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    • 5. 发明专利
    • WAFER GRINDING METHOD
    • JPS62162455A
    • 1987-07-18
    • JP13016786
    • 1986-06-06
    • HITACHI LTD
    • TAKAHASHI NOBUAKISATO AKIHIKONAKAMURA SOICHIRO
    • B24B7/07B24B41/06B28D5/00H01L21/304
    • PURPOSE:To enable holding of a wafer by means of a low cost equipment which relieves impact produced during grinding and enables protection of a surface, by a method wherein a wafer is placed on a securing table, made of a porous member, through a flexible film, and is ground as the wafer is absorbed by the porous member. CONSTITUTION:A securing stand 6 is attached to a chuck base bed 8 by means of a screw 7, and a wafer 2, to which flexible film 11 is laminated, is placed on the surface of a porous member 9, e.g., ceramic, sintered metal. Vacuum is drawn through the plural pores of the porous member 9 to absorb and hold the wafer togetherwith the film 11 to grind it by means of a grinding stone 1. In this case, vibration during grinding and an impact force, e.g., beat by grinding grain, are relieved by cushion action of the film 11, and since the film is located between the securing stand 6 and the wafer 2, there is no fear of a surface being damaged during mounting and demounting. The holes of the porous member are easily formed by sintering, a work of high-precisely boring plural holes is eliminated, and equipment is reduced in a cost.
    • 7. 发明专利
    • PROCESSING DEVICE
    • JPS6293922A
    • 1987-04-30
    • JP23322085
    • 1985-10-21
    • HITACHI LTD
    • SATO AKIHIKOFUJITA MASAHIRO
    • H01L21/205H01L21/31
    • PURPOSE:To suppress the adhesion of a non-reaction product in the vicinity of a blow-out hole by a method wherein a rectifying part, widened toward the tip, is pro vided on the edge of a blow-out hole located on the side where sucking force of an exhaust means works intensely, and gas is flowed smoothly in the direction at right angle to the direction of blowing out. CONSTITUTION:The head 11 of the cube, having a recessed part 10 on four side faces, is inserted into an exhaust hood 7, and an exhaust path 9 is formed with the recessed part 10 and the hood 7. A slit-like blow-out hole 12 is provided on the lower surface of the head. Sucking holes 12 are provided in parallel, both ends of them are made even, their longitudinal direction crosses at right angle with the conveying direction of a conveyor 6, and a rectifying part 13 is formed by providing an inclined surface expanding downward on the side where the exhaust of an exhaust path 9 works heavily. Two systems of gas feeding paths 15a and 15b are provided in the head 11, and they are connected to the passages 14a and 14b. The gas blown out from the hole 12 is strongly sucked sidewise by the exhaust path 9, it makes a laminar stream along the rectifying part 13, and no eddy stream is generated on the edge of the blow-out hole 12. Accordingly, non-reaction product is not adhered to or deposited on the circumference of an aperture 12.
    • 8. 发明专利
    • SEMICONDUCTOR MEASURING APPARATUS
    • JPS6252940A
    • 1987-03-07
    • JP19194585
    • 1985-09-02
    • HITACHI LTDHITACHI TOKYO ELECTRONICS
    • KIYOKUNI YOSHIHIKOSATO AKIHIKOSHIGYO YOSHIHARUKATAYAMA JUNICHI
    • H01L21/66G01R31/26
    • PURPOSE:To avoid measurement errors and increase the degree of freedom of the movement of a conductive measuring stage and improve the aptitude for automation by a method wherein a pair of electrodes which touch a semiconductor device and the conductive measuring stage, on which the semiconductor device is placed, from the same side are provided. CONSTITUTION:The tip of one 3 of a pair of electrodes 3 and 11 touches the top surface of a semiconductor device 1 and presses and fixes the semiconductor device 1 on a chip to a measuring stage 2. At the same time, the tip of the other electrode 11 touches the top surface of the conductive measuring stage 2 at the position near the semiconductor device 1. With this arrangement, the power source for measurement is supplied to the top and bottom of the semiconductor device 1 from the pair of electrodes 3 and 11 to carry out the measurement of predetermined items. In an automatic test equipment composed of a plurality of the semiconductor measuring apparatuses, the semiconductor devices 1 are subjected to the respectively different measurement items at the respective measuring stations 101-105 during the rotation of a movable table 12. After all the measurement items are carried out, the device 1 is recovered out of the measuring stage 2 by an unloading apparatus 20.
    • 10. 发明专利
    • SEMICONDUCTOR WAFER REAR-SURFACE POLISHING MACHINE
    • JP2002359218A
    • 2002-12-13
    • JP2001166519
    • 2001-06-01
    • HITACHI LTD
    • SATO AKIHIKOIHAYAZAKA TAKASHITAKAHASHI NOBUAKI
    • H01L21/677H01L21/304H01L21/68
    • PROBLEM TO BE SOLVED: To prevent deterioration in polishing performance, by utilizing self-generating action. SOLUTION: The machine includes a first-axis grinding wheel 15 for grinding a wafer to a coarse finish level in a first chuck table 12, a second-axis grinding wheel 17 for grinding the wafer of a second chuck table 13 to a fine finish level, first and second cassette stages 18 and 20 having cassettes 19 and 21 installed for accommodating plural normal and reproduction wafers Wa and Wb therein respectively, a transfer robot 23 for transferring the wafer, and a controller 24 for controlling the wheels, stages and robot. The controller 24 alternately supplies the normal and reproduction wafers Wa and Wb to the second chuck table 13 to accurate-finish grind the wafers by the second-axis grinding wheel 17. Upon accurate-finish grinding by the second-axis wheel the usual wafer coarse-finish ground by the first-axis wheel, since the second-axis wheel is made autogenous by the normal wafer, the second-axis wheel can be prevented from becoming clogged and reduced in its grinding performance, so that proper accurate-finish grinding can always be secured.