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    • 2. 发明专利
    • SCANNING ELECTRON MICROSCOPE
    • JPH09134696A
    • 1997-05-20
    • JP29302795
    • 1995-11-10
    • HITACHI LTDHITACHI INSTRUMENTS ENG
    • NAKAGAWA MINEUENO TAKEO
    • H01J37/244
    • PROBLEM TO BE SOLVED: To prevent the degradation of an image quality of a secondary electron image, and prevent the degradation of sensitivity of an X-ray detector when a sample holder to heat a sample at a high temperature is provided. SOLUTION: A light shielding plate 13 to shield the emitted light generated from a heating member 11 and a sample is arranged between a sample holder 14 having the heating member 11, a secondary electron detector 9 and an X-ray detector. A primary electron beam 4 is irradiated to the sample through a small hole 22 of the light shielding plate, and a secondary electron 10 generated from the sample is rolled upward by a magnetic field of an objective lens 8, and is detected by the secondary electron detector 9. On the other hand, since the emitted light 12 generated from the heating member 11 or the sample is not made incident on the secondary electron detector 9 and the X-ray detector by being shielded by the light shielding plate 13, the degradation of a secondary electron image and the degradation of sensitivity of the X-ray detector can be prevented.
    • 3. 发明专利
    • Scanning electron microscope
    • 扫描电子显微镜
    • JP2003045370A
    • 2003-02-14
    • JP2001233767
    • 2001-08-01
    • Hitachi LtdHitachi Sci Syst Ltd株式会社日立サイエンスシステムズ株式会社日立製作所
    • ITO HIROYUKINAKAGAWA MINEKANEOKA NORIYUKI
    • G01N23/207G01N23/225H01J37/20H01J37/21
    • PROBLEM TO BE SOLVED: To provide a scanning microscope enabled to observe and analyze in a focalized state at all times even when a specimen is tilted and rotating against the direction of scanning.
      SOLUTION: The rotational angle θ of a specimen 7 is calculated by a control part 16 depending on arbitrary coordinates (x, y) of two points on one scanning line of an electron beam 4 in the observation/analysis region of the specimen 7, and a focus current variation amount ΔI at every pixels are calculated depending on the rotational angle θ, and a deviation of focus is prevented by superposing the variation amount on a focus current of an object lens 6. A focalized image is easily obtained for the entire observation/analysis region of the specimen 7 even when the specimen is tilted and rotating against the direction of scanning.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供一种扫描显微镜,即使当试样相对于扫描方向倾斜并旋转时,也可以始终在聚焦状态下观察和分析。 解决方案:根据样本7的观察/分析区域中的电子束4的一条扫描线上的两点的任意坐标(x,y),通过控制部分16计算样本7的旋转角度θ, 根据旋转角θ计算每个像素的聚焦电流变化量ΔI,并且通过将变化量叠加在物镜6的聚焦电流上来防止聚焦的偏差。容易获得用于整个观察的聚焦图像 /分析区域,即使样品相对于扫描方向倾斜并旋转。
    • 6. 发明专利
    • HEAVY METL FILM DEPOSITION DEVICE
    • JP2001089855A
    • 2001-04-03
    • JP26497399
    • 1999-09-20
    • HITACHI LTDHITACHI SCIENCE SYSTEMS LTD
    • KASAHARA MARINAKAGAWA MINE
    • C23C16/06C23C16/448
    • PROBLEM TO BE SOLVED: To minimize the pressure (partial pressure) of reaction gas in a state in which the inside of a vacuum vessel is held to a pressure realizing stable discharge in thin film deposition and to retain the amount (partial pressure) of reaction gas in a vacuum vessel to the one equal to or above a fixed value in thick film deposition. SOLUTION: In a state in which the inside of a vacuum vessel is held to the pressure realizing stable discharge, for minimizing the pressure (partial pressure) of reaction gas, before the introduction of reaction gas, inert gas other than reaction gas is introduced to balance the pressure in the vacuum vessel, and after that, reaction gas is introduced. In this way, a film is deposited at a proper film deposition rate, and thin film deposition good in reproducibility is executed. At the time of discharge, for holding the partial pressure of gas components contributing to the reaction in the vacuum vessel to the one equal to or above the fixed value, the amount of the reaction gas is presumed from the amount of the reaction gas. A mechanism for forcedly exhausting the inside of the vacuum vessel, again introducing gas therein and repeatedly executing discharge in the case the film deposition rate reaches the one equal to or below the fixed value (the amount of the reaction gas is made insufficient) is provided, and a relatively thick optional film is deposited.