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1. 发明专利

JPH06291101A CLEANING METHOD FOR BOARD MATERIAL, CLEANING LIQUID TANK AND CLEANING EQUIPMENT 失效
公开(公告)号：JPH06291101A
公开(公告)日：1994-10-18
申请号：JP7833593
申请日：1993-04-05
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , YAMAZAKI TAKESHI , HAYAMI YUKA , ICHIHASHI SEIJI
IPC分类号： B08B11/04 , B08B3/04 , G03F1/82 , H01L21/304 , G03F1/08
摘要： PURPOSE:To decrease the quantity of particles adhering to a board material, e.g. a semiconductor wafer, at the time of cleaning thereof. CONSTITUTION:A liquid tank 1 having an overflow plane S0 is filled with a cleaning liquid 2 and a flow is formed on the surface of the cleaning liquid 2 in the direction receding from a plane S1 substantially normal to the overflow plane S0. A semiconductor wafer 3 is placed in the cleaning liquid 2 such that the semiconductor wafer 3 is normal to the plane S1 and the surface of the semconductor wafer 3 is in parallel with the main flow of the cleaning liquid 2.

2. 发明专利

JPH04107922A SEMICONDUCTOR CLEANING LIQUID AND CLEANING METHOD THEREWITH 失效
公开(公告)号：JPH04107922A
公开(公告)日：1992-04-09
申请号：JP22541990
申请日：1990-08-29
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , OGAWA TSUTOMU , NAKAJIMA KAZUJI
IPC分类号： H01L21/304 , H01L21/306
摘要： PURPOSE:To improve the removal effect of quartz particles and Si particles and reduce the etching quantity of the surface of an Si substrate and an SiO2 layer and reduce cost at the same time by specifying the capacity ratio Y of the hydrogen peroxide solution in specified concentration to the capacity ratio X of the ammonium solution in specified concentration, with the capacity ratio of pure water as 100. CONSTITUTION:Those are cleaned using the cleaning liquid where the capacity ratio of pure water is 1000, and based on the results of many experimentations, the area of the capacity ratio Y of the hydrogen peroxide solution of 31wt.% to the capacity ratio X of the ammonium solution of 29wt.%, which fulfills both the removal ratio of the Si particles and quartz particles and the etching quantity of Si and SiO2 layers at the same time, is sought. What is more, the area of Y shall be the range of Y1 X -6.22X10 X +1.52X+4.37, Y2=0.25X -2.75X +13.5X-10.

3. 发明专利

JPH0332024A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0332024A
公开(公告)日：1991-02-12
申请号：JP16768089
申请日：1989-06-29
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , UNO MASAAKI , NAKAJIMA KAZUJI
IPC分类号： H01L21/30 , H01L21/027 , H01L21/304
摘要： PURPOSE:To prevent attachment of dust due to electrostatic adsorption and formation of water marks by immersing a carrier on which wafers are mounted into hydrophilic organic solvent in a grounded treating cell, and removing static electricity induced in the wafers and the carrier. CONSTITUTION:Wafers 8 to be treated are mounted on a wafer carrier 9 and immersed into organic solvent 6 in a grounded treating cell 5. The solvent comprises isopropyl alcohol and contains a lipophilic group, a hydrophilic group and has high electric conductivity. Therefore, remaining resist releasing liquid is dissolved with the lipophilic group in the solvent 6. The hydrophilic group substitutes for the surfaces of the wafers 8 and the carrier 9, and the hydrophilic property is obtained. Static electricity induced in the wafer 8 and the carrier 9 is grounded through the solvent 6 and removed. Thus, attachment of dust on the surfaces of the wafers due to electrostatic adsorption and the formation of water marks are prevented, and the normal films can be formed.

4. 发明专利

JPH0689889A WAFER WASHER 失效
公开(公告)号：JPH0689889A
公开(公告)日：1994-03-29
申请号：JP24077792
申请日：1992-09-09
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , YAMAZAKI TAKESHI , HAYAMI YUKA , ICHIHASHI SEIJI
IPC分类号： B08B3/02 , H01L21/304
摘要： PURPOSE:To effectively realize washing of a wafer during carrying by a method wherein a nozzle unit in which a plurality of nozzles for jetting a spray of washing water are provided in parallel is fitted into a hanger for holding and carrying a carrier receiving wafers. CONSTITUTION:A pair of hangers is provided in which frame parts on the both sides, projecting to the both sides of a carrier 11, are held by holding parts 21a, 22a at a lower end to carry a carrier 11 in the level direction and in the vertical direction. Washing water spray units 23, 24 fixed to vertical arms 21b, 22b in a center of each of hangers 21, 22 are provided. Each of units 23, 24 is provided in parallel so that a plurality of nozzles 23b, 24b are aligned on the side surface of pipes 23a, 24a at an equal pitch and at a predetermined angle (10 to 30 degrees) toward the wafer main surface 10a. When the hangers 21, 22 hold and carry the carrier 11, washing water is jetted from each of the nozzles 23b, 24b of the nozzle units 23, 24 peripheral edge to a of a wafer 10 to wash the wafer main surface 10a.

5. 发明专利

JPH0547733A CLEANING METHOD FOR WAFER 失效
公开(公告)号：JPH0547733A
公开(公告)日：1993-02-26
申请号：JP20667191
申请日：1991-08-19
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： INABA MICHIKO , KOBAYASHI MASANORI , YAMAZAKI TAKESHI , NAKAJIMA KAZUJI
IPC分类号： H01L21/304 , B08B3/02
摘要： PURPOSE:To obtain a cleaning method in which dusts are not generated in a simple structure in the method for preventing generation of dusts from a wafer at the time of etching, cleaning in a semiconductor manufacturing step. CONSTITUTION:The cleaning method is so constituted as not to bring cleaning water 3 into contact with an inner wall of a carrier 2 containing a wafer 1, as to splash the wafer 3 from above the wafer 1, that, after the wafer 1 is placed on the carrier 2 and inserted into a washing tank, a shower valve 5 of a water feed tube 4 is moved over the wafer 1 or obliquely over the wafer to operate, that a mounting pitch of the valves 5 is the same as a containing pitch of the wafers 1 in the carrier 2, and further that a blow-off port of the valve 5 is formed in a slender slit shape.

6. 发明专利

JPH02177436A THERMAL TREATMENT FURNACE 失效
公开(公告)号：JPH02177436A
公开(公告)日：1990-07-10
申请号：JP33237088
申请日：1988-12-28
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , NAKAJIMA KAZUJI
IPC分类号： H01L21/31
摘要： PURPOSE:To reduce the cost for replacing a core tube in a shower-type thermal treatment furnace which facilitates uniform and high speed diffusion of reactive gas by a method wherein a gas introducing and spouting part in which a reactive gas introducing inlet and a plurality of gas spouting outlets are provided and the core tube which is coupled with the gas introducing and spouting part so as to be separated freely are provided. CONSTITUTION:A gas introducing and spouting part 2 in which a reactive gas introducing inlet 21 and a plurality of gas spouting outlets 22a through which the reactive gas is diffused and spouted out into a core tube 1 which is coupled with the gas introducing and spouting part 2 so as to be separated freely are provided. For instance, the core tube 1 is a slender cylinder made of quartz material and the surface of the inner wall 11 of its end to which the gas introducing and spouting part 2 is fitted is roughed to form a friction surface. The gas introducing and spouting part 2 is made of quartz or the like and has an approximate funnel-shape and has the reactive gas introducing inlet 21 on one end and a partition plate 22 in which a plurality of the gas spouting outlets 22a are distributed uniformly over the whole surface on the other end and the surface 23 of the fitting part is roughed so as to be coupled with the core tube 1 by a friction method.

7. 发明专利

JPH0475341A METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0475341A
公开(公告)日：1992-03-10
申请号：JP18806590
申请日：1990-07-18
申请人： FUJITSU LTD , FUJITSU VLSI LTD , FUJITSU TOHOKU ELECTRON KK
发明人： KOBAYASHI MASANORI , NAKAJIMA KAZUJI , YOSHIKAWA TADAYOSHI
IPC分类号： B08B3/10 , H01L21/304
摘要： PURPOSE:To enhance a cleaning effect by a method wherein a cleaning liquid is jetted to the stagnant part, of a cleaning liquid, which is caused inside a cleaning tank, ultrasonic waves are impinged on the part of a cleaning liquid to which ultrasonic waves have been impressed is jetted on the part so that the stagnant part is diffused and that a new cleaning liquid always comes into contact with a semiconductor substrate. CONSTITUTION:A substrate support jig 6 which has supported a plurality of semiconductor substrates 5 is placed inside a cleaning tank 1. A cleaning liquid is fed into the cleaning tank 1 form a cleaning-liquid supply port 2; it is made to overflow; the semiconductor substrates 5 are cleaned. At this time, respective cleaning liquids are jetted, by using cleaning-liquid jet silicones 3, 4, to stagnant parts 7, 8, of the cleaning liquid, which are caused inside the cleaning tank 1; the stagnant parts 7, 8 are diffused so that new cleaning liquids always come into contact with the semiconductor substrates 5. It is preferable that the jet speed of the cleaning liquids from the cleaning-liquid jet silicones 3, 4 is set at two times or higher the speed of the cleaning liquid which is fed from the cleaning liquid supply port 2.

8. 发明专利

JPH02180063A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02180063A
公开(公告)日：1990-07-12
申请号：JP33542588
申请日：1988-12-29
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： UNO MASAAKI , KOBAYASHI MASANORI , NAKAJIMA KAZUJI
IPC分类号： H01L25/18 , H01L21/208 , H01L21/321 , H01L21/60 , H01L23/52 , H01L25/065 , H01L25/07 , H01L27/00
摘要： PURPOSE:To align bumps by a simple method and enable the lamination of semiconductor wafers by equalizing all the relative positional relation of the facet of each semiconductor wafer with a plurality of the through holes where bumps are made. CONSTITUTION:At least 3 through holes 3 parallel to the axis 2 of a column are formed, and a facet 4 comprising a plane parallel to the axis 2 of the column is made on the flank of a columnlike semiconductor ingot 1. Besides, a plurality of sheets of semiconductor wafers 11 are made by slicing the columnlike semiconductor ingot 1 at planes crossing at right angles to the axis 2 of the column. Accordingly, the relative positional relation of the facet 4 of each semiconductor wafer 11 with the through holes 3 becomes all equal. And, the alignment of bumps 9 formed in the through holes 3 is done automatically if semiconductor wafers 11 are aligned mutually through facets 4. This makes it possible to laminate the semiconductor wafers 11 easily.

9. 发明专利

JPH03129719A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03129719A
公开(公告)日：1991-06-03
申请号：JP12613090
申请日：1990-05-16
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： UNO MASAAKI , KOBAYASHI MASANORI , NAKAJIMA KAZUJI
IPC分类号： H01L21/02 , H01L21/673
摘要： PURPOSE:To effectively remove electricity of a substrate-housing jig and of a semiconductor substrate housed in the jig by a method wherein the substrate is housed in the substrate-housing jig and a film of a volatile organic solvent is formed on the surface of the substrate-housing jig in a state that the substrate-housing jig has been grounded. CONSTITUTION:Substrates 4 are inserted into a jig 1 from an upperpart opening part 1a and are held in the jig so as to be separated from each other. A holding member 3 is grounded; the jig 1 is held on a reservoir 2 of a volatile organic solvent such as IPA or the like in a container 2a which has been grounded in the same manner. Then, the holding member 3 is lowered; the jig 1 is immersed completely in the reservoir 2 of the IPA together with the semiconductor substrates 4 housed in the jig 1. Then, the jig 1 is pulled up from the reservoir 2 at a proper speed and is dried. During this process, an IPA film is formed on the surface of the jig 1; an electric charge is conducted immediately to the conductive holding member 3 through the film and is made to escape to a ground. Also an electric charge generated in the semiconductor substrates 4 housed in the jig 1 is made to flow to the IPA film with which the jig 1 is covered at a contact point with the jig 1, and is made to escape to the ground through the holding member 3.

10. 发明专利

JPH02303046A CARRIER JIG FOR SEMICONDUCTOR SUBSTRATE HOUSING JIG 失效
公开(公告)号：JPH02303046A
公开(公告)日：1990-12-17
申请号：JP12304789
申请日：1989-05-17
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KOBAYASHI MASANORI , UNO MASAAKI , NAKAJIMA KAZUJI
IPC分类号： H01L21/677 , H01L21/68
摘要： PURPOSE:To decrease dust attached to a housing jig and a substrate and improve the manufacturing yield by providing a layer for prevention against static electricity to a contact face between a carrier jig and the substrate housing jig made of a resin so that the above layer consists of the same kind of resin as one used in the above housing jig. CONSTITUTION:Suspending a housing jig 2 of a semiconductor substrate, a carrier jig 1 is formed with rustless steel and quartz and the like. A layer for prevention against static electricity which consists of the same kind of resins as those forming the jig 2 is formed at a contact face between jigs 1 and 2 and then, its layer prevents generation of static electricity caused by contact friction. The formation of this layer exceedingly reduces dust attained to the housing jig and the substrate and improves the manufacturing yield.

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