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1. 发明专利

JPH0735815A PRESSURE COOKER TESTER 失效
公开(公告)号：JPH0735815A
公开(公告)日：1995-02-07
申请号：JP17879793
申请日：1993-07-20
申请人： HITACHI LTD
发明人： AKITA SHUNSUKE
IPC分类号： G01R31/26 , G01R31/30 , H01L21/66
摘要： PURPOSE:To enable carrying-in and-out of a sample without interrupting tests. CONSTITUTION:A preliminary chamber 2 connected to both of a chamber 1 and the outside is arranged and provided with a pressure lid 8 and a valve mechanism 3 for adjusting pressure between it and the chamber 1 and a pressure lid 7 and a valve mechanism 4 for adjusting the pressure between it and the outside while a conveying mechanism 5 is provided to transfer a sample 9 to the chamber 1. The pressure of the preliminary chamber 2 can be adjusted from the same pressure of the chamber 1 to an external pressure by regulating the valve mechanism 3 or 4. The chamber 1 is provided with a pressure lid 6, a pure water 12 for generating a pressure and a heater 11 between it and the outside and a sample base 10 so as to keep the sample from contacting the pure water 12. In addition to these mechanisms, a control panel 13 is provided to check and control condition of the chamber 1, the valve mechanisms 3 and 4 and the pressure lids 7 and 8.

2. 发明专利

JPH05218310A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH05218310A
公开(公告)日：1993-08-27
申请号：JP1920692
申请日：1992-02-04
申请人： HITACHI LTD
发明人： AKITA SHUNSUKE , YAMAGUCHI TAKASHI , TEZUKA IZUMI , TSURUMARU KAZUHIRO , UENO AKIRA
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8222 , H01L27/06
摘要： PURPOSE:To reduce the number of processes while improving the yield and the reliability. CONSTITUTION:A lower electrode and a dielectric film 8 in a MIS capacity C and a plurality of circuit elements are formed respectively. By a first layer wiring, an upper electrode 10U in the MIS capacity C, a connection 11A between the upper electrode 10U and a first pad 12A for test, a connection 11B between the lower electrode (electrode 10L for lead-out) and a second pad 12B for test, and a part of a connection 11 between a plurality of the circuit elements are formed. Then, a predetermined voltage is applied to the pads 12A and 12B for test and an overload is given to the dielectric film 8, and the connections 11A and 11B are unconnected respectively. By a second layer wiring, a connection between the MIS capacity C and a plurality of the circuit elements, and the remaining connections between the circuit elements are formed. Thus, an etching process on the surface of the dielectric film 8 can be eliminated, and the connections 11A and 11B can be formed together with the process.

3. 发明专利

JPH03270261A SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE 失效
公开(公告)号：JPH03270261A
公开(公告)日：1991-12-02
申请号：JP7159990
申请日：1990-03-20
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： UCHIDA HIROMI , AKITA SHUNSUKE , TEZUKA IZUMI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8222 , H01L27/06
摘要： PURPOSE:To enable life of a capacity element to be improved by dividing the capacity element into a plurality of parts and connecting each of the divided capacity elements in parallel. CONSTITUTION:Each of capacity elements C1 and C2 out of capacity elements C1-C8 is constituted with a large capacity value. The capacity element C1 consists of capacity elements C11-C14 which are divided into four parts and similarly the capacity element C2 consists of capacity elements C21-C24 which are divided into four parts. Also, each of the capacity elements C7 and C8 has a medium capacity value, the capacity element C7 consists of capacity elements C71 and C72 which are divided into two parts, the capacity element C8 consists of capacity elements C81 and C82 which are divided into two parts, and they are connected in parallel, thus enabling life of a capacity element C to be improved.

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