专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2000012473A HEAT TREATMENT FURNACE 失效
公开(公告)号：JP2000012473A
公开(公告)日：2000-01-14
申请号：JP17604798
申请日：1998-06-23
申请人： FUJITSU LTD
发明人： KOBAYASHI MASANORI
IPC分类号： H01L21/22 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment furnace that can prevent undesirable oxidation on the surface of a substrate cause by entry of atmosphere into the furnace tube, when a semiconductor substrate is inserted into or removed out of the furnace tube of a heat treatment furnace. SOLUTION: This heat treatment furnace 30 has a furnace tube 31 for heat treatment of a semiconductor substrate 21, a heater 32 for heating the furnace tube, a heat resistant jig 20 for storing the substrate 21, a transport mechanism 33 for inserting and removing the heat resistant jig 20 into and from the furnace tube 31 and a gas piping 28 for supplying a gas for heat treatment. The heat resistant jig 20 has a sealed structure to shield the stored substrate 21 from external atmosphere, except for a gas-feeding inlet and an exhaust outlet 25. The gas piping 28 is connected to the heat resistant jig 20 and supplies the gas into the jig 20. The connected piping and jig can be moved in the same direction of inserting and removing the heat resistant jig 20 into and from the furnace tube 31.

2. 发明专利

JPH06291101A CLEANING METHOD FOR BOARD MATERIAL, CLEANING LIQUID TANK AND CLEANING EQUIPMENT 失效
公开(公告)号：JPH06291101A
公开(公告)日：1994-10-18
申请号：JP7833593
申请日：1993-04-05
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , YAMAZAKI TAKESHI , HAYAMI YUKA , ICHIHASHI SEIJI
IPC分类号： B08B11/04 , B08B3/04 , G03F1/82 , H01L21/304 , G03F1/08
摘要： PURPOSE:To decrease the quantity of particles adhering to a board material, e.g. a semiconductor wafer, at the time of cleaning thereof. CONSTITUTION:A liquid tank 1 having an overflow plane S0 is filled with a cleaning liquid 2 and a flow is formed on the surface of the cleaning liquid 2 in the direction receding from a plane S1 substantially normal to the overflow plane S0. A semiconductor wafer 3 is placed in the cleaning liquid 2 such that the semiconductor wafer 3 is normal to the plane S1 and the surface of the semconductor wafer 3 is in parallel with the main flow of the cleaning liquid 2.

3. 发明专利

JPH0637027A QUARTZ GLASS MATERIAL AND JIG FOR SEMICONDUCTOR HEAT TREATMENT 失效
公开(公告)号：JPH0637027A
公开(公告)日：1994-02-10
申请号：JP19215092
申请日：1992-07-20
申请人： FUJITSU LTD
发明人： YAMAZAKI TAKESHI , KOBAYASHI MASANORI
IPC分类号： C03C3/06 , H01L21/22 , H01L21/673 , H01L21/68
摘要： PURPOSE:To obtain synthesized quartz glass material which emits less impurities during use for heat treatment and is excellent in heat resistance by adding at least a specific quantity or more of aluminum and further a specific quantity or more of OH groups. CONSTITUTION:The improvement of the heat resistance of quartz glass material by the addition of aluminum is the most remarkable when the aluminum content is 5ppm or more. The heat resistance is not improved so much when the aluminum content exceeds 20ppm. The control of impurity emission by the addition of OH groups is the most remarkable when its content exceeds 100ppm. Though the emission of impurities is controlled better with the increase in OH group content, adding too large quantity of OH groups to quartz glass alters the property of the crystal. Therefore, quartz glass containing OH group of up to 300ppm or so is preferable for practical use. Use of a jig made of the synthesized quartz glass in semiconductor heat treatment controls the deterioration of semiconductors.

4. 发明专利

JPH0582462A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0582462A
公开(公告)日：1993-04-02
申请号：JP24119291
申请日：1991-09-20
申请人： FUJITSU LTD
发明人： INABA MICHIKO , KOBAYASHI MASANORI , YAMAZAKI TAKESHI
IPC分类号： H01L21/22 , H01L21/322
摘要： PURPOSE:To obtain a method for reducing the permeation of contamination metal into a semiconductor substrate, as regards contamination reduction at the time of heat treatment in a manufacturing process. CONSTITUTION:When heat treatment is performed in a manufacturing process of a semiconductor device, at least the rear of a semiconductor substrate 1 is covered with coating members 2, 5 of material wherein the diffusion coefficient of contamination metal is equivalent or small as compared with the case of the semiconductor substrate. The whole part of the semiconductor substrate is coated with nitride films 3, 6, so as to contain the coating members 2, 5. The material turning to the coating member is SiC, and constitutes a CVD-SiC film 2 formed at least on the rear of the semiconductor substrate 1, and a CVD-SiC plate 5 which is individually prepared and arranged on the rear.

5. 发明专利

JPH04287316A SEMICONDUCTOR MANUFACTURING DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH04287316A
公开(公告)日：1992-10-12
申请号：JP5176591
申请日：1991-03-16
申请人： FUJITSU LTD
发明人： YAMAZAKI TAKESHI , OGAWA TSUTOMU , KOBAYASHI MASANORI
IPC分类号： H01L21/205 , H01L21/22
摘要： PURPOSE:To realize a semiconductor manufacturing device in which the service lives of a furnace core tube for heat treatment and boat for heat treatment are prolonged by preventing the deformation of the tube and boat at high temperatures. CONSTITUTION:The internal surface of a quartz tube 10 for heat treatment is lined with reinforcing members 11 and 12 made of a material having a high- temperature strength higher than that of the quartz. In addition, the internal surface of a boat 13 for heat treatment made of quartz is also lined with reinforcing members 17 and 18 made of a material having a high-temperature strength higher than that of the quarts.

6. 发明专利

JPH04263421A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04263421A
公开(公告)日：1992-09-18
申请号：JP2432091
申请日：1991-02-19
申请人： FUJITSU LTD
发明人： KOBAYASHI MASANORI
IPC分类号： H01L21/22 , H01L21/31
摘要： PURPOSE:To obtain a semiconductor substrate high temperature heat treatment method with which metal contamination can be prevented easily and completely without lowering the heat-treatment temperature or without having the substrate surface coated with the substance of small metal diffusion constant. CONSTITUTION:When a semiconductor substrate 6 is going to be heat-treated, a substance, having the metal diffusion constant same as or smaller than the above-mentioned semiconductor substrate, or a shielding material 7 consisting of a substance coated with the aforesaid substance is arranged in a furnace-core tube 1 together with the above-mentioned semiconductor substrate 6 in such a manner that at least one surface, which becomes the main surface, of the semiconductor substrate 6 is covered, and a heat treatment is conducted.

7. 发明专利

JPH04107922A SEMICONDUCTOR CLEANING LIQUID AND CLEANING METHOD THEREWITH 失效
公开(公告)号：JPH04107922A
公开(公告)日：1992-04-09
申请号：JP22541990
申请日：1990-08-29
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , OGAWA TSUTOMU , NAKAJIMA KAZUJI
IPC分类号： H01L21/304 , H01L21/306
摘要： PURPOSE:To improve the removal effect of quartz particles and Si particles and reduce the etching quantity of the surface of an Si substrate and an SiO2 layer and reduce cost at the same time by specifying the capacity ratio Y of the hydrogen peroxide solution in specified concentration to the capacity ratio X of the ammonium solution in specified concentration, with the capacity ratio of pure water as 100. CONSTITUTION:Those are cleaned using the cleaning liquid where the capacity ratio of pure water is 1000, and based on the results of many experimentations, the area of the capacity ratio Y of the hydrogen peroxide solution of 31wt.% to the capacity ratio X of the ammonium solution of 29wt.%, which fulfills both the removal ratio of the Si particles and quartz particles and the etching quantity of Si and SiO2 layers at the same time, is sought. What is more, the area of Y shall be the range of Y1 X -6.22X10 X +1.52X+4.37, Y2=0.25X -2.75X +13.5X-10.

8. 发明专利

JPH0458529A APPARATUS AND METHOD FOR CLEANING 失效
公开(公告)号：JPH0458529A
公开(公告)日：1992-02-25
申请号：JP17059390
申请日：1990-06-28
申请人： FUJITSU LTD
发明人： KANEDA HIROSHI , KOBAYASHI MASANORI , SHIRAKAWA YOSHIMI , YOSHIKAWA TADAYOSHI
IPC分类号： H01L21/304
摘要： PURPOSE:To execute an efficient cleaning operation and to shorten a cleaning process by a method wherein, when semiconductor wafers are cleaned by a batch method, a laminar flow whose intensity distribution is uniform and a whirling flow whose intensity distribution is different are generated as required. CONSTITUTION:A plurality of cleaning-liquid supply pipes 6 which are arranged in parallel so as to pass sidewalls of a cleaning tank 1 are installed at the bottom part of the cleaning tank 1 ; a cleaning liquid is supplied to the cleaning- liquid supply pipes 6; the cleaning liquid is spouted from a plurality of spouting holes 3 formed at the cleaning-liquid supply pipes 6; and the cleaning liquid is supplied to the inside of the cleaning tank 1. On the other hand, a supply means in which flow directions of the cleaning liquid flowing to the plurality of supply pipes 6 are alternately different is installed; and the flow directions of the cleaning liquid flowing to the plurality of supply pipes 6 are changed alternately to execute a cleaning operation. In addition, the supply of the cleaning liquid to at least one out of the plurality of supply pipes 6 is stopped or the cleaning liquid is supplied to at least one; and an object to be cleaned is cleaned. Thereby, the cleaning operation can efficiently be executed and a cleaning process can be shortened.

9. 发明专利

JPH0456321A CLEANING DEVICE FOR SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH0456321A
公开(公告)日：1992-02-24
申请号：JP16892490
申请日：1990-06-26
申请人： FUJITSU LTD , FUJITSU TOHOKU ELECTRON KK
发明人： MORI HARUHISA , KOBAYASHI MASANORI , YOSHIKAWA TADAYOSHI
IPC分类号： H01L21/304
摘要： PURPOSE:To make it possible to unify liquid processing by chemical and improve processing efficiency by increasing the size of a drain hole which drains the cleaning solution for a plurality of straightening vanes as it approaches a semiconductor wafer and positioning the hole so that it may vary with the adjacent straightening plates up and down. CONSTITUTION:A pipe 3 provided with a number of getting holes 4 in the lower part is installed on the bottom of a cleaning tank 5. Straightening plates 7, 7' and 7'' are mounted with three projections 6, 6', and 6'' on a side wall of the cleaning tank 5 where the straightening plates with a smaller aperture are laid out at a lower position while the straightening plates with a larger aperture are laid out at a higher position so that the positions of the apertures may not agree with each other vertically, which makes it possible to produce a laminar flow whose flow rate is constant and uniform and thereby carry out uniform cleaning operation.

10. 发明专利

JPH03272590A MANUFACTURING EQUIPMENT OF SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03272590A
公开(公告)日：1991-12-04
申请号：JP7261290
申请日：1990-03-22
申请人： FUJITSU LTD
发明人： KANEDA HIROSHI , KOBAYASHI MASANORI , YAMAZAKI TAKESHI
IPC分类号： H05B3/14 , C23C16/32 , F27B17/00 , F27D11/02 , H01L21/205 , H05B3/64
摘要： PURPOSE:To prevent contamination of a semiconductor device in a core tube at the time of heat treatment by resistance-heating a solenoid of silicon carbide ribbon to heat the inside of the core tube. CONSTITUTION:A solenoid 2 of silicon carbide ribbon is provided as resistance heating material. This solenoid of silicon carbide ribbon 2 can be made by working silicon carbide film 6, and this silicon carbide film 6 can be formed without containing a contaminated metal atom by using raw material with high purity. Particularly, according to the chemical vapor-phase accumulation process, it is possible to form the silicon carbide film 6 with very high purity, and the solenoid 2 of silicon carbide ribbon is formed by working such silicon carbide film 6, and as this solenoid 2 is used for resistance heating material, no contaminated metal atom is introduced into the inside of a core tube 1 at the time of heat treatment. It is thereby possible to eradicate the cause of such trouble as a metal atom coming out of heater material at the time of high temperature annealing contaminates a semiconductor device arranged in the core tube 1.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式