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1. 发明专利

JPH0495963A PATTERN FORMING METHOD 失效
公开(公告)号：JPH0495963A
公开(公告)日：1992-03-27
申请号：JP20806990
申请日：1990-08-08
申请人： HITACHI LTD
发明人： KANEKO TADAO , SASAKI YOSHIMITSU , SAITO KATSUTOSHI
IPC分类号： G03F7/26 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To eliminate striation and lateral wrinkles due to stationary waves by heat treating the upper resist of a mask 3-layer structure at high temperature after forming a pattern. CONSTITUTION:The photosensitive resin composition is formed by laminating on a semiconductor substrate 1 a first organic layer 2 and an interlayer 3, and further, on this layer 3 the upper resist layer 4, then, forming a pattern on this resist 4, at that time the striation 5 and the lateral wrinkles 6 appear due to the stationary waves, but they are eliminated by the heat treatment at 170 deg.C for 20 minimum, thus permitting the striation occurring at the edges of the pattern and the laminate form of the lateral wrinkles due to the stationary waves to be eliminated.

2. 发明专利

JPH02929A WAVEGUIDE TYPE OPTICAL ELEMENT 失效
公开(公告)号：JPH02929A
公开(公告)日：1990-01-05
申请号：JP13932488
申请日：1988-06-08
申请人： HITACHI LTD , HITACHI CABLE
发明人： ISHIDA KOJI , INOUE HIROAKI , SASAKI YOSHIMITSU , KASHIMURA SEIICHI
IPC分类号： G02F1/313 , H01L27/14 , H01L31/10
摘要： PURPOSE:To obtain the optical element for an optical exchange which can be driven only through an optical transmission line by providing a function for detecting a control signal for optical switch driving which is sent to an optical switch as a light signal. CONSTITUTION:The part light signal detection part 4 of an entrance opening 1 forms a p-n junction 12 by diffusing or ion-implanting p type impurities in part of an optical waveguide 11 formed on an n type substrate 13. A load resistance 21 and a bias power source 22 for opposite-direction voltage application are connected to this p-n junction 12 and when signal light is incident, part of the signal light is absorbed by the junction area to cause a current to flow an external circuit. This current is detected by the load resistance 21 to detect the incident light. Consequently, the control signal which switches an optical path can be detected with this incident light signal, so an electric signal for switching the signal is not necessary and the optical exchange system which can be driven only through the optical transmission line can be constituted.

3. 发明专利

JPS63318165A HETEROJUNCTION SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63318165A
公开(公告)日：1988-12-27
申请号：JP15328787
申请日：1987-06-22
申请人： HITACHI LTD
发明人： YAMANE MASAO , MISHIMA TOMOYOSHI , SASAKI YOSHIMITSU , KOBAYASHI MASAYOSHI , USAGAWA TOSHIYUKI , TAKAHASHI SUSUMU
IPC分类号： H01L29/205 , H01L21/338 , H01L29/778 , H01L29/80 , H01L29/812
摘要： PURPOSE:To protect a gate electrode from disconnection by a method wherein a buffer layer is formed thin on a mesa step section and, on one of its surfaces, an AlGaAs/GaAs superlattice layer or an etching stopper layer is provided. CONSTITUTION:A buffer layer 4 built for example of undoped GaAs on a mesa step section is formed thin and, on one of its surfaces, an etching stopper layer 3 is built of an AlGaAs/GaAs superlattice layer or a simple AlGaAs layer, which reduces the quantity to be removed by etching from the buffer layer 4. With the device being designed as such, the AlGaAs in the superlattice layer or the simple AlGaAs layer serves as a stopper layer in a process of dry-etching a GaAs layer 8 for the formation of a gate recess, preventing the formation of a great difference in the mesa step section and protecting a gate electrode 10 from disconnection.

4. 发明专利

JPS61258488A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61258488A
公开(公告)日：1986-11-15
申请号：JP9955685
申请日：1985-05-13
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , KAYANE NAOKI , KAJIMURA TAKASHI , FUKUZAWA TADASHI , SASAKI YOSHIMITSU
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a semiconductor laser having low aberration of laser light, low noise and high reliability, by providing at least a pair of layered dielectric films each of which has a specific refractive index, on each of two reflecting surfaces constituting an optical resonator. CONSTITUTION:An N-type Ga0.55Al0.45As clad layer 4 and a P-type GaAs cap layer 3 are provided on an N-type GaAs substrate 7, sequentially in that order, and a P-side electrode 8 and an N-side electrode 9 are formed. SiO2 is then provided on both the reflecting surfaces as first dielectric films. Amorphous Si films are formed thereon as second dielectric films. A quantum well layer is formed in stripes for transverse mode control in which five layers of Ga0.9 Al0.1As 5b and six layers of Ga0.7Al0.3As are layered alternately. The end faces on which the dielectric films are adhered have a reflectivity of about 40-85% as determined by a material used, producing conditions and thicknesses of the films. When the reflectivity is 50% or more, it has an effect of decreasing noise. According to this method, a semiconductor laser having low aberration of laser light, low noise and high reliability can be obtained.

5. 发明专利

JPS5933641A Information pickup device using semiconductor laser 失效
标题翻译：使用半导体激光器的信息拾取器件
公开(公告)号：JPS5933641A
公开(公告)日：1984-02-23
申请号：JP13274683
申请日：1983-07-22
申请人： Hitachi Ltd
发明人： AIKI KUNIO , SASAKI YOSHIMITSU , SUGIYAMA TOSHIO , MAEDA TAKESHI , OSHIMA MASAHIRO
IPC分类号： G11B7/125 , G11B7/12 , H01S5/00
CPC分类号： G11B7/123
摘要： PURPOSE:To improve the optical coupling efficiency of reproducing laser light and to ensure the stable reproduction of information, by setting both the light emitting end face of a semiconductor laser and the photodetecting surface of a photodetecting element in a container staring them so that they are put on a straight line to the light transmitting window of the container. CONSTITUTION:A light transmitting window 9, the light emitting end face of a semiconductor laser 1 and the photodetecting surface of a photodetecting element 2 are set in a container so that they are approximately put on a straight line along an axial line passing through the center of a support ring. The laser light radiated from a light transmitting part is irradiated on the surface 3 of an optical disk, and the information recorded on the surface 3 is reproduced by means of the reflected light given from the surface 3. Thus the reproducing laser light is extracted from the upper surface of the container with use of a single light emitting part. This extracted laser light is fitted to a cylinder which supports optical systems 4 and 4' that lead the laser light to the surface 3. This device facilitates coupling of laser light as well as position matching of optical axes. As a result, the optical coupling efficiency is improved for the reproducing laser light.
摘要翻译：目的：为了提高再现激光的光耦合效率并确保信息的稳定再现，通过将半导体激光器的发光端面和受光元件的光检测面两者设置在容器中，使其成为放在容器的透光窗口的直线上。构成：将透光窗9，半导体激光器1的发光端面和受光元件2的受光面设置在容器中，使其大致沿着穿过中心的轴线放置在直线上的支撑环。从光传输部分照射的激光照射在光盘的表面3上，并且通过从表面3给出的反射光再现记录在表面3上的信息。因此，再现激光从使用单个发光部分的容器的上表面。该提取的激光被装配到支撑将激光导向表面3的光学系统4和4'的圆柱体。该装置有助于激光的耦合以及光轴的位置匹配。结果，再现激光的光耦合效率得到改善。

6. 发明专利

JPS58125832A PASSIVATION METHOD FOR 3-5 GROUP COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS58125832A
公开(公告)日：1983-07-27
申请号：JP759382
申请日：1982-01-22
申请人： HITACHI LTD
发明人： ADAKA SABUROU , OOUCHI HIROBUMI , AIKI KUNIO , SASAKI YOSHIMITSU
IPC分类号： H01L21/31 , H01L21/314 , H01L31/04 , H01L33/02 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/028
摘要： PURPOSE:To impove the characteristics of a device, to lengthen its life and to ameliorate its reliability by turning the surface of the III-V group compound semiconductor into passivity by sputtering-etching the surface in N2. CONSTITUTION:With the III-V group compound semiconductor, it is a compound consisting of two elements or more and reacts with O2 in atmospheric air, there is an unstable natural oxide film on the surface, and the excellent characteristics and reliability of an element are impeded. The natural oxide film is removed through sputtering etching in N2, in which damage due to sputtering is difficult to be generated, without using an inert gas such as Ar while divergence from the stoichiometrical theory of the surface is avoided. That is, a dangling bond generated due to divergence is reacted with N, and the generation of the dangling bond is prevented. Accordingly, the leakage currents of the surface decrease, and the compound semiconductor element having long life and high reliability is obtained. When the semiconductor is sputtering-etched in N2 and the surface is coated with an insulating film made of SiO2, Al2O3, etc., the method is more effective.

7. 发明专利

JPH05167178A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05167178A
公开(公告)日：1993-07-02
申请号：JP33323691
申请日：1991-12-17
申请人： HITACHI LTD
发明人： ONO TOSHIHIRO , KURODA TAKARO , KONO TOSHIHIRO , SASAKI YOSHIMITSU , OKA SATOHIKO
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce irregularity of mesa width, make characteristics in a wafer uniform, and improve yield, by a method wherein, after a two-layered film of Si3N4, and SiO2 having the same width as a mesa stripe is formed, on the upper part of a mesa formed on a semiconductor substrate, the width is narrowed by selectively wet-etching the SiO2, and eaves are formed. CONSTITUTION:On an InP substrate 7, layers 3-6 are epitaxially grown, and thereon a mesa stripe is formed by an ordinary photolithography process. Photo resist 8 is used as a mask, and a two-layered film stripe pattern of Si3N4 and SiO2 is formed by a dry etching method. Next the two-layered film stripe pattern of Si3N4 and SiO2 is used as a mask, a mesa is formed by etching the epitaxial layers. After that, by using etchant like buffer hydrofluoric acid which selectively etches SiO2 only, SiO2 is side-etched, and Si3N4 is turned into eaves. Then a buried layer 9 is formed by an MOCVD method.

8. 发明专利

JPH0590694A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0590694A
公开(公告)日：1993-04-09
申请号：JP9233891
申请日：1991-04-23
申请人： HITACHI LTD
发明人： OKA SATOHIKO , KURODA TAKARO , YAMASHITA SHIGEO , SASAKI YOSHIMITSU , KONO TOSHIHIRO
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042
摘要： PURPOSE:To form a mirror having perpendicularity equal to a cleavage plane and smoothness through etching, and to facilitate the lowering of the threshold and improvement in the integration of a semiconductor laser by forming a pair of end face mirrors in a crystal face {111}. CONSTITUTION:A P-InP layer 2, an InGaAsP active layer 8 and an N-InP layer 10 are crystal-grown successively onto a P-InP substrate 1 having a (1-10) face orientation. The mask stripe of an SiO2 film is formed, and a waveguide mesa is formed along through reactive ion etching. An N-InP buried layer 4 is crystal-grown, and the waveguide mesa and an InP block layer 3 are buried, an SiO2 film 5 is shaped onto the whole surface, a contact hole is bored to the upper section of the waveguide mesa, and an N electrode 6 is formed onto the contact hole. Second etching is conducted by using 1% Br2 methanol, a face {111} is exposed, and mirrors 9a, 9b, both surfaces of which are made perpendicular to the substrate, are formed.

9. 发明专利

JPH04127157A PRODUCTION OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH04127157A
公开(公告)日：1992-04-28
申请号：JP24713290
申请日：1990-09-19
申请人： HITACHI LTD
发明人： KANEKO TADAO , SASAKI YOSHIMITSU , SAITO KATSUTOSHI
IPC分类号： G03F7/26 , G03F7/38 , H01L21/302 , H01L21/3065 , H01S5/00
摘要： PURPOSE:To obtain a mask for dry etching having excellent perpendicularity by subjecting upper resist patterns of a three-layered structure to a high temp. heating treatment after the formation thereof, thereby erasing striation and the laminated cross stripes by the influence of standing waves. CONSTITUTION:A 1st layer photoresist layer 2 is formed on an InP semiconduc tor substrate 1 and is then spin coated with a soln. mixed with orthotitanic acid and is heat treated, by which an intermediate layer 3 is formed. The upper layer photoresist film is therafter formed and is exposed by a reduction stepper to form patterns 4. The striation 5 and the laminated cross stripes 6 generated by the influence of the standing waves are erased by executing the heating treatment for 20 minutes at 170 deg.C. The intermediate layer 3 and the lower layer resist 2 are dry etched in this way, by which the mask for sharp dry etching which is free from the striation at the pattern edges is obtd.

10. 发明专利

JPH03101266A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03101266A
公开(公告)日：1991-04-26
申请号：JP23703689
申请日：1989-09-14
申请人： HITACHI LTD
发明人： KURODA TAKARO , NAKAMURA HITOSHI , UCHIDA YOKO , SASAKI YOSHIMITSU , MIYAZAKI TAKAO
IPC分类号： H01L27/14
摘要： PURPOSE:To eliminate thermal metamorphism of a substrate by forming a number of layers of hetero junctions on a semiinsulating InP substrate in one operation of MBE method and by forming an HEMT and a pin photodiode simultaneously. CONSTITUTION:A HEMT construction which consists of a buffer layer 11, a channel layer 12, a spacer layer 13, and a carrier supply layer 14 is formed on a semiinsulating InP substrate 1 by using MBE method. A pin photodiode structure is formed thereon, which consists of an undoped InGaAs photoabsorbing layer 15/p InAlAs layer 16/a p InGaAs contact layer 17. Then, mesa etching is carried out as far as a semiinsulating InP substrate. As for a pin photodiode A, an N-type ohmic electrode 2 is formed on a two-dimensional electronic gas layer or HEMT and a P-type electrode 4 is formed on the p InGaAs contact layer 17 by vaporization. Then, a source electrode 21 and a drain electrode 22 are formed in a part B of HEMT by AuGe/Ni/Au metal and Al is deposited as a gate electrode 3. In a part of a resistance C, AuGe/Ni/ Au ohmic electrodes 23, 24 are formed. Thereby, a photosensitive OEIC can be manufactured using only a highly reliable simplified process.

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