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1. 发明专利

JP2007251004A Characteristic prediction method and device for semiconductor device 有权
标题翻译：用于半导体器件的特性预测方法和器件
公开(公告)号：JP2007251004A
公开(公告)日：2007-09-27
申请号：JP2006074756
申请日：2006-03-17
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NAKAJIMA KENJI , YOSHIDA TOMOYUKI , OTSUKI HIROSHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To accurately predict the characteristics of a semiconductor device.
SOLUTION: The anisotropic etching of a high selection ratio is operated to a substrate or a predetermined layer, and cone-shaped etching residue formed with a crystal defect as a vertex is actualized (S12), and the etching residue is observed, and at least one of the density, shape and size of the crystal defect as the factor of the etching residue is evaluated (S16, S18), and the characteristics of the device are predicted based on at least one of the obtained density, shape and size of the crystal defect.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：准确地预测半导体器件的特性。解决方案：对基板或预定层进行高选择比的各向异性蚀刻，实现了以晶体缺陷为顶点形成的锥形蚀刻残留（S12），并观察蚀刻残留物，并且评估作为蚀刻残留因子的晶体缺陷的密度，形状和尺寸中的至少一个（S16，S18），并且基于获得的密度，形状和形状中的至少一个来预测器件的特性晶体缺陷的大小。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2014033162A Film formation device and film formation method 审中-公开
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2014033162A
公开(公告)日：2014-02-20
申请号：JP2012174312
申请日：2012-08-06
申请人： Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： NAGAI KENICHIRO , NAKAJIMA KENJI
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a technology of inhibiting irregularities from occurring in a film formed on a surface of a wafer.SOLUTION: A film formation device 10 includes: a chamber 15; a susceptor 16 which is installed in the chamber 15 and includes a placement part 17a on which a silicon wafer 50 is placed; a heater 22 which heats the silicon wafer 50 placed on the placement part 17a; and a raw material gas supply device 25 for introducing a raw material mixed gas, which generates a silicon solid body in response to heating, into the chamber. A solid film 100 is formed on a surface of the placement part 17a by the silicon solid body. Surface roughness of a surface of the solid film 100 is larger than surface roughness of the surface of the placement part 17a which is observed before the solid film 100 is formed thereon.
摘要翻译：要解决的问题：提供抑制在晶片表面形成的膜中发生不规则的技术。成膜装置10包括：室15; 基座16，其安装在腔室15中并且包括其上放置有硅晶片50的放置部分17a; 加热器22，其加热放置在放置部分17a上的硅晶片50; 以及原料气体供给装置25，其将在加热时产生硅固体的原料混合气体导入到室内。固体膜100由硅固体形成在放置部分17a的表面上。固体膜100的表面的表面粗糙度大于在其上形成固体膜100之前观察到的放置部分17a的表面的表面粗糙度。

3. 发明专利

JP2012119422A Method for producing silicon film 有权
标题翻译：生产硅胶膜的方法
公开(公告)号：JP2012119422A
公开(公告)日：2012-06-21
申请号：JP2010266421
申请日：2010-11-30
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： OZAWA TAKAHIRO , NAKAJIMA KENJI , JOHN KI-YONG , ITO TAKAHIRO
IPC分类号： H01L21/205 , C01B33/03 , C23C16/24 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a technique by which crystal growth of a high quality silicon film can be performed at high speed.SOLUTION: In a method for producing a silicon film, chloride silane gas 18 is supplied toward a substrate 6 from a direction orthogonal to a surface of the substrate, while the substrate is heated at a temperature of 1,200 to 1,400°C and rotates at a rate of 1,500 to 3,500 rpm. At this time, a supply amount of the chloride silane gas 18 is set to 200 μmol/min or more per 1 cmof the surface of the substrate 6.
摘要翻译：要解决的问题：提供可以高速进行高质量硅膜的晶体生长的技术。解决方案：在制造硅膜的方法中，将氯化硅烷气体18从与基板的表面正交的方向向基板6供给，同时将基板在1,200〜1400℃的温度下加热，以1500至3500转的速度旋转。此时，氯化硅烷气体18的供给量设定为基板6的表面的每1cm×SP POS =“POST”> 2 200μmol/ min以上。（C）2012，JPO＆INPIT

4. 发明专利

JP2011204952A Surface treatment apparatus 有权
标题翻译：表面处理设备
公开(公告)号：JP2011204952A
公开(公告)日：2011-10-13
申请号：JP2010071493
申请日：2010-03-26
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： JIANG YU YAN , INAGAKI MASAHIDE , NAKAJIMA KENJI , MAKINO SOICHIRO , HORINOUCHI SHIGEAKI , ITO TAKAHIRO
IPC分类号： H01L21/205 , C23C16/455 , H01L21/302
CPC分类号： C23C16/45508 , C23C16/45504 , C23C16/45587 , C23C16/45597
摘要： PROBLEM TO BE SOLVED: To reduce flow turbulence caused by a used fluid bumping against the inside wall of an outlet channel when a surface treatment material fluid flows along a substrate surface to be discharged in a surface treatment apparatus.SOLUTION: A surface treatment apparatus 10 is an apparatus in which a disk-like sample-holding plate 14 is provided inside an enclosure 12 constituting a cylindrical circumferential wall. A cylindrical part 22 provided in an upper portion of the enclosure 12 constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate 14 in the enclosure 12 and shaped spreading as it goes farther from the cylindrical part 22 constitutes a fluid discharge channel 24. The fluid discharge channel 24 employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate 14 is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position.
摘要翻译：要解决的问题：当表面处理材料流体沿着要在表面处理设备中排出的基底表面流动时，减少由使用过的液体撞击出口通道的内壁引起的流动湍流。解决方案：表面处理设备10 是在构成圆筒状周壁的外壳12的内部设置盘状的样品保持板14的装置。设置在外壳12的上部的圆柱形部分22构成材料流体供应通道，以及设置在外壳12中的样品保持板14的侧面上的通道，并且当其从圆柱形部分 22构成流体排出通道24.流体排出通道24采用抛物线曲线等，其中样本保持板14的最外周的上端的位置被定义为聚焦位置，并且位置与焦点位置对称地相对的出口的上端被定义为参考位置。

5. 发明专利

JP2010153483A Film deposition apparatus and film deposition method 审中-公开
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：JP2010153483A
公开(公告)日：2010-07-08
申请号：JP2008328117
申请日：2008-12-24
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ITO TAKAHIRO , NAKAJIMA KENJI
IPC分类号： H01L21/205 , C23C16/455 , C23C16/458 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method which can mount a wafer stably and can prevent the wafer from sticking to a susceptor. SOLUTION: The film deposition apparatus which makes a film grow on the surface of a wafer includes a chamber, a susceptor which is installed in the chamber and is provided with a portion on which the wafer is mounted, a heater which heats the wafer mounted on the mounting portion, a material gas introduction means introducing a material gas which produces a solid by thermal reaction into the chamber, an inhibition gas channel which is formed in the susceptor and has the downstream end opening on the outer circumference of the susceptor on the periphery of the mounting portion, and an inhibition gas supply means for supplying the inhibition gas which inhibits the reaction of the material gas to the inhibition gas channel. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种可以稳定地安装晶片并能够防止晶片粘附到基座的成膜装置和成膜方法。＆lt; P＆gt;解决方案：使薄膜在晶片表面生长的成膜装置包括：室，安装在室中的基座，并且设置有安装有晶片的部分;加热器，安装在安装部分上的晶片，将通过热反应产生固体的原料气体引入室中的原料气体引入装置，形成在基座中并且在基座的外周上具有下游端开口的抑制气体通道以及抑制气体供给装置，其用于供给抑制原料气体与抑制气体通道的反应的抑制气体。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010135390A Film deposition device 有权
标题翻译：电影沉积装置
公开(公告)号：JP2010135390A
公开(公告)日：2010-06-17
申请号：JP2008307492
申请日：2008-12-02
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ITO TAKAHIRO , NAKAJIMA KENJI
IPC分类号： H01L21/205 , C23C16/24 , C23C16/455
CPC分类号： C23C16/4411 , C23C16/24 , C23C16/4401 , C23C16/4488 , C23C16/45589 , C23C16/4585 , C30B25/14 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To provide a film deposition device and depositing method for suppressing the deterioration of deposition speed by by-product gas.
SOLUTION: The film deposition device 10 is the device for growing a film on the surface of a wafer 50, including: a chamber 15 where the wafer 50 is arranged inside; a gas introduction means 25 for introducing to the chamber, a substance to be fixed onto the surface of the wafer by reaction on the surface of the wafer 50 and raw material gas to be changed into the by-product gas; and reverse reaction means 30, 34 for generating the raw material gas inside the chamber by the reaction of the by-product gas.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种成膜装置和用于抑制副产物气体沉积速度劣化的沉积方法。解决方案：成膜装置10是用于在晶片50的表面上生长膜的装置，包括：晶片50布置在其中的室15; 气体引入装置25，用于通过在晶片50的表面和要变成副产物气体的原料气体反应而将要固定在晶片表面上的物质引入到腔室; 以及用于通过副产物气体的反应在室内产生原料气体的反向反应装置30,34。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2012248692A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012248692A
公开(公告)日：2012-12-13
申请号：JP2011119481
申请日：2011-05-27
申请人： Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： ITO TAKAHIRO , NAGAI KENICHIRO , NAKAJIMA KENJI
IPC分类号： H01L21/205 , C23C16/24 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a technique which causes a growth of a film on a surface of a semiconductor wafer and is capable of efficiently manufacturing a semiconductor device.SOLUTION: A manufacturing method of a semiconductor device comprises: a carrying-in step of carrying a semiconductor wafer into a chamber in a semiconductor manufacturing device capable of causing a growth of a film on a surface of a semiconductor wafer disposed in the chamber and introducing an etching gas which can etch the semiconductor wafer disposed in the chamber and the film into the chamber; a first etching step of introducing the etching gas into the chamber; a first film formation step of causing a growth of a film on the surface of the semiconductor wafer in the chamber; a replacement step of carrying the semiconductor wafer out of the chamber and carrying another semiconductor wafer into the chamber; a second etching step of introducing the etching gas into the chamber; and a second film formation step of causing a growth of a film on the surface of the semiconductor wafer in the chamber.
摘要翻译：要解决的问题：提供一种使半导体晶片的表面上的膜生长并且能够有效地制造半导体器件的技术。解决方案：半导体器件的制造方法包括：承载半导体晶片进入半导体制造装置中的腔室的载体步骤，该半导体制造装置能够使位于所述半导体器件中的半导体晶片的表面上的膜生长并引入蚀刻气体，其可以将设置在腔室中的半导体晶片和膜蚀刻到腔室中; 将蚀刻气体导入所述室内的第一蚀刻工序; 第一成膜步骤，使所述半导体晶片的所述表面上的膜生长; 将所述半导体晶片从所述室内输送并将另一半导体晶片携带到所述室中的更换步骤; 将蚀刻气体导入到所述室内的第二蚀刻工序; 以及在室内使半导体晶片的表面上的膜生长的第二成膜工序。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012182183A Vapor deposition apparatus and vapor deposition method 有权
标题翻译：蒸气沉积装置和蒸气沉积方法
公开(公告)号：JP2012182183A
公开(公告)日：2012-09-20
申请号：JP2011042290
申请日：2011-02-28
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： OZAWA TAKAHIRO , NAKAJIMA KENJI , JOHN KI-YONG , ITO TAKAHIRO
IPC分类号： H01L21/205 , C01B33/02 , C23C16/452
CPC分类号： H01L21/0262 , C01B33/027 , C01B33/029 , C23C16/24 , C23C16/452 , C23C16/45561 , H01L21/0237 , H01L21/02532
摘要： PROBLEM TO BE SOLVED: To provide a technology for increasing a speed of crystal growth in a silicon film.SOLUTION: A vapor deposition apparatus 10 comprises: a vapor deposition chamber 36; a heating chamber 8; a mixing chamber 38; a first storage shed 42 for storing a trichlorosilane gas; and a second storage shed 40 for storing a silane-based gas which reacts with a hydrochloric acid gas. The heating chamber 8 communicates with the first storage shed 42 and the mixing chamber 38, heats the trichlorosilane gas and then supplies the trichlorosilane gas to the mixing chamber 38. The mixing chamber 38 communicates with the second storage shed 40 and the vapor deposition chamber 36, mixes the gas supplied from the heating chamber 8 with the silane-based gas and then supplies the mixed gas 34 to the vapor deposition chamber 36. A chamber temperature of the heating chamber 8 is higher than a chamber temperature of the mixing chamber 38.
摘要翻译：要解决的问题：提供一种用于提高硅膜中的晶体生长速度的技术。气相沉积装置10包括：气相沉积室36; 加热室8; 混合室38; 用于存储三氯硅烷气体的第一储存棚42; 以及用于储存与盐酸气体反应的硅烷类气体的第二储存棚40。加热室8与第一储存棚42和混合室38连通，加热三氯硅烷气体，然后将三氯硅烷气体供应到混合室38.混合室38与第二储存棚40和蒸镀室36连通将从加热室8供给的气体与硅烷类气体混合，然后将混合气体34供给蒸镀室36.加热室8的室温高于混合室38的室温。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011243634A Method of growing semiconductor film in vapor phase 有权
标题翻译：在蒸气相中生长半导体膜的方法
公开(公告)号：JP2011243634A
公开(公告)日：2011-12-01
申请号：JP2010112137
申请日：2010-05-14
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： OZAWA TAKAHIRO , NAKAJIMA KENJI , JOHN KI-YONG , ITO TAKAHIRO
IPC分类号： H01L21/205 , C23C16/24
CPC分类号： H01L21/0262 , C23C16/24 , C30B29/06 , C30B33/06 , H01L21/0237 , H01L21/02389 , H01L21/02532
摘要： PROBLEM TO BE SOLVED: To provide, of the vapor phase growth techniques, a technique for increasing the growth rate of a semiconductor film.SOLUTION: A method of growing a semiconductor film in vapor phase includes the step of supplying a mixed material gas containing silane chloride gas and carrier gas to a surface of a substrate heated to a temperature of 1200-1400°C from a direction orthogonal to the surface. The supply amount of the silane chloride gas per square centimeter of the substrate surface is 200 μmol/min or larger. The carrier gas contains at least one kind of gas selected from argon, xenon, krypton and neon, and hydrogen gas.

10. 发明专利

JP2011187887A Method of manufacturing epitaxial wafer 审中-公开
标题翻译：制造外延波形的方法
公开(公告)号：JP2011187887A
公开(公告)日：2011-09-22
申请号：JP2010054485
申请日：2010-03-11
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ITO TAKAHIRO , NAKAJIMA KENJI
IPC分类号： H01L21/205 , C23C16/24
摘要： PROBLEM TO BE SOLVED: To provide a technology for growing a thick single-crystal layer on a semiconductor wafer without growing a crystal layer in an angulated shape on an end surface of the semiconductor wafer.
SOLUTION: A method of manufacturing an epitaxial wafer having the single-crystal layer 30 formed on the semiconductor wafer 10 includes an amorphous layer forming process of forming an amorphous layer 20 on the end surface 16 of the semiconductor wafer 10 having a flat upper surface 12, a flat lower surface 14, and the end surface 16 connecting the upper surface 12 and lower source 14, and a single-crystal layer forming process of vapor-phase growing the single-crystal layer 30 having a thickness of ≥80 μm on the upper surface 12 of the semiconductor wafer 10 after the amorphous layer forming process.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在半导体晶片上生长厚单晶层的技术，而不会在半导体晶片的端面上生长呈成角度的晶体层。解决方案：制造具有形成在半导体晶片10上的单晶层30的外延晶片的方法包括在具有平坦的半导体晶片10的端面16上形成非晶层20的非晶层形成工艺上表面12，平坦的下表面14和连接上表面12和下源14的端表面16以及厚度≥80的气相生长单晶层30的单晶层形成工艺在非晶层形成工艺之后的半导体晶片10的上表面12上。版权所有（C）2011，JPO＆INPIT

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