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1. 发明专利

JPH06291101A CLEANING METHOD FOR BOARD MATERIAL, CLEANING LIQUID TANK AND CLEANING EQUIPMENT 失效
公开(公告)号：JPH06291101A
公开(公告)日：1994-10-18
申请号：JP7833593
申请日：1993-04-05
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , YAMAZAKI TAKESHI , HAYAMI YUKA , ICHIHASHI SEIJI
IPC分类号： B08B11/04 , B08B3/04 , G03F1/82 , H01L21/304 , G03F1/08
摘要： PURPOSE:To decrease the quantity of particles adhering to a board material, e.g. a semiconductor wafer, at the time of cleaning thereof. CONSTITUTION:A liquid tank 1 having an overflow plane S0 is filled with a cleaning liquid 2 and a flow is formed on the surface of the cleaning liquid 2 in the direction receding from a plane S1 substantially normal to the overflow plane S0. A semiconductor wafer 3 is placed in the cleaning liquid 2 such that the semiconductor wafer 3 is normal to the plane S1 and the surface of the semconductor wafer 3 is in parallel with the main flow of the cleaning liquid 2.

2. 发明专利

JPH0689889A WAFER WASHER 失效
公开(公告)号：JPH0689889A
公开(公告)日：1994-03-29
申请号：JP24077792
申请日：1992-09-09
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , YAMAZAKI TAKESHI , HAYAMI YUKA , ICHIHASHI SEIJI
IPC分类号： B08B3/02 , H01L21/304
摘要： PURPOSE:To effectively realize washing of a wafer during carrying by a method wherein a nozzle unit in which a plurality of nozzles for jetting a spray of washing water are provided in parallel is fitted into a hanger for holding and carrying a carrier receiving wafers. CONSTITUTION:A pair of hangers is provided in which frame parts on the both sides, projecting to the both sides of a carrier 11, are held by holding parts 21a, 22a at a lower end to carry a carrier 11 in the level direction and in the vertical direction. Washing water spray units 23, 24 fixed to vertical arms 21b, 22b in a center of each of hangers 21, 22 are provided. Each of units 23, 24 is provided in parallel so that a plurality of nozzles 23b, 24b are aligned on the side surface of pipes 23a, 24a at an equal pitch and at a predetermined angle (10 to 30 degrees) toward the wafer main surface 10a. When the hangers 21, 22 hold and carry the carrier 11, washing water is jetted from each of the nozzles 23b, 24b of the nozzle units 23, 24 peripheral edge to a of a wafer 10 to wash the wafer main surface 10a.

3. 发明专利

JP2006004982A Semiconductor substrate and manufacturing method thereof 有权
标题翻译：半导体基板及其制造方法
公开(公告)号：JP2006004982A
公开(公告)日：2006-01-05
申请号：JP2004176755
申请日：2004-06-15
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SAIKI TAKASHI , OGOSHI KATSUAKI , HAYAMI YUKA
IPC分类号： H01L21/768 , H01L21/76 , H01L21/8238 , H01L23/31 , H01L23/522 , H01L27/092 , H01L29/76
CPC分类号： H01L21/768 , H01L23/3171 , H01L2924/0002 , H01L2924/3511 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide semiconductor substrate which can restrain warpage in a semiconductor substrate, in which an insulating film, such as an interlayer insulating film or the like having a tensile stress, is formed on the surface thereof, and to provide a manufacturing method of the semiconductor substrate.
SOLUTION: The semiconductor substrate comprises a silicon wafer 10, a multi-layer wiring 12 embedded in an interlayer insulating film formed on the front surface of the silicon wafer 10, and a silicon nitride film 16b as an insulating film which is formed on the rear surface of the silicon wafer 10 and has a tensile stress. Stress is given to the silicon wafer 10 with the interlayer insulating film, to which the multi-layer wiring 12 is embedded, and is relaxed with the silicon nitride film 16b. Accordingly, warpage of the silicon wafer 10 is restrained. Thus, generation of defective absorption in the transfer system of semiconductor substrate can be prevented.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够抑制其表面上形成有具有拉伸应力的绝缘膜等的绝缘膜的半导体基板中的翘曲的半导体基板，并且提供半导体衬底的制造方法。解决方案：半导体衬底包括硅晶片10，嵌入在硅晶片10的前表面上形成的层间绝缘膜中的多层布线12和形成为绝缘膜的氮化硅膜16b 在硅晶片10的后表面上并具有拉伸应力。利用多层布线12嵌入的层间绝缘膜向硅晶片10施加应力，并且与氮化硅膜16b松弛。因此，抑制了硅晶片10的翘曲。因此，可以防止在半导体衬底的转移系统中产生有缺陷的吸收。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005353824A Device and method for cleaning electronic device 审中-公开
标题翻译：用于清洁电子设备的装置和方法
公开(公告)号：JP2005353824A
公开(公告)日：2005-12-22
申请号：JP2004172630
申请日：2004-06-10
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAMI YUKA
IPC分类号： B08B3/02 , B08B3/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for cleaning electronic device by which the decomposition of liquid chemicals can be prevented to the utmost and the exclusively used area can be reduced.
SOLUTION: The device for cleaning electronic device has a spin base (substrate placing base) 10 on which a silicon wafer (substrate) W is placed, a first discharge opening 17a from which a first liquid chemical L
1 prepared by only dissolving a first solvent is discharged toward the silicon wafer W, and a second discharge opening 18a from which a second liquid chemical L
2 prepared by only dissolving a second solvent different from the first solvent is discharged toward the silicon wafer W.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于清洁电子装置的装置和方法，通过该装置和方法可以最大限度地防止液体化学品的分解，并且可以减少专门使用的面积。解决方案：用于清洁电子装置的装置具有其上放置硅晶片（基板）W的旋转基座（基板放置基座）10，第一液体化学品L <1> 通过仅溶解第一溶剂而制备的SB / SB>向第一溶剂排出第二排出口18a，第二排液口18a仅通过溶解不同于第一溶剂的第二溶剂而制备的第二液体化学物质溶剂向硅晶片W排出。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2007123330A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2007123330A
公开(公告)日：2007-05-17
申请号：JP2005309769
申请日：2005-10-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： O JUNSHI , HAYAMI YUKA , KOUSU MASATOSHI , YAMANO MASAOMI
IPC分类号： H01L21/304 , H01L21/027
CPC分类号： H01L21/31111 , G03F7/423 , H01L21/0206 , H01L21/823807 , H01L21/823814 , H01L21/823864
摘要： PROBLEM TO BE SOLVED: To suppress etching of SPM solution with respect to a nitride film formed on a surface of a semiconductor substrate.
SOLUTION: In a manufacturing method of a semiconductor device, a solution comprising sulphuric acid and hydrogen peroxide solution is heated, solution is supplemented with sulphuric acid of a prescribed amount and hydrogen peroxide solution of the prescribed amount at prescribed intervals, sulphuric acid of solution is maintained to not less than prescribed concentration, the semiconductor substrate is immersed in solution, and the semiconductor substrate is cleaned. Furthermore, a resist film is formed on the semiconductor substrate, a resist pattern is formed on the resist film, and the semiconductor substrate is worked with the resist pattern as a mask. A solution comprising sulphuric acid and hydrogen peroxide solution is heated, solution is supplemented with the sulphuric acid of the prescribed amount and hydrogen peroxide solution of the prescribed amount at the prescribed intervals, and sulphuric acid of the solution is maintained to a level that is not less than prescribed concentration. The semiconductor substrate is immersed in the solution, and the resist pattern is removed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：抑制对形成在半导体衬底的表面上的氮化物膜的SPM溶液的蚀刻。解决方案：在半导体器件的制造方法中，将含有硫酸和过氧化氢溶液的溶液加热，用规定量的硫酸和规定间隔的过氧化氢溶液补充溶液，加入硫酸的溶液维持在规定浓度以上，将半导体基板浸渍在溶液中，对半导体基板进行清洗。此外，在半导体衬底上形成抗蚀剂膜，在抗蚀剂膜上形成抗蚀剂图案，并将半导体衬底与抗蚀剂图案一起作为掩模加工。加入含有硫酸和过氧化氢溶液的溶液，用规定量的规定量的硫酸和规定量的过氧化氢溶液补充溶液，将溶液的硫酸维持在不为小于规定浓度。将半导体衬底浸入溶液中，除去抗蚀剂图案。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2005079215A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005079215A
公开(公告)日：2005-03-24
申请号：JP2003305699
申请日：2003-08-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HORI MITSUAKI , SAKUMA JUN , TAMURA NAOYOSHI , INOUE HIROKO , HAYAMI YUKA , HIZUYA KENICHI , YAMAGUCHI AKIO , KOIIZUKA MASAAKI
IPC分类号： H01L21/302 , H01L21/02 , H01L21/308 , H01L21/316 , H01L21/324 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which has a process wherein temperature can be decreased and can perform reduction of a natural oxide film. SOLUTION: The method for manufacturing a semiconductor device is provided with (a) a step for preparing a substrate which has at least a silicon surface layer, (b) a step for forming the natural oxide film whose thickness is 0.1 - 0.5 nm on the surface of the silicon surface layer, (c) a step wherein the reduction of the natural oxide film whose thickness is 0.1 - 0.5 nm is performed by using hydrogen annealing treatment, and (d) a step for forming a gate insulating film on a surface of the silicon surface layer, following the above process (c). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件具有能够降低温度并能够降低自然氧化物膜的工艺。解决方案：制造半导体器件的方法具有（a）制备至少具有硅表面层的衬底的步骤，（b）形成厚度为0.1-0.5的氧化皮膜的步骤（c）通过氢退火处理进行厚度为0.1〜0.5nm的自然氧化膜的还原的工序，（d）形成栅极绝缘膜的工序，在硅表面层的表面上，按照上述方法（c）。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JPH1064866A CLEANING METHOD AND CLEANER FOR SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH1064866A
公开(公告)日：1998-03-06
申请号：JP22245296
申请日：1996-08-23
申请人： FUJITSU LTD
发明人： HAYAMI YUKA , SUZUKI YOSHINORI , OGAWA HIROTERU , FUJIMURA SHUZO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent the formation of a natural oxide film, and remove metallic impurities and particles including adsorbed copper without etching the surface of silicon by cleaning a semiconductor substrate, where a silicon oxide film including a natural oxide film is made, in heated chloric acid, fluoric acid, and pure aqueous solution. SOLUTION: As regards the metal other than copper, metallic impurities and particles are removed equally to or higher than the conventional method, and as regards the copper, they are removed equally, in case of low-temperature heating (Treatment B), using chloric acid, fluoric acid, and pure aqueous solution, nevertheless, a natural oxide film is not made. Furthermore, by high- temperature heating (Treatment C), the removal effect to all metallic impurities including copper is raised, and this can have high cleaning power even to copper and aluminum which were difficult of removal. Hereby, the metallic impurities including copper and all oxide films can be removed at the same time without etching the surface of silicon and besides without oxidizing it.

8. 发明专利

JPH104074A METHOD OF CLEANING SUBSTRATE OR FILM AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH104074A
公开(公告)日：1998-01-06
申请号：JP5943997
申请日：1997-03-13
申请人： FUJITSU LTD
发明人： HAYAMI YUKA , SUZUKI YOSHINORI , OKUI YOSHIKO
IPC分类号： B08B3/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a substrate or a film in which growth of an oxide film is suppressed by preparing a cleaning solution obtained by diluting a chemical for cleaning with pure water in which dissolved gas or dissolved oxygen is preliminary reduced and cleaning the substrate or the film on the substrate with the cleaning solution. SOLUTION: A silicon wafer 1 having a natural oxide film 2 made of silicon dioxide on the surface is prepared. The natural oxide film 2 of the silicon wafer 1 is made to contain a metal impurity 3 such as aluminium, chrome, or the like and particles are allowed to join from the air. A mixture solution in which ammonia water, hydrogen peroxide, and pure water including oxygen are mixed is supplied to the silicon wafer 1. Subsequently, the natural oxide film 2 is cleaned with ultrapure water in which dissolved oxygen is reduced to thereby remove the metal impurity 3 attached on the natural oxide film 2. After that, the surface of the silicon wafer 1 is dried. Consequently, the growth of the natural oxide film 2 on the silicon wafer 1 can be suppressed.

9. 发明专利

JP2004153076A Manufacture of semiconductor device 有权
公开(公告)号：JP2004153076A
公开(公告)日：2004-05-27
申请号：JP2002317598
申请日：2002-10-31
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAMI YUKA , O JUNSHI , SAIKI TAKASHI , KASE MASATAKA
IPC分类号： H01L21/3065 , H01L21/306 , H01L21/311 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/31133 , H01L21/31138 , H01L21/823814 , H01L29/665
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can suppress electric resistance at a low level in an extension region. SOLUTION: The method comprises a step of forming a gate electrode 20 on each of a first element region 14n and a second element region 14p, a step of forming a first resist film 22 with the first element region being open, a step of forming a first impurities diffusing region with the first resist film and the gate electrode serving as a mask, a first ashing step for ashing the first resist film, a step of forming a side wall insulating film on the side wall of the gate electrode, a step of forming a second resist film with the first element region being open, a step of forming a second impurities diffusing region with the second resist film, the gate electrode, and the side wall insulating film serving as a mask, and a second ashing step for ashing the second resist film. The time required for the first ashing step is shorter than that required for the second ashing step. COPYRIGHT: (C)2004,JPO

10. 发明专利

JPH10229064A CLEANING METHOD FOR SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH10229064A
公开(公告)日：1998-08-25
申请号：JP3080597
申请日：1997-02-14
申请人： FUJITSU LTD
发明人： OGAWA YOUKI , HAYAMI YUKA , FUJIMURA SHUZO
IPC分类号： H01L21/308 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To increase the production yield of semiconductor device by cleaning a substrate with a mixture solution of specified temperature where nitric acid and hydrofluoric acid are mixed at a specified ratio thereby removing particles adhering to the surface and suppressing readhesion thereof. SOLUTION: A semiconductor substrate 1 is cleaned with a mixture solution containing nitric acid and hydrofluoric acid. A chemical oxide film is formed on the surface of the substrate 1 by the nitric acid and etched by the hydrofluoric acid. Generation rate of the chemical oxide film by the nitric acid and etching rate thereof by the hydrofluoric acid have relationship to the mixing ratio of nitric acid and hydrofuloric acid and the temperature of solution. The mixing ratio of nitric acid and hydrofluoric acid and the temperature of solution are regulated such that the generation rate of the chemical oxide film by the nitric acid will be higher than the etching rate thereof by the hydrofluoric acid.

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