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    • 3. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPH04106942A
    • 1992-04-08
    • JP22258990
    • 1990-08-27
    • HITACHI LTDAKITA DENSHI KK
    • ISHIZAWA TAMOTSUKUSANAGI YOSHITOMO
    • H01L21/60
    • PURPOSE:To enable excellent pellet bonding and wire bonding as well even when a heat block and a lead frame are under a poor contact state by installing a temperature detection mechanism and comparing the result of its measured temperature with a required proper temperature. CONSTITUTION:When a lead frame 5 is mounted on a head block 1 at a specified position, the heat of a main body of the heat block 1 is transmitted to the frame 5 by a heater 4. During the conduction of heat, an infrared temperature sensor 15 on the frame 5 senses the surface temperature of an inner lead of the frame 5 or a semiconductor pellet 8 or the like. The measured surface temperature is output into a control section 3 where the measured surface temperature is compared with a proper bonding temperature stored and the temperature difference is computed and output to the heater 4, thereby heating the block 1 under control to a desired temperature. This construction makes it possible to obtain excellent bonding even when a bonded material and the heat block are under a poor contact state.
    • 6. 发明专利
    • Semiconductor device, and manufacturing method thereof
    • 半导体器件及其制造方法
    • JP2009218390A
    • 2009-09-24
    • JP2008060797
    • 2008-03-11
    • Elpida Memory IncHitachi Ltdエルピーダメモリ株式会社株式会社日立製作所
    • TANIE HISAFUMIMORIYA HIROSHIANJO ICHIROKUSANAGI YOSHITOMOWATABE MITSUHISA
    • H01L25/04H01L25/18
    • H01L2224/16225H01L2224/73253
    • PROBLEM TO BE SOLVED: To provide a high-reliability and high-density semiconductor device. SOLUTION: Semiconductor packages 3 on lower tiers are directly mounted on a board 1 to be electrically connected thereto, semiconductor packages 2 on upper tiers are mounted on the board 1 through first spacers 4 to be electrically connected to the board, and the semiconductor packages 2 on the upper tiers and the semiconductor packagers 3 on the lower tiers are different in height from a principal surface of the board 1 and alternately arranged on a first principal surface of the board 1 and a second principal surface on the side opposite to the first principal surface without contacting one another. A part of a semiconductor element 7 constituting the semiconductor package 3 on the lower tier is arranged between a semiconductor element 7 constituting the semiconductor package 2 on the upper tier and the board 1, and a part of the first spacer 4 is arranged between the semiconductor element 7 constituting the semiconductor package 3 on the lower tier and the board 1. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供高可靠性和高密度的半导体器件。 解决方案:下层的半导体封装3直接安装在板1上以与其电连接,上层的半导体封装2通过第一间隔件4安装在板1上,以电连接到板,并且 上层的半导体封装2和下层的半导体封装器3的高度与板1的主表面高度不同,并且交替地布置在板1的第一主表面上,并且与第一主表面相反的一侧 第一主表面没有彼此接触。 构成下层的半导体封装3的半导体元件7的一部分配置在构成上层的半导体封装2的半导体元件7和基板1之间,第一间隔物4的一部分配置在半导体 元件7构成下层的半导体封装3和板1.版权所有(C)2009,JPO&INPIT
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS63199452A
    • 1988-08-17
    • JP3146987
    • 1987-02-16
    • HITACHI LTDAKITA DENSHI KK
    • KUSANAGI YOSHITOMONAKAI TAKAFUMI
    • H01L23/28H01L23/50
    • PURPOSE:To improve the electrical reliability of a semiconductor device by forming a support section supporting a bonding wire at an end section on the side, to which the bonding wire is connected, in a lead. CONSTITUTION:Support sections 1A supporting bonding wires 5 are shaped at end sections on the sides, to which the bonding wires 5 are connected, in leads 1 for a semiconductor device. The end section 1A on the bonding wire 5 side is directed upward so that an upper section, the extending direction of the bonding wire 5, is brought near to the surface, on which the bonding wire 5 is connected, in the lead 1 vertically as much as possible, and the end section 1A of the lead 1 functions as the support section for lengthening the shortest distanc (l) between the bonding wire 5 and a semiconductor chip 4 as much as possible. Accordingly, the sag of the bonding wire 5 is prevented, and the distance (l) between the bonding wire and the semiconductor chip 4 is lengthened, thus obviating the short circuit of the semiconductor chip 4 and the bonding wire 5.