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    • 1. 发明专利
    • JPH0468777B2
    • 1992-11-04
    • JP8475887
    • 1987-04-08
    • HITACHI LTD
    • OONUKI HITOSHIKOIZUMI MASAHIROSUZUKI HITOSHIARAKI ISAOOKIKAWA SUSUMU
    • H01L21/60
    • PURPOSE:To make it possible to bond a Cu ball to a reliable IC or LSI by a method wherein the copper ball is deformed in such a way that one of crystal grains on the peripheral part of the copper ball right over the interface of a joint part makes an angle of 30 degrees or less with a semiconductor integrated circuit chip and is bonded to the IC or LSI. CONSTITUTION:In the joint part between a Cu ball and an Al electrode on an Si chip, the Cu ball is deformed in such a way that at least one of crystal grains 2 on the peripheral part of the Cu ball 1 right over the interface of the joint part makes an angle theta of 30 degrees or less with the Si chip and is bonded. After the texture of the Cu ball on the bonding interface of the Cu ball is polished in parallel to the chip, the crystal grains are contrived in such a way that their average crystal grain diameter becomes 15 mum or less. In such a way, when the ball is formed by short-circuit discharge using a Cu wire of a high purity of 99.999 % or more in the mixed inert gas of Ar and H2 gases, the rate of solidification is controlled. Thereby, the texture is controlled and the ball is softened to prevent a failure of bonding.
    • 6. 发明专利
    • ELECTRONIC DEVICE
    • JPS63199436A
    • 1988-08-17
    • JP3145487
    • 1987-02-16
    • HITACHI LTD
    • TSURUMARU KAZUHIROARAKI ISAOHATORI KAZUO
    • H01L21/60
    • PURPOSE:To improve bondability and the reliability of a bonding connecting section even when a copper wire is used by forming the surface of at least a bonding pad in an electrical wiring for a pellet by employing the same material as the copper group bonding wire. CONSTITUTION:The surface of at least a bonding pad 16 in an electrical wiring 10 for a pellet 8 is shaped by a copper group material, and a wire 17 consisting of the copper group material is bonded onto the surface of the bonding pad 16. The electrical wiring 10 with a lower layer wiring 11 and an upper layer wiring 13 is formed to the upper layer section of the pellet 8, into which an integrated circuit 9 is assembled, through an under-cloth wiring method through an inter-layer insulating film 13, and the wiring 10 is shaped through an evaporation method, etc. by employing the copper group material wholly. One ends of the bonding wires 17 composed of the copper group material are each bonded onto the bonding pad 16 made up of the copper group material in the pellet 8, and the other ends of the wires 17 are each bonded onto a section 5a to be bonded for an inner lead 5.
    • 7. 发明专利
    • HIGH INTEGRATION LSI PLASTIC PACKAGE
    • JPS62128159A
    • 1987-06-10
    • JP26712685
    • 1985-11-29
    • HITACHI LTD
    • SASAKI SHIGERUKANEDA AIZONISHI KUNIHIKONAKAMURA ATSUSHIARAKI ISAO
    • H01L23/29H01L23/31H01L23/30
    • PURPOSE:To reduce the damage generating on the IC element such as passivation cracks, interlayer dielectric breakdown and the like while the moldability such as burrs and the like is not sacrificed by a method wherein fillers having grain diameter of 80mum or more which are liable to damage the surface of IC chips are removed, the fillers having the grain diameter of 30-80mum are brought into a globular form, and then 10% or more of the fillers having the grain diameter of 10mum or less are contained therein. CONSTITUTION:The fillers of sealing resin are composed of the grains having the diameter of 80mum or less. Among these fillers, the grains having the diameter of 30mum or more are brought into granular form by performing a treatment. Besides, 10% or more of the total quantity of the fillers having the grain diameter of 10mum or less are contained therein. When the relation between the grain diameter and the shape of the fillers and the compressive force given to IC elements by the fillers is investigated by performing a stress analysis, the compressive stress comes down below the insulating film strength of chips even when the angle of the IC chip part of the fillers comes close to 180 deg., namely, the fillers approximate to globular shape, in the case where grain diameter is 80mum or above. On the other hand, when the grain diameter becomes small to 30mum or thereabout, the value of the compressive stress becomes less than the strength of the insulating film, thereby causing no trouble.
    • 8. 发明专利
    • ADHESIVE TAPE
    • JPS60128631A
    • 1985-07-09
    • JP23614783
    • 1983-12-16
    • HITACHI LTD
    • ARAKI ISAOARAI SHIGERUHAYASHI SHIYOUJIGOUMA TAKESHITAKANAMI TAIJI
    • H01L21/67H01L21/52H01L21/58
    • PURPOSE:To enable to easily and completely identify the presence or not of the residual of an adhesive tape and an adhesive material after the adhesive tape has been exfoliated by a method wherein the adhesive material which is used to stick the adhesive tape to a base material tape is colored in such a manner that the adhesive tape and the base material tape can be identified easily. CONSTITUTION:An adhesive material 8 consists of acryl resin, for example, a crosslinking agent consists of isocyanate resin, and a colorant consists of blue- color pigment with which a base material tape 2 can be identified easily. An adhesive tape 3 is adhered to the back side of the base material tape 2 through the intermediary of the adhesive material 8. At this time, the adhesive tape 3 is formed in the width narrower than that of the base material tape 2, and it is adhered is such a manner that a through hole 1 is closed up, but a hole 7 is not closed up. As a result, the through hole 1 is closed up by the adhesive tape 3 whereon the adhesive material 8 is exposed at the lower part of the through hole 1, and a storing hole 5 is formed. Accordingly, a chip 4 is supplied to and placed in the storing hole 5, and it is adhered and retained by the adhesive material 8 on the bottom of the storing hole.