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1. 发明专利

JPH0378340B2 失效
公开(公告)号：JPH0378340B2
公开(公告)日：1991-12-13
申请号：JP26711987
申请日：1987-10-22
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU
IPC分类号： B65H1/28 , B25J15/06 , B65G1/00 , B65G1/07 , B65G47/91 , B65G49/07 , B65H3/08 , H01L21/677 , H01L21/683

2. 发明专利

JPH03247793A ELECTROPLATING EQUIPMENT AND ITS PRODUCTION 失效
公开(公告)号：JPH03247793A
公开(公告)日：1991-11-05
申请号：JP4364790
申请日：1990-02-22
申请人： FUJITSU LTD
发明人： HASEGAWA HITOSHI , KOBAYASHI MASANORI , SHIRAKAWA YOSHIMI , OGAWA TSUTOMU
IPC分类号： C25D5/08 , C25D7/00 , C25D7/12 , C25D17/00 , C25D17/06
摘要： PURPOSE:To prevent change in the plane shape of an anode even when plating is repeated and to uniform in-plane distribution of thickness of a plated film by exposing only the plate face in one face side of the anode and preventing the anode from being eluted from the side wall and the other plate face. CONSTITUTION:An electroplating equipment is constituted of a first electrode 12, a second electrode 10 connected to the material 11 to be plated and a plating tank 6 housing these electrodes and plating liquid. The first electrode 12 has a plurality of through-holes 13 to the plate face. A plating member 9 is exposed only in the plate face of one face side. The molten plating member 9 is cast into an elution resistant frame 14 and solidified to form the first electrode 12.

3. 发明专利

JPH0312949A WAFER CARRIER HOLDING DEVICE 失效
公开(公告)号：JPH0312949A
公开(公告)日：1991-01-21
申请号：JP14870389
申请日：1989-06-12
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU , KOBAYASHI MASANORI
IPC分类号： H01L21/673 , H01L21/68
摘要： PURPOSE:To prevent a wafer from being charged with electric charges independently of the material of a wafer carrier by providing a wafer contact part such that at least one end of the wafer in the wafer carrier makes contact with the wafer contact part upon placing the wafer carrier. CONSTITUTION:A conductive or semiconductive wafer contact part 3 is provided such that one end of a wafer 5 placed on a wafer carrier 4 makes contact with the wafer carrier 4. For this, even though the wafer carrier 4 is charged with static electricity after processing and hence static electricity is induced on the wafer 5, when the wafer carrier 4 on which the wafer 5 is placed is placed on a wafer carrier holding device 1, the static electricity on the wafer 5 can be removed through the wafer contact part by earthening the wafer 5 contact part. Hereby, the material of the wafer carrier 4 comprises an insulator material, e.g. Teflon liable to be charged, the wafer 5 can be prevented from being charged in storage thereof irrespective of the material.

4. 发明专利

JPH02278818A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02278818A
公开(公告)日：1990-11-15
申请号：JP10088389
申请日：1989-04-20
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU
IPC分类号： H01L21/225
摘要： PURPOSE:To form a shallow diffusion region with good accuracy without a restriction that a crystal silicon film must be left after a diffusion operation by a method wherein a polycrystalline carbon film is formed on a substrate, impurities are implanted into the carbon film by an ion implantation operation, the impurities are diffused into the substrate by a heat treatment and an impurity diffusion region is formed. CONSTITUTION:An SiO2 field insulating film 2 and a polycrystalline Si gate electrode 3 are formed on a p-Si substrate 1; a polycrystalline carbon film 4 is formed on the whole surface on them by a CVD method by pyrolyzing a hydrocarbon; As ions are implanted. Then, a heat treatment is executed in an atmosphere of nitrogen; As in the carbon film is diffused to the substrate 1 and the gate electrode 3; a source/drain region 5 as an impurity diffusion region is formed in the substrate 1. Then, the carbon film 4 is removed by a mixed solution of heated concentrated sulfuric acid and hydrogen peroxide. Thereby, a shallow diffusion region can be formed with good accuracy without a restriction that a polycrystalline silicon film used as a solid diffusion source must be left after a diffusion operation.

5. 发明专利

JPH01259532A LIGHT IRRADIATION PLATING AND APPARATUS THEREFOR 失效
公开(公告)号：JPH01259532A
公开(公告)日：1989-10-17
申请号：JP8760788
申请日：1988-04-08
申请人： FUJITSU LTD
发明人： KANEDA HIROSHI , OGAWA TSUTOMU , HASEGAWA HITOSHI , UNO MASAAKI , KASE MASATAKA
IPC分类号： H01L21/288
摘要： PURPOSE:To eliminate undesirable temperature rise in a substrate due to light irradiation causing a plating current, by subjecting a semiconductor substrate to processes while irradiating the semiconductor substrate with the light having lower energy than the forbidden band gap of the semiconductor. CONSTITUTION:A semiconductor substrate with a p-n junction is electrically plated while being irradiated thereon with the light having lower energy than the forbidden band thereof. In order to irradiate such light having low energy, a thin piece of a semiconductor, which has the same forbidden band gap as that of the semiconductor to be processed, is used as a filter for eliminating the light having higher energy than the forbidden band gap of the semiconductor. As a result, the excessive energy supplied to the semiconductor substrate is largely reduced, so that the temperature rise in both the substrate and the plating bath can be reduced to small degrees.

6. 发明专利

JPS6412095B2 失效
公开(公告)号：JPS6412095B2
公开(公告)日：1989-02-28
申请号：JP5210082
申请日：1982-03-30
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU
IPC分类号： H01L21/3205 , H01L21/268 , H01L21/768 , H01L21/82 , H01L23/52 , H01L23/525

7. 发明专利

JPS6246989B2 失效
公开(公告)号：JPS6246989B2
公开(公告)日：1987-10-06
申请号：JP3928880
申请日：1980-03-27
申请人： FUJITSU LTD
发明人： MORI HARUHISA , OGAWA TSUTOMU , MATSUMOTO TAKASHI
IPC分类号： H01L29/73 , H01L21/20 , H01L21/22 , H01L21/225 , H01L21/263 , H01L21/268 , H01L21/331 , H01L21/8238 , H01L27/092 , H01L29/04 , H01L29/06 , H01L29/78

8. 发明专利

JPS61251152A FORMATION OF BUMP 失效
公开(公告)号：JPS61251152A
公开(公告)日：1986-11-08
申请号：JP9440185
申请日：1985-04-30
申请人： FUJITSU LTD
发明人： HASEGAWA HITOSHI , OGAWA TSUTOMU , KOBAYASHI MASANORI
IPC分类号： H01L21/60 , H01L21/92
摘要： PURPOSE:To form a bump easily without contamination of a substrate by a method wherein a thick resist film and a thin resist film are formed on a substrate on which a metal pad is formed and the thick resist film is etched by utilizing the thin film as a mask to expose the metal pad. CONSTITUTION:After an aluminum pad 2 and a protection insulation film 3 are formed on a semiconductor substrate 1, a thick resist film 7 is applied and laminated to the thickness of approximately 50mum. Then an aluminum thin film or an insulation film 8 with a thickness of approximately 2mum is formed. Then a photoresist film 4 with an aperture of a bump forming region 9 is selectively formed. After that, an aperture is formed in the film 8 by an etching utilizing the film 4 as a mask and further the film 7 is etched as far as the pad 2 is exposed. After a barrier metal layer 5 is evaporated and laminated, a solder material is evaporated to form a bump 6 and then the film 7 is lifted off.

9. 发明专利

JPS6072217A FABRICATION OF THIN FILM 失效
公开(公告)号：JPS6072217A
公开(公告)日：1985-04-24
申请号：JP17807783
申请日：1983-09-28
申请人： FUJITSU LTD
发明人： HASEGAWA HITOSHI , OGAWA TSUTOMU , KOBAYASHI MASANORI
IPC分类号： H01L21/31 , H01L21/203
摘要： PURPOSE:To purify a substrate and a vapor-deposited film and to increase the tight combining force due to the knock-on effect by using the cluster ion beam which is formed by ionization of argon gas and acceleration when vapor-deposited film is formed on the substrate with the irradiation with an inert gas ion. CONSTITUTION:Resistance heating, electron-beam heating or the like causes the substance to be deposited to fuse, evaporate and adhere by ejection onto a substrate. At this time, an argon gas cluster ion beam is projected on the substrate. For obtaining this beam, argon gas is firstly ejected into high vacuum of 10 - 10 Torr from a nozzle to be made into a cluster beam of argon which is then ionized by electron shower. This ionized argon cluster is accelerated by use of an acceleration electrode of 3kV or so and it is projected onto the substrate to act on the film which is being deposited. At this time, if it is before the deposition, that is also useful for purification of the substrate surface.

10. 发明专利

JPS59119666A Ion beam irradiation device 失效
标题翻译：离子束辐照器件
公开(公告)号：JPS59119666A
公开(公告)日：1984-07-10
申请号：JP22841682
申请日：1982-12-27
申请人： Fujitsu Ltd
发明人： SAKURAI JIYUNJI , MORI HARUHISA , OGAWA TSUTOMU , YONENAGA TOMIHIRO
IPC分类号： H01L21/265 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3172 , H01J37/3177
摘要： PURPOSE:To irradiate a broad region without dropping accuracy by laying plural ion beam generation means and irradiating a desired region of a sample while controlling each ion beam through a deflection means. CONSTITUTION:Plural ion beam guns 3a-3c put side by side in a row, a power source 2 and an outgoing electrode 4 are housed in the ion beam generation part 1 of an ion beam irradiation device. And only the parallel components are taken out from individual ion beams 5a-5c through collimators 6 while being focused by electrostatic lenses 7, blanked by deflectors 8 for blanking and futher deflected by deflectors 9 for scanning the desired regions of a sample 10 traveling in the arrow direction. Accordingly, as plural ion beams are used, pattern accuracy is not dropped thus allowing ion beams to irradiate a broad region and yet with simple constitution.
摘要翻译：目的：通过放置多个离子束产生装置并且通过偏转装置控制每个离子束来照射样品的期望区域，而不降低精度来照射宽阔区域。构成：在离子束照射装置的离子束产生部1中容纳有并列在一排的多个离子束枪3a-3c，电源2和输出电极4。并且只有平行的部件通过准直器6从各个离子束5a-5c被取出，同时由静电透镜7聚焦，被偏转器8遮住，用于消隐，并由偏转器9进一步偏转，用于扫描行进在样品10中的样品10的期望区域箭头方向。因此，由于使用多个离子束，图案精度不下降，因此允许离子束照射广泛的区域，但是具有简单的结构。

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