专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH0982800A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0982800A
公开(公告)日：1997-03-28
申请号：JP23500395
申请日：1995-09-13
申请人： HITACHI LTD , TEXAS INSTRUMENTS JAPAN
发明人： HARA KAZUSATO , TORII ZENZO , OHIRA YOSHIKAZU , MATSUI TAKESHI , HAYAKAWA TAKASHI , OTSUKA MINORU , NISHIMURA MICHIO , TANAKA MICHIO
IPC分类号： H01L21/28 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To improve photolithography accuracy of a wiring consisting of high-melting point metal or the like and to minimize wire resistance by a method wherein a conductor layer, in which the top of the high-melting point metal film is constituted of a conductor film, has a patterning-formed wiring. SOLUTION: This semiconductor integrated circuit device has a first conductor layer 14, in which the top of a high-melting point film is composed of a conductive film 13 having a low reflection coefficient and an insulating film in which a connection hole is formed on the first conductive layer 14 and a second conductive layer 16 connecting to a part of the first conductive layer 14 located at the connection hole. That is to say this semiconductor integrated circuit device is composed of laminated wirings in which the top of the high-melting point is constituted of the conductor film 13 of a low reflective coefficient. As to the conductor film 13 having this low reflection coefficient, a TiN film is used so as to have a low reflection coefficient as compared with a resist film containing an extinction agent used by conventional wiring patterning besides having a higher etching selection ratio to the base high- melting point than an extinction containing resist and a photosensitive than an extinction-containing resist and a photosensitive resist.

2. 发明专利

JPH11238862A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11238862A
公开(公告)日：1999-08-31
申请号：JP31141298
申请日：1998-10-30
申请人： HITACHI LTD
发明人： NAKAMURA YOSHITAKA , AOKI HIDEO , FUKUDA NAOKI , GOSHIMA HIDEKAZU , ASANO ISAMU , KAWAKITA KEIZO , YAMADA SATORU , TAMARU TAKESHI , KOBAYASHI NOBUYOSHI , UMEZAWA TADASHI , OHIRA YOSHIKAZU
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/8242 , H01L23/52 , H01L27/10 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To prevent the transverse etching of a silicide film of a connection part between a bit line and a polycrystalline silicon plug by preventing the unevenness of a polycrystalline silicon plug in a bit line connection hole. SOLUTION: A bit line BL, formed simultaneously with a first layer wiring 18, is made of a laminated film of a titanium film 18a, a titanium nitride film 18b and a tungsten film 18c, and a titanium silicide film 20 containing nitrogen or oxygen is formed in a connection part between the bit line BL and a plug 19. A titanium silicide film 2 containing nitrogen or oxygen may be also formed in a connection part between the first layer wiring 18 and a semiconductor board 1. A tungsten silicide layer containing nitrogen or oxygen, a cobalt silicide layer containing nitrogen or oxygen or a cobalt silicide layer may be formed in place of the titanium silicide film 20.

3. 发明专利

JP2001257226A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001257226A
公开(公告)日：2001-09-21
申请号：JP2000066578
申请日：2000-03-10
申请人： HITACHI LTD
发明人： TORII KATSUHIRO , ASHIHARA YOJI , AOKI HIDEO , OHIRA YOSHIKAZU
IPC分类号： H01L29/40 , H01L21/3205 , H01L21/60 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To enable a lead-out electrode on a semiconductor chip to be improved in reliability and in a adhesion to a bonding material. SOLUTION: A lead-out electrode 2 at least in a bonding region is composed of a Cu wiring 2a which is comparatively thick and buried inside a recessed pattern 4 and a comparatively thin, Al film 2b coating the Cu wiring 2a.

4. 发明专利

JPH1167902A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1167902A
公开(公告)日：1999-03-09
申请号：JP21430597
申请日：1997-08-08
申请人： HITACHI LTD
发明人： OHIRA YOSHIKAZU
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, with which a wiring pattern, provided with a plug consisting of tungsten film, can be patternized in a highly precise manner, and to provide a manufacturing method of the device. SOLUTION: A thin barrier metal film (the first barrier metal film) 10 is formed through-holes 9, and a thick barrier metal film (the second barrier film) 10a, which is thickner than the barrier metal film 10, is formed on an insulating film 8. After the deposition of a tungsten film of a semiconductor substrate 1, the tungsten film on the insulating film 8 is removed using an etch-back method, the surface of a part of the tungsten film embedded in the through-hole and the surface of the insulating film are formed into equally flat surface, and a plug 11a, consisting of the tungsten film embedded in the through-hole 9, is formed. After the removal of the barrier metal film 10a on the insulating film 8, a wiring layer is formed on the semiconductor substrate 1.

5. 发明专利

JPH08172073A MANUFACTURING METHOD AND DEVICE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH08172073A
公开(公告)日：1996-07-02
申请号：JP31439394
申请日：1994-12-19
申请人： HITACHI LTD
发明人： TORII ZENZO , OKUDAIRA SADAYUKI , TOKUNAGA TAKAFUMI , OHIRA YOSHIKAZU , HARA KAZUSATO , NEZU HIROKI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PURPOSE: To control plasma with high precision inventing the optimum plasma stabilizing mode by a method wherein the effect of the mutual actions of source plasma and bias plasma on the plasma treatment characteristics is given during a specific plasma treatment step on a main surface of a semiconductor wafer. CONSTITUTION: The microwaves generated in a microwave genegator 101 form, high density microwave plasma (source plasma) in a chamber 104 by mutual action with the magnetic field formed by solenoid coils 105, 106. On the other hand, when a stage 107 is impressed with bias from an RF power supply 107, an RF plasma (bias plasma) is formed above the stage 107. At this time, the objective value of parameter realizing the optimum plasma stabilizing mode are inputted in the computer of an impedance monitor part 112 so that impedance of the microwave plasma and RF plasma, the temperature of stage 107 may be constantly detected to be automatically controlled through a control system 118.

6. 发明专利

JPH10229082A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH10229082A
公开(公告)日：1998-08-25
申请号：JP2946997
申请日：1997-02-13
申请人： HITACHI LTD
发明人： OHIRA YOSHIKAZU
IPC分类号： H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a technique of forming a fine metal wiring and enlarging the planarizing process margin with a layer insulation film for a semiconductor integrated circuit device having a multilayer wiring. SOLUTION: On a semiconductor substrate 1 main metal 30 and antihalation film cap metal 31 are formed, a resist pattern 32 is formed thereon, the cap metal 31 and main metal 30 are treated, using this pattern as a mask, the resist pattern 32 is removed by a first ashing step, and the semiconductor substrate 1 is treated with a plasma of a Cl or F type gas to remove the cap metal 31 and treated by a wet cleaning and second ashing steps to form a planarized metal wiring of the main metal 30.

7. 发明专利

JPH1056002A ENDPOINT DETECTING METHOD AND ASHING DEVICE 失效
公开(公告)号：JPH1056002A
公开(公告)日：1998-02-24
申请号：JP21071496
申请日：1996-08-09
申请人： HITACHI LTD
发明人： OHIRA YOSHIKAZU , KAJIWARA TATSUMI , TORII ZENZO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent charge-up damage by detecing the endpoint in a highly precise manner even when the condition of treatment changes. SOLUTION: Semiconductor wafers, on which dummy resist is applied, are treated for every prescrived number of sheets, and light-emitting spectral intensity is convertd to a voltage waveform using a sensor 6 and a monitoring part 7. The light-emitting spectral intensity ratio is computed by an arithmetic part 12, the voltage waveform of light-emitting spectral intensity, to be measured and converted when normal ashibng processing is conducted, is amplified by the light-emitting spectral intensity ratio, and the endpoint of ashing processing is detected by a CPU9 based on the amplified voltage waveform.

8. 发明专利

JPH11176932A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11176932A
公开(公告)日：1999-07-02
申请号：JP33830197
申请日：1997-12-09
申请人： HITACHI LTD
发明人： AOKI HIDEO , NAMEKI BUNGO , OHIRA YOSHIKAZU
IPC分类号： H01L21/768
摘要： PROBLEM TO BE SOLVED: To stably connect a conductive plug in a lower layer to a conductive plug in an upper layer, by a method wherein at least specified number of plugs of the conductive plug in the upper layer is just connected to the conductive plug in the lower layer. SOLUTION: Contact holes 11A, 11B, 11C are formed in an interlayer insulation layer 10, and conductive plugs 14A, 14B, 14C are respectively formed in the contact holes 11A, 11B, 11C. Further, contact holes 21A, 21B, 21C are formed in an interlayer insulation layer 20, and conductive plugs 24A, 24B, 24C are respectively formed in the contact holes 21A, 21B, 21C. The conductive plug 14A is just connected to the conductive plug 24A, and further the conductive plug 14B is just connected to the conductive plug 24B. Thus, at least one of the conductive plugs 14A, 14B, 14C is just connected to the conductive plugs 24A, 24B, 24C, whereby formation of an interceding wire is unnecessary. Therefore, the conductive plug in a lower layer can be stably connected to the conductive plug in an upper layer.

9. 发明专利

JPH10154694A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10154694A
公开(公告)日：1998-06-09
申请号：JP31157196
申请日：1996-11-22
申请人： HITACHI LTD , TEXAS INSTRUMENTS JAPAN
发明人： AOKI HIDEO , OHIRA YOSHIKAZU , SEKIGUCHI TOSHIHIRO , KAWAKITA KEIZO , TADAKI YOSHITAKA , MATSUI TAKESHI , OTSUKA MINORU , NISHIMURA MICHIO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065 , H01L21/308 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To improve the yield and reliability of a semiconductor integrated circuit device by reducing the occurrence of short circuits in the wiring of the device after a resist reproducing process. SOLUTION: In a resist reproducing process which is performed for again forming a resist for patterning wiring 3 composed of a lower-layer titanium nitride film 3a, an aluminum film 3b doped with silicon and copper, and an upper-layer titanium nitride film 3c after completely removing the resist when a defect exists in the resist, the defective resist is removed through a resist dissolving and removing process using thinner, a plasma treatment process in which the resist is treated with plasma for

10. 发明专利

JPH1055993A SEMICONDUCTOR ELEMENT MANUFACTURING WASHING LIQUID AND MANUFACTURE OF SEMICONDUCTOR ELEMENT USING IT 失效
公开(公告)号：JPH1055993A
公开(公告)日：1998-02-24
申请号：JP21121796
申请日：1996-08-09
申请人： HITACHI LTD , TEXAS INSTRUMENTS JAPAN , MITSUBISHI GAS CHEMICAL CO
发明人： TORII YOSHIMI , SASABE SHUNJI , KOJIMA MASAYUKI , USUAMI KAZUHISA , TOKUNAGA TAKAFUMI , HARA KAZUSATO , OHIRA YOSHIKAZU , MATSUI TSUYOSHI , GOTOH HIDETO , AOYAMA TETSUO , HASEMI RYUJI , IKEDA HIDETOSHI , ISHIHARA FUKUSABURO , SOTOAKA RYUJI
IPC分类号： C11D7/60 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To easily remove a polymer accumulated at dry etching process without corroding a metal film by using an aqueous solution containing specified quaternary ammonium salt, fluorine-containing compound, water soluble or water-miscible organic solvent, inorganic acid and organic acid. SOLUTION: An aqueous solution, expressed with a formula [(R )3 N-R ] aX (R is an alkyl group of carbon number 1-4, 3R s may be the same or different from one another, and R is an alkyl group of carbon number 1-4 or hydroxy alkyl group. X is inorganic or organic anion, and (a) is valence of the anion.), containing quaternary ammonium slat, fluorine-containing compound such as hydrofluoric acid and ammonium fluoride, water soluble or water- miscible organic solvent, inorganic acid and organic acid, is used. Thereby an accumulated polymer generated at dry etching process is easily removed without corroding a metal film.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式