专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2539368B2 失效
公开(公告)号：JP2539368B2
公开(公告)日：1996-10-02
申请号：JP28551985
申请日：1985-12-20
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , YOSHIZAWA MISUZU , ONO JUICHI , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/40 , H01S3/18 , H01S3/103

2. 发明专利

JPH04206791A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH04206791A
公开(公告)日：1992-07-28
申请号：JP33711590
申请日：1990-11-30
申请人： HITACHI LTD
发明人： YOSHIZAWA MISUZU , INOUE HIROAKI , TATENO KIMIO , OSHIMA MASAHIRO
IPC分类号： H01S5/00 , H01S3/109 , H01S5/042 , H01S5/06 , H01S5/10
摘要： PURPOSE:To obtain a semiconductor laser device having big secondary harmonics output by guiding secondary harmonics of a fundamental wave through a transparent waveguide path to reflect outward and to specify output of the secondary harminics. CONSTITUTION:A transparent waveguide path 1 is brought sufficiently near an active layer 3 so as to efficiently perform Cherenkov radiation of the secondary harmonics generated in an active layer 3. Then, while being guided in the transparent waveguide path 1 for outwardly reflicting, its output is made not less than 10 to the output of the fundamental wave. Further, one end of the transparent waveguide path 1 is made semiconical having a vertical sngle theta in order to make the Cherenkov-radiated secondary higher harmonics parallel light.

3. 发明专利

JPS6254989A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6254989A
公开(公告)日：1987-03-10
申请号：JP19374085
申请日：1985-09-04
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , KAYANE NAOKI , YOSHIZAWA MISUZU , NAKATSUKA SHINICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/10 , H01S5/343 , H01S5/40
摘要： PURPOSE:To obtain a semiconductor laser having high output with one emitting beam and high reliability by providing different regions of a half number of laser emitting stripes at least one position. CONSTITUTION:An N-type Ga0.5Al0.5As clad layer 2, an undoped Ga0.86Al0.14As active layer 3, a P-type Ga0.5Al0.5As clad layer 4, an N-type GaAs current narrowing layer 5 are sequentially formed by a MOCVD method on an N-type GaAs substrate crystal 1. The layer 5 is completely removed by photoetching step, four groove stripes of 4mum of width for exposing the surface of the layer 4 are formed near both ends of the laser, and two groove stripes are formed at the center of the laser. Then, a P-type Ga0.5Al0.5As clad layer 6, and a P-type GaAs cap layer 7 are formed by MOCVD method, a P-type electrode 8 and an N-type electrode 9 are formed, and a laser element of approx. 300mum of resonator is obtained by a cleaving method. Thus, a phased array laser having low aberration and high output of refractive index waveguide type can be realized.

4. 发明专利

JPH0371686A EDGE TRANSPARENCE TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0371686A
公开(公告)日：1991-03-27
申请号：JP20677989
申请日：1989-08-11
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , YOSHIZAWA MISUZU , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/323
摘要： PURPOSE:To enable the formation of a waveguide and the edge transparency by the same crystal growth process by a method wherein a groove is made to reach to an active layer at an element end, and the active layer is removed. CONSTITUTION:A clad layer 2, a guide layer 3, an active layer 4, a clad layer 5, a P-Al0.3Ga0.7As layer 6, a block layer 7, and an N-P-Al0.2Ga0.8As layer 8 are successively formed on an N-GaAs substrate 1. Then, these layers are etched as far as a halfway point of the N-GaAs block layer 7, and a semiconductor located in an element forming region is removed as far as the active layer 4. The etching concerned can precisely controlled by using an etching solution together. Next, a selective etching is carried out to remove the N-GaAs block layer 7 in a central element region, and moreover a P-Al0.5Ga0.5As layer 9 and a P-GaAs layer 10 are formed again to constitute a laser structure. By this setup, an edge transparence type laser can be formed through a crystal growth process executed only twice in the same process as a self-alignment type laser.

5. 发明专利

JPH02205089A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH02205089A
公开(公告)日：1990-08-14
申请号：JP2383089
申请日：1989-02-03
申请人： HITACHI LTD
发明人： YOSHIZAWA MISUZU , ONO YUICHI
IPC分类号： H01S5/00
摘要： PURPOSE:To prevent fusion of a high light density part at the end face by constituting the crystal at the end face part out of material which is transparent to laser beams. CONSTITUTION:The part in the resonator direction is composed of an end face window area 13 and a laser oscillation area 12. An n-type GaAs substrate crystal 1 is etched so as to form a mesa of Ww in width, Lw in length in resonator direction, and h in height at an end face window area. Next, on this n-type GaAs substrate crystal 1, an n-type Al0.37Ga0.63As first clad layer 2, an n-type Al0.20Ga0.80As light guide layer 3, an n-type Al0.37Ga0.63As second clad layer 4, an Al0.06Ga0.94As active layer 5, a p-type Al0.37Ga0.63As first clad layer 6, and an n-type GaAs current constriction layer 7 are formed in order by MOCVD method. Next, only at a laser oscillation area 12 the n-type GaAs current constriction layer 7 is removed completely, and the groove stripe to expose the surface of the p-type Al0.37Ga0.63As second clad layer 6 is formed.

6. 发明专利

JPH02231780A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH02231780A
公开(公告)日：1990-09-13
申请号：JP5193389
申请日：1989-03-06
申请人： HITACHI LTD
发明人： YOSHIZAWA MISUZU , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a phased array laser stably oscillated at a primary mode by cutting off an N+1st, mode and injecting gains between stripes. CONSTITUTION:A mode in an order higher than the number of stripes N, a not less than N+1st mode, is cut off, and structure in which currents are blocked is formed in stripe regions 12. The width of the stripes is brought to 3mum or less, and currents are injected into the inter-stripe regions 12. Consequently, since the N+1st mode is cut off, the rate of stripe-gain injection is reduced gradually, thus increasing the difference of the threshold gains of a primary mode and the N+1st mode. Accordingly, a phased array semiconductor laser device, which is oscillated at the primary mode and outgoing beams of which are simplified, can be acquired.

7. 发明专利

JPS63208292A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS63208292A
公开(公告)日：1988-08-29
申请号：JP4023587
申请日：1987-02-25
申请人： HITACHI LTD
发明人： YAMASHITA SHIGEO , ONO YUICHI , TANAKA TOSHIAKI , YOSHIZAWA MISUZU , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a semiconductor laser element, which is stably oscillated in a lateral fundamental mode, by making the thickness of a semiconductor clad layer thicker at a light guide part than at the regions on both sides, and providing a semiconductor current constriction layer, which is transparent to laser wavelengths. CONSTITUTION:On a first conductivity type semiconductor substrate 1, at least a first conductivity type first semiconductor clad layer 2, a second semiconductor active layer 3 and a second conductivity type third semiconductor clad layer 4 are provided. The thickness of the third semiconductor clad layer 4 is thicker at a strip shaped light guide part than at the outside of said part. Furthermore, a first conductivity type fourth semiconductor current constriction layer 5 is provided on the third semiconductor clad layer 4 other than a stripe region, whose width is narrower than the strip shaped region. At least a second conductivity type fifth semiconductor embedded layer 7 is further formed on the layer 5. When the fifth semiconductor current constriction layer 7 is constituted with a transparent semiconductor layer, whose refractive index is smaller than that of the semiconductor layer 4 constituting the strip shaped protruding part, a light guiding effect is yielded in the direction parallel to the active layer. Thus stable oscillation occurs in a lateral fundamental mode.

8. 发明专利

JPS6360581A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS6360581A
公开(公告)日：1988-03-16
申请号：JP20367986
申请日：1986-09-01
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , YOSHIZAWA MISUZU , YAMASHITA SHIGEO , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To control the half-value width of outgoing beams, and to enable predetermined half-value width by forming the shape of the end surface of a laser oscillator to a curved surface form and setting the radius of curvature of the end surface of the laser oscillator at a proper value in a phased array semiconductor laser. CONSTITUTION:Outgoing-angle half-value width in the direction parallel with the plane of an active layer is determined by the radius of curvature of a wave front on the end surface of laser beams projected from the end surface and spot size. Since a wave front at the time of outgoing from the end surface takes a convex shape on the convex end surface 1, the spreading angle of outgoing beams is made larger than a diffraction spreading angle. Since a wave front at the time of outgoing from the end surface takes a concave shape in the concave end surface 2, the spreading angle of outgoing beams is made larger than the diffraction spreading angle. Accordingly, the end surface is formed to a curved surface shape, thus broadening outgoing beam half-value width in the direction parallel with the active layer in a phased array semiconductor laser, then acquiring Outgoing beams approximating to a round circle.

9. 发明专利

JPS62285483A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS62285483A
公开(公告)日：1987-12-11
申请号：JP12792086
申请日：1986-06-04
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , YOSHIZAWA MISUZU , KAJIMURA TAKASHI , KONO TOSHIHIRO , SASAKI YOSHIMITSU
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a high output by one outgoing beams while acquiring a laser having high reliability by forming a high reflection film to one part of a laser outgoing end-surface. CONSTITUTION:Normal double hetero-structure is grown on a GaAs substrate, to which five groove stripes are shaped, through a liquid growth method. High reflection films 9 are executed to outgoing end surfaces in second and fourth light-emitting striped regions from the left, and laser lights are not emitted from the regions. Consequently, laser lights, 360 deg. phase of which is conformed, are emitted from first, third and fifth stripes from the left. Accordingly, laser lights are intensified mutually in the direction vertical from the outgoing end surfaces, thus forming outgoing beams to one single peak.

10. 发明专利

JPH02199888A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH02199888A
公开(公告)日：1990-08-08
申请号：JP1760389
申请日：1989-01-30
申请人： HITACHI LTD
发明人： YOSHIZAWA MISUZU , KAJIMURA TAKASHI , NAKAJIMA KEIICHI , KONO TOSHIHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To prevent a driving current from increasing and to extend a life by reducing in thickness an active layer in a civil high output semiconductor laser device, forming a clad layer in a 2-layer structure, and increasing the band gap of a clad layer farther from the active layer larger than that of a clad layer nearer therefrom. CONSTITUTION:An N-type Al0.37Ga0.63As clad layer 2, an N-type Al0.06Ga0.94As active layer 3, a P-type Al0.37Ga0.63As first clad layer 4 and an N-type GaAs current narrowing layer 6 are sequentially formed on an N-type GaAs substrate crystal 1 by a MOCVD method. In this case, the thickness of the active layer 3 is 35-45nm. The center of the current narrowing layer 6 is removed in a stripe state in a hot etching step, and the surface of the clad layer 4 is exposed. Thus, a groove stripe is formed. Then, a P-type second clad layer 7 and a P-type GaAs cap layer 8 are formed by a MOCVD method. Thereafter, after a P-type side electrode 9 and an N-type side electrode 10 are formed, a laser element is obtained by a cleaving method. Thus, an element which can operate for a long period can be obtained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式