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1. 发明专利

JP2013089515A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2013089515A
公开(公告)日：2013-05-13
申请号：JP2011230222
申请日：2011-10-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOBAYASHI HIROYUKI , NAGAISHI HIDEYUKI , TANDO TAKUMI , ITABASHI NAOSHI
IPC分类号： H05H1/24 , B01J19/08 , B08B7/00 , C23C16/505 , H05H1/46
CPC分类号： H01J37/32174 , B08B7/0035 , H01J37/32082 , H01J37/32155 , H01J37/32366 , H01J37/32376 , H01J37/32532 , H01J37/32541 , H01J37/32577 , H01J37/32899 , H01J2237/335
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of uniformly generating plasma without increasing the power cost per unit even when a discharge area is expanded so as to be able to cope with a sample in an arbitrary size by arraying a plurality of plasma discharge parts.SOLUTION: In a plasma processing apparatus equipped with a high frequency power supply having a high frequency signal circuit 13 and a high frequency power circuit 11, a housing 21 and a discharge electrode 2, a plasma module consists of the discharge electrode 2 and the high frequency power circuit 11 installed in the housing 21, and frequency signals are inputted from the high frequency signal circuit 13 to a plurality of plasma modules connected in parallel.
摘要翻译：要解决的问题：提供一种能够均匀地产生等离子体的等离子体处理装置，即使在放电区域扩大时也能增加单位的功率成本，以便能够通过排列任意尺寸来处理任意大小的样品多个等离子体放电部件。解决方案：在具有高频电源13和高频电源电路11，外壳21和放电电极2的高频电源的等离子体处理装置中，等离子体模块由放电电极2 和安装在外壳21中的高频电源电路11，并且将频率信号从高频信号电路13输入到并联连接的多个等离子体模块。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2006245600A Plasma processing device 有权
标题翻译：等离子体加工装置
公开(公告)号：JP2006245600A
公开(公告)日：2006-09-14
申请号：JP2006110719
申请日：2006-04-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOKOGAWA KATANOBU , ITABASHI NAOSHI , TAJI SHINICHI , MORI MASASHI , SUZUKI KEIZO , ONO TETSUO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To achieve high speed, high selecting ratio, high aspect processing and the stable etching characteristics for a long period in dry etching.
SOLUTION: In this plasma processing device, plasma is formed with the electromagnetic wave by an UHF-band power supply 104 by using electron cyclotron resonance phenomenon. Furthermore, the electromagnetic wave is emitted from a circular conductor plate 107 arranged at the position facing a sample to be processed 110. Furthermore, the material quality of the circular conductor plate 107 is made to be silicon or graphite. By forming the plasma using the UHF-band power supply 104, low-dissociation plasma can be formed even at the low gas pressure and high density, and the controllability of the reaction is improved. Furthermore, by the reaction with the plasma on the circular conductor plate 107, which also has the electromagnetic-wave emitting function, the effective active species can be increased.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在干蚀刻中实现长时间的高速，高选择率，高方位处理和稳定的蚀刻特性。解决方案：在该等离子体处理装置中，通过使用电子回旋共振现象，通过UHF频带电源104利用电磁波形成等离子体。此外，电磁波从布置在待处理样品110的位置的圆形导体板107发射。此外，圆形导体板107的材料质量被制成硅或石墨。通过使用UHF频带电源104形成等离子体，即使在低气体压力和高密度下也能够形成低离解等离子体，并且提高了反应的可控性。此外，通过与也具有电磁波发射功能的圆形导体板107上的等离子体的反应，可以增加有效的活性种类。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2003077900A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003077900A
公开(公告)日：2003-03-14
申请号：JP2001269636
申请日：2001-09-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORI MASASHI , ITABASHI NAOSHI , IZAWA MASARU
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
CPC分类号： H01L21/28123 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To provide an etching method for inexpensively working a gate electrode in the size of not more than 50 nm, which exceeds an exposure limit, with high yield. SOLUTION: The problem for thinning a resist in line with miniaturization, the problem of a lack in thinning amount due to the pull-out of a base in gate electrode thinning and the problem on the complication of a semiconductor manufacture process when special mask structure and gate structure are used are solved by using the gate electrode thinning of high resist selectivity and thinning in mask formation. Thus, the problem of foreign matters and contamination, which are main causes for dropping yield and which occur in transfers in between devices, is solved by performing a thinning process and a dry- cleaning process in a vacuum. The water absorption of halogenated hydrogen compound remaining in dry-etching is prevented. Wetting cleaning is omitted or simplified, and the problem on the drop of throughput and the increase of cleaning solution COO due to the insertion of a cleaning process is solved. Then, a dimensional inspection process or a contamination inspection process is also performed in vacuum.
摘要翻译：要解决的问题：提供一种低成本地以超过曝光极限的50nm以下的小型化的门电极的蚀刻方法。解决方案：使小型化的抗蚀剂变薄的问题，由于栅极电极变薄引起的基极的拉出缺少稀薄量的问题以及当特殊的掩模结构和半导体制造工艺的复杂化问题时使用栅极结构通过使用栅极电极薄化，掩模形成中的高抗蚀剂选择性和稀化来解决。因此，通过在真空中进行变薄处理和干式清洗处理来解决作为成品率下降的主要原因的异物和污染物的问题。防止残留在干法蚀刻中的卤化氢化合物的吸水性。润湿清洁被省略或简化，解决了由于插入清洁过程而导致的生产量下降和清洁溶液COO增加的问题。然后，还在真空中进行尺寸检查处理或污染检查处理。

4. 发明专利

JP2001053059A DRY ETCHING METHOD 失效
公开(公告)号：JP2001053059A
公开(公告)日：2001-02-23
申请号：JP22343299
申请日：1999-08-06
申请人： HITACHI LTD
发明人： KOTO NAOYUKI , ITABASHI NAOSHI , TSUTSUMI TAKASHI , FUJII TAKASHI
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To efficiently suppress side etching of a metal by constituting one molecular structure of gas contained in mix gas only of C and H and giving the bond of C and C in the molecule structure of gas. SOLUTION: The size of side etching is a difference between the average value C of the width E of an upper end part in a lower TiN layer 3 and the width B of a lower end in an upper TiN layer 1, and the width D of the thinnest part except for the upper end part of an Al-Cu-Si layer 2. Since the formation efficiency of CClX is higher in ethane, ethylene and acetylene, which have C-C bond, compared to methane which does not have C-C bond in molecular structure, side etching is small. Even in gas with C-C bond, side etching is less in the ethylene of double bond compared to the ethane of single bond and side etching is less in the acetylene of triple bond compared as the ethylene of double bond.

5. 发明专利

JPH08213363A SURFACE TREATMENT METHOD AND EQUIPMENT 失效
公开(公告)号：JPH08213363A
公开(公告)日：1996-08-20
申请号：JP1668395
申请日：1995-02-03
申请人： HITACHI LTD
发明人： YAMAMOTO SEIJI , ITABASHI NAOSHI , MOCHIJI KOZO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a method and an equipment for forming very fine structure at an arbitrary position on a solid surface, with high reproducibility. CONSTITUTION: An irradiation part for the surface of a specimen consists of a generating part of polyions, an ion leading-out part provided with an ion deccelerator 111, an ion capturing part 108, and an ion lens system 110. Thereby uniform surface structure can be formed with high precision, without using a mask. Large contribution to the development of a basic field like electronics which deals semiconductor and various kinds of storage material (memory) is realized.

6. 发明专利

JPH07280755A SURFACE ANALYZING METHOD 失效
公开(公告)号：JPH07280755A
公开(公告)日：1995-10-27
申请号：JP7686894
申请日：1994-04-15
申请人： HITACHI LTD
发明人： MOCHIJI KOZO , ITABASHI NAOSHI , YAMAMOTO SEIJI
IPC分类号： G01N23/225 , G01N23/227
摘要： PURPOSE:To analyze the types and bonding states of atoms in the outermost layer of a specimen surface by radiating multivalent ions so ionized as to have an aiming valence to the specimen while decreasing the speed of the ions. CONSTITUTION:A Si substrate (specimen) 101a is cleaned and put in a specimen chamber 103 of a multivalent ion excitation Auger electron spectroscopic measurement apparatus 102 and the specimen chamber 103 is evacuated. A gate valve 104 between the specimen chamber 103 and a multivalent ion valence separating part (Wien filter) 109 is opened and multivalent ions 5 are radiated to the surface of the specimen 101a. The kinetic energy distribution of the electrons 111 radiated out of the surface of the specimen 101a by radiation of the ions 105 is measured by an electron energy analyzer 112. Since the ions 105 have a large size as compared with light and electrons, in the case the ions are radiated at prescribed decreased speed, the ions can not enter the inside of the surface and react only with the outermost layer of the surface and Auger electrons, etc., are radiated only out of the atoms in the outermost layer of the surface. The types and bonding states of the atoms in the outermost layer of the surface can be thus analyzed by measuring the atoms.

7. 发明专利

JP2015057079A 培養器材有权
标题翻译：文化基层
公开(公告)号：JP2015057079A
公开(公告)日：2015-03-26
申请号：JP2014264355
申请日：2014-12-26
申请人：株式会社日立製作所 , Hitachi Ltd
发明人： TAKAHASHI RYOSUKE , HISADA AKIKO , SONODA HIROSHI , SAITO HIROSHI , ITABASHI NAOSHI , YAMAMOTO JIRO
IPC分类号： C12M3/00
摘要：【課題】培養器材表面に化学物質を塗布することなく、直径の揃った三次元組織を形成させる技術を可能にする培養シートを提供する。【解決手段】培養器材の培養シート150上に、複数のホール152が形成され、各々のホール152の底面である培養面には、細胞の接着性や遊走性を制御できるナノピラー153が形成される。各ホール151の培養面は、仕切り壁152を設けた構造となり、且つ内部のナノピラー153は、各ホール151の中心付近に形成されているため、播種された細胞の相互作用を制限することができ、形成される細胞の三次元構造の大きさを均一にすることが可能となる。【選択図】図15A
摘要翻译：要解决的问题：提供一种培养片，其能够使细胞形成具有均匀直径的三维组织，而不将化学物质施加到培养基材的表面。解决方案：在培养片上形成多个孔151 150的培养基和能够控制细胞的粘附性和迁移性的纳米柱153形成在作为各孔151的底面的培养面上。各孔151的培养面具有在其中设置有分隔壁152的结构，并且每个孔内的每个孔内的纳米柱153形成在每个孔151的中心附近，这使得可以限制接种的电池之间的相互作用并且使三维结构的尺寸均匀化种子细胞形成。

8. 发明专利

JP2002025977A DRY-ETCHING METHOD 失效
公开(公告)号：JP2002025977A
公开(公告)日：2002-01-25
申请号：JP2000210702
申请日：2000-07-06
申请人： HITACHI LTD
发明人： MORI MASASHI , ITABASHI NAOSHI , TSUJIMOTO KAZUNORI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a dry-etching method capable of obtaining wafers having stable performance even if a plurality of the wafers are subjected to processing in a case of etching a laminated gate and ensuring the same result with a case of using actual wafer samples even when dummy wafers are used in a continuous test. SOLUTION: When a plurality of wafers are successively subjected to etching for forming multilayered film gates formed of metal and poly-Si different from each other in reactivity, the amount of an Si reaction product is properly regulated in an etching condition that is just previously set, by which a dimensional shift is restrained from occurring between a first wafer and a second wafer in an etching process. When Si dummy wafers are used in a continuous test, the amount of a reaction product is regulated in a dummy wafer etching condition, by which actual samples subjected to etching just after the dummy Si wafers can be processed without incurring a dimensional shift, so that expensive actual samples to prepare can be decreased in number.

9. 发明专利

JP2000188283A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2000188283A
公开(公告)日：2000-07-04
申请号：JP36407198
申请日：1998-12-22
申请人： HITACHI LTD
发明人： MORI MASASHI , KOTO NAOYUKI , ITABASHI NAOSHI , TSUJIMOTO KAZUNORI , TAJI SHINICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To enable a semiconductor manufacturing device using UHF-zone ECR plasma to perform such axially symmetric etching on a wafer such that the center axis of the distribution of the plasma coincides with the center of a wafer. SOLUTION: The interval between an inner tube 118 and a vacuum vessel 107 is evenly adjusted to =3 mm along the periphery of the tube 118. Alternatively, the capacitance C of the inner tube 118 is reduced, by adjusting the thickness of the tube 118 to >=8 mm in order to suppress the influence of the interval between the tube 118 and vessel 107.

10. 发明专利

JPH09266199A METHOD AND APPARATUS FOR EVALUATING PLASMA 失效
公开(公告)号：JPH09266199A
公开(公告)日：1997-10-07
申请号：JP7585796
申请日：1996-03-29
申请人： HITACHI LTD
发明人： ITABASHI NAOSHI , YOKOGAWA KATANOBU , TAJI SHINICHI , YAMAMOTO SEIJI
IPC分类号： G01N27/62 , C23F4/00 , G01N21/27 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
摘要： PROBLEM TO BE SOLVED: To evaluate a plasma for machining works by accurately analyzing the electrons, ions, neutral particles and lights incident on a substrate as well as temp., potential and current on the substrate in the same condition as the substrate being worked, thereby obtaining the mutual relations of them. SOLUTION: Ion detection elements 102, light detection elements 103, temp. detection elements 104, and current detection elements 105 are disposed on a substrate 101 covered with an insulation film to enable the analysis of the density and energy of incident ions film, spectroscopic analysis and evaluation of the distribution. Thus such various analyzing units are mounted on the substrate to enable the accurate evaluation of the property of a plasma for machining works in the same condition as the actual settings of substrates to be worked. Thus it is possible to attain the development, improvement and control of the processes and apparatus according to reliable guidances which were made cut and try as before.

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