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1. 发明专利

JPH05218310A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH05218310A
公开(公告)日：1993-08-27
申请号：JP1920692
申请日：1992-02-04
申请人： HITACHI LTD
发明人： AKITA SHUNSUKE , YAMAGUCHI TAKASHI , TEZUKA IZUMI , TSURUMARU KAZUHIRO , UENO AKIRA
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8222 , H01L27/06
摘要： PURPOSE:To reduce the number of processes while improving the yield and the reliability. CONSTITUTION:A lower electrode and a dielectric film 8 in a MIS capacity C and a plurality of circuit elements are formed respectively. By a first layer wiring, an upper electrode 10U in the MIS capacity C, a connection 11A between the upper electrode 10U and a first pad 12A for test, a connection 11B between the lower electrode (electrode 10L for lead-out) and a second pad 12B for test, and a part of a connection 11 between a plurality of the circuit elements are formed. Then, a predetermined voltage is applied to the pads 12A and 12B for test and an overload is given to the dielectric film 8, and the connections 11A and 11B are unconnected respectively. By a second layer wiring, a connection between the MIS capacity C and a plurality of the circuit elements, and the remaining connections between the circuit elements are formed. Thus, an etching process on the surface of the dielectric film 8 can be eliminated, and the connections 11A and 11B can be formed together with the process.

2. 发明专利

JPS6352452A ELECTRONIC DEVICE 失效
公开(公告)号：JPS6352452A
公开(公告)日：1988-03-05
申请号：JP19543086
申请日：1986-08-22
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： TSURUMARU KAZUHIRO , FURUI TAKAFUMI
IPC分类号： H01L23/29 , H01L21/60 , H01L23/31
摘要： PURPOSE:To prevent the bonding strength of a wire to the electrode of a pellet from decreasing and the resistance value from increasing by covering a bonded part of the pellet to a bonding wire with a high purity resin. CONSTITUTION:Since a bonded part 11 of a copper wire 10 to an aluminum electrode 9 is covered by a protecting part 12 made of high purity resin, the part 11 is not contacted with impurities which cause the copper-aluminum to be corroded to prevent the resistance value from increasing. Here, it is necessary to set the thickness of the part 12 to prevent the impurity 14 in the low purity resin for surrounding the part 12 made of high purity resin in a package 13 from being impregnated to the part 12 to arrive at the bonded part 11 at the center of the part 12.

3. 发明专利

JPS58197865A Resin sealed type semiconductor device 失效
标题翻译：树脂密封型半导体器件
公开(公告)号：JPS58197865A
公开(公告)日：1983-11-17
申请号：JP7997782
申请日：1982-05-14
申请人： Hitachi Ltd
发明人： ISHII SHIGEO , SATONAKA KOUICHIROU , TSURUMARU KAZUHIRO
IPC分类号： H01L21/312 , H01L23/29 , H01L23/31
CPC分类号： H01L23/3192 , H01L23/3135 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To improve moisture resistance and thus form a product of high reliability by a method wherein semiconductor oxide glass is interposed between a semiconductor nitride film formed on the surface of a semiconductor element as the final protection film and a resin body. CONSTITUTION:The adhesion property between the resin sealed body 6 is removed by forming the second phosphorous silicate glass (PSG) film 11 on the surface of the plasma nitride film 10. The second PSG film 11 is coated to the thickness of approx. 0.2mum at approx. 400 deg.C by a CVD (chemical vapor deposition), etc. The resin molded body 6 contacts this second PSG film 11 and surrounds it. As the film covering the surface of the plasma nitride film, an SiO2 glass without content of phosphorus can be adhered instead of PSG. By interposing the thin film of PSG or CVD-SiO2 glass between the plasma nitride film the final passivation and the resin molded body, the adhesion property between the both is enhanced, the exfoliation of the resin molded body between the passivation film is not generated, parts as the sump of water infiltrated through the resin molded body, etc. are eliminated, and accordingly moisture resistance can be improved.
摘要翻译：目的：通过半导体氧化物玻璃插入在作为最终保护膜的半导体元件的表面上形成的半导体氮化物膜和树脂体之间的方法来改善耐湿性，从而形成高可靠性的产品。构成：通过在等离子体氮化膜10的表面上形成第二磷硅酸盐玻璃（PSG）膜11来除去树脂密封体6之间的粘附性。第二PSG膜11被涂覆至约约0.2mum 通过CVD（化学气相沉积）等形成400℃。树脂成型体6与第二PSG膜11接触并包围。作为覆盖等离子体氮化物膜的表面的膜，可以粘附不含磷的SiO 2玻璃而不是PSG。通过在等离子体氮化物膜和最终钝化与树脂成型体之间插入PSG或CVD-SiO 2玻璃薄膜，两者之间的粘附性得到提高，树脂成型体在钝化膜之间的剥离不会产生，消除了通过树脂成型体等渗透的水的部分的部分，因此可以提高耐湿性。

4. 发明专利

JPH0562980A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0562980A
公开(公告)日：1993-03-12
申请号：JP24441691
申请日：1991-08-29
申请人： HITACHI LTD
发明人： TSURUMARU KAZUHIRO , OZAKI HIROSHI , HOSHI AKIRO
IPC分类号： H01L21/56 , H01L21/321 , H01L21/60 , H01L23/12
摘要： PURPOSE:To enable a semiconductor device to be lessened in size and thickness protecting semiconductor pellets. CONSTITUTION:In a semiconductor device 30, electrode pads 34 are formed on pellets 31 in which electronic circuits are built so as to electrically connect the electronic circuits to the outside, bumps 32 electrically and mechanically connected to a mounting board 11 are provided to the electrode pads 34 protruding, and furthermore a protective layer 41 of insulating resin is formed on all the surface of the semiconductor pellet 31 so as to enable the bumps 32 to be exposed.

5. 发明专利

JPS63199436A ELECTRONIC DEVICE 失效
公开(公告)号：JPS63199436A
公开(公告)日：1988-08-17
申请号：JP3145487
申请日：1987-02-16
申请人： HITACHI LTD
发明人： TSURUMARU KAZUHIRO , ARAKI ISAO , HATORI KAZUO
IPC分类号： H01L21/60
摘要： PURPOSE:To improve bondability and the reliability of a bonding connecting section even when a copper wire is used by forming the surface of at least a bonding pad in an electrical wiring for a pellet by employing the same material as the copper group bonding wire. CONSTITUTION:The surface of at least a bonding pad 16 in an electrical wiring 10 for a pellet 8 is shaped by a copper group material, and a wire 17 consisting of the copper group material is bonded onto the surface of the bonding pad 16. The electrical wiring 10 with a lower layer wiring 11 and an upper layer wiring 13 is formed to the upper layer section of the pellet 8, into which an integrated circuit 9 is assembled, through an under-cloth wiring method through an inter-layer insulating film 13, and the wiring 10 is shaped through an evaporation method, etc. by employing the copper group material wholly. One ends of the bonding wires 17 composed of the copper group material are each bonded onto the bonding pad 16 made up of the copper group material in the pellet 8, and the other ends of the wires 17 are each bonded onto a section 5a to be bonded for an inner lead 5.

6. 发明专利

JPS60183749A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60183749A
公开(公告)日：1985-09-19
申请号：JP3855984
申请日：1984-03-02
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： YUGAWA KOUICHI , TSURUMARU KAZUHIRO
IPC分类号： H01L23/50 , H01L23/28 , H01L23/495
摘要： PURPOSE:To obtain a semiconductor device having favorable humidity resistance by a method wherein a lead frame provided with resin layers at least at a part of tab hanging leads and inner leads is used. CONSTITUTION:Polyimide resin layers P are provided, for example, at a part of tab hanging leads 204, 205 and the connecting parts of inner leads 1-44 and wires 103. Accordingly, because water invading routes at the places provided with the polyimide resin layers P are blocked up, invasion of water can be checked, and humidity resistance is enhanced. The polyimide resin P is affixed to the desired parts of the connecting parts between the inner leads 1-44 and the wires 103, and the tab hanging leads 204, 205 according to the potting method, which is the method to drop a small quantity of the resin according to a tool such as a plunger after the wire bonding process to connect between the terminals 201 of a chip 200 and the inner leads 1-44 according to the wires 103 is finished. After then, sealed by epoxy resin of a sealing material to complete a semiconductor device.

7. 发明专利

JPS56150830A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56150830A
公开(公告)日：1981-11-21
申请号：JP5413780
申请日：1980-04-25
申请人： HITACHI LTD
发明人： TSURUMARU KAZUHIRO
IPC分类号： H01L23/29 , H01L21/31 , H01L21/312 , H01L23/31 , H01L23/485
摘要： PURPOSE:To prevent the moisture, infiltrated into the internal section through resin, attaching to the surface of a pad by a method wherein a polyimide resin film is formed on the nitriding film which has been formed on the surface of an element in such manner that at least the polyimide resin film is surrounding the pad. CONSTITUTION:An SiO2 film 17 is formed on the surface of a semiconductor element 10, and at the same time, an Al wiring is formed into a prescribed pattern on the film 17. A bonding pad 18 is formed at a section of said pattern. On the surface of the element which has been formed through said procedures, a phosphor glass film 19 and a nitriding film 20 are formed. These film 19 and 20 are formed on the entire surface of the element 10, but the films are removed at the pad 18 section and a wire 15 is bonded on the exposed surface. On the constitution above- mentioned, a polyimide resin 21 is formed. As a result, such an excellent adhesive property is obtained between a resin 16 and a film 21 that there exists no gap between them. Accordingly, the moisture infiltrated into the internal section through the resin 16 is not gathered in between the resin 16 and the film 21, and also in between the films 20 and 21.

8. 发明专利

JPH07130589A PRODUCTION PROCESS CONTROL METHOD 失效
公开(公告)号：JPH07130589A
公开(公告)日：1995-05-19
申请号：JP30085393
申请日：1993-11-05
申请人： HITACHI LTD
发明人： TSURUMARU KAZUHIRO
IPC分类号： H01L21/66 , H01L21/02
摘要： PURPOSE:To enhance an inspection process in operation efficiency and to improve products in quality and reliability restraining a production process from deteriorating in productivity by a method wherein product groups judged high enough in quality and reliability are subjected to an inspection operation carried out under relaxed conditions in a following inspection process. CONSTITUTION:Some pieces of wafers (usually, 25 pieces) are grouped into a unit lot, and lots are imaginarily classified into a first wafer group 2A lower than an allowable value in yield, a second wafer group 2B above 90% in yield, and a third group 2G above an allowable value but below 90% in yield. The sampling number of wafers is determined for each of the wafer groups 2A, 2B, and 2C in inspection processes. The wafers sampled on the basis of the determined sampling number are subjected to an inspection operation. By this setup, a second wafer group 2B is subjected to an inspection operation carried out under relaxed conditions in a following inspection process, so that an inspection process can be enhanced in operating efficiency.

9. 发明专利

JPH0567664A ELECTROMIGRATION EVALUATION METHOD AND DEVICE 失效
公开(公告)号：JPH0567664A
公开(公告)日：1993-03-19
申请号：JP22689091
申请日：1991-09-06
申请人： HITACHI LTD , HITACHI MICOM SYST KK
发明人： TSURUMARU KAZUHIRO , OZAKI HIROSHI , MAYUZUMI KAHORU
IPC分类号： H01L21/66
摘要： PURPOSE:To prevent an electromigration evaluation method from deteriorating in reliability due to the influence of heat released from an evaluation object wiring, restraining an electromigration evaluation method from deteriorating in workability and a circuit pattern and a production process from changing. CONSTITUTION:In an electromigration test, the temperature of an evaluation object wiring 2 is measured by a temperature sensor 21, and temperature medium is supplied by a supply device 15 basing on the measurement result so as to keep the wiring at a previously set test temperature.

10. 发明专利

JPH0347732B2 失效
公开(公告)号：JPH0347732B2
公开(公告)日：1991-07-22
申请号：JP5413780
申请日：1980-04-25
申请人： HITACHI LTD
发明人： TSURUMARU KAZUHIRO
IPC分类号： H01L23/29 , H01L21/31 , H01L21/312 , H01L23/31 , H01L23/485

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