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1. 发明专利

JP2007158280A Molded semiconductor device and its manufacturing method 审中-公开
标题翻译：模制半导体器件及其制造方法
公开(公告)号：JP2007158280A
公开(公告)日：2007-06-21
申请号：JP2005355539
申请日：2005-12-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： INOUE KOICHI , TANBA AKIHIRO , KAMIMURA NORITAKA , SUZUKI KAZUHIRO
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L21/565 , H01L23/295 , H01L23/3107 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/73265 , H01L2924/13055 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a high-reliability molded semiconductor device and a manufacturing method for such a semiconductor device. SOLUTION: The method reduces any mismatching in the thermal expansion coefficients among module components for a semiconductor element by giving the anisotropy to the thermal expansion coefficient of a molding resin for a molded semiconductor device. In fact, the molded semiconductor device is structured in such a way that a thermal expansion coefficient in a direction parallel to an insulated substrate side of the molding resin may be different from that in a direction perpendicular to an insulated substrate side. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种高可靠性的模制半导体器件和用于这种半导体器件的制造方法。解决方案：该方法通过给予用于模制半导体器件的模制树脂的热膨胀系数的各向异性来减少半导体元件的模块组件之间的热膨胀系数的任何不匹配。事实上，模制半导体器件的结构使得在与模制树脂的绝缘基板侧平行的方向上的热膨胀系数可以与垂直于绝缘基板侧的方向上的热膨胀系数不同。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005259748A Semiconductor device, power converter using the same, power converter three-phase inverter using the same, and hybrid vehicle with the same mounted 有权
标题翻译：半导体器件，使用相同的功率转换器，使用相同功率转换器的三相逆变器，以及具有相同安装的混合动力车
公开(公告)号：JP2005259748A
公开(公告)日：2005-09-22
申请号：JP2004065277
申请日：2004-03-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANBA AKIHIRO , SAITO RYUICHI , ISHIDA KAZUHITO
IPC分类号： H01L23/473 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a compact semiconductor device having a cooling structure capable of efficiently cooling with a limited flow rate of cooling water and pressure loss when at least two sets of power semiconductor modules are to be packaged, a power converter using the device, a power converter three-phase inverter using the device, and a hybrid vehicle with the device mounted. SOLUTION: The semiconductor device includes power semiconductor elements 103, 104, 105 and 106 mounted and has first and second power semiconductor modules 101 and 102 with a metallic base on the bottom. The first and second power semiconductor modules 101 and 102 are mounted on both surfaces of a cooling medium flow path. Current supplied to the first power semiconductor module 101 is larger than that supplied to the second power semiconductor module 102. Heat dissipating ability of a metallic base 107 on the bottom of the first module 101 is larger than that of a metallic base 109 on the bottom of the second module 102. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种具有冷却结构的紧凑型半导体器件，当要封装至少两组功率半导体模块时，能够以有限的冷却水流量和压力损失来有效地冷却，功率转换器使用该装置，使用该装置的功率转换器三相逆变器，以及安装该装置的混合动力车辆。解决方案：半导体器件包括安装的功率半导体元件103,104,105和106，并且具有在底部具有金属基底的第一和第二功率半导体模块101和102。第一和第二功率半导体模块101和102安装在冷却介质流路的两个表面上。提供给第一功率半导体模块101的电流大于提供给第二功率半导体模块102的电流。第一模块101的底部上的金属基底107的散热能力大于底部的金属基底109的散热能力第二模块102。（C）2005，JPO和NCIPI

3. 发明专利

JP2004273479A Power semiconductor module with heat radiating fin 审中-公开
公开(公告)号：JP2004273479A
公开(公告)日：2004-09-30
申请号：JP2003057916
申请日：2003-03-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANBA AKIHIRO , NAKAMURA TAKAYOSHI , SAITO RYUICHI
IPC分类号： H01L23/40 , H01L29/739 , H01L29/78
CPC分类号： H01L2224/48091 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a structure in which liner fins are installed to the metallic base of a power semiconductor, can be manufactured inexpensively, and has a high heat radiating property and high reliability. SOLUTION: A power semiconductor module has a power semiconductor element, an insulating substrate with circuit pattern to which the power semiconductor element is bonded, and a metallic base to which the insulating substrate is bonded. In the module, corrugated fins are formed by bonding metallic sheets which are bent to have recessed and projecting cross sections and are thinner in thickness than the metallic base to an area of the bottom surface of the metallic base under the insulating substrate. The melting point of the brazing material used for bonding the metallic base and corrugated fins to each other is lower than that of the brazing material used for bonding the power semiconductor element to the insulating substrate and the insulating substrate to the metallic base. Consequently, a power semiconductor module in which the fins have low rigidity and the solder under the insulating substrate is not remelted at the time of bonding the fins can be realized. COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2004128099A Water-cooled inverter 审中-公开
公开(公告)号：JP2004128099A
公开(公告)日：2004-04-22
申请号：JP2002288189
申请日：2002-10-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANBA AKIHIRO , NAKAMURA TAKAYOSHI , SAITO RYUICHI
IPC分类号： H01L23/473 , H01L23/40 , H02M7/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter device of direct water cooling where a high voltage part is hardly be wet with water when the cooling water leaks. SOLUTION: The water-cooled inverter comprises supply/discharge pipe for a cooling water, a water channel cover connected to the supply/discharge pipe, a case which covers the inverter, a metal core printed circuit board where a metal foil pattern is bonded to a metal plate through an insulating resin layer, and a package in which a power semiconductor chip is sealed up and a negative electrode of a power semiconductor is exposed on the surface opposite to the power semiconductor. In a power circuit, a rear surface electrode of the power semiconductor package is soldered to the metal foil pattern of the metal core printed circuit board. The bottom surface of the case is covered with the metal core printed circuit board, and the opposite surface of the implemented metal core printed circuit board is covered with the water channel cover for the cooling water to directly touch the rear surface of the metal core printed circuit board. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2002369550A Power converter and movable body therewith 审中-公开
标题翻译：电源转换器和可移动体
公开(公告)号：JP2002369550A
公开(公告)日：2002-12-20
申请号：JP2001174960
申请日：2001-06-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAKATSU KINYA , SASAKI MASAKI , TANBA AKIHIRO , NAKAMURA TAKAYOSHI , SAITO RYUICHI
IPC分类号： B60K6/20 , B60K6/22 , B60L11/14 , H02M1/00 , H02M7/48 , B60K6/02
CPC分类号： Y02T10/7077 , Y02T10/7241
摘要： PROBLEM TO BE SOLVED: To make a power converter compact in size by improving the cooling performance of a power converter. SOLUTION: A resin 22, having thermal conductivity, is embedded with a plurality of electronic components, which are mounted on a control substrate 15 disposed in an inverter case 10 and which of at least two types of electronic parts with the different heating values has a large type, or radiating devices 23 fitted thereon, under a physically no-contact condition with the electronic parts with a small heating value and the control substrate 15, thus thermally transmitting to the inverter case 10 the generated heat of the electronic components with high heating values and thermally transmitted to the resin 22.
摘要翻译：要解决的问题：通过提高功率转换器的冷却性能，使功率转换器小型化。解决方案：具有导热性的树脂22嵌入有多个电子部件，其安装在设置在逆变器壳体10中的控制基板15上，并且具有不同热值的至少两种类型的电子部件中的至少一个具有大型或散热装置23，在物理上不接触的情况下，具有较小的加热值的电子部件和控制基板15，从而热传递到逆变器壳体10，电热元件的发热量高并且热传递到树脂22。

6. 发明专利

JP2002315358A INVERTER DEVICE 失效
公开(公告)号：JP2002315358A
公开(公告)日：2002-10-25
申请号：JP2001117592
申请日：2001-04-17
申请人： HITACHI LTD
发明人： SAITO RYUICHI , TANBA AKIHIRO , NAKAMURA TAKAYOSHI
IPC分类号： H05K7/20 , H01L23/427 , H01L23/473 , H01L25/07 , H01L25/18 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a small-sized, efficient inverter device by adopting a connecting structure where watertightness is ensured and further there is no risk of cracking in an insulation board, to reduce the thermal resistance between a power element and coolant. SOLUTION: In the inverter device, the rear-face electrode plate of the insulation board is larger in size than the insulating board, the peripheral portion of the rear-face electrode plate is jointed with a case, and the flow path of the coolant is formed directly under the insulating board. Furthermore, the front-face electrode plate of the insulating board is constituted, so that the thickness thereof is not less than 0.5 mm or constituted of a heat pipe, and the rear-face electrode is provided with projections and recesses, having a pitch of not more than 3 mm. The rear-face electrode plate and the case are jointed to each other through soldering, adhesive, a mechanical means, or a combination thereof.

7. 发明专利

JP2001085612A MOUNTING STRUCTURE OF COMPLEMENTARY IGBT 失效
公开(公告)号：JP2001085612A
公开(公告)日：2001-03-30
申请号：JP25840399
申请日：1999-09-13
申请人： HITACHI LTD
发明人： TANBA AKIHIRO , YAMADA KAZUJI
IPC分类号： H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To reduce inductance by leading out the emitters of a high side N channel IGBT and a low side P channel IGBT while connecting so that flux shield effect acts sufficiently through copper base. SOLUTION: An insulating module has I/O terminal insulated from a heat dissipating plate, i.e., a copper base 303, and a copper plate 63 is also bonded to an alumina substrate 11A in order to reduce inductance through flux shield effect while dissipating heat as much as possible but it may be eliminated depending on the situation. Sealing is effected by soldering P, N terminals 30, 31 to a copper plate on the alumina substrates 11A, B and bonding U, V, W terminals 32, 33, 34 to a copper post 60. That structure is surrounded by a case 51 insert molded with a control terminal 16 and then the case 51 is sealed with resin 50. Since the inductance of the copper post 60 employed additionally can be neglected, inductance can be reduced furthermore.

8. 发明专利

JPH11204700A POWER MODULE INTEGRATING HEAT RADIATING FIN 失效
公开(公告)号：JPH11204700A
公开(公告)日：1999-07-30
申请号：JP726198
申请日：1998-01-19
申请人： HITACHI LTD
发明人： NAKAMURA TAKAYOSHI , TANBA AKIHIRO , OGAWA TOSHIO , YAMADA KAZUJI
IPC分类号： H01L23/36
摘要： PROBLEM TO BE SOLVED: To reduce and equalize thermal resistance by heat-bonding a power module to a heat radiating fin with insulating resin of high thermal conductivity. SOLUTION: A power semiconductor element 14 is soldered to a metal plate 12 for heat diffusion forming the bottom surface of a power module 20. Moreover, a control terminal 21, extending from the power module 20, is connected to a control circuit loaded on the printed circuit board. Moreover, an external 3-phase input terminal 26 and an external 3-phase output terminal 27 are fixed on the heat radiating fin 10 by the screwing or with bonding agent and are then connected to the power module 20 via bus bar wirings 22, 23, 24, 25. Then the power module 20 is heat-bonded to the heat radiating fin 10 with an insulated resin sheet 11. That bonding condition is set at 5 kgf/cm and for 3 minutes at 151.9 deg.C. This insulating resin sheet 11 is bisphenol A type epoxy resin which includes 71.3 wt.% of alumina filer (α-Al2 O3 ). As a result, thermal resistance can be reduced and equalized.

9. 发明专利

JPH08241967A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08241967A
公开(公告)日：1996-09-17
申请号：JP6398196
申请日：1996-03-21
申请人： HITACHI LTD
发明人： MURATA JUN , MIYAZAWA HIDEYUKI , ASAYAMA MASAICHIRO , TANBA AKIHIRO , NAMETAKE MASATAKE , MIYAZAWA HIROYUKI , KOBAYASHI YUTAKA , SOMEYA TOMOYUKI
IPC分类号： H01L27/06 , H01L21/8222 , H01L21/8242 , H01L21/8248 , H01L21/8249 , H01L27/108
摘要： PURPOSE: To enhance the electrostatic breakdown strength of a hybrid semiconductor integrated circuit device by a method wherein an interconnection is connected to a first semiconductor region for a first MISFET(metal insulator semiconductor field- effect transistor) in a well region and the interconnection is connected to the first semiconductor region for a second MISFET via a second semiconductor region having a deep junction depth. CONSTITUTION: In a hybrid semiconductor integrated circuit device 1, an interconnection 57 is connected, through a connecting hole 55, to an n type semiconductor region 48 and to respective semiconductor regions 45 as a source region and a drain region for a MISFET Qs for memory selection of a DRAM. At this time, the interconnection 57 is connected to the n type semiconductor region 48 for an n-channel MISFET Qn formed on the main face part of a CMOS region CMOS in a p-type well region 35. Then, the interconnection 57 is connected to the n-type semiconductor region 45 for the MISFET Qs, for memory selection, formed on the main face part of a memory cell array MA in the p-type well region 35 in such a way that an n semiconductor region 56 having a deep junction depth as compared with that in the n type semiconductor region 48 is interposed.

10. 发明专利

JPH05128860A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH05128860A
公开(公告)日：1993-05-25
申请号：JP28651991
申请日：1991-10-31
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： YOKOYAMA YUJI , NAKAGAWA KAORU , AKIYAMA NOBORU , TANBA AKIHIRO , OTA TATSUYUKI
IPC分类号： G11C11/409
摘要： PURPOSE:To perform the high speed action of an input buffer circuit by connecting a collector to the power and making an emitter potential into an output digital signal by using a bipolar transistor for the output step of the input buffer circuit. CONSTITUTION:The output step of an input buffer circuit is constituted of bipolar transistors (Tr)Q0 and a P-type FETM0. The collector of the TrQ0 and the source of the FETM0 are connected to a power Vcc. A power IDSO poured into the base of the TrQ0 is decided by a voltage VGSO between the gate sources of the FETM0. Since the VSGO is VGSO=VINO, the gate voltage is not changed by the action of the TrQ0. Therefore, a current IDSO poured into the base of the TrQ0 becomes large and a collector current ICO of the TrQ0 can be enlarged. As the result, the output capacity can be quickly charged, and the output potential can be fast changed from a '0' level to a '1' level. Then, the high speed action of the input buffer circuit is possible.

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