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    • 1. 发明专利
    • Service module generation program, device, and service information management method
    • 服务模块生成程序,设备和服务信息管理方法
    • JP2013073400A
    • 2013-04-22
    • JP2011211604
    • 2011-09-27
    • Fujitsu Ltd富士通株式会社
    • TAKAHASHI MASAKI
    • G06F9/44G06F11/00
    • PROBLEM TO BE SOLVED: To provide a technique for managing an interface according to a change in a service module.SOLUTION: On the basis of a first source code stored in a storage unit and a second source code of which version is earlier than the version of first source code, a computer is configured to execute processing of: generating difference information indicating difference between a definition of input/output parameters to be used for an interface function included in the first source code and a definition of input/output parameters to be used for an interface function included in the second source code; and transmitting the generated difference information to an external device.
    • 要解决的问题:提供一种根据服务模块的改变来管理接口的技术。 解决方案:基于存储在存储单元中的第一源代码和其版本早于第一源代码的版本的第二源代码,计算机被配置为执行以下处理:生成指示差异的差异信息 在用于包括在第一源代码中的接口功能的输入/输出参数的定义和要用于包括在第二源代码中的接口功能的输入/输出参数的定义之间; 以及将生成的差异信息发送到外部设备。 版权所有(C)2013,JPO&INPIT
    • 3. 发明专利
    • PROM
    • JPH01157568A
    • 1989-06-20
    • JP31585387
    • 1987-12-14
    • FUJITSU LTD
    • TAKAHASHI MASAKI
    • H01L27/102H01L21/8229H01L27/10
    • PURPOSE:To cut the access time by forming two pn-junctions with a primary region of one conductive type semiconductor, a secondary region of opposite conductive type semiconductor and a third region of one conductive type semiconductor in lamination structure and by joining the third region with the opposite conductive type substrate which extends through a buried layer. CONSTITUTION:A buried layer 6a allows a substrate 5 to pass through and extend immediately below the center of a region 3. The extending section 5a connects with the lower central section of the region 3. The peripheral section of the lower side of the region 3 connects with the buried layer 6a thus leading out the region 3 to an electrode 7b. When PROM device in this constitution is used as PROM memory cell S11-Snn, a minority carrier, if storaged in the region 3, is led in the substrate 5 which becomes a majority carrier through the connection with the extending section 5a of the substrate 5, thus reducing the time required for dissipation. In this way, it is possible to shorten the access time.
    • 4. 发明专利
    • READ-ONLY MEMORY CIRCUIT
    • JPS63313396A
    • 1988-12-21
    • JP15074387
    • 1987-06-17
    • FUJITSU LTD
    • TAKAHASHI MASAKI
    • G11C17/14G11C17/00
    • PURPOSE:To eliminate a transitional conductive cell caused by the generation of an address skew and to attain a high speed reading having no delay by discharging a precharged bit line by a discharge circuit after a prescribed time. CONSTITUTION:At the time of selecting the cell S11 of a memory cell array 12, since only a bit line 181 is precharged by a multiplex circuit 15, the bit line 181 goes to a high level and the cell S11 is unwritten, a discharge by a NAND circuit DD1 is not executed. After the data of the cell S11 is read, for instance, at the time of shifting to the selection of a next cell S12, the stored charge of the bit line 181 is discharged by a discharge circuit 30 and the potential of the bit line 181 returns to an original one. Similarly, when unwritten cells S12-S1n are sequentially selected, a similarly operation is generated, the bit line of the selected cell is discharged after the prescribed time and reading speed is improved.