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1. 发明专利

JP2002141275A EXPOSURE METHOD AND SEMICONDUCTOR ELEMENT MANUFACTURED USING THE METHOD 失效
公开(公告)号：JP2002141275A
公开(公告)日：2002-05-17
申请号：JP2000337875
申请日：2000-11-06
申请人： HITACHI LTD
发明人： OGAWA TARO , ITO MASAAKI
IPC分类号： G03F1/24 , G03F1/70 , G03F7/20 , G03F7/22 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To solve the problem of a reflection type mask being used in EUV lithography, the allowable defect size of the mask to be very small, so that defining of a defective position using mask inspection equipment and correction of the defective position have been very difficult. SOLUTION: In this exposure method, multiple exposures of mask pattern images are made on a prescribed position on a wafer by using plural masks having the same mask pattern, and a desired circuit pattern is obtained. As a result, possibility of defects existing on the same positions in pattern regions on the different masks can be practically avoided, so that a mask pattern image which is deteriorated by defects is overlapped with a mask pattern image which has no defects, and restoration of the mask pattern image becomes possible. Thereby reduction in defect transfer property of a mask or expansion of allowable defect size becomes possible.

2. 发明专利

JP2000091194A EXPOSURE METHOD AND REFLECTION-TYPE MASK 失效
公开(公告)号：JP2000091194A
公开(公告)日：2000-03-31
申请号：JP25628898
申请日：1998-09-10
申请人： HITACHI LTD
发明人： ITO MASAAKI , OGAWA TARO , YAMANASHI HIROMASA , SEYA HIDEKAZU
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To align a reflection-type mask and a sample by forming a mark for alignment on a multilayer film, applying light to the mark, and utilizing light being reflected from the mark. SOLUTION: A multilayer film 2 is laminated on a substrate 1. A middle layer 3 and an absorption body 4 are successively laminated on the multilayer film 2. Then, a resist pattern is formed by using the electron beam lithography method as an etching mask, and the absorption body 4 is eliminated by dry etching. After that, a resist is eliminated by oxygen plasma ashing, the middle layer 3 being exposed is eliminated by wet etching, and a desired pattern 5 and a mark 6 for alignment are formed. Light is applied to a mark 6, and the reflection-type mask and the sample are aligned by using light being reflected from the mark 6, thus overlapping a transfer pattern using a reflection- type mask with a simple manufacturing process.

3. 发明专利

JPH11112669A PAGING SYSTEM AND VOICE RECOGNITION DEVICE USED FOR THE SAME 失效
公开(公告)号：JPH11112669A
公开(公告)日：1999-04-23
申请号：JP27268497
申请日：1997-10-06
申请人： HITACHI LTD
发明人： SUZUKI TOSHIAKI , NAKAYAMA TAKURO , OGAWA TARO , MURAMATSU RYUJIRO , MATSUDA TOSHIYUKI , SATO HITOSHI
IPC分类号： G10L15/00 , H04M3/42 , H04W28/06 , H04W84/02 , G10L3/00 , H04Q7/38
摘要： PROBLEM TO BE SOLVED: To transmit a message by voice input by separately constituting an external interface part and a voice recognition part. SOLUTION: Two barrier exchanges 30A and 30B are connected to a public network 20B of a carrier B. Then, as the common rear order position of the barrier exchanges 30A and 30B, a first voice recognition device 100A is housed. Also, pager exchanges 40A and 40B are connected to the respective two barrier exchanges 30A and 30B. Then, as the rear order device of the pager exchange 40B, a second voice recognition device 100B is housed. A customer data management system 70 transfers information with the barrier exchanges 30A and 30B, the pager exchanges 40A and 40B, the first voice recognition device 100A and the second voice recognition device 100B and performs the management of the message sentences of individual customers and the management of message transmission time, etc. Thus, usability of message input is improved.

4. 发明专利

JPH10208999A ALIGNMENT METHOD AND ALIGNER 失效
公开(公告)号：JPH10208999A
公开(公告)日：1998-08-07
申请号：JP611197
申请日：1997-01-17
申请人： HITACHI LTD
发明人： OIIZUMI HIROAKI , KATAGIRI SOUICHI , ITO MASAAKI , OGAWA TARO , YAMANASHI HIROMASA
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a self-standing film or a membrane having an appropriate area and strength and in-plane uniformity by forming a window material or a filter of a composite film composed of a plurality of kinds of films. SOLUTION: A window material or a filter 23 through which light passes before irradiating a first optical element is formed of a composite film composed of a plurality of kinds of films. The first film 21 of the composite film is formed as a self-standing film or a membrane having an appropriate area and strength and in-plane uniformity by using an element which is selected as to make the absorption coefficient of the film or membrane to light having a wavelength between 100nm and about 50nm as small as possible. On the first film 21, a second film 22 which does not absorb exposure light having a prescribed wavelength, but well absorbs light having a wavelength longer than the prescribed one is formed. Therefore, the exposure illuminance on the surface of a mask can be improved and the in-plane distribution of the film thickness of the filter can be reduced.

5. 发明专利

JPH10104848A PATTERN FORMING METHOD 失效
公开(公告)号：JPH10104848A
公开(公告)日：1998-04-24
申请号：JP25827396
申请日：1996-09-30
申请人： HITACHI LTD
发明人： OGAWA TARO , OIIZUMI HIROAKI , ITO MASAAKI , SAITO NORIO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To allow a reaction to proceed easily so that a high rate of silylation is attained. SOLUTION: A silylation agent contains one or more hydroxyl groups or one or more protective groups substd. into hydroxyl groups by an acid 3 which is generated in the exposed part of a resist film. When the silylation agent contains a hydroxyl group or a protective group substd. into the hydroxyl group by an acid, the silylation agent is polymerized by an ionic polymn. reaction in the presence of an acid as a catalyst at a point 2 of the resist base resin 1 where hydrogen bonds as well as at a point 4 where a hydroxyl group bonds A high yield of silylation is attained in lithography using UV of short wavelength as a source of exposed light having large absorption on the surface of the resist film and a sinple surface silylating process is enabled.

6. 发明专利

JPH09271084A BIDIRECTIONAL DATA TRANSFERRING METHOD AND ENCODED VOICE DATA RECORDING/REPRODUCING DEVICE 失效
公开(公告)号：JPH09271084A
公开(公告)日：1997-10-14
申请号：JP7660396
申请日：1996-03-29
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： OGAWA TARO , SHIBATA KENTARO , ITO MORIO
IPC分类号： G06F3/06 , G06F13/38 , H04J3/00 , H04M3/42 , H04Q11/04
摘要： PROBLEM TO BE SOLVED: To bidirectionally and efficiently transfer data in each channel between a data highway and a disk device. SOLUTION: Everytime when any one of buffer memories 9-1 to 9-9 is successively selected for a fixed period as a highway buffer memory, data are bidirectionally transferred between the selected memory and the highway through an interface circuit 1. On the other hand, each of non-highway buffer memories bidirectionally transfers data to/from the disk device 6 through an interface circuit 5 in a state suppressing seak time and rotation waiting time as less as possible.

7. 发明专利

JPH09190993A SURFACE PURIFICATION METHOD 失效
公开(公告)号：JPH09190993A
公开(公告)日：1997-07-22
申请号：JP110096
申请日：1996-01-09
申请人： HITACHI LTD
发明人： OGAWA TARO , SAITO AKIO , ITO MASAAKI , SAITO NORIO
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent the re-contamination of a surface once purified due to chemicals, air or the like by purifying the surface at a low temperature, by transferring electrons from a substrate or the pollution stuck to the substrate, in vacuum, in reduced pressure, or in inert gas atmosphere, and by irradiation with energy beam equivalent to the excitation of an antibonding state between the substrate and pollution. SOLUTION: A valve 6 is opened and an Si substrate 13 subjected to the HF purification is placed in a chamber 2, a valve 4 is opened and the pressure is reduced with a pump 3, a valve 5 is opened, and soft X-ray 1 is made to irradiate the surface of substrate. By this radiation, Si2p electrons of the Si substrate 13 are transferred, the antibonding state of Si-C(carbon) is excited, Si of substrate 13 and C of the pollution 14 is turned into antibonding state, by which the pollution 14 can be turned into desorption. By doing this, the contamination of organic matters can be removed in the chamber at a low temperature and a clean surface can be obtained.

8. 发明专利

JPH08320574A FORMATION OF PATTERN 失效
公开(公告)号：JPH08320574A
公开(公告)日：1996-12-03
申请号：JP12619695
申请日：1995-05-25
申请人： HITACHI LTD
发明人： OGAWA TARO , OIIZUMI HIROAKI , ITO MASAAKI , SAITO NORIO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/075 , G03F7/26 , G03F7/36 , G03F7/38 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a dry process for executing a resist processing stage in lithography for super microfabrication of semiconductors by integral processing in vacuum. CONSTITUTION: A lower layer resist film 2 having high dry etching resistance to a substrate 3 which is to be worked, consists of Si, etc., and contains a benzene ring, etc., and an upper layer resist film 11 consisting of the deriv. of polymethacrylate contg. Si, etc., are successively deposited on this substrate by using polynm. reaction by plasma, light or heat in a vacuum chamber and thereafter, radicals are generated 7 on the front surface or the inside of the upper layer resist film by exposure with energy beams. Next, a monomer, such as styrene, is graft-polymerized with these radicals and the upper layer resist film is processed to a pattern form by dry etching 10 of gaseous halogen by utilizing the dry etching selectability of the exposed parts and the unexposed parts. Further, the lower layer resist is processed to the pattern form by dry etching of oxygen with these patterns as a mask.

9. 发明专利

JPH0844084A PATTERN FORMING METHOD 失效
公开(公告)号：JPH0844084A
公开(公告)日：1996-02-16
申请号：JP17641194
申请日：1994-07-28
申请人： HITACHI LTD
发明人： OGAWA TARO , YAMAGUCHI ATSUKO , SOGA TAKASHI , UCHIDA FUMIHIKO , MATSUI MIYAKO , ITO MASAAKI , MATSUZAKA TAKASHI
IPC分类号： G03F7/038 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a dry developing method which executes pattern formation by dry etching, etc., from latent images formed by exposure without using ordinary wet development processing in lithography for ultrafine processing of semiconductors. CONSTITUTION:A resist film 2 having high dry etching resistance and contg. phenyl groups, etc., is deposited by polynm. of reactive gases on a substrate 3 to be processed and thereafter, radicals 5 are generated in the surface and inside of this resist film 2 by exposure of ionization radiations 4. Next, the resist film 2 is exposed into an atmosphere of an Si-contg. monomer 6 to effect graft polymn. of the Si-contg. monomer with the radicals 5. The resist film is then subjected to reactive ion etching with oxygen, by which the Si in the Si-contg. monomer 6 graft polymerized with the radicals 5 of the exposed parts is oxidized to form an etching mask. Resist patterns 8 of a negative type are thus formed. Further, the processing of the substrate 3 is executed by dry etching using the resist patterns 8 as a mask.

10. 发明专利

JPH07283112A RESIST PATTERN FORMATION AND ITS DEVICE 失效
公开(公告)号：JPH07283112A
公开(公告)日：1995-10-27
申请号：JP7038694
申请日：1994-04-08
申请人： HITACHI LTD , SOLTEC KK
发明人： YAMAGUCHI ATSUKO , OGAWA TARO , SOGA TAKASHI , UCHIDA FUMIHIKO , ITO MASAAKI , MATSUZAKA TAKASHI , TAKEDA EIJI , OIIZUMI HIROAKI
IPC分类号： G03F7/075 , C23F1/00 , G03F7/36 , H01L21/027
摘要： PURPOSE:To prevent oxidation of silicon atom in resist and to carry out highly accurate patterning at high throughput by carrying out all the operations including carrying of a substrate from an exposure process to a development process in non-oxidizing atmosphere wherein oxidizing gas such as oxygen does not exist. CONSTITUTION:A development chamber 16 provided with a vacuum evacuation system is installed besides an exposure chamber 15. Both chambers are connected by gate valves 11, 12, 13, 14 or by the gate valves 11, 12, 13, 14 and a sub-chamber. A substrate after exposure is carried into the development chamber 16 without being brought into contact with air. Thereby, generation of silicon oxide is prevented.

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