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1. 发明专利

JP2002280362A MANUFACTURING METHOD AND APPARATUS OF SEMICONDUCTOR 失效
公开(公告)号：JP2002280362A
公开(公告)日：2002-09-27
申请号：JP2001077522
申请日：2001-03-19
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： KAWADA HIROKI , KANZAKI NAOTO , KITSUNAI HIROYUKI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing device of a semiconductor, capable of accurately calibrating the sensitivity fluctuations of manometer by pressure fluctuation, measuring accurate pressure in various pressure ranges and performing a manufacturing processing. SOLUTION: At periodical inspections, the inside of the manometer 106 and a processing chamber 102 is evacuated and turned to a high vacuum state which is equal to or below the measurement sensitivity of the manometer 106. The zero point of the manometer 106 is corrected, a valve 101 is opened and an inactive gas is introduced to the processing chamber 100. The pressure is measured by the monometer 106, and introduction of 12 Pa is performed. The valve 101 or the like is closed, the processing chamber 102 is evacuated to the high-vacuum state and the valve 105 is closed completely. Then, the valve 107 is opened and the gas sealed inside the manometer is discharged into the processing chamber 102. The pressure at the time is measured by the manometer 106, and a sensitivity degradation coefficient k in a prescribed calibration formula is calculated from the volume or the like of the processing chamber 102 and a measured value. The measured value to be sent from the manometer 106 to a system controller 110 is calibrated by using the prescribed calibration formula, the value is defined as a true value and the pressure inside the processing chamber 102 is controlled.

2. 发明专利

JP2000269182A METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000269182A
公开(公告)日：2000-09-29
申请号：JP7050699
申请日：1999-03-16
申请人： HITACHI LTD
发明人： KAWADA HIROKI , KITSUNAI HIROYUKI , YAMANE MIYUKI , SUZUKI SHINICHI , KATSUYAMA MASANORI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a manufacturing apparatus of semiconductor devices which enables analysis of state of gas adsorbed on the surfaces inside a dry etching device, without having to open to the air, and removal of adsorbed substances before release into the air. SOLUTION: An impinging gas analysis device 102 is fitted to the lateral side of a treatment chamber 101, and gas or the like is sampled. A sample 103 for inspecting the state of adsorption of the gas being provided in the treating chamber 101, infrared light from an infrared light introducing window 104 is irradiated on the sample 103 to measure a reflection-absorption spectrum, and thereby the state of an adsorbed residual gas in the treating chamber 101 is monitored. Microwave from a microwave introducing tube 107 generates a plasma, and thereby the surface of a wafer 105 is etched. The infrared light reflected on the sample 103 is detected by a detector or the like, and the analyzing device 102 executes mass analysis or the like of gas molecules or the like. Detailed information is obtained in a process, without having to open the treating chamber to the air, and a method for preventing generation of poisonous gas after the opening to the air can be found out easily without superfluous trial and errors.

3. 发明专利

JPH06268763A TELEPHONE SET 失效
公开(公告)号：JPH06268763A
公开(公告)日：1994-09-22
申请号：JP4917393
申请日：1993-03-10
申请人： HITACHI LTD
发明人： KAWADA HIROKI , SATOU KAZUYASU , TAJIMA FUJIO , EJIRI MASAKAZU
IPC分类号： G06F17/30 , H04B7/26 , H04M11/00 , H04W88/02
摘要： PURPOSE:To receive a facsimile signal on a street, and to show picture information by projecting it on a wall, etc. CONSTITUTION:In a telephone set to transmit and receive the facsimile signal through a communications means (telephone part) 11, the communications means 11 is equipped with a signal receiving part 16 for the facsimile signal, a picture generating part 12 to generate picture information by converting the facsimile signal, and a projecting part 14 to project the picture information. Since the picture information need not be printed on a sheet of paper, resource conservation can be attained, and in addition, a device can be miniaturized and lightened in its weight.

4. 发明专利

JPH05139882A MOLECULAR BEAM SOURCE 失效
公开(公告)号：JPH05139882A
公开(公告)日：1993-06-08
申请号：JP30451591
申请日：1991-11-20
申请人： HITACHI LTD
发明人： KAWADA HIROKI , TAKAHASHI NUSHITO
IPC分类号： C23C14/26 , C30B23/08 , H01L21/203
摘要： PURPOSE:To stabilize the intensity distribution of molecular beams generated from a molecular beam source irrespective of the amount of the raw material packed, leading to improving the reproducibility of such molecular beams. CONSTITUTION:A cover 3 with holes 4 is put on a crucible 1 for a molecular beam source. A heater 5 is provided inside the cover 3 or on its surface to heat and evaporate a raw material for molecular beams. In case plural covers 3 are used, the holes 4 are made not to coincide with each other so that the raw material is not to be seen from the outside of the crucible 1. Thereby, cohesion will not developed by the molecular beams with no cloggings of the holes, thus stabilizing the molecular beam distribution. Furthermore, deposits due to e.g. Ga cohesion can be reduced, and flaws developed on a film can therefore be decreased.

5. 发明专利

JPH0477388A MOLECULAR BEAM SOURCE 失效
公开(公告)号：JPH0477388A
公开(公告)日：1992-03-11
申请号：JP19053590
申请日：1990-07-20
申请人： HITACHI LTD
发明人： KAWADA HIROKI , TAKAHASHI NUSHITO , UEDA SHINJIRO
IPC分类号： C30B23/08 , H01L21/203
摘要： PURPOSE:To suppress deposition of material on the area near the aperture and to reduce defects appearing in a molecular beam epitaxial film by increasing the heat shielding rate for the exit area of a crucible than for the other area. CONSTITUTION:A crucible 13 provided with a wire heater 14 around the aperture is disposed in a casing 15 of the molecular beam source. This crucible 13 is filled with the source material 12 and surrounded with three heat shield plates 11 having different height along the axis of the crucible 13 so that the heat shielding rate is larger than the other area. The crucible 13 is covered and pressed with a cap 16.

6. 发明专利

JPS6483598A APPARATUS FOR MOLECULAR BEAM EPITAXY 失效
公开(公告)号：JPS6483598A
公开(公告)日：1989-03-29
申请号：JP24073487
申请日：1987-09-28
申请人： HITACHI LTD
发明人： KAWADA HIROKI , TAKAHASHI NUSHITO , TAKAHASHI KUNIHIRO , FUJIOKA KAZUMASA , YAMAMOTO YOSHIHIKO
IPC分类号： C30B23/08 , H01L21/203
摘要： PURPOSE:To obtain a crystal of excellent film quality having a fine and minute structure, by epitaxially growing the crystal on a substrate while controlling molecular beam intensity through a specific molecular counting system and temperature controller for molecular beam sources. CONSTITUTION:A substrate 5 installed in a vacuum chamber 6 is irradiated with molecular beams from molecular beam sources 3 and the number of molecules of molecular beams irradiated on a molecular beam sensor 1 is simultaneously counted by a molecular counter 7 of a molecular counting systems 8 to measure the molecular beam intensity. Thereby the molecular beam intensity is stably and accurately controlled by a temperature controller 2 for the molecular beam sources and heater power source 4 for the molecular beam source for a long period to epitaxially grow a high-quality crystal.

7. 发明专利

JP2008116472A Pattern inspection method 审中-公开
标题翻译：模式检验方法
公开(公告)号：JP2008116472A
公开(公告)日：2008-05-22
申请号：JP2008000391
申请日：2008-01-07
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： YAMAGUCHI ATSUKO , FUKUDA HIROSHI , TSUCHIYA RYUTA , KAWADA HIROKI , YONEDA SHOZO
IPC分类号： G01B15/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection method for inspecting a pattern by extracting an edge shape of the pattern from an image acquired by a scanning microscope, and by predicting an electric performance of a device from the extracted information. SOLUTION: The intensity distribution of reflected electrons or secondary electrons 1609 is processed in a control part 1611 of the scanning electron microscope and an inspection computer 1612, and the distribution of the gate length in a single gate is determined from the data of the edge position. A transistor performance is predicted by regarding a transistor produced finally as parallel connection of a plurality of transistors having various gate lengths, and the quality or the grade of the pattern is determined based on the prediction results. Hereby, the effect on a device performance of edge roughness can be predicted quickly and highly accurately, and the pattern inspection can be performed efficiently and highly accurately corresponding to a device specification. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过从由扫描显微镜获取的图像中提取图案的边缘形状并通过从提取的信息预测装置的电性能来检查图案的图案检查方法。解决方案：反射电子或二次电子1609的强度分布在扫描电子显微镜的控制部分1611和检查计算机1612中进行处理，并且从单个栅极中的栅极长度的分布由边缘位置。通过将最终产生的晶体管作为具有各种栅极长度的多个晶体管的并联产生来预测晶体管性能，并且基于预测结果确定图案的质量或等级。因此，可以快速，高精度地预测对边缘粗糙度的器件性能的影响，并且可以根据器件规格高效且高精度地执行图案检查。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2004251743A Pattern inspection method 有权
公开(公告)号：JP2004251743A
公开(公告)日：2004-09-09
申请号：JP2003042116
申请日：2003-02-20
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： YAMAGUCHI ATSUKO , FUKUDA HIROSHI , TSUCHIYA RYUTA , KAWADA HIROKI , YONEDA SHOZO
IPC分类号： G01B15/00 , G01B15/04 , G01B15/08
CPC分类号： G01B15/04 , G01B15/08
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspection method for inspecting a pattern by extracting an edge shape of a pattern from an image acquired by a scanning microscope, and by predicting an electric performance of a device from the extracted information. SOLUTION: The intensity distribution of reflected electrons or secondary electrons 1609 is processed in a control part 1611 of the scanning microscope and by an inspection computer 1612, and the distribution of the gate length in a single gate is determined from data of the edge position. A transistor performance is predicted by regarding a transistor produced finally as parallel connection of a plurality of transistors having various gate lengths, and the quality or the grade of the pattern is determined based on the prediction result. Hereby, the influence on a device performance of edge roughness can be predicted quickly and highly accurately, and pattern inspection can be performed efficiently and highly accurately corresponding to a device specification. COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2001257197A MANUFACTURING METHOD AND MANUFACTURING DEVICE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001257197A
公开(公告)日：2001-09-21
申请号：JP2000066413
申请日：2000-03-10
申请人： HITACHI LTD
发明人： KAWADA HIROKI , YAMANE MIYUKI , YAMASHITA MANABU , NORITOMI TOYOSHIGE , KOJIMA MASAYUKI
IPC分类号： C23C14/34 , C23C16/455 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and a device which can monitor such a progress and so on of chemical reaction used at a semiconductor manufacturing process in a high precision and can perform at a practical cost. SOLUTION: A manufacturing method for a semiconductor device include a process of performing a process of a wafer 102 by a processing gas which is introduced into a processing chamber, by using a device which is provided with the processing chamber 101, a pump 109 which performs exhausting associated with the processing at the processing chamber, and a flow variable valve 105 for adjusting a flow of exhausting gas flowing through the pump. In the manufacturing method, a mass spectrometry gas analyzer 107 is connected between the pump and the flow variable valve, exhausting gas is analyzed under the condition of a pressure of the exhausting gas which is introduced into the gas analyzer being adjusted in a predetermined range, and process controlling for the wafer processing is performed, based upon the analyzed result.

10. 发明专利

JPH0713120A MULTI-FUNCTION PROJECTOR DEVICE 失效
公开(公告)号：JPH0713120A
公开(公告)日：1995-01-17
申请号：JP15854193
申请日：1993-06-29
申请人： HITACHI LTD
发明人： OKI KATSUO , OHARA SHUNICHI , HAGIWARA NORIAKI , SATOU KAZUYASU , EJIRI MASAKAZU , KOBARI TOSHIAKI , MASUDA TOSHIO , TAJIMA FUJIO , KOYAMA KAZUHITO , UMEDA TOMOKI , KAWADA HIROKI , KOIDE AKIRA
IPC分类号： G02F1/13 , G03B21/132
摘要： PURPOSE:To make the size of a liquid crystal panel small, to reduce cost and to project an OHP image and a video image by constituting the device of a light source, a mirror, a rotatable panel, a projection lens group capable of sliding, and a video tape reproducing part. CONSTITUTION:In the case of projecting the picture of a liquid crystal panel 7, a light beam radiated upward from the light source 1 and a light beam radiated downward from the light source 1 are added to a light beam reflected by a reflector 2, and the light beams pass through a Fresnel lens 3 and a glass plate 4, and are reflected by the mirror 5 of a header part 10. The light beams reflected by the mirror 5 pass through the panel 7, and are enlarged and projected to a screen by a projection lens group 8a. However, a projection lens group 8b is interlocked with the panel 7, and it gets out of an optical path when the panel 7 exists on the optical path. In the case of projecting the image of an OHP sheet, the panel 7 is manually rotated in a direction (b) to get out of the optical path and the projection lens group 8b is set on the optical path.

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