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1. 发明专利

JPH07283112A RESIST PATTERN FORMATION AND ITS DEVICE 失效
公开(公告)号：JPH07283112A
公开(公告)日：1995-10-27
申请号：JP7038694
申请日：1994-04-08
申请人： HITACHI LTD , SOLTEC KK
发明人： YAMAGUCHI ATSUKO , OGAWA TARO , SOGA TAKASHI , UCHIDA FUMIHIKO , ITO MASAAKI , MATSUZAKA TAKASHI , TAKEDA EIJI , OIIZUMI HIROAKI
IPC分类号： G03F7/075 , C23F1/00 , G03F7/36 , H01L21/027
摘要： PURPOSE:To prevent oxidation of silicon atom in resist and to carry out highly accurate patterning at high throughput by carrying out all the operations including carrying of a substrate from an exposure process to a development process in non-oxidizing atmosphere wherein oxidizing gas such as oxygen does not exist. CONSTITUTION:A development chamber 16 provided with a vacuum evacuation system is installed besides an exposure chamber 15. Both chambers are connected by gate valves 11, 12, 13, 14 or by the gate valves 11, 12, 13, 14 and a sub-chamber. A substrate after exposure is carried into the development chamber 16 without being brought into contact with air. Thereby, generation of silicon oxide is prevented.

2. 发明专利

JPH1125897A ELECTRON BEAM RADIATION METHOD AND ELECTRON BEAM RADIATION DEVICE 失效
公开(公告)号：JPH1125897A
公开(公告)日：1999-01-29
申请号：JP18198297
申请日：1997-07-08
申请人： HITACHI LTD
发明人： HAYATA YASUNARI , OTA HIROYA , SOMETA YASUHIRO , MATSUZAKA TAKASHI , SAITO NORIO
IPC分类号： H01J37/141 , H01J37/147 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an electron beam radiation method and electron beam radiation device, in which blurs are not generated in electron beams, large limitation in design of an optical element does not exist, and high-speed operation is possible. SOLUTION: Electron beams are generated with an electron source, focused with a deflection lense, and deflected to the desirable position of an object (a sample 208). The deflection lense consists of a first electromagnetic lense 202 and a second electromagnetic lense 205 having different exciting direction, and a first electromagnetic deflector 203 and a second electromagnetic deflector 204. They are arranged so that each center of the first electromagnetic deflector 203 and the second electromagnetic deflector 204 is positioned within the opening part of the magnetic path of the first electromagnetic lense 202, so as to be positioned vertically interposing the center of the magnetic path of the first electromagnetic lense 202.

3. 发明专利

JPH1079335A ELECTRON BEAM LITHOGRAPHY SYSTEM 失效
公开(公告)号：JPH1079335A
公开(公告)日：1998-03-24
申请号：JP23391296
申请日：1996-09-04
申请人： HITACHI LTD
发明人： KATO MAKOTO , MATSUZAKA TAKASHI , SATO KAZUHIKO
IPC分类号： G03F7/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To mount a batch pattern on the second mask as much as possible without wastefullness by a method wherein an aperture part is selected from the first mask having the aperture parts of a plurality of kinds of sizes in conformity with the size of the batch pattern to be formed by the second mask. SOLUTION: A batch pattern is selected by a batch pattern selecting mechanism, and a lithography pattern is projected on the material to be processed. At this point, the first mask 17, having a plurality of kinds of aperture parts 18, 19 and 20, is used. As a result, aperture parts 22, 23 and 24, having the pitch optimum to the respective size, can be arranged without waste on the second mask 21. Although a mechanical selective structure is shown on an aperture selective structure, and also an example of an electromagnetic selective structure is shown on a batch pattern, the combination of thereof can be made freely. Also, the aperture part of the first mask 17 illustrates the case of three kinds, but any number of kinds may be used. Besides, the batch patterns 22, 23 and 24 indicate by a constant pitch respectively, but a random pitch may be used.

4. 发明专利

JPH0844084A PATTERN FORMING METHOD 失效
公开(公告)号：JPH0844084A
公开(公告)日：1996-02-16
申请号：JP17641194
申请日：1994-07-28
申请人： HITACHI LTD
发明人： OGAWA TARO , YAMAGUCHI ATSUKO , SOGA TAKASHI , UCHIDA FUMIHIKO , MATSUI MIYAKO , ITO MASAAKI , MATSUZAKA TAKASHI
IPC分类号： G03F7/038 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a dry developing method which executes pattern formation by dry etching, etc., from latent images formed by exposure without using ordinary wet development processing in lithography for ultrafine processing of semiconductors. CONSTITUTION:A resist film 2 having high dry etching resistance and contg. phenyl groups, etc., is deposited by polynm. of reactive gases on a substrate 3 to be processed and thereafter, radicals 5 are generated in the surface and inside of this resist film 2 by exposure of ionization radiations 4. Next, the resist film 2 is exposed into an atmosphere of an Si-contg. monomer 6 to effect graft polymn. of the Si-contg. monomer with the radicals 5. The resist film is then subjected to reactive ion etching with oxygen, by which the Si in the Si-contg. monomer 6 graft polymerized with the radicals 5 of the exposed parts is oxidized to form an etching mask. Resist patterns 8 of a negative type are thus formed. Further, the processing of the substrate 3 is executed by dry etching using the resist patterns 8 as a mask.

5. 发明专利

JPH06338446A CHARGED-PARTICLE-BEAM ALIGNER AND DRAWING METHOD USING IT 失效
公开(公告)号：JPH06338446A
公开(公告)日：1994-12-06
申请号：JP12871293
申请日：1993-05-31
申请人： HITACHI LTD
发明人： KAWAMURA YOSHIO , MATSUZAKA TAKASHI , MIZUISHI KENICHI , SAITO NORIO , UCHIDA FUMIHIKO , NAKAYAMA YOSHINORI , HAYATA YASUNARI , SATO HIDETOSHI , TANAKA SHINJI
IPC分类号： G03F7/20 , G21K5/04 , H01J37/073 , H01J37/305 , H01L21/027
摘要： PURPOSE:To realize a charge-particle-beam aligner wherein a plurality of charged-particle-beam sources can be arranged at a mutual interval of several mm or lower, various gases are introduced onto the face of a substrate to be treated and a desired treatment or a working operation can be executed to the face of the substrate and to realize a drawing method using it. CONSTITUTION:Evacuation chambers 104, 105, 106 and an air supply chamber 101 which have been stacked as multistages transversely to light paths of charged-particle beams radiated from a plurality of charged-particle-beam sources 103, the side of the charged-particle-beam sources 103 is set to a high vacuum, a gas is introduced to the face of a substrate 200 to be treated, a charged-particle-beam source means 100 and the substrate 200 are rocked relatively, and a drawing operation is performed by a plurality of charged-particle beams onto the substrate 200 to be treated.

6. 发明专利

JPH06216016A ELECTRON BEAM LITHOGRAPHY DEVICE 失效
公开(公告)号：JPH06216016A
公开(公告)日：1994-08-05
申请号：JP468793
申请日：1993-01-14
申请人： HITACHI LTD
发明人： KONO TOSHIHIKO , KAWASAKI KATSUHIRO , MATSUZAKA TAKASHI , OTA HIROYA
IPC分类号： H01L21/027
摘要： PURPOSE:To form an excellent rectangular electron beam image at all times by an electron beam lithography device without performing the replacement operation of apertures and an attaching position adjusting operation. CONSTITUTION:A first coil 8a for astigmation correction coil 8a is provided below a first aperture 6a. A second coil 8B for astigmation correction is provided below a second aperture 6b. Also, a first rotation correcting lens 11b is provided below the first coil 8b, and a second rotation correcting lens 11b is provided below the second coil 8b.

7. 发明专利

JPH0669110A ELECTRON BEAM PATTERN LITHOGRAPHY SYSTEM 失效
公开(公告)号：JPH0669110A
公开(公告)日：1994-03-11
申请号：JP22124292
申请日：1992-08-20
申请人： HITACHI LTD
发明人： KONO TOSHIHIKO , KAWASAKI KATSUHIRO , MATSUZAKA TAKASHI , OTA HIROYA
IPC分类号： H01L21/027
摘要： PURPOSE:To increase production yield by enhancing connection accuracy and registration accuracy of a pattern in registration lithography. CONSTITUTION:In the pattern lithography system where a predetermined pattern is formed on the surface of a sample 14 by controlling an electron beam projected from an electron gun 2 through a deflection system, an alignment mark 16 is drawn under a state where an electron beam 15 is deflcted by a maximum amount or an arbitrary amount during drawing work of a first layer pattern. The alignment mark 16 is detected through a signal processing system 19 while carrying out deflecting operation of the electron beam 15 prior to drawing start of a second layer pattern and the detection results are fed through a system control computor 17 back to a deflection distortion correcting amount for a deflection control system 18.

8. 发明专利

JPH05315231A SAMPLE STAGE AND ITS TEMPERATURE CONTROL METHOD 失效
公开(公告)号：JPH05315231A
公开(公告)日：1993-11-26
申请号：JP11877792
申请日：1992-05-12
申请人： HITACHI LTD
发明人： OTA HIROYA , KONO TOSHIHIKO , KAWASAKI MASAKATSU , MATSUZAKA TAKASHI
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To perform a drawing operation with high accuracy by controlling the temperature of a sample stage in an electron-beam lithography apparatus. CONSTITUTION:A sample stage in an electron-beam lithography apparatus is constituted of a table 104, a table 103 and a drive system 105. An element 108 which is provided with a Peltier effect or a space 109 is installed inside the table 103. An electric current is made to flow to the element 108 which is provided with the Peltier effect or a gas is supplied to, or evacuated from, the space 109 so as to control the temperature of the table 103 constituting the sample stage. Thereby, the temperature change of the sample stage is reduced, and the error of a drawing operation can be reduced when a sample or a cassette is expanded or contracted due to a temperature fluctuation.

9. 发明专利

JPH0554251B2 失效
公开(公告)号：JPH0554251B2
公开(公告)日：1993-08-12
申请号：JP4216583
申请日：1983-03-16
申请人： HITACHI LTD
发明人： SAITO NORIO , OZASA SUSUMU , MATSUZAKA TAKASHI
IPC分类号： H01L21/30 , H01J37/147 , H01J37/317 , H01L21/027

10. 发明专利

JPH02250311A DRAWING BY ELECTRON BEAM 失效
公开(公告)号：JPH02250311A
公开(公告)日：1990-10-08
申请号：JP7060789
申请日：1989-03-24
申请人： HITACHI LTD
发明人： MATSUOKA GENYA , MATSUZAKA TAKASHI
IPC分类号： H01L21/027
摘要： PURPOSE:To execute a high-speed and high-accuracy drawing operation by a method wherein a small beam is formed of one part of a pattern used for a character projection and a position of the pattern on a specimen is detected. CONSTITUTION:A character pattern as a basis of a repetition is installed on a second aperture 5; when an image of a first aperture is deflected as indicated by A by using a deflector 4, a very small beam 6 can be formed. On the other hand, when the image is deflected as indicated by B, a very small beam 7 can be formed. Since the two very small beams 6, 7 contain information on positions at both ends of the character pattern, a position of a reference pattern is detected by the two very small beams; information on a position of the origin, a size and the like of the pattern is obtained, after that, a correction amount is found. This operation is executed at each character pattern and the correction amount is formed and stored. When a drawing operation is executed, a correction data obtained from the correction amount is fed back automatically to an electron-optical system posterior to the second aperture. Thereby, a drawing operation can be executed at high speed and with high accuracy.

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