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1. 发明专利

JPH08129981A FIELD EMISSION TYPE ELECTRON GUN AND ELECTRON BEAM DEVICE 失效
公开(公告)号：JPH08129981A
公开(公告)日：1996-05-21
申请号：JP26508594
申请日：1994-10-28
申请人： HITACHI LTD
发明人： HIRANO NOBUO , KOBARI TOSHIAKI , NAKAIZUMI YASUSHI
IPC分类号： G03F7/20 , H01J37/04 , H01J37/073 , H01J37/26 , H01J37/305 , H01L21/027
摘要： PURPOSE: To provide a field emission type electron gun by which brightness is enhanced and which emits a stable electrom beam. CONSTITUTION: A field emission type electron gun is provided with an ammeter 24 to detect an electron beam current, an operation circuit 25 to perform operation on the ratio B/A of an component B to a DC component A of a detected electrom beam current, a filament 41, electric power supply 44 for the filament and a control circuit 26 to order to discharge gas to an electron gun chamber 1 from the filament 41 by supplying electric power to the filament 41 when the ratio B/A of the AC component of the electron beam current exceeds a preset value.

2. 发明专利

JPH04215240A CHARGED PARTICLE BEAM DEVICE 失效
公开(公告)号：JPH04215240A
公开(公告)日：1992-08-06
申请号：JP40183390
申请日：1990-12-13
申请人： HITACHI LTD
发明人： KOBARI TOSHIAKI , SATO OSAMU , UEDA SHINJIRO , ISHIDA YASUHIKO , SUZUKI MUNENOBU , NAKAIZUMI YASUSHI
IPC分类号： H01J37/16 , H01J37/18
摘要： PURPOSE:To obtain a stabilized particle beam source such as an electron beam source by protecting a particle beam source chamber of the charged particle beam such as an electron gun chamber of an electron microscope from pollution, and maintaining excellent super high vacuum environment. CONSTITUTION:Vacuum containers forming a charged particle beam device, for example, an electron gun chamber 1, a mirror cylinder 2 and a data chamber 3 of an electron microscope are made of stainless steel, of which the surface is covered with boron nitride. A non-evaporation getter 15 is provided in the electron gun chamber 1. The pollution by gas discharge from a charged particle beam source chamber and flow-in of the gas from other vacuum containers is thereby prevented, and exhaust capacity of the particle beam source chamber is improved to maintain super high vacuum environment so that a stabilized charged particle beam having a good focusing property is obtained.

3. 发明专利

JPH04127001A SCANNING TUNNEL MICROSCOPE 失效
公开(公告)号：JPH04127001A
公开(公告)日：1992-04-28
申请号：JP24697990
申请日：1990-09-19
申请人： HITACHI LTD
发明人： FUKUHARA SATORU , YAMADA OSAMU , NAKAIZUMI YASUSHI , FUTAMOTO MASAAKI
IPC分类号： G01B7/34 , G01N37/00 , G01Q60/10 , G01Q60/16 , H01J37/28
摘要： PURPOSE:To prevent a break of a probe and to improve the operating convenience of the probe by employing lanthanum hexaboride as the probe. CONSTITUTION:A gap between a sample 6 and a probe 5 is controlled in the following manner. A Z-axis piezo 2 for rough adjustment is driven by a Z-axis piezo control circuit 11 to make the probe 5 close to the tunnel area of the sample 6. At this time, a tunnel current of several nA is allowed to flow between the sample 6 and probe 5 by impressing an optional voltage between the sample and probe. Since this tunnel current is a function of the gap between the sample 6 and probe 5, if the piezo 2 is controlled according to the feedback method so as to make the tunnel current constant, the roughness information of the sample 5 is obtained from the displacement of the piezo 2. The maximum extension of the Z-axis of piezo is prescribed for the using piezo. Therefore, when the height exceeding the operable limit is measured, the servo control is not effected, resulting in a collision of the probe against the sample. The probe may be eventually broken. Therefore, a single crystal of considerably hard lanthanum hexaboride is employed as the probe 5, thereby preventing the probe from being broken.

4. 发明专利

JPH03235004A SCANNING ELECTRON MICROSCOPE WITH SCANNING TUNNELING MICROSCOPE 失效
公开(公告)号：JPH03235004A
公开(公告)日：1991-10-21
申请号：JP3114290
申请日：1990-02-09
申请人： HITACHI LTD
发明人： YAMADA OSAMU , HAZAKI EIICHI , NAKAIZUMI YASUSHI
IPC分类号： G01B7/34 , G01N37/00 , G01Q10/00 , G01Q30/02 , G01Q60/10 , H01J37/28
摘要： PURPOSE:To easily and accurately set a measuring portion to be measured by a small STM (scanning tunneling microscope) by an SEM (scanning electron microscope) by displaying a specimen and the probe of the STM on the screen of the SEM at the same time. CONSTITUTION:An STM controller 13 sets a voltage applied to a piezoelectric element 6 to a minimum value and sets a probe 5 in the remotest state from a specimen 1. A moving mount 9 is operated so that the probe 5 is positioned in a scanning electron image on the screen of an STM image display 16. In this condition, the controller 13 gradually increases a voltage applied to the element 6 to make the probe 5 approach to the specimen 1 until a tunnel current flows. When the tunnel current is detected, a prescribed voltage value is subtracted from the voltage applied at this time and an obtained voltage is given to the element 6 as an applied voltage. The displacement quantity of the element 6 corresponding to the subtracted voltage value can be determined as an approximate distance between the probe 5 and the specimen 1.

5. 发明专利

JPS61232545A OBSERVING DEVICE FOR SEMI-CONDUCTOR PATTERN FACE EMPLOYING SCANNING TYPE ELECTRON MICROSCOPE 失效
公开(公告)号：JPS61232545A
公开(公告)日：1986-10-16
申请号：JP7381085
申请日：1985-04-08
申请人： HITACHI LTD
发明人： NAKAIZUMI YASUSHI
IPC分类号： H01L21/66 , G01N21/88 , G01N21/94 , G01N21/956 , H01J37/28
摘要： PURPOSE:To simplify the structure of stage by arranging first mirror body in horizontal direction or below the sample chamber while arranging second mirror body with specific angle against the first mirror body and arranging the semi-conductor pattern face approximately in normal against the first mirror body in the specimen chamber. CONSTITUTION:When observing the pattern of wefer 3, electron beam is produced from the first or second mirror body 2 or 5 and impinges against the wefer 3 to emit secondary electrons. A detector for detecting the secondary electrons is arranged in the sample chamber 1. Since the pattern face of wefer 3 is arranged normally against the direction of gravity, foreign matters in the sample chamber 1 will scarcely adhere to the pattern face of wefer 3. When observing the wefer 3 obliquely, a mirror 5 is employed in place of the mirror body 2, to enable observation of wefer 3 while inclining substantially about 60 deg.. When fixing said mirror body 5, the structure of stage 4 is simplified while production of foreign matter is reduced.

6. 发明专利

JPS60189855A Secondary electron detector 失效
标题翻译：二次电子探测器
公开(公告)号：JPS60189855A
公开(公告)日：1985-09-27
申请号：JP4545284
申请日：1984-03-12
申请人： Hitachi Ltd
发明人： KURODA KATSUHIRO , TODOKORO HIDEO , OOTAKA TADASHI , NAKAIZUMI YASUSHI
IPC分类号： G01N23/225 , G01T1/28 , H01J37/244
CPC分类号： H01J37/244
摘要： PURPOSE:To enable only secondary electrons with a specific energy level to be detected by installing an auxiliary lens and a diaphragm between the sample and a secondary electron detector. CONSTITUTION:Secondary electron rays discharged from the sample are passed through an auxiliary lens 5 and a diaphragm 6 before being detected by a detector 4. Therefore the secondary electrons discharged from the sample receive the lens effect of the auxiliary lens 5, which vary according to the energy level of the secondary electron. For example, when secondary electrons 10 with an energy level of E0 are passed through the diaphragm 6, secondary electrons 11 with an energy level lower than E0 and those with an energy level higher than do not pass through the diaphragm 6. Accordingly it is possible to detect only secondary electrons with a specific energy level.
摘要翻译：目的：通过在样品和二次电子探测器之间安装一个辅助透镜和一个隔膜，仅能够检测到具有特定能级的二次电子。构成：从检测器4检测出，从样品放出的二次电子射线通过辅助透镜5和光圈6，因此从样品放出的二次电子受到辅助透镜5的透镜效应，根据二次电子的能级。例如，当能量水平为E0的二次电子10通过隔膜6时，能级低于E0的二次电子11和能级高于二级电子的二次电子不会通过隔膜6.因此，以仅检测具有特定能级的二次电子。

7. 发明专利

JPS60163358A SCANNING ELECTRON MICROSCOPE AND SIMILAR DEVICE 失效
公开(公告)号：JPS60163358A
公开(公告)日：1985-08-26
申请号：JP1831584
申请日：1984-02-06
申请人： HITACHI LTD
发明人： KURODA KATSUHIRO , OOTAKA TADASHI , NAKAIZUMI YASUSHI
IPC分类号： H01J37/244 , H01J37/28
摘要： PURPOSE:To enable images to be observed with an ultrahigh resolution by performing image display by taking out only secondary electrons having a specified energy width through a band pass filter consisting of the first to the third grids. CONSTITUTION:Electron rays of a scanning electron microscope are converged with a lens 1 before being irradiated upon a sample 2 and two-dimensionally scanned by a deflector 3. The thus produced secondary electrons are then accelerated by an electric potential (V1) applied to a first grid 4 before only secondary electrons with a special energy are passed through a second grid 5 to which a control electric potential (V21) is applied. The secondary electrons passing through the second grid 5 are accelerated by a third grid 6 and pass through the third grid 6 before being detected with a detector 7. The electric potentials (V21) and (V22) can be interchangeably applied to the second grid 5. Thus produced signals are subjected to subtraction in a subtracting circuit 9 so as to perform display on a picture tube 10. As a result, an SEM image can be produced only with secondary electrons of a specified energy, thereby improving the resolution of the scanning electron microscope.

8. 发明专利

JPS5931173B2 JPS5931173B2 - 失效
公开(公告)号：JPS5931173B2
公开(公告)日：1984-07-31
申请号：JP4229475
申请日：1975-04-09
申请人： Hitachi Ltd
发明人： NAKAIZUMI YASUSHI , OOTAKA TADASHI , HOKOTANI YOSHIO
IPC分类号： H01J37/073 , H01J1/30 , H01J7/18

9. 发明专利

JPS58223246A Field emission electron gun 失效
标题翻译：场发射电子枪
公开(公告)号：JPS58223246A
公开(公告)日：1983-12-24
申请号：JP10540582
申请日：1982-06-21
申请人： Hitachi Ltd
发明人： NAKAIZUMI YASUSHI , NAKADA TOSHIAKI , YAMADA MITSUHIKO , SHIMOTOMAI YOSHIKAZU
IPC分类号： H01J37/073
CPC分类号： H01J37/073
摘要： PURPOSE:To prevent flashing from being performed even when field emission is stopped and its resume is repeated by providing a switching circuit in a flashing circuit and turning off the flashing circuit after flashing is completed. CONSTITUTION:A needle-type cathode 1 is spot-welded to a tungusten filament 2. One end of this filament 2 is connected to a flashing power supply 4 through a switch 3 and the other is connected to the flashing power supply 4. In addition, a high voltage power supply 6 is connected to the one end of the filament 2 and an anode is provided opposed to the needle-type electrode 1 and then the high voltage 6 is connected to this anode. These flashing power supply 4 and high voltage power supply 6 are connected to a control section 7 and a switch 8 is connected to this control section 7. As a result, workability can sharply be improved without performing any unnecessary flashing.
摘要翻译：目的：为了防止在场发射停止时进行闪烁，并通过在闪烁电路中设置开关电路并在闪烁完成后关闭闪烁电路来重复其恢复。构成：针状阴极1被点焊到钨丝丝2上。该丝2的一端通过开关3连接到闪光电源4，另一端连接到闪光电源4.另外高压电源6连接到灯丝2的一端，并且与针型电极1相对设置阳极，然后将高电压6连接到该阳极。这些闪光电源4和高电压电源6连接到控制部7，并且开关8连接到该控制部7.结果，可以在不执行任何不必要的闪烁的情况下大大提高可操作性。

10. 发明专利

JPS55102163A SAMPLE FINE ADJUSTMENT OF SCANNING TYPE ELECTRON MICROSCOPE 失效
公开(公告)号：JPS55102163A
公开(公告)日：1980-08-05
申请号：JP938379
申请日：1979-01-29
申请人： HITACHI LTD
发明人： SAITOU NAOTAKE , NAKAIZUMI YASUSHI
IPC分类号： H01J37/20
摘要： PURPOSE:To make a sample removable in the direction of electron beams, by setting a simple fine adjustment mechanism in a sample chamber through an eccentric rotary shaft. CONSTITUTION:A holder 8 for fitting a rotary flange 9 is set to a wall 7 of a sample chamber 17. The rotary flange 9 has a through hole to which a simple sample fine adjustment, composed of a body 13, movable shaft 6, holder 5, etc., is fitted through an O-ring 11. Since the hole center is eccentric to the holder center, a sample 4 is vertically moved by the eccentricity of the rotary flange 9, as the flange 9 is turned by a handle 16 while holding the body 13 by hand. The sample 4 is also movable in the direction of electron beams by means of the fine adjustment which can move the sample in the X and Y directions normal to the electron beams 2 through control of knobs 12, 15.

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