310z having a diameter smaller than that of the first column part 310b is integrally molded on the first column part 310b using the axis of the first column part 310b as a common axis. The second column part 310z has a truncated coneshape structure wherein the diameter of the leading end thereof is smaller than that of the connection part with the first column part 310b being the lower end thereof.

5. 发明专利

JPH07336196A OSCILLATION CIRCUIT 失效
公开(公告)号：JPH07336196A
公开(公告)日：1995-12-22
申请号：JP12516594
申请日：1994-06-07
申请人： HAMAMATSU PHOTONICS KK
发明人： OKAJIMA KENICHI , KYOMASU MIKIO
IPC分类号： H03K3/0231 , H03K4/50
摘要： PURPOSE:To obtain the oscillation output of a large duty rate by intermittently controlling a charging current to a second capacitor by means of a first switch corresponding to the oscillation output of a first relaxation oscillator so as to reduce the average charging current and increase charging time to the second capacitor. CONSTITUTION:In a state where the electric charge of the capacitor C2 is discharged, the voltage of the reverse input of a second differential amplifier 123 is lower than that of not-reverse input so that the output of the amplifier 123 comes into a state L. The charging current from a constant current source circuit QP10 is integrated by the capacitor C2 when the output of the relaxation oscillator 110 is L, but FETM 1 is in an off state at the time of the output of the relaxation oscillator 110 is H so that the electric charge collected at the capacitor C2 is kept being held so as to make the integrated voltage of C2 constant. Consequently, the charging current from the circuit 11 is made to flow intermittently by the output of the oscillator 110 so that the integrated voltage C2, namely the voltage of the not-reverse input of the second amplifier 123, is boosted gradually. The duty rate of the relaxation oscillator 120 is made 1:1000 to 2000 like this.

6. 发明专利

JPH05291614A 失效
公开(公告)号：JPH05291614A
公开(公告)日：1993-11-05
申请号：JP8376992
申请日：1992-04-06
申请人： HAMAMATSU PHOTONICS KK
发明人： KYOMASU MIKIO
IPC分类号： H01L31/16
摘要： PURPOSE:To obtain a title device which outputs only a photocurrent corresponding to the light energy of an incident light spot by connecting a bypass resistance formed of a nondoped silicon layer to every microimpurity layer. CONSTITUTION:A photocurrent generated by light incidence into a photodiode Da (i) is fetched according to frequency characteristics having a cut-off frequency determined by a bias resistance R (i) corresponding to this photodiode Da (i) and a coupling capacitance. Hereupon, when the resistance value of the bias resistance R (i) is small, the coupling capacitance is a very small capacitance value, so that resistance cut-off frequency is very high. However, since the bias resistance is formed of a polysilicon layer, a high resistance can be realized; therefore, even when the coupling capacitance is a very small capacitance value, frequency characteristics having a reduction cut-off frequency optimum to fetch a photocurrent can be set, resulting in an improvement in the precision of photocurrent sensing.

7. 发明专利

JPH0531953B2 失效
公开(公告)号：JPH0531953B2
公开(公告)日：1993-05-13
申请号：JP17676287
申请日：1987-07-15
申请人： HAMAMATSU PHOTONICS KK
发明人： TERADA YOSHITAKA , KYOMASU MIKIO
IPC分类号： G01V8/12

8. 发明专利

JPH0518472B2 失效
公开(公告)号：JPH0518472B2
公开(公告)日：1993-03-12
申请号：JP17979985
申请日：1985-08-15
申请人： HAMAMATSU PHOTONICS KK
发明人： KYOMASU MIKIO
IPC分类号： G01D5/26 , H01L27/14 , H01L31/16

9. 发明专利

JPH04151874A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04151874A
公开(公告)日：1992-05-25
申请号：JP27599990
申请日：1990-10-15
申请人： HAMAMATSU PHOTONICS KK
发明人： KYOMASU MIKIO , SAWARA MASAAKI , NAKAMURA HIROYASU
IPC分类号： H01L31/10 , H01L27/14
摘要： PURPOSE:To realize high speed operation by integrating, in a monolithic manner, electronic function elements like a photodiode and a bipolar transistor on the same substrate. CONSTITUTION:A first epitaxial layer 2 of a lowly doped first conductivity type and a second epitaxial layer 7 of a second conductivity type are formed on a semiconductor substrate 1 of a highly doped first conductivity type; the second epitaxial layer 7 is selectively epitaxially formed via an insulative mask formed so as to surround a specified region; a buried layer 4 is formed by doping the first epitaxial layer 2 in the vicinity of the mask with impurities of a first conductivity type. As a result, a photodiode wherein the second epitaxial layer 7 in the region surrounded by the insulative mask is a cathode or an anode, and the buried layer 4 is an anode or a cathode is constituted. An electronic function element like a bipolar transistor is formed in the second epitaxial layer 7 on the buried layer 4. Thereby high speed operation is enabled.

10. 发明专利

JPH04151872A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04151872A
公开(公告)日：1992-05-25
申请号：JP27599790
申请日：1990-10-15
申请人： HAMAMATSU PHOTONICS KK
发明人： KYOMASU MIKIO , SAWARA MASAAKI , NAKAMURA HIROYASU
IPC分类号： H01L27/14
摘要： PURPOSE:To realize high speed operation by integrating, in a monolithic manner, electronic function elements like a photodiode and a bipolar transistor on the same substrate. CONSTITUTION:A first epitaxial layer 2 of a lowly doped first conductivity type and a second epitaxial layer 7 of a second conductivity type are formed on a semiconductor substrate 1 of a highly doped first conductivity type; the epitaxial layer 7 is subjected to normal mesa etching and eliminated so as to surround a specified region; a buried layer 4 is formed by doping the first epitaxial layer 2 in the vicinity of the etched part with impurities of a first conductivity type. As a result, a photodiode wherein a specified region of the second epitaxial layer 7 left in an island type is a cathode or an anode, and the buried layer 4 is an anode or a cathode is constituted. An electronic function element like a bipolar transistor is formed in the second epitaxial layer 7 on the buried layer 4. Thereby high speed operation is enabled.

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