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1. 发明专利

JPH10317172A ION BEAM MACHINING DEVICE 失效
公开(公告)号：JPH10317172A
公开(公告)日：1998-12-02
申请号：JP13193997
申请日：1997-05-22
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , OISHI SEITARO , TANAKA SHIGERU , ONUKI HISAO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To achieve the ion beam machining of high speed and high quality without coarsening the surface of a substrate by achieving the etching of a sample with the beam power using an ion beam machining device, and performing the switching to smaller beam power when the machining depth exceeds the thickness of a residual part of the sample. SOLUTION: The voltage is applied between a filament 3 and a chamber wall by an arc power supply 5 within an ion source chamber 1a of a vacuum container 1 to change the gas into the plasma. The ions in the plasma are drawn out by a draw-out electrode comprising an acceleration electrode 9 and a deceleration electrode 10, and introduced into a machining chamber 1b as the ion beam 20. A substrate 100 on a substrate holder 13 is irradiated with the ion beam 20 to achieve the etching. When the etching depth exceeds the thickness of a residual part of the substrate, the beam power is switched to the smaller one than the beam power during the first etching by an output power supply control device 12 to be connected to each power supply, and the residual part is etched.

2. 发明专利

JPH10140348A ION BEAM WORKING DEVICE 失效
公开(公告)号：JPH10140348A
公开(公告)日：1998-05-26
申请号：JP30179696
申请日：1996-11-13
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , OISHI SEITARO , TANAKA SHIGERU , ONUKI HISAO
IPC分类号： C23C14/52
摘要： PROBLEM TO BE SOLVED: To extremely simply and securely detect the end point regardless of the kinds of materials and the dispersion of film thickness. SOLUTION: At the time of observation, the irradiation of ion beams 20 is intercepted, and furthermore, a prove 21 turns toward the side of a substrate 13, by which the image of the surface of the substrate is picked up, so that the milling stage of the substrate 13 can directly be visualized by a display 24 and, at this time, even in the case its state is the one short of milling, the prove 21 and a shutter 25 return the original positions, by which milling can swiftly be continued, so that the detection of the end point can correctly be executed.

3. 发明专利

JPH0874052A ION-BEAM SPUTTERING DEVICE AND ION-BEAM SPUTTERING METHOD 失效
公开(公告)号：JPH0874052A
公开(公告)日：1996-03-19
申请号：JP20961294
申请日：1994-09-02
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , ISHIKAWA YASUSHI
IPC分类号： C23C14/02 , C23C14/46 , C23C14/54
摘要： PURPOSE: To increase a film forming rate and to continue the formation of film even when an ion source is out of order. CONSTITUTION: A substrate 3 and a target 6 are opposed to each other in a vacuum chamber 1, and plural ion sources 7a to 7d are so arranged as to irradiate the one target 6. One ion source is used as a spare, and, when the ion source gets out of order while a film is formed by using other ion sources, the spare ion source is started up, and the formation of film is continued. As a result, the film forming rate is increased since plural ion sources pre used, and the ion source out of order is switched to the spare ion source while keeping a high vacuum.

4. 发明专利

JPH0754146A ION BEAM SPUTTERING DEVICE 失效
公开(公告)号：JPH0754146A
公开(公告)日：1995-02-28
申请号：JP19735393
申请日：1993-08-09
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , ISHIKAWA YASUSHI
IPC分类号： C23C14/46
摘要： PURPOSE:To prevent the intrusion of impurities into thin films by intrusion of a beam limiter into the thin films by sputtering. CONSTITUTION:A vacuum chamber 1 internally contains a target holder 2, a substrate holder 3 and the beam limiter 4. The ion beams drawn out by a drawing out electrode 14 from plasma formed by an ion source 10 are shaped by the beam limiter 4 and are cast to the target 7, by which the target is sputtered. The beam limiter 4 is composed of a member consisting of the same material as the material of the target 7 so that the beam limiter 4 does not become the impurity even if the beam limiter is sputtered by the ion beams and introduced into the thin films.

5. 发明专利

JPH0324262A FORMATION OF ORGANIC THIN FILM AND DEVICE THEREOF AND CORPUSCULAR RAY GENERATOR 失效
公开(公告)号：JPH0324262A
公开(公告)日：1991-02-01
申请号：JP15678789
申请日：1989-06-21
申请人： HITACHI LTD
发明人： ONO YASUNORI , ISOGAI MASATO , NAKAGAWA YUKIO , SEKI TAKAYOSHI , MIYAKE KIYOSHI , OHATA KOKICHI , NATSUI KENICHI , KETSUSAKO MITSUNORI , ARIMATSU KEIJI
IPC分类号： C23C14/12 , C23C14/34 , H01L21/312
摘要： PURPOSE:To form the org. thin film which is free from pinholes and intrusion of impurities by irradiating an org. compd. target with corpuscular rays which cut the molecular crystalline bonds of the org. compd. but do not cut the non- molecular crystalline bonds at the time of forming the thin film by the above- mentioned target. CONSTITUTION:An argon ion beam 20 is generated from an ion source 2 in a vacuum vessel 1 evacuated to a vacuum and the target 8 consisting of the org. compd. is irradiated with this beam by which sputtering particles 21 are splashed and the org. thin film is formed on a heated substrate 7. The target is then irradiated with the particle rays having the energy of about

6. 发明专利

JPS63312973A SPUTTERING DEVICE 失效
公开(公告)号：JPS63312973A
公开(公告)日：1988-12-21
申请号：JP14786787
申请日：1987-06-16
申请人： HITACHI LTD
发明人： NAKAGAWA YUKIO , NATSUI KENICHI , OSHITA YOICHI , SATO TADASHI , SETOYAMA HIDETSUGU , KAMEI MITSUHIRO
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
摘要： PURPOSE:To form a homogeneous film on plural substrates by specifying the width and length of an erosion area determined by the arrangement of a target and a magnet on its back as the prescribed range which is determined in relation to the diameter of the substrate. CONSTITUTION:The target 4 is arranged in a vacuum vessel 1 in opposition to the plural substrates 3 fixed on a substrate holder 2, and electric power is supplied from an electric power source 11. Under such conditions, plasma discharge is generated during the supply of a sputtering gas, and the particles sputtered from the target 4 are deposited on the substrates 3 to form a thin film. In the sputtering device, the form of the erosion area determined by the arrangement of the target 3 and the magnetron magnet 6 consisting of a couple of permanent magnets, etc., on the back of the target 4 is made so as to be regulated by a short side and a long side. When the width of (a)mm of the short side, the length of (b)mm of the long side, and the diameter of (d)mm of the substrate 3 are expressed in terms of alpha inches, 2d(alpha/3) -40 +40 and b>=n(alpha+15)+50 must be fulfilled. In the inequalities, (n) is the number of the substrates 3.

7. 发明专利

JPS63307272A ION BEAM SPUTTERING DEVICE 失效
公开(公告)号：JPS63307272A
公开(公告)日：1988-12-14
申请号：JP13979087
申请日：1987-06-05
申请人： HITACHI LTD
发明人： ONO YASUNORI , NAKAGAWA YUKIO , HAKAMATA YOSHIMI , NATSUI KENICHI , SATO TADASHI
IPC分类号： C23C14/46 , H01F41/18
摘要： PURPOSE:To form magnetic films uniform in film thickness and composition and having superior magnetic anisotropy, by providing a magnet means of impressing magnetic field on a substrate in an ion beam sputtering device. CONSTITUTION:An ion source 1 and a film-forming chamber 6 are evacuated and Ar gas is supplied to regulate the pressure on the film-forming chamber 6 side to the prescribed valve, and then, a filament 3 is electrified to discharge thermions and a D.C. current is impressed between the filament 3 and a vessel walls 12, and plasma is produced by means of electric discharge. Subsequently, an ion beam 32 is drawn from the plasma by means of an ion-drawing electrode 5, and a target 7 is irradiated with the ion beam 32 and the sputtered sputter grains 31 are deposited on a substrate 20. At this time, a magnetic field 33 is produced by means of a solenoid coil 30 and the magnetic field practically parallel to the direction of advance of the ion beam 32 is impressed on the substrate 20, and the substrate 20 is rotated by means of a motor 9. By this method, the thin films providing uniform film thickness and film quality and having superior magnetic anisotropy can be formed.

8. 发明专利

JPS6276120A 3-PHASE COMMON TANK TYPE GAS BREAKER 失效
公开(公告)号：JPS6276120A
公开(公告)日：1987-04-08
申请号：JP21507485
申请日：1985-09-30
申请人： HITACHI LTD
发明人： TSUKUSHI MASANORI , HASHIMOTO TAKESHI , NAKAGAWA YUKIO
IPC分类号： H01H33/915

9. 发明专利

JPS621866A SPUTTERING DEVICE 失效
公开(公告)号：JPS621866A
公开(公告)日：1987-01-07
申请号：JP14035885
申请日：1985-06-28
申请人： HITACHI LTD
发明人： OSHITA YOICHI , NAKAGAWA YUKIO
IPC分类号： C23C14/36 , C23C14/35 , H01F41/18
摘要： PURPOSE:To thoroughly increase the film thickness in step part to uniformly grow a crystal by disposing a main target electrode to face a substrate and disposing auxiliary target electrodes in the positions where the electrodes face the step part. CONSTITUTION:The main target electrode 7 is disposed in the position where the electrode substantially faces the flat part of the substrate 10 surface and the auxiliary target electrodes 8, 8' are disposed in the positions where the electrodes substantially face the step part in a vacuum vessel 6. The film is formed by the electrode 7 and thereafter the film formation by the electrodes 8, 8' is successively or simultaneously executed. The principal component of the sputter particles to the substrate 10 come from the vertical direction according to the above-mentioned constitution and therefore the film thickness to the step part is thoroughly assured.

10. 发明专利

JPS61117356A Lining structure and method of building concrete 失效
标题翻译：建筑混凝土的内部结构和方法
公开(公告)号：JPS61117356A
公开(公告)日：1986-06-04
申请号：JP23662084
申请日：1984-11-12
申请人： Hitachi Ltd
发明人： YAMASHITA YOSHIHIRO , NAKAGAWA YUKIO , ITO TADASHI
IPC分类号： G21C13/00 , E04B1/76 , E04F13/08 , E04F13/21
CPC分类号： Y02A30/247 , Y02E30/40

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