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1. 发明专利

JP2002030470A ETCHING METHOD AND SYSTEM FOR NON-VOLATILE MATERIAL 失效
公开(公告)号：JP2002030470A
公开(公告)日：2002-01-31
申请号：JP2000217156
申请日：2000-07-18
申请人： HITACHI LTD
发明人： YAGI KATSUJI , TORII ZENZO , YOSHIOKA TAKESHI , SATO TAKASHI , KANAI SABURO
IPC分类号： C23F4/00 , C23F1/00 , G11B5/31 , H01L21/28 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide an etching method by which the material to be etched in which reaction products are non-volatile is etched so that the shape of the side walls after etching can be made vertical. SOLUTION: This etching method comprises a first step in which a non- volatile material film deposited on a substrate is subjected to dry etching treatment for a fixed time by using a reactive gas via a mask formed on the material and a second step in which reaction products adhered on the side wall of the film to be etched and the side wall of the mask material in the first step are cleaned and peeled with a liquid, and heating and drying are performed, and the first step and the second step are repeated at least plural times till the etching depth reaches the target value. By the treating method for the non-volatile material, reaction products inhibitting vertical etching are removed each time, and the material to be etched is exposed, so that the perpendicularity of the shape of the side walls after the etching treatment can be improved.

2. 发明专利

JPH08335571A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH08335571A
公开(公告)日：1996-12-17
申请号：JP1272496
申请日：1996-01-29
申请人： HITACHI LTD
发明人： KAWASAKI YOSHINAO , KAWAHARA HIRONORI , SATO HITOAKI , FUKUYAMA RYOJI , NOJIRI KAZUO , TORII ZENZO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE: To provide an etching treatment apparatus capable of fully preventing the corrosion of a specimen after etching treatment with respect to the specimen comprising laminated metal materials having different ionization tendencies. CONSTITUTION: An etching treatment apparatus comprises etching means 10, ashing means 20, rinsing means 30 and drying means 40 within the apparatus of one unit; and specimens taken out one by one from a cassette are sequentially treated by using each means, and control means for storing the treated specimens in the cassette is also provided.

3. 发明专利

JPH0888215A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0888215A
公开(公告)日：1996-04-02
申请号：JP22313594
申请日：1994-09-19
申请人： HITACHI LTD , TEXAS INSTRUMENTS JAPAN
发明人： TORII ZENZO , HARA KAZUSATO , NISHIMURA MICHIO , MATSUI TAKESHI , HAYAKAWA TAKASHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PURPOSE: To improve the reliability of a wiring layer composed of an aluminum alloy film and at least one TiN film and, at the same time, to improve the yield and throughput of a wiring layer working process. CONSTITUTION: At the time of working the lower and upper TiN films 12 and 14 of a laminated wiring layer composed of the lower TiN film 12, an Al-Si-Cu film 13, and the upper TiN film 14 deposited on a semiconductor substrate 1 by using the ECR dry etching method, the generation of a polymer having a C-N linkage is suppressed by using a patterned photoresist as a mask and a mixed gas of BCl3 and Cl2 containing SF6 gas or of SF6 and BCl3 gas as an etching gas.

4. 发明专利

JPH07169744A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH07169744A
公开(公告)日：1995-07-04
申请号：JP31483893
申请日：1993-12-15
申请人： HITACHI LTD , TEXAS INSTRUMENTS JAPAN
发明人： TORII ZENZO , OHIRA YOSHIKAZU , NISHIMURA MICHIO , MATSUI TAKESHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To provide a dry etching technique by which films of a metal having a high melting point, such as tungsten, etc., can be machined with high dimensional accuracy. CONSTITUTION:At the time of dry-etching a W film 29 deposited on a semiconductor substrate 1 by using an etching gas containing a fluorine gas, the shape of the pattern is controlled by providing a Ti film 28 underneath the film 29 in advance and depositing a TiF layer 31 produced under a low vapor pressure as a result of the reaction between the fluorine and Ti film 28 on the side wall of the pattern.

5. 发明专利

JPH0750288A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0750288A
公开(公告)日：1995-02-21
申请号：JP19326993
申请日：1993-08-04
申请人： HITACHI LTD
发明人： KUROKOME MATSUO , NORITOMI TOYOSHIGE , TORII ZENZO , USUI TAKETO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To restrain corrosion of a metal film or excessive elimination phenomenon of a metal film, an insulating film, etc., and improve resist eliminating efficiency, in the case of ashing process. CONSTITUTION:A metal film formed on a semiconductor wafer is patterned by etching treatment (101). When a resist pattern used as an etching mask is removed by using plasma, a first plasma removal process (102a) which uses mixed gas of O2 gas and CF4 gas as reaction gas, and a second plasma removal process (102b) which uses mixed gas of O2 gas and CH3OH gas as reaction gas are continuously performed.

6. 发明专利

JP2001107272A METHOD AND DEVICE FOR TREATING SAMPLE AND METHOD FOR FABRICATING MAGNETIC HEAD 失效
公开(公告)号：JP2001107272A
公开(公告)日：2001-04-17
申请号：JP28865799
申请日：1999-10-08
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： YOSHIOKA TAKESHI , TORII ZENZO , FUYAMA MORIAKI , OKADA TOSHIHIRO , KANAI SABURO , USUI TAKETO , HARADA HITOSHI
IPC分类号： G11B5/31 , C23F4/00 , G11B5/127
摘要： PROBLEM TO BE SOLVED: To provide a method for treating a sample capable of securing a high etch rate even at a low sample temperature, free from a post-treating stage, e.g. of removing corrosive products and enough only by subjecting the components of chlorine used for plasma and remained to corrosion treatment, to provide a device therefor and to provide a method for fabricating a magnetic head. SOLUTION: A laminated film is deposited from a seed layer of an NiFe alloy, an upper magnetic pole of an NiFe alloy connected thereto, a gap layer of an oxidized film tightly adhered to the seed layer and a shield layer of an NiFe alloy tightly adhered to the gap layer, with the upper magnetic pole as a mask, the seed layer is subjected to plasma treatment and etching working by using a gas system containing chlorine, and, after that, the residual chlorine components are removed by executing removing and drying treatment with a liquid.

7. 发明专利

JPH09237821A SAMPLE TREATING METHOD AND APPARATUS 失效
公开(公告)号：JPH09237821A
公开(公告)日：1997-09-09
申请号：JP5145597
申请日：1997-03-06
申请人： HITACHI LTD
发明人： KAWASAKI YOSHINAO , KAWAHARA HIRONORI , SATO HITOAKI , FUKUYAMA RYOJI , NOJIRI KAZUO , TORII ZENZO
IPC分类号： C23F4/00 , H01L21/027 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent the corrosion of etched samples enough, irrespective of the type of samples, by wet and dry treating the etched samples and removing resist masks and residual corrosion products. SOLUTION: Samples are etched by a treating apparatus 10, utilizing a plasma, etching gas or soln., post-treated at low pressures by a plasma post treating apparatus 20, wet treated by a wet treating apparatus 20 and dry treated by a dry treating apparatus 40. Resist masks and residual corrosion products are removed. Thus, the corrosion products by the etching are removed enough and hence it is possible to enough prevent the etched samples from corrosion if exposed to air, irrespective of the type of the samples.

8. 发明专利

JPH08172073A MANUFACTURING METHOD AND DEVICE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH08172073A
公开(公告)日：1996-07-02
申请号：JP31439394
申请日：1994-12-19
申请人： HITACHI LTD
发明人： TORII ZENZO , OKUDAIRA SADAYUKI , TOKUNAGA TAKAFUMI , OHIRA YOSHIKAZU , HARA KAZUSATO , NEZU HIROKI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PURPOSE: To control plasma with high precision inventing the optimum plasma stabilizing mode by a method wherein the effect of the mutual actions of source plasma and bias plasma on the plasma treatment characteristics is given during a specific plasma treatment step on a main surface of a semiconductor wafer. CONSTITUTION: The microwaves generated in a microwave genegator 101 form, high density microwave plasma (source plasma) in a chamber 104 by mutual action with the magnetic field formed by solenoid coils 105, 106. On the other hand, when a stage 107 is impressed with bias from an RF power supply 107, an RF plasma (bias plasma) is formed above the stage 107. At this time, the objective value of parameter realizing the optimum plasma stabilizing mode are inputted in the computer of an impedance monitor part 112 so that impedance of the microwave plasma and RF plasma, the temperature of stage 107 may be constantly detected to be automatically controlled through a control system 118.

9. 发明专利

JPH04364717A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04364717A
公开(公告)日：1992-12-17
申请号：JP13999091
申请日：1991-06-12
申请人： HITACHI LTD
发明人： SUZUKI MASAYASU , TORII ZENZO , KATO TOKIO , TANIGAKI YUKIO , KAWABUCHI YASUSHI , SAWARA MASASHI , ISHIDA SHINICHI , HARUTA AKIRA
IPC分类号： G03F7/36 , H01L21/027
摘要： PURPOSE:To improve device yield in manufacture of a semiconductor device. CONSTITUTION:In manufacturing a semiconductor device, a photoresist film 4 on wiring 3 is removed by ashing with a gas containing a reductive gas, while reducing the oxide film produced on the wiring 3 by an oxygen plasma. Since the oxide film on the wiring is reduced, only the photoresist film is eventually removed by plasma ashing without oxidizing the wiring 3. Therefore, the photoresist film is almost completely removed.

10. 发明专利

JPH04360535A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH04360535A
公开(公告)日：1992-12-14
申请号：JP13610691
申请日：1991-06-07
申请人： HITACHI LTD
发明人： TORII ZENZO , SAWARA MASASHI , NOJIRI KAZUO
IPC分类号： H01L21/28 , H01L21/3205 , H01L23/52 , H01L27/10 , H01L27/108
摘要： PURPOSE:To improve reliability and yield, and reduce manhour and working time, in the manufacturing method of a semiconductor integrated circuit device. CONSTITUTION:In the manufacturing method of a semiconductor integrated circuit device having a multilayered structure wiring 7, a low reflection film 5 and a conducting film 4 are patterned by using a photo resist film 6 as a mask, said film 6 is eliminated, a base conducting film 3 is patterned by using the conducting film 4 as a mask, and the low reflection film 5 is eliminated. The photo resist film 6 is thinned; the adhesion between the low reflection film 5 and an interlayer insulating film 8 and the bonding strength are improved; the bonder recognition is facilitated; the manhour is reduced; the coverage ratio of the interlayer insulating film 8 is improved; the short and the disconnection of a wiring 12 are prevented; the generation of cracks in the interlayer insulating film 8 is reduced; the imperfect connection of the wirings 12 and 8 is reduced; the step-difference of the interface between the low reflection film 5 and the conducting film 4 is prevented; the corrosion of a wiring 7 is reduced; the short between the wirings 7 and 12 is reduced; the generation of cracks in the interlayer film on the interlayer insulating film 8 is reduced.

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