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1. 发明专利

JP2004148465A Method and equipment for percussion machining of workpiece, and semiconductor device machined through them 审中-公开
标题翻译：用于工件加工的方法和设备以及通过它们加工的半导体器件
公开(公告)号：JP2004148465A
公开(公告)日：2004-05-27
申请号：JP2002318209
申请日：2002-10-31
申请人： Hitachi Ltd , Incorporated Educational Institution Meisei , 学校法人明星学苑 , 株式会社日立製作所
发明人： ISHINO MASAKAZU , OTSUKA KANJI
IPC分类号： B26F1/00 , H01L23/52 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To drill small holes through a semiconductor wafer or a chip formed of semiconductor wafers through punching-based machining. SOLUTION: It is arranged that, in a cylinder, a hammer 4 is lowered at a slow speed to collide with a piston 6 with much impact and to apply pressure with much impact onto air-mixed combustion gas previously put into the cylinder through a combustion gas injection valve 7. In this process, the gas passes through a flow rectification channel 8, and at that time, its speed is upgraded as a contraction stress wave of more than d 1 /d 2 times (=0.578 times), with the air carried to a speed acceleration guide 11 through an impedance conforming guide 9. In the speed acceleration guide 11, a punch 10 formed within it progresses while being accelerated by the contraction stress wave, and rams into a wafer 13, which is a workpiece, through the intermediation of a guard rail 12. Under this arrangement, a through-hole is formed through the wafer 13. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过冲孔加工从半导体晶片或由半导体晶片形成的芯片上钻小孔。解决方案：设置在气缸中，锤4以较低的速度下降以与冲击很大的活塞6碰撞，并且将大量冲击施加的压力施加到预先放入气缸中的空气混合燃烧气体通过燃烧气体喷射阀7.在该过程中，气体通过流量整流通道8，此时其速度升高为大于d SB SB的收缩应力波（= 0.578次），通过阻抗一致导向器9将空气运送到加速导向器11.在速度加速导向器11中，形成在其内的冲头10在加速时被加速收缩应力波，并通过保护轨道12进入作为工件的晶片13中。在这种布置下，通过晶片13形成通孔。（C）2004 ，JPO

2. 发明专利

JP2003224462A SIGNAL TRANSMISSION SYSTEM 审中-公开
公开(公告)号：JP2003224462A
公开(公告)日：2003-08-08
申请号：JP2002022708
申请日：2002-01-31
申请人： OTSUKA KANJI , USAMI TAMOTSU , HITACHI LTD , OKI ELECTRIC IND CO LTD , SANYO ELECTRIC CO , SHARP KK , SONY CORP , TOSHIBA CORP , NEC CORP , MATSUSHITA ELECTRIC IND CO LTD , MITSUBISHI ELECTRIC CORP , FUJITSU LTD , ROHM CO LTD
发明人： OTSUKA KANJI , USAMI TAMOTSU
IPC分类号： H01L27/06 , H01L21/8234 , H03K19/0175 , H04L25/02
摘要： PROBLEM TO BE SOLVED: To provide a signal transmission technique for transferring a high- speed digital signal of several tens of GHz band, while meeting the conventional system configuration and component configuration, as much as possible. SOLUTION: In a configuration of a driver 1 and a receiver 2 included in a transistor logic circuit spread over the whole electronic circuit and a memory circuit, a signal transmission system includes the driver 1, which is connected both to the receiver 2 through a signal transmission line 3 and to a power source Vdd through a power source and ground transmission line 4. Both the driver 1 and the receiver 2 are configured, to have substantially differential inputs and substantially differential outputs, and at the output ends of the substantially differential outputs of the driver 1, connection to the power source is not provided nor to the ground. The receiver 2 receives the signal, by detecting a voltage difference between the substantially differential input signals, and further, the signal transmission line 3 has no distribution wiring. COPYRIGHT: (C)2003,JPO

3. 发明专利

JP2003168968A ELECTRONIC DEVICE 审中-公开
公开(公告)号：JP2003168968A
公开(公告)日：2003-06-13
申请号：JP2001369358
申请日：2001-12-03
申请人： OTSUKA KANJI , USAMI TAMOTSU , FUJITSU LTD , OKI ELECTRIC IND CO LTD , SANYO ELECTRIC CO , SHARP KK , SONY CORP , TOSHIBA CORP , NEC CORP , HITACHI LTD , MATSUSHITA ELECTRIC IND CO LTD , MITSUBISHI ELECTRIC CORP , ROHM CO LTD
发明人： OTSUKA KANJI , USAMI TAMOTSU
IPC分类号： H01L23/12 , H01L21/822 , H01L27/04 , H01P1/00 , H01P3/00 , H01P3/08 , H03K19/0175 , H04L25/02
摘要： PROBLEM TO BE SOLVED: To provide an electronic device capable of excellent high speed transmission in a GHz band and in a frequency band above the GHz band. SOLUTION: In an electronic device (11; 10) including a current switch driver (16) including a differential circuit for supplying a current to a transmission line in response to a signal, signal wirings (70, 71) for transmitting the foregoing signal to the differential circuit i9 is constructed in the form of a transmission line. COPYRIGHT: (C)2003,JPO

4. 发明专利

JP2002124635A SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VARACTOR DEVICE 失效
公开(公告)号：JP2002124635A
公开(公告)日：2002-04-26
申请号：JP2000315360
申请日：2000-10-16
申请人： OTSUKA KANJI , USAMI TAMOTSU , MATSUSHITA ELECTRIC IND CO LTD , OKI ELECTRIC IND CO LTD , SANYO ELECTRIC CO , SHARP KK , SONY CORP , TOSHIBA CORP , NEC CORP , HITACHI LTD , FUJITSU LTD , MITSUBISHI ELECTRIC CORP , ROHM CO LTD
发明人： OTSUKA KANJI , USAMI TAMOTSU
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8222 , H01L21/8236 , H01L27/06 , H01L27/088 , H03K19/017
摘要： PROBLEM TO BE SOLVED: To achieve rapid switching of a transistor, by providing a circuit for forcibly pumping up or down necessary charge to a state transition of the transistor. SOLUTION: A line driver 10 of a CMOS configuration for inputting a signal Din and outputting a signal Dout is constituted by a pMOS transistor 11 and an nMOS transistor 12. A pMOS varactor 13 is interposed between a source of the transistor 11 and a power source Vdd, and an nMOS varactor 14 is interposed between a source of the transistor 12 and a ground Vss. Both the varactors 13 and 14 have entirely the same size structure as those of the transistor 11 and the transistor 12 or twice the channel area. An inverted signal XDin of the input signal Din is given to the gates of the varactors 13 and 14.

5. 发明专利

JPH11317473A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11317473A
公开(公告)日：1999-11-16
申请号：JP7513499
申请日：1999-03-19
申请人： HITACHI LTD
发明人： SHIRAI MASAYUKI , OTSUKA KANJI , MIWA TAKASHI , NAKANO TETSUO , KOIDE KAZUO , YAMAGIWA AKIRA , OBA TAKAO , HATADA TOSHIO , MATSUSHIMA HITOSHI , MIYAZAKI KUNIO
IPC分类号： H01L23/12 , H01L23/34
摘要： PROBLEM TO BE SOLVED: To prevent mismatchings caused by the difference in the expansion coefficient of a materials for constituting a package by forming an area between a semiconductor chip and a cooling part and the entire surface of the semiconductor chip in a structure which is covered with a specific soft material. SOLUTION: Since a chip 1 and a wiring layer are connected by a soft material, such as elastomers 3, 5 and 8 for connecting members, a bonding wire 7 in a loop is used for absorbing the displacement of each rigid body. Also, since epoxy potting with strong stiffness cannot be used due to the similar reasons for sealing, recently potting is made by using silicon gel that has been highly regarded as a reliable sealing material as a coating gel 11. Also, for soft material, namely the elastomers 3, 5, and 8 and the coating gel 11, a materials with an coefficient of elasticity of 0.001-100 kg/mm , preferably 0.01-10 kg/mm , is used.

6. 发明专利

JPH08227903A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08227903A
公开(公告)日：1996-09-03
申请号：JP34237495
申请日：1995-12-28
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , TATE HIROSHI , OZAKI HIROSHI , OTSUKA KANJI , FURUKAWA MICHIAKI , YAMAZAKI YASUYUKI
IPC分类号： H01L21/52 , H01L21/56 , H01L21/60 , H01L23/50
摘要： PURPOSE: To enhance the bonding strength between the resin of a package and the lead even for a semiconductor device mounting a large pellet by providing a first lead traversing one side of a semiconductor pellet toward a bonding pad, and a second lead traversing the extension of one side and facing the bonding pad. CONSTITUTION: Outer leads are arranged on the side of a pellet where the bonding pad is not arranged and the inner leads of the leads 2a are extended along the major surface of the pellet 1 where the circuit is not formed. The forward end 2b thereof is extended over the side of the pellet where bonding pads 7 are arranged. Since the inner lead of the lead 2a is very long, bonding strength can be enhanced significantly between the lead and the package resin 4. Furthermore, even when a large pellet is mounted, delamination can be prevented effectively at the interface of lead when the outer lead is bent, for example.

7. 发明专利

JPH088301A LSI MOUNTING RESIN FOR DISPLAY ELEMENT AND MOUNTING STRUCTURE 失效
公开(公告)号：JPH088301A
公开(公告)日：1996-01-12
申请号：JP14479595
申请日：1995-06-12
申请人： HITACHI LTD
发明人： NAKANO FUMIO , AMAGI SHIGEO , SOGA TASAO , OTSUKA KANJI
IPC分类号： H01L21/60 , H01L21/56 , H01L23/29 , H01L23/31
摘要： PURPOSE:To reduce thermal stress applied to fine wiring formed on an LSI chip by setting the Young's modulus under normal temperature and the coefficient of thermal expansion of a resin within specified ranges thereby protecting a solder joint against thermal fatigue rupture. CONSTITUTION:An LSI chip 2 having a basic structure and provided with solder bumps 3 for electric connection with a board 5 is mounted on the board 5 and connected therewith. The gap around the solder bump 5 is then filled with resin 4 to obtain a protected structure to mount the LSI. The filling resin 4 has an elastic modulus as low as possible and a coefficient of thermal expansion close to that of the solder. In other words, the resin 4 has Young's modulus under normal temperature in the range of 5-1000kgf/mm and coefficient of thermal expansion in the range of 18-40X10 / deg.C This structure can protect multilayer wiring of thin aluminum film formed on the surface of the LSI chip and vnlnerable to thermal stress against breakage thus reducing discontiunity of the wiring layer from the solder.

8. 发明专利

JPH0745757A SEMICONDUCTOR DEVICE AND MANUFACTURE OF HEAT DISSIPATING DEVICE THEREOF 失效
公开(公告)号：JPH0745757A
公开(公告)日：1995-02-14
申请号：JP19114293
申请日：1993-08-02
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , TSUBOI TOSHIHIRO , TATE HIROSHI , OZAKI HIROSHI , KIKUCHI MASAYUKI , KIKUCHI NORISHIGE , KOSAKU HIROSHI , OTSUKA KANJI
IPC分类号： H01L23/36
摘要： PURPOSE:To enable the pin fins of a heat dissipating device of pin fin structure to be easily, efficiently, and surely fixed at a low cost. CONSTITUTION:Spacer metal wires 8 and pin fin metal wires 9 of aluminum or copper are fixed to a heat dissipating plate 6-1 of aluminum or copper with brazing material 10, and the spacing metal wires 8 are fixed at a prescribed interval with the metal wires 9. Then, the metal wires 8 are fixed in the spaces between the metal wires 9 respectively, whereby the metal wires 8 are interposed between the metal wires 9 respectively to serve as guides to set the metal wires 9 upright.

9. 发明专利

JPH06132349A LOW NOISE SEMICONDUCTOR PACKAGE 失效
公开(公告)号：JPH06132349A
公开(公告)日：1994-05-13
申请号：JP16063692
申请日：1992-06-19
申请人： HITACHI LTD
发明人： MIWA TAKASHI , OTSUKA KANJI , SHIRAI MASAYUKI , MATSUNAGA TOSHIHIRO
IPC分类号： H01L21/60
摘要： PURPOSE:To obtain the semiconductor package in which a current flows to the grounding or a power source in the switched direction when the output buffer of a TTL and a CMOS is switched, the electromotive force corresponging to the inductance of the power source or the grounding is generated, this electromotive force is turned into noise, and a signal is made larger in proportion to the increases in speed. CONSTITUTION:The power source of a multilayer tab substrate or printed substrate 3, consisting of two or more layers, and a grounding 5 are connected by a bypass capacitor 2, and a bypass capacitor 2 is positioned in the vicinity of a semiconductor chip 1 in the semiconductor package. As a result, when the power source and the grounding are connected by the by pass capacitor 2, a high frequency signal is passed through the resistor of the capacitor easily. As a result, the boosting of electromotive force can be suppressed, a high speed low noise package can be realized and also as power source/grounding are connected by the bypass capacitor in the neighborhood of the chip, the efficiency of the package becomes great.

10. 发明专利

JPH0697359A MOUNTING STRUCTURE FOR LSI CHIP 失效
公开(公告)号：JPH0697359A
公开(公告)日：1994-04-08
申请号：JP24476092
申请日：1992-09-14
申请人： HITACHI LTD
发明人： MIZUKAMI MASAO , OTSUKA KANJI , SHIRAI MASAYUKI
IPC分类号： H01L23/50 , H05K1/18
摘要： PURPOSE:To provide an LSI chip mounting structure in which high pin count can be achieved easily without sacrifice of heat dissipation properties or electric characteristics. CONSTITUTION:A flange part 11 acting as legs for supporting a package 1 itself is provided on the outer periphery of a rectangular pan type metal package body case 10. An LSI chip 20 is then bonded on the rear of the package body case 10 while a plurality of leads 30 are formed in film shape and fixed through a dielectric sheet 40 to the rear of the package body case 10 thus providing a lead part having microstrip line structure. Furthermore, electrically connectable terminal parts, e.g. power supply electrodes or ground electrodes of a mounting board, are provided at four corners of the package body case 10. This constitution increases the number of required leads and effectively employed in the mounting of a high performance LSI chip having high operating speed and heated upto a high temperature.

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