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1. 发明专利

JPH0831831A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0831831A
公开(公告)日：1996-02-02
申请号：JP16083594
申请日：1994-07-13
申请人： HITACHI LTD
发明人： HIROKAWA JUN , YOSHIDA IKUO , UDA TAKAYUKI
IPC分类号： H01L21/60 , H01L21/321
摘要： PURPOSE:To make needless a BLM layer forming apparatus, facilities or special material therefor by using the same material as a part of the material for making component elements of an electric interconnection layer as Y material for a BLM layer to be formed on a part of this layer. CONSTITUTION:After forming an electric interconnection layer 5 electrically connected to a lower electric interconnection layer through contact holes, an insulation film 6 e.g. SiN film on a substrate 1 by the CVD method. After forming e.g. a Ti-W alloy layer 8 contg. W about 40at% on the substrate 1, a Pt layer 9 is deposited on its surface. To form both layers 8 and 9, the electric interconnection layer forming technology using the CVD apparatus or sputtering apparatus, vapor deposition apparatus etc. This makes needless, an independent apparatus and facilities for forming a BLM layer and special material therefor, thereby reducing the production cost.

2. 发明专利

JP2002057152A MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002057152A
公开(公告)日：2002-02-22
申请号：JP2000242238
申请日：2000-08-10
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , SATO MASAYUKI , HIROKAWA JUN , HORIUCHI MITSUAKI
IPC分类号： H01L23/52 , H01L21/314 , H01L21/3205 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a technique which can improve humidity resistance of a semiconductor device. SOLUTION: After a metallic layer 8a, which constitutes a part of a foundation metal BLM for a CCB bump, is processed by using a resist pattern 13 as a mask, a hydrophobic fluoride layer 12 is formed by plasma processing using fluorine gas in a surface of a PIQ film 9b while leaving the resist pattern 13. Thereby, it is possible to prevent water and humidity out of circumference from permeating into the PIQ film 9b.

3. 发明专利

JPH06188284A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH06188284A
公开(公告)日：1994-07-08
申请号：JP33847992
申请日：1992-12-18
申请人： HITACHI LTD
发明人： HIROKAWA JUN , TANAKA TAMOTSU , YOSHIDA IKUO , UDA TAKAYUKI , SATO TOSHIHIKO , HAYASHIDA TETSUYA , ISHIDA TAKASHI
IPC分类号： H01L21/60 , H01L21/321
摘要： PURPOSE:To improve connection reliability on the interface between CCB solder and an intermetallic compound formed on BLM by using Ni for the BLM in a CCB connection. CONSTITUTION:This is a semiconductor integrated circuit being provided with the structure face-down bonding a semiconductor chip through a CCB solder bump where an aluminum conductor wiring (inner wiring) 12 is formed through an insulating film 11 consisting of SiO2. Further, this is a semiconductor integrated circuit device to be composed of a semiconductor chip 10 where a surface protective insulating layer (electric insulating layer) 13 is formed, BLM 17 coming in contact with the aluminum conductor wiring (inner wiring) 12, and consisting of a CR layer 14, an Ni-28 atomic % Cu alloy layer 15 and an Au layer 16, and CCB solder 1A consisting of Pb 18 and Sn 19 while connecting to BLM 17.

4. 发明专利

JP2000332116A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000332116A
公开(公告)日：2000-11-30
申请号：JP14263399
申请日：1999-05-24
申请人： HITACHI LTD
发明人： HIROKAWA JUN , IMASU SEISHI , KIKUCHI HIROSHI , ANDO HIDEKO , YOSHIDA IKUO
IPC分类号： H01L21/82
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a fuse constituting part of a redundancy circuit. SOLUTION: The base metal BLM of a CCB bump 5 is formed on a surface protection film 10 where an inorganic insulating film 10a and a PIQ film 10b are stacked, and the fuse 8 which constitutes part of the redundancy circuit is formed only on the inorganic insulating film 10a. Further, the fuse 8 is formed of the same material with the base metal BLM, but a disconnection part 8a of the fuse 8 is formed of only one metal layer 9a of the base metal BLM.

5. 发明专利

JPH08162557A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH08162557A
公开(公告)日：1996-06-21
申请号：JP30331994
申请日：1994-12-07
申请人： HITACHI LTD
发明人： HIROKAWA JUN
IPC分类号： H01L23/04 , H01L23/48 , H01L23/50 , H05K3/34
摘要： PURPOSE: To provide a semiconductor integrated circuit device which reduces connection defect in solder connection and prevents deformation of a lead part or a lead pin. CONSTITUTION: The device comprises a main body part 2 such as a ceramic substrate whrereon a semiconductor chip 1 is mounted, a lead pin 3 which projects almost vertically to a lead pin installation surface 2a of the main body part 2 and is formed of pseudo-elastic alloy and a cap 4 which seals the semiconductor chip 1 and a peripheral part thereof. The lead pin 3 is formed thin gradually from its root to a tip thereof or is formed so that a sectional area of a tip part proximity 3a of the lead pin 3 is smaller than a sectional area of other places.

6. 发明专利

JPH07197257A THIN FILM FORMING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH07197257A
公开(公告)日：1995-08-01
申请号：JP63694
申请日：1994-01-10
申请人： HITACHI LTD
发明人： HIROKAWA JUN
IPC分类号： C23C14/35 , H01L21/203
摘要： PURPOSE:To provide a thin film forming technique for forming the film of a ferromagnetic material at a high speed even if a target is this ferromagnetic material. CONSTITUTION:This thin film forming device is composed of the target 11 which is an evaporating source, an electromagnet 13a and electromagnet 13b disposed on the rear side of this target 11 and a heater 14 for heating the target which heats the target 11. The target 11 is changed to an apparently paramagnetic material by heating the target 11 up to a Curie temp. (magnetic transition temp.) or above when the target 11 is the ferromagnetic material. Plasma is then concentrated to the front side of the target 11 by the magnetic fields formed by the electromagnet 13a and electromagnet 13b, by which the film is formed at a high speed on a substrate 12 to be formed with the film.

7. 发明专利

JPH05114655A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05114655A
公开(公告)日：1993-05-07
申请号：JP10080992
申请日：1992-04-21
申请人： HITACHI LTD
发明人： HIRAMOTO TOSHIRO , TANBA NOBUO , TANAKA TAMOTSU , HIROKAWA JUN
IPC分类号： H01L21/82
摘要： PURPOSE:To make it possible to cut easily a fuse which constitutes a part of a redundancy circuit. CONSTITUTION:A fuse 16, which constitutes a redundancy circuit formed on a semiconductor chip 7, is formed on a surface protective film 9 and made of a material identical to a base metal B of a CCB bump 6. A cutting portion of the fuse 16 consists of one metal layer of the base metal BLM.

8. 发明专利

JPH04370958A SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING SAME AND MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH04370958A
公开(公告)日：1992-12-24
申请号：JP14889391
申请日：1991-06-20
申请人： HITACHI LTD
发明人： UDA TAKAYUKI , NAKADA KENSUKE , KOBAYASHI TSUNEO , HIROKAWA JUN
IPC分类号： H01L23/12 , G01R1/04 , H01L23/14
摘要： PURPOSE:To prevent the deterioration of CCB connecting section, to improve reliability, to attain high density packaging, to enable the usage of a wafer manufacturing process and to enhance the accuracy of finishing and yield on manufacture in a semiconductor integrated circuit device. CONSTITUTION:In a semiconductor intagrated circuit device, an Si wafer 1a, which is formed of the same Si as an LSI chip 2 and in which through-holes 3 are formed, is used as a package substrate 1.

9. 发明专利

JPH10242110A METHOD AND DEVICE FOR ROTATIONAL TREATMENT 失效
公开(公告)号：JPH10242110A
公开(公告)日：1998-09-11
申请号：JP4823997
申请日：1997-03-03
申请人： HITACHI LTD
发明人： HIROKAWA JUN
IPC分类号： H01L21/306 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To obtain even results from rotational treatment in the rotationally treating process of a platy object by eliminating the uneven treatment of the central part of a rotating shaft. SOLUTION: A rotationally treating device performs cleaning and rotational drying treatment by housing a chuck 11 supported by a motor 12 for rotating substrata through a rotating shaft 11a in a port 15 and supplying a cleaning solution 14 from a nozzle 13 which the chock 11 supporting a semiconductor wafer 10 is rotated together with the wafer 10. Since a tilting mechanism composed of the tilting shaft 17 and a tilting motor 18 which tilt the whole bodies of the pot 15 and the rotating shaft 11a of the chuck 11 at a desired angle from the vertical direction is provided on the side face of the pot 15, the occurrence of uneven cleaning and uneven drying (residual solution drops) of the wafer 10 which occurs near the center of rotation of the wafer 10 is avoided by performing desired rotational treatment while the chuck 11 is inclined at a desired angle and even cleaned and dried results can be obtained in a short time.

10. 发明专利

JPH097975A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH097975A
公开(公告)日：1997-01-10
申请号：JP15576995
申请日：1995-06-22
申请人： HITACHI LTD
发明人： HIROKAWA JUN , YOSHIDA IKUO
IPC分类号： H01L21/301 , H01L21/02
摘要： PURPOSE: To obtain a semiconductor chip formed into an arbitrary planar shape by forming a resist material on a device formation surface of a semiconductor wafer in an arbitrary pattern, and etching the semiconductor wafer until it is cut down over the entire thickness following a desired pattern. CONSTITUTION: A plurality of desired devices are first formed on a wafer 13 into a circular shape for example. A resist 14 is applied on a device formation surface 13A and is dipped in an etching solution for etching. A circular shape pattern resist 14 is formed on the resulting device formation surface 13A of the wafer 13, and an etching resistant tape 15 is bonded to a surface 13B opposite to the device formation surface 13A. Then, the wafer 13 is dipped in a wet etching solution for etching, and a separation groove 16 is formed such that the wafer 13 is cut down over the entire thickness following the circular pattern of the resist 14, and hence the wafer 13 is divided into a plurality of semiconductor chips 1. In succession, the etching resistant tape 15 is mechanically exfoliated, and the resist 14 is removed with a solvent.

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