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1. 发明专利

JP2564334B2 失效
公开(公告)号：JP2564334B2
公开(公告)日：1996-12-18
申请号：JP30313987
申请日：1987-12-02
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , SATO MAKOTO , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S3/18

2. 发明专利

JPH08236861A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH08236861A
公开(公告)日：1996-09-13
申请号：JP2501996
申请日：1996-02-13
申请人： HITACHI LTD
发明人： KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE: To obtain the passivation method of a reflecting surface of semiconductor laser which is excellent in workability and mass-productivity, by forming a dielectric film from the side surfaces of a plurality of semiconductor layers containing an active layer laminated on a semiconductor substrate to the side surface of the semiconductor substrate, and forming a region in which the dielectric film is not formed, on the semiconductor substrate side surface. CONSTITUTION: On the surface of an N-type GaAs substrate 1, a belt type recessed trench is formed, on which an N-type GaAlAs clad layer 3, a GaAlAs active layer 4, a P-type GaAlAs clad layer 5 and an N-type GaAs cap layer 6 are formed. After that, a P side electrode 8 is formed. A photoresist film is used as a mask, and a resonator reflecting surface 11 is formed by a reactive ion beam etching method. The reflecting surface can be formed almost vertically. By using a sputter coating method, SiO2 10 is formed on the whole surface. In this case, SiO2 creeps over the resonator reflecting surface, and a passivation film is formed. A photoresist mask is formed, SiO2 on the P side electrode is eliminated, and an N side electrode is formed.

3. 发明专利

JP2507329B2 失效
公开(公告)号：JP2507329B2
公开(公告)日：1996-06-12
申请号：JP14950886
申请日：1986-06-27
申请人： HITACHI LTD
发明人： SATO MAKOTO , FURUHATA YOSHIO , KAJIMURA TAKASHI , KUBOTA SHIGEO , KATO SHIGEO
IPC分类号： H01L21/20 , C30B21/00 , C30B21/04 , H01L21/324

4. 发明专利

JPH04144181A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04144181A
公开(公告)日：1992-05-18
申请号：JP26643190
申请日：1990-10-05
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain an ultrahigh output semiconductor laser controlled in a lateral mode oscillation by providing a transparent waveguide between a light gain region and a reflecting surface for feeding back a light, and specifying an optical feedback amount to the region by the waveguide. CONSTITUTION:A pattern is chemically etched by using photolithography technique. Since a window region 8 is etched in a reverse mesa state, the sections of a block layer 6, a clad layer 5, and an active layer 4 are exposed in a boundary between the region 8 and the layer 6. The region 8 is etched at the right and left sides by the chemical etching so as to form a transparent waveguide 11, and a position of a self-alignment type waveguide 12 is etched at a region except it. Further, in a region except the window region, Zn is diffused with an SiO2 film as a mask so as to be superposed on the self-alignment type waveguide 12 to form a Zn-diffused region 13.

5. 发明专利

JPH03292787A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH03292787A
公开(公告)日：1991-12-24
申请号：JP9400990
申请日：1990-04-11
申请人： HITACHI LTD
发明人： UCHIDA KENJI , YAMASHITA SHIGEO , NAKATSUKA SHINICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323
摘要： PURPOSE:To prevent a leakage current from occurring in lateral direction in a clad layer outside a ridge stripe region by a method wherein a ridge stripe structure is provided to the surface of a semiconductor laser, and a semiconductor current constriction layer is provided to a region other than the ridge stripe region. CONSTITUTION:A stripe-like dielectric film is formed on the surface of an N-type GaAs substrate 1, and a ridge stripe is formed through etching. Thereafter, a first current constriction layer P-GaAs layer 2 is made to grow through a first organic metal vapor growth method, and an N-GaAs buffer layer 3, an N-Al0.5Ga0.5As clad layer 4, an undoped Al0.1Ga0.9As active layer 5, a P-Al0.5 Ga0.5As clad layer 6, and a P-GaAs cap layer 7 are successively grown in crystal through a second organic metal vapor method. Furthermore, an N-GaAs layer 8 serving as a second current constriction layer is selectively gown through a third organic metal vapor growth method, a stripe-like dielectric film left unremoved is removed, and lastly a P-GaAs buried layer 9 is made to grow in crystal.

6. 发明专利

JPH03109789A OPTICAL ELEMENT 失效
公开(公告)号：JPH03109789A
公开(公告)日：1991-05-09
申请号：JP24628889
申请日：1989-09-25
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , MINAGAWA SHIGEKAZU , KONDO MASAHIKO , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain an optical element of high performance which cannot be obtained by an optical element created on a (100) substrate crystal by using a substrate crystal whose substrate crystal face is tilted by a specific angle toward a direction. CONSTITUTION:A crystal face of a substrate is tilted from a (001) face toward a direction while the tilt angle is 5 to 16 deg. and a shape of stripes is laterally symmetric with respect to a lengthwise direction of a laser resonator. For example when a (511) A substrate is used, this substrate has a substrate crystal face with a (100) face tilted by 15.8 deg. toward a direction of a (111) face. cleavage faces perpendicular to this face are (01-1) and (0-11) faces while other cleavage faces are not perpendicular to it. Thus a pair of crystal faces are most likely to be cleaved while other faces are less likely to be cleaved. There fore, laser devices can be formed by this pair of crystal faces while rectangular chips can be cut out from the remaining cleavage faces. Thus a resultant device exhibits performance more excellent than that formed on the (100) face.

7. 发明专利

JPH0395983A SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH0395983A
公开(公告)日：1991-04-22
申请号：JP23156389
申请日：1989-09-08
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , KAJIMURA TAKASHI , MINAGAWA SHIGEKAZU
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To reduce element resistance than conventional by constituting it out of the first to third light wave guide layers which consists of Al, Ga, In, and P and whose composition ratios are restricted respectively, and forming the third light wave guide layer into the ride stripe shape in the longitudinal direction of a resonator, and setting the refractive index of the third light wave guide layer below the refractive index of a second light wave guide layer. CONSTITUTION:This has a semiconductor substrate, a first light wave guide layer 3, consisting of n-type (AlyGa1-y)0.51In0.49P (0 x), a double hetero junction structure, consisting of an active layer 4 comprised of (AlxGa1-x)0.51In0.49 P (0 x), and a third light wave guide layer, consisting of p-type AlalphaGa1-alphaAs (0.35

8. 发明专利

JPH0371686A EDGE TRANSPARENCE TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0371686A
公开(公告)日：1991-03-27
申请号：JP20677989
申请日：1989-08-11
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , YOSHIZAWA MISUZU , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/323
摘要： PURPOSE:To enable the formation of a waveguide and the edge transparency by the same crystal growth process by a method wherein a groove is made to reach to an active layer at an element end, and the active layer is removed. CONSTITUTION:A clad layer 2, a guide layer 3, an active layer 4, a clad layer 5, a P-Al0.3Ga0.7As layer 6, a block layer 7, and an N-P-Al0.2Ga0.8As layer 8 are successively formed on an N-GaAs substrate 1. Then, these layers are etched as far as a halfway point of the N-GaAs block layer 7, and a semiconductor located in an element forming region is removed as far as the active layer 4. The etching concerned can precisely controlled by using an etching solution together. Next, a selective etching is carried out to remove the N-GaAs block layer 7 in a central element region, and moreover a P-Al0.5Ga0.5As layer 9 and a P-GaAs layer 10 are formed again to constitute a laser structure. By this setup, an edge transparence type laser can be formed through a crystal growth process executed only twice in the same process as a self-alignment type laser.

9. 发明专利

JPH0236073B2 失效
公开(公告)号：JPH0236073B2
公开(公告)日：1990-08-15
申请号：JP11637984
申请日：1984-06-08
申请人： HITACHI LTD
发明人： KURODA TAKARO , KAJIMURA TAKASHI , UMEDA JUNICHI
IPC分类号： H01S5/00 , H01S5/028

10. 发明专利

JPH02181486A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH02181486A
公开(公告)日：1990-07-16
申请号：JP30189
申请日：1989-01-06
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , MINAGAWA SHIGEKAZU , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223
摘要： PURPOSE:To obtain a semiconductor laser element, which makes a laser oscillation possible in a current of a low threshold value and has a transverse mode which is controlled stably even at the time of injection of a high current, by a method wherein a layer having a conductivity type different from that of a specified optical waveguide layer is formed on the specified optical waveguide layer on the upper part of an active layer as a current constricting layer. CONSTITUTION:A P-type AlGaInP optical waveguide layer on the upper part of an active layer is made thin at an extent of 0.1 to 0.5mum and an N-type AlGaAs layer is formed on the upper part of the optical waveguide layer and is used as a current constricting layer. At this time, by adjusting the composition of the AlGaAs layer so that the band gap of the current constricting layer becomes larger than that of the active layer, a waveguide structure having little photo absorption and using a gain distribution is formed. By this gain waveguide structure, the lateral reactive current can be reduced. Therefore, a laser oscillation becomes possible in a current of a low threshold value. Moreover, by optimizing the stripe width of the current constricting layer at an extent of 3 to 6mum, the spread of a current to the lateral direction of the active layer can be made small and the stability in a transverse mode can be improved. Therefore, an oscillation in a longitudinal multimode using a gain waveguide can be expected up to a high output in a kink-free state.

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