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1. 发明专利

JP2001244805A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001244805A
公开(公告)日：2001-09-07
申请号：JP2001012613
申请日：2001-01-22
申请人： HITACHI LTD
发明人： NAKAGOME YOSHINOBU , ITO KIYOO , TAKEUCHI MIKI
IPC分类号： H01L21/822 , H01L27/04 , H03K19/0185
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which can operate at a low source voltage. SOLUTION: The semiconductor integrated circuit is equipped with a 1st CMOS circuit (INV3) connected to a 1st voltage (VCC-VSS) and outputs a 1st signal having the amplitude of the 1st voltage and a 2nd CMOS circuit (TP6, TP6) which receives the 1st signal at its input node and outputs a 2nd signal having the amplitude of a 2nd voltage; and the threshold voltage of a MOS transistor included in the 2nd CMOS circuit is made lower than the threshold voltage of a MOS transistor included in the 1st CMOS circuit and the 1st voltage in higher than the 2nd voltage.

2. 发明专利

JPH11296196A SOUND ENCODING METHOD AND SOUND ENCODER 失效
公开(公告)号：JPH11296196A
公开(公告)日：1999-10-29
申请号：JP10096198
申请日：1998-04-13
申请人： HITACHI LTD
发明人： SHIMAZAKI YASUHISA , HATANO YUJI , NISHIMOTO JUNICHI , YAMADA KOSHI , TAKEUCHI MIKI , TANIGAWA HIROYUKI , SEKINE HIDETOSHI
IPC分类号： G10L19/04 , H03M7/30 , G10L9/14
摘要： PROBLEM TO BE SOLVED: To reduce power consumption at the time of sound encoding processing by reducing the operation quantity of sound encoding processing, when the sound is encoded by using a code note consisting of the correspondence tables of sound source parameters and codes. SOLUTION: When sound encoding is started, a sound parameter 101d is read out from a code note 101, the sound is reproduced by using a synthesis filter 300, an error from the inputted sound is evaluated by an error evaluation device 301, the evaluated value is compared with a threshold value ε, when the former is smaller than the latter, and a code 101c corresponding to sound source parameters at the time is outputted to the outside. When the evaluated value is larger than the threshold value ε, it is stored in a register 102b, and updated to the minimum successively or all are stored.

3. 发明专利

JPH11232884A NONVOLATILE MEMORY DEVICE 失效
公开(公告)号：JPH11232884A
公开(公告)日：1999-08-27
申请号：JP2747198
申请日：1998-02-09
申请人： HITACHI LTD
发明人： TAKEUCHI MIKI , TANIGAWA HIROYUKI
IPC分类号： G06F12/14 , G06F21/24 , G11C16/02
摘要： PROBLEM TO BE SOLVED: To provide a device having an access limit and which releases the limit only for a prescribed user by utilizing a password stored in a part of plural memory cells for releasing the access limit in a first access permission means and utilizing none of information stored in plural memory cells in a second access permission means. SOLUTION: A password access permission circuit 52 uses the passwords DoP(1)-DoP(s) stored in a password storage area 11 of a nonvolatile memory array 10 and internal write-in signals Di(1)-Di(s) answering to the data DQ(1)-DQ (s) imparted from the outside generated in an input buffer 24 to make signal P2 high level and generates the information DiP(1)-DiP(s) to be rewritten, An X address buffer 30 latches address signals A(1)-A(n) from the outside by a timing signal XL to generate X address signals AX(1)-AX(s).

4. 发明专利

JPH08221978A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH08221978A
公开(公告)日：1996-08-30
申请号：JP2373095
申请日：1995-02-13
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SAKATA TAKESHI , TAKEUCHI MIKI , HORIGUCHI SHINJI , NAKAGOME YOSHINOBU , TANAKA HITOSHI
IPC分类号： G11C11/407
摘要： PURPOSE: To highly accelerate a cycle time by eliminating a useless timing margin when a column selection line is switched. CONSTITUTION: A timing control circuit (YTG) for switching a Y address inputted to a Y decoder (YDEC) asynchronizing with a CLK is provided in addition to the timing control circuit (TG) controlling an input buffer (DIB), an output buffer (DOB), etc., in synchronism with an external clock (CLK). Thus, since the column selection line YS is driven asynchronously, the useless timing margin is eliminated while securing the timing margin when plural address lines are switched simultaneously.

5. 发明专利

JPH08171793A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH08171793A
公开(公告)日：1996-07-02
申请号：JP31629594
申请日：1994-12-20
申请人： HITACHI LTD
发明人： TAKEUCHI MIKI , MATSUNO KATSUMI , KAJITANI KAZUHIKO , NAGASHIMA YASUSHI , HASEGAWA MASATOSHI
IPC分类号： G11C11/22 , G11C14/00 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PURPOSE: To provide a nonvolatile memory with high integration and high reliability using a ferroelectric capacitor. CONSTITUTION: A connection point between a ferroelectric capacitor FC and a paraelectric capacitor PC connected each other in series is made a storage node, and it is operated as a DRAM making an FC side plate Vcc, and making a PC side plate 0V. When power source is turned off, the FC side plate is lowered to 0V instantly. Thus, at a regular operation time, no polarization of a ferroelectric film is inverted even for either storage potential Vcc or 0V, the deterioration in the ferroelectric capacitor at the time of reading out and writing information is reduced. Further, since volatile information as the DRAM is converted to nonvolatile information collectively only by lowering the FC side plate to 0V, the information is held stably even when power source is turned off suddenly.

6. 发明专利

JPH07245558A INPUT CIRCUIT FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07245558A
公开(公告)日：1995-09-19
申请号：JP3330594
申请日：1994-03-03
申请人： HITACHI LTD
发明人： HORIGUCHI SHINJI , ETO JUN , SAKATA TAKESHI , TAKEUCHI MIKI , MATSUNO KATSUMI , AOKI MASAKAZU
IPC分类号： H03K19/0175 , G11C11/407 , G11C11/408 , H03K5/24
摘要： PURPOSE:To attain high speed operation by eliminating the need for a timing margin from fetch of an input signal till a latch output in the input circuit of the semiconductor device such as an address buffer. CONSTITUTION:An address buffer 100 is made up of a differential amplifier 10 receiving an input signal Ai and providing an output of a couple of differential signals AiT, AiB and a survival latch circuit 20 detecting a signal changed earlier in the differential signals and latching and outputting the detected signal. Furthermore, activation/inactivation of the differential amplifier 10 is made depending on ON/OFF of an N channel MOS transistor(TR) M9 based on a Set signal. A voltage is produced between the differential signals when the differential amplifier 10 is activated and both the differential signals go to a low level when the differential amplifier 10 is inactivated.

7. 发明专利

JPH04211515A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04211515A
公开(公告)日：1992-08-03
申请号：JP2984791
申请日：1991-02-25
申请人： HITACHI LTD
发明人： NAKAGOME YOSHINOBU , ITO KIYOO , TAKEUCHI MIKI
IPC分类号： H01L21/822 , G11C11/407 , H01L27/04 , H03K19/0185
摘要： PURPOSE:To provide a semiconductor integrated circuit which operates at high speed even at a low signal amplitude and which does not cause the increase of power consumption at the waiting time. CONSTITUTION:The device consists of a drive circuit (DRV1) converting a signal with large amplitude into a signal with small amplitude and outputting it to a signal line, a signal receiving part (REC2) receiving the signal with small amplitude and converting it to the signal with large amplitude, and a signal processing part (INV1, INV2) processing the signal with large amplitude. Thus, by reducing the voltage amplitude of the signal line, the power consumption of the entire integrated circuit can be reduced.

8. 发明专利

JPS62213153A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS62213153A
公开(公告)日：1987-09-19
申请号：JP5476986
申请日：1986-03-14
申请人： HITACHI LTD
发明人： TAKEUCHI MIKI , TAKEDA EIJI , ITO KIYOO , HORI RYOICHI
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To control currents between electrodes having a wide facing area, and to prevent the interference of signals between memory cells such as solid capacitor cells by specifying the shape of a groove or stipulating the relationship of substrate concentration, a distance between adjacent grooves, etc., in a memory cell using the side wall section of the groove in an Si substrate as an electrode surface for a capacitor. CONSTITUTION:When the conditions of L>W/2 are satisfied in an interval L with a capacitor oppositely faced to a capacitor 1 in (w) width and (d) depth to the capacitor 1, currents between these two capacitors can be controlled by substrate voltage VBB, and currents can be inhibited at an extremely small value by setting VBB within a proper range. Currents between the capacitors can also be reduced exceedingly by the impurity concentration NB of a layer wrapping a groove shaping the capacitor 1 and by setting the interval under predetermined conditions between the capacitor and the adjacent capacitor. Accordingly, informations between the adjacent capacitors do not interfare, thus normally operating a memory cell.

9. 发明专利

JPH1173481A NONCONTACT TYPE IC CARD 失效
公开(公告)号：JPH1173481A
公开(公告)日：1999-03-16
申请号：JP23209397
申请日：1997-08-28
申请人： HITACHI LTD
发明人： TANIGAWA HIROYUKI , TAKEUCHI MIKI
IPC分类号： G11C14/00 , G06K17/00 , G06K19/07 , G11C5/14 , G11C11/22 , G11C16/06 , G11C16/24 , H02J17/00
摘要： PROBLEM TO BE SOLVED: To obtain a memory for a noncontact type IC card which has a long communication distance and low power consumption, and performs excellent low-voltage operation by providing a voltage generating circuit which generates a 1st positive source potential from the positive potential component of an AC signal and a negative source potential from the negative potential component of the AC signal. SOLUTION: The AC signal sent with an electromagnetic wave such as a microwave is received by an LC tuning circuit 110 and demodulated by a modulating and demodulating circuit 130. Further, the received signal is inputted to a voltage generating circuit 120 as AC electric power. The voltage generating circuit 120 rectifies the AC electric power to generates a positive potential V1 and a negative potential V2 at the same time and supplies them as driving electric power to the modulating and demodulating circuit 130, a nonvolatile memory 140, and a microprocessor 150. In this constitution, the voltage generating circuit 120 generates the two positive and negative potentials from the inputted AC signal, so the communication distance (distance between a card-side coil and the coil of a device which reads and writes the card) can be increased.

10. 发明专利

JPH10111896A IC CARD AND ITS PROCESSOR 失效
公开(公告)号：JPH10111896A
公开(公告)日：1998-04-28
申请号：JP26276096
申请日：1996-10-03
申请人： HITACHI LTD
发明人： TAKEUCHI MIKI , TANIGAWA HIROYUKI
IPC分类号： G07F19/00 , G06F15/00 , G06F19/00 , G06F21/31 , G06F21/34 , G06Q20/00 , G06Q20/06 , G06Q20/40 , G06Q20/42 , G06Q40/00 , G06Q40/02 , G06Q50/00 , G07F7/12 , G07G1/12 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To enable electronic commerce of high security by outputting a 2nd password or its processed signal when an input signal to an IC card matches with a 1st password. SOLUTION: A bank system refers to information regarding EM with an electronic money ID and sends unused passwords i.1 or its processed signal f(passowrd i.1) (f(x): arbitrary function) to the EM. When the sent password i.1 matches with a password i.1 stored in the EM, the EM outputs a password i.2 or its processed signal g(password i.2) and sends it to the bank system. This passowrd i.2 operates equally to a password code. The bank system compares and inspects the sent password i.1 with the internal information regarding the EM to determine that it is the EM with the electronic money ID.

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