专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS617665A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS617665A
公开(公告)日：1986-01-14
申请号：JP12749184
申请日：1984-06-22
申请人： Hitachi Ltd , Nippon Telegr & Teleph Corp
发明人： KIMURA TADAKATSU , INABE YASUNOBU , SUGAWARA YOSHITAKA , KITANO JIYUNJIROU
IPC分类号： H01L29/74 , H01L29/747 , H01L29/749 , H03K17/567 , H03K17/73
CPC分类号： H03K17/567
摘要： PURPOSE:To form monolithic structure, and to insulate a control section and a main driving section in a DC manner while reducing control currents by controlling a current control type bipolar element by a voltage control type unipolar semiconductor element. CONSTITUTION:A base n1 in a current control type pnp bipolar transistor (pnp Tr) 8 and a collector n2 in an npn Tr9 are connected, and a collector p2 in the Tr8 and a base p3 in the Tr9 are connected. A source and a drain p4, p5 in a p channel MOSFET are connected to an emitter p1 and the collector p2 in the Tr8 so as to short-circuit a collector junction n1-p2, and a drain and a source n5, n6 in an n-channel MOSFET 11 are connected to the collector n2 and a emitter n6 in the Tr9 so as to short-circuit a collector junction n2-p3. When a switch 1 is closed, conduction can be realized in either case regardless of the relationship of potential at terminal G1, G2 and terminals A1, B1. Only displacement currents required for charging and discharging gate capacitance may be used as control currents, and they may take an extremely small value.
摘要翻译：目的：通过电压控制型单极半导体元件控制电流控制型双极性元件，形成单片结构，并以DC方式绝缘控制部和主驱动部，同时减少控制电流。构成：电流控制型pnp双极晶体管（pnp Tr）8中的基极n1和npn Tr9中的集电极n2连接，Tr8中的集电极p2和Tr9中的基极p3连接。 ap沟道MOSFET中的源极和漏极p4，p5连接到Tr8中的发射极p1和集电极p2，以使集电极结n1-p2短路，并且在n中的漏极和源极n5，n6 沟道MOSFET11连接到集电极n2和Tr9中的发射极n6，以使集电极结n2-p3短路。当开关1闭合时，无论在端子G1，G2和端子A1，B1处的电位的关系如何，都可以实现导通。只有充电和放电栅极电容所需的位移电流可以用作控制电流，并且它们可能具有非常小的值。

2. 发明专利

JPS60217708A CURRENT AMPLIFIER CIRCUIT 失效
公开(公告)号：JPS60217708A
公开(公告)日：1985-10-31
申请号：JP7283984
申请日：1984-04-13
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： KITANO JIYUNJIROU , OOHIGATA ICHIROU , HAYASHI TOSHIO , KAWARADA KUNIYASU
IPC分类号： H03F3/343 , H03F3/34
摘要： PURPOSE:To prevent a substrate from being affected by the PN separation bonding process by providing a substrate current compensating circuit having the same characteristic as the leakage characteristic of a main current amplifier circuit to the pre-stage of the main current amplifier circuit. CONSTITUTION:The main current amplification circuit 8 has a characteristic where a part of an input current leaks to the substrate 1, the said characteristic is attained by two lateral PNP transistors (TRs) Q1, Q2, and when lateral PNP TRs of the same characteristic as that of the TRs Q1, Q2 are used as a TRQ8 of a substrate current compensating circuit 7, since the current to the TRs Q3 is nearly equal to the current to the TRs Q1, Q2, the leakage current of the TRQ8 to the substrate 1 is nearly equal to that of the TRs Q1, Q2 and the more the current amplification factor R2/R1 is increased, the less the effect of the leakage current ISUB to the substrate 1 becomes.

3. 发明专利

JPS58101559A CURRENT SUPPLY CIRCUIT 失效
公开(公告)号：JPS58101559A
公开(公告)日：1983-06-16
申请号：JP20016281
申请日：1981-12-14
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： TOKUNAGA MICHIO , KITANO JIYUNJIROU , KAWARADA KUNIYASU , HAYASHI TOSHIO
IPC分类号： H04M19/00
摘要： PURPOSE:To set an output inpedance of a current supply circuit arbitrarily, by providing a current amplifier for current supply controlled with a voltage applied to a load, between the power supply and a load of such as a subscriber line. CONSTITUTION:A load Rl of such as subscriber line connected with a telephone set is supplied of current from a power supply E1 via current amplifiers 41, 42 for current supply. Driving current amplifiers 51, 52 receive current from a current supply circuit 7 to amplify the current flowing to an output voltage detector 6 and to control the amplifiers 41, 42. This circuit can set the equivalent DC internal resistance to an arbitrary value. e.g., zero through the selection of circuit constants, such as currnt amplification factor beta1, and resistance ratio of a resistor R4 to R51, R52, a differential output impedance is increased and the on/off of supply current is executed through the switching of a switch S.

4. 发明专利

JPS5890817A SIGNAL TRANSMISSION CIRCUIT 失效
公开(公告)号：JPS5890817A
公开(公告)日：1983-05-30
申请号：JP18796781
申请日：1981-11-24
申请人： NIPPON TELEGRAPH & TELEPHONE , NIPPON ELECTRIC CO , HITACHI LTD , OKI ELECTRIC IND CO LTD , FUJITSU LTD
发明人： HAYASHI TOSHIO , KAWARADA KUNIYASU , UEKI ISAMU , KITANO JIYUNJIROU , TAWARA TOSHIYUKI , TAKADA KENZOU
IPC分类号： H04L25/02 , H03H11/02 , H03H11/38
摘要： PURPOSE:To attain high-density circuit integration, by constituting a coupling circuit with two current mirror circuits. CONSTITUTION:When a signal Sa is outputted through an output terminal 3a from a circuit A, a current flows to a closed loop of power supply 6a common terminal 5a an output terminal 3a of the circuit A a coupling circuit M a power supply 6a, and flows through an input terminal 2c and a common terminal 5c of a current mirror circuit Ha in the coupling circuit. Then, the current flows to a path of power supply 6b 5c of current mirror circuit Hb 2c of current mirror circuit Hb, and a signal current flows from an output terminal 3c of the current mirror circuit Hb to a circuit B. Thus, two circuits driven with different power supplies having different ground points can be coupled.

5. 发明专利

JPS5637762A GROUNDDFAULT DETECTING CIRCUIT 失效
公开(公告)号：JPS5637762A
公开(公告)日：1981-04-11
申请号：JP11280579
申请日：1979-09-05
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： KITANO JIYUNJIROU , TAKESHITA TETSUO , OIKAWA YOSHINORI
IPC分类号： H04M3/22 , H02H3/32 , H04M3/30 , H04Q3/72
摘要： PURPOSE:To obtain a ground-fault detecting circuit suited for formation of the semiconductor integrated circuit, by generating the voltage proportional to the battery line current based on the reference voltage set previously and then comparing the voltage with the voltage proportional to the ground current. CONSTITUTION:When the hook switch of the telephone TEL is turned on, the loop current flows from the ground G' and via the ground line B, TEL, battery line A and battery VBB each. And if the line A has a ground-fault with the resistance RG' due to occurrence of the fault, the ground current flows in addition to the loop current. And thus the battery line current IA becomes larger than the ground line current IB. The current/voltage converting circuit consisting of the transistor TrQ0 and resistances R10 plus R11 generates the voltage proportional to the current IA via the base of the TrQ1 and based on the reference power source VREF. And the voltage proportional to the current IB is generated at the base of the TrQ2 via the resistance R10'. The TrQ1 and Q2 from the voltage comparator. And when the current IA becomes larger than the current IB by the source VREF and by an amount equivalent to the current value set previously, the TrQ1 is turned on to give an inversion to the output of the voltage comparator. Thus the ground-fault detection is carried out.

6. 发明专利

JPS54162481A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS54162481A
公开(公告)日：1979-12-24
申请号：JP7093778
申请日：1978-06-14
申请人： HITACHI LTD
发明人： OKUHARA SHINJI , KITANO JIYUNJIROU
IPC分类号： H03K17/732 , H01L21/331 , H01L29/73 , H01L29/74
摘要： PURPOSE:To obtain a switch which is high in dielectric strength in both positive and negative directions and has a small voltage drop by employing PNPN four-layer constitution with electrodes arrayed horizontally by using mutually-complementary PNP and NPN transistors. CONSTITUTION:On P-type semiconductor substate 21, PNP transistor Tr consisting of emitter region 24, base region 22, and collector regions 25 and 27 and NPNTr of emitter region 26, base region 25 and collector region 22 are both provided, thereby forming a PNPN semiconductor switch of regions 24, 22, 25, and 26. In this constitution, the 2nd collector of PNPTr surrounds emitter 24 and the 1st collector 25 is surround ed with emitter 24. Almost all current of PNPTr flows through collector region 27 and the flow from one collector 25 to base 25 of NPNTr is a little, so that the switch can be cut off by externally absorbing this current from gate G of PNPN switch. Further, the base-collector junction of PNPTr has large dielectric strength.

7. 发明专利

JPS5460551A SEMICONDUCTOR SWITCH 失效
公开(公告)号：JPS5460551A
公开(公告)日：1979-05-16
申请号：JP12685977
申请日：1977-10-24
申请人： HITACHI LTD
发明人： OKUHARA SHINJI , KITANO JIYUNJIROU
IPC分类号： H02M1/08
摘要： PURPOSE:To secure easy cut-off of the load current by giving a connection between the main swtich circuit containing PNPN switch and the secondary switch circuit containing the second PNPN switch which converts part of the switch current of the main switch circuit to the anode current. CONSTITUTION:Diode 2 is connected to the cathode of first PNPN switch 1 in which first gate terminal G1 is combined with the gate, and effecitve cathode terminal K is provided to constitute main switch circuit MS. Then second gate terminal G2 is connected to the gate of second PNPN switch 3 to form the secondary switch circuit. The MS conducts with injection of the pulse into terminal G1 when anode terminal A and terminal K are connected to the load circuit. And with injection of the pulse into terminal G2 at the conduction time, switch 3 has ignition to short-circuit between terminal G1 and K and thus to cut off switch 1. Accordingly, no anode current exists at switch 3, thus cutting off the full circuit.

8. 发明专利

JPS60259014A VARIABLE RESISTANCE CIRCUIT 失效
公开(公告)号：JPS60259014A
公开(公告)日：1985-12-21
申请号：JP11461884
申请日：1984-06-06
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： ARITA KAORU , KITANO JIYUNJIROU , OOHIGATA ICHIROU
IPC分类号： H03H11/24 , H03H11/46
摘要： PURPOSE:To set an optional resistance value between two terminals without grounding one end by allowing a differential voltage detecting circuit whose detecting sensitivity is adjusted to detect a potential difference between the two terminals and applying this output to the two terminals respectively via a variable current circuit. CONSTITUTION:The 1st constant current circuit is constituted of operational amplifiers 11, 12 and a resistor 8 and the 2nd constant current circuit is constituted of operational amplifiers 13, 14 and a resistor 9. An output 5 detected by an operational amplifier 10 is fed to an inverting input of the operational amplifier 11 and a non-inverting input of the operational amplifier 13, and since the detected output 5 is in response to the potential difference between the 1st terminal 1 and the 2nd terminal 2, a current in response to the potential difference between both the terminals 1 and 2 flows from the 1st and 2nd terminals 1, 2 to the resistors 8, 9 in opposite direction so as to form an equivalent resistor. The resistance value is set optionally by adjusting the control voltage 15 from a variable voltage source 16 so as to control the detection sensitivity of the operational amplifier 10.

9. 发明专利

JPS59161194A Signal transferring circuit 失效
标题翻译：信号传输电路
公开(公告)号：JPS59161194A
公开(公告)日：1984-09-11
申请号：JP3458683
申请日：1983-03-04
申请人： Hitachi Ltd , Nippon Telegr & Teleph Corp
发明人： KITANO JIYUNJIROU , OOHIGATA ICHIROU , HAYASHI TOSHIO , KIMURA TADAKATSU
IPC分类号： H04Q3/42 , H04M19/00 , H04Q3/72
CPC分类号： H04M19/005
摘要： PURPOSE:To transfer a signal with high accuracy even in case when a line resistance is large by constituting so that a current distortion generated by a voltage detector is cancelled by a voltage generator. CONSTITUTION:In a voltage/current converting circuit by a resistance RB and a current mirror 5, a current distortion is generated due to non-linearity of an input resistance of the current mirror 5. A signal current containing this distortion is inputted to a current/voltage converting circuit 9 consisting of a transistor TR9 and the resistance RE through a current mirror 7. A mirror ratio of the current mirrors 5, 7 is all set to ''1'', the resistance RE and RB are set to the same resistance, and when the TR9 and an input TR of the current mirror 5 use those of the same shape, non-linearity of the input of the current mirror 5 and non-linearity between the base and the emitter of the TR9 become almost equal, therefore, the current distortion generated by the current mirror 5 is cancelled by the TR9. The same way is formed between a current mirror 6 and a TR8, as well.
摘要翻译：目的：即使在线电阻大的情况下，即使通过电压发生器抵消由电压检测器产生的电流失真，也能高精度地传递信号。构成：在由电阻RB和电流镜5构成的电压/电流转换电路中，由于电流镜5的输入电阻的非线性而产生电流失真。包含该失真的信号电流被输入到电流电压转换电路9由晶体管TR9和通过电流镜7的电阻RE组成。电流镜5,7的镜面比例全部设为“1”，电阻RE和RB被设定为相同并且当TR9和电流镜5的输入TR使用相同形状时，电流镜5的输入的非线性和TR9的基极和发射极之间的非线性几乎相等，因此，由电流镜5产生的电流失真被TR9消除。也可以在电流镜6和TR8之间形成相同的方式。

10. 发明专利

JPS589524A VOLTAGE DETECTING CIRCUIT 失效
公开(公告)号：JPS589524A
公开(公告)日：1983-01-19
申请号：JP10555181
申请日：1981-07-08
申请人： NIPPON TELEGRAPH & TELEPHONE , HITACHI LTD
发明人： HAYASHI TOSHIO , SUZUKI MASAYOSHI , SAGAWA AKIO , KITANO JIYUNJIROU
IPC分类号： G01R19/165 , H02H3/20

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式