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1. 发明专利

JP2012234908A Silicon carbide semiconductor device 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：JP2012234908A
公开(公告)日：2012-11-29
申请号：JP2011101207
申请日：2011-04-28
申请人： Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： WATANABE HIROKI , MIYAHARA SHINICHIRO , TAKATANI HIDESHI , SUGIMOTO MASAHIRO , WATANABE YUKIHIKO , SOEJIMA SHIGEMASA , ISHIKAWA TAKESHI
IPC分类号： H01L29/12 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7397
摘要： PROBLEM TO BE SOLVED: To minimize decline of the isolation voltage and the life of a gate insulating film, by suppressing unevenness of the side surface and the bottom surface of a trench.SOLUTION: A trench 6 is formed so as to have the direction perpendicular to the direction, i.e. the off direction of an SiC semiconductor substrate, as the longitudinal direction. Since a step bunching SB does not traverse the trench 6, formation of unevenness on the side surface and the bottom surface of the trench 6 due to the step bunching SB can be substantially prevented. Consequently, a gate oxide film 8 is formed on the side surface and the bottom surface of the trench 6 having no unevenness, and decline of the isolation voltage and the life of the gate oxide film 8 can be minimized.
摘要翻译：要解决的问题：通过抑制沟槽的侧表面和底表面的不均匀性来最小化隔离电压的下降和栅极绝缘膜的寿命。解决方案：形成沟槽6，使其具有与<11-20>方向垂直的<1-100>方向，即SiC半导体衬底的关闭方向作为纵向方向。由于台阶聚束SB不穿过沟槽6，所以可以基本上防止由于台阶聚束SB而在沟槽6的侧面和底面上形成凹凸。因此，在不具有不均匀性的沟槽6的侧面和底面上形成栅氧化膜8，能够使隔离电压下降和栅极氧化膜8的使用寿命最小化。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012116732A Method of manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的方法
公开(公告)号：JP2012116732A
公开(公告)日：2012-06-21
申请号：JP2010270295
申请日：2010-12-03
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： WATANABE HIROKI , KITO YASUO , FURUKAWA TAIJI , YAMAMOTO KENSAKU , TAKATANI HIDESHI , SUGIMOTO MASAHIRO , WATANABE YUKIHIKO , SOEJIMA SHIGEMASA , ISHIKAWA TAKESHI
IPC分类号： C30B29/36 , C30B25/20 , H01L21/205
CPC分类号： H01L21/0262 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/02658 , H01L21/046 , H01L21/0475 , H01L29/04
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal capable of reducing threading dislocations while suppressing transfer of polymorphism and dislocation without performing sequential lamination of p-layers and n-layers.SOLUTION: A very deep etch pit 1b is formed in the position corresponding to a leak portion by performing molten KOH etching and the like after Al ion implantation and activation annealing, based on findings that a dislocation causing leak such as a drain leak of a vertical MOSFET is a threading screw dislocation. When an SiC growth layer 4 is epitaxially grown on the surface of the etch pit 1b in such a condition that portions grown in the side wall parts of the etch pit 1b are brought into contact mutually, the dislocation is prevented from being transferred to the SiC growth layer 4. In this way, the SiC growth layer 4 having the surface including no threading screw dislocation 1a can be obtained. Therefore, without performing sequential lamination of p-layers and n-layers, the SiC single crystal capable of reducing threading screw dislocations can be produced while suppressing transfer of polymorphism and dislocation.
摘要翻译：要解决的问题：提供一种能够在不进行p层和n层的顺序层压的同时抑制多晶型转移和位错的同时能够减少穿透位错的SiC单晶的制造方法。解决方案：通过在Al离子注入和活化退火之后进行熔融KOH蚀刻等形成在与泄漏部分相对应的位置中的非常深的蚀刻坑1b，基于发现泄漏如泄漏泄漏的位错的垂直MOSFET是螺纹螺钉错位。当在蚀刻凹坑1b的表面上外延生长SiC生长层4，使得在蚀刻坑1b的侧壁部分中生长的部分相互接触的情况下，防止位错转移到SiC 以这种方式，可以获得具有不包括螺纹螺纹位错1a的表面的SiC生长层4。因此，在不进行p层和n层的顺序层叠的情况下，能够抑制多晶型和位错的转移而能够减少螺纹位错的SiC单晶。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011168453A Method for producing silicon carbide substrate 有权
标题翻译：生产碳化硅基材的方法
公开(公告)号：JP2011168453A
公开(公告)日：2011-09-01
申请号：JP2010034669
申请日：2010-02-19
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： WATANABE HIROKI , KITO YASUO , YAMAMOTO KENSAKU , TAKATANI HIDESHI , SUGIMOTO MASAHIRO , MORIMOTO ATSUSHI , WATANABE YUKIHIKO , SOEJIMA SHIGEMASA , ISHIKAWA TAKESHI
IPC分类号： C30B29/36 , C30B23/06 , H01L21/20 , H01L21/265
CPC分类号： H01L21/02529 , C30B29/36 , C30B33/02 , H01L21/02378 , H01L21/02658 , H01L21/02667 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC substrate, by which the production process can be simplified and the presence of a screw dislocation in a surface layer can be suppressed. SOLUTION: The production method includes: a step of preparing a defect-containing substrate 2 comprising silicon carbide, having a major surface and a back surface as the opposite face to the major surface, and including a screw dislocation 1 in a surface layer 2a; a first external force application step of applying an external force to the major surface of the defect-containing substrate 2 to decrease crystallinity of the surface layer 2a; and a first heat treatment step of recovering the crystallinity of the surface layer 2a by heat treating the defect-containing substrate 2 after the external force application step. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种SiC基板的制造方法，能够简化制造工序，能够抑制表面层的螺旋位错的存在。解决方案：制备方法包括：制备含有主要表面和后表面作为主表面的相对面的碳化硅的含缺陷基材2的步骤，在表面上包括螺旋位错1 层2a; 第一外力施加步骤，向所述含缺陷的衬底2的主表面施加外力以降低表面层2a的结晶度; 以及第一热处理步骤，通过在外力施加步骤之后热处理含缺陷的基板2来恢复表面层2a的结晶度。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2013214660A Silicon carbide semiconductor device and manufacturing method of the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2013214660A
公开(公告)日：2013-10-17
申请号：JP2012084912
申请日：2012-04-03
申请人： Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： WATANABE HIROKI , YAMAMOTO KENSAKU , MORIMOTO JUN , NARUOKA HIDEKI , WATANABE YUKIHIKO , SOEJIMA SHIGEMASA
IPC分类号： H01L29/78 , H01L21/20 , H01L21/324 , H01L21/336 , H01L29/12
摘要： PROBLEM TO BE SOLVED: To reduce drain leakage due to point defects.SOLUTION: In a silicon carbide semiconductor device, a depth X of a peak position in a distribution of the number of point defects along a depth direction from a surface of a semiconductor substrate and a PN junction position Y formed by an ntype drift layer 2 and a p type base region 3 from the surface satisfy a relationship represented as X
摘要翻译：要解决的问题：减少由于点缺陷引起的漏极泄漏。解决方案：在碳化硅半导体器件中，从半导体衬底的表面沿深度方向的点缺陷数的分布中的峰值位置的深度X 并且从表面形成的n型漂移层2和ap型基极区域3形成的PN结位置Y满足表示为X

5. 发明专利

JP2012241638A Fuel injection control device of internal combustion engine 审中-公开
标题翻译：内燃机燃油喷射控制装置
公开(公告)号：JP2012241638A
公开(公告)日：2012-12-10
申请号：JP2011113244
申请日：2011-05-20
申请人： Nippon Soken Inc , 株式会社日本自動車部品総合研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMASHITA YUTO , WATANABE HIROKI , NISHIDA KENTARO , HASEGAWA AKIRA
IPC分类号： F02D41/38 , F02B23/06 , F02D41/04 , F02M61/18
CPC分类号： Y02T10/125
摘要： PROBLEM TO BE SOLVED: To provide a fuel injection control device of an internal combustion engine capable of suppressing the occurrence of smoke.SOLUTION: The fuel injection control device is applied to the internal combustion engine 1 with a fuel injection valve 9 directly injecting a fuel into a cylinder 2, and capable of controlling the operation of the fuel injection valve 9 so that main injection and after-injection performed after the main injection are performed during one cycle as fuel injection into the cylinder 2. A position of a flame of a fuel injected in the main injection is estimated, and an injection rate of the fuel injection valve 9 in the after-injection is changed to prevent a fuel injected in the after-injection from reaching the estimated position of the flame.
摘要翻译：要解决的问题：提供能够抑制烟雾发生的内燃机的燃料喷射控制装置。解决方案：燃料喷射控制装置用燃料喷射阀9将燃料直接喷射到气缸2中并且能够控制燃料喷射阀9的操作使得主喷射和在一次循环中执行在主喷射之后执行的后喷射作为燃料喷射到气缸2中。估计在主喷射中喷射的燃料的火焰的位置，并且燃料喷射阀9在后面的喷射速率喷射被改变以防止在后喷射中喷射的燃料达到火焰的估计位置。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2014031722A Internal combustion engine with egr device 审中-公开
标题翻译：具有EGR装置的内燃机
公开(公告)号：JP2014031722A
公开(公告)日：2014-02-20
申请号：JP2012170854
申请日：2012-08-01
申请人： Nippon Soken Inc , 株式会社日本自動車部品総合研究所 , Toyota Motor Corp , トヨタ自動車株式会社
发明人： OSHIMA KENJI , WATANABE HIROKI , YAMASHITA AKIRA
IPC分类号： F02M25/07
CPC分类号： Y02T10/121
摘要： PROBLEM TO BE SOLVED: To provide an internal combustion engine with an EGR device capable of providing both an effect achieved by increasing coolant temperature using heat of exhaust gas, and an effect achieved by conducting high temperature exhaust gas into an intake passage as it is.SOLUTION: An internal combustion engine with an EGR device includes first exhaust gas routes 6, 11, and 14 for flowing at least a part of exhaust gas flowing in an exhaust passage 24 into an intake passage 18 after passing through an EGR cooler 11, second exhaust gas routes 6, 10, and 14 for flowing at least a part of exhaust gas flowing in the exhaust passage 24 into the intake passage 18 without passing through the EGR cooler 11, and third exhaust gas routes 6, 11, and 8 for returning at least a part of exhaust gas flowing in the exhaust passage 24 into an exhaust passage 5 after passing through the EGR cooler 11. Exhaust gas passage selection mechanisms 12, 13, 25, and 27 select either the first exhaust gas routes or a combination of the second exhaust gas routes and the third exhaust gas routes.
摘要翻译：要解决的问题：提供具有EGR装置的内燃机，该EGR装置能够提供通过使用排气的热量增加冷却剂温度而实现的效果，以及通过将高温排气原样进入进气通道而实现的效果。解决方案：具有EGR装置的内燃机包括：第一排气路线6,11和14，用于使通过EGR冷却器11的排气通道24中流动的排气的至少一部分流入进气通道18，废气路线6,10和14，用于使排气通道24中流动的废气的至少一部分不经过EGR冷却器11流入进气通道18，第三排气路线6,11和8用于返回废气通道选择机构12,13,25,27中的至少一部分排气在通过EGR冷却器11之后流入排气通道5.排气通道选择机构12,13,25,27选择第一exhaus t气体路线或第二废气路线和第三排气路线的组合。

7. 发明专利

JP2013256890A Fuel injection control device for internal combustion engine 有权
标题翻译：用于内燃机的燃油喷射控制装置
公开(公告)号：JP2013256890A
公开(公告)日：2013-12-26
申请号：JP2012132819
申请日：2012-06-12
申请人： Nippon Soken Inc , 株式会社日本自動車部品総合研究所 , Denso Corp , 株式会社デンソー
发明人： WATANABE HIROKI , ITO MASAHARU , HOSHI MASAYA
IPC分类号： F02D41/34 , F02D45/00
CPC分类号： Y02T10/44
摘要： PROBLEM TO BE SOLVED: To provide a fuel injection control device for an internal combustion engine in which an injection rate is kept even when fuel is injected while being divided in a plurality of times without requiring the improvement of a fuel injection valve.SOLUTION: When a plurality of injections of fuel from an injector 12 are repeated, a pressure wave propagated from the injector 12 to a common rail 13 side by the intermittent fuel injection is reflected to the injector 12 side in a fuel passage from the injector 12 to the common rail 13. Thereby, the pressure of the fuel in the common rail 13 by the injection of the fuel is lowered, the pressure of the fuel inside the injector 12 is increased by synthesizing the reflected pressure wave. An injection start timing setting part sets a period between the former fuel injection and the next fuel injection in consideration of pressure wave generated in the former injection, on execution of a plurality of injections. As a result, the next fuel injection continuing the former fuel injection is performed by the pressure increased by the reflected pressure wave.
摘要翻译：要解决的问题：提供一种用于内燃机的燃料喷射控制装置，即使在不需要改进燃料喷射阀的情况下多次分配燃料的情况下也能够保持喷射率。另外，重复来自喷射器12的燃料的多次喷射，通过间歇燃料喷射从喷射器12传播到共轨13侧的压力波被从喷射器12反射到燃料通道中的喷射器12侧由此，通过喷射燃料而在共轨13中的燃料的压力降低，通过合成反射的压力波来增加喷射器12内的燃料的压力。考虑到在前次喷射中产生的压力波，在执行多次喷射时，喷射开始定时设定部分设定在前一个燃料喷射和下次燃料喷射之间的时间段。结果，继续前述燃料喷射的下一个燃料喷射是通过由反射的压力波增加的压力进行的。

8. 发明专利

JP2013217341A Fuel injection control device 有权
标题翻译：燃油喷射控制装置
公开(公告)号：JP2013217341A
公开(公告)日：2013-10-24
申请号：JP2012090288
申请日：2012-04-11
申请人： Nippon Soken Inc , 株式会社日本自動車部品総合研究所 , Denso Corp , 株式会社デンソー
发明人： NISHIGORI MASATAKA , ITO MASAHARU , WATANABE HIROKI , KAKEHASHI NOBUHISA
IPC分类号： F02D41/38 , F02D41/40 , F02D45/00 , F02M51/00
CPC分类号： Y02T10/44
摘要： PROBLEM TO BE SOLVED: To provide a fuel injection control device that carries out pilot injection prior to main injection, in which good combustion can be maintained while suppressing degradation in accuracy of an injection amount of the main injection.SOLUTION: A control circuit 90 as a fuel injection control device for operating a fuel injection valve 70 sets an interval INT from a time to start injection of a first pilot injection FP which is carried out prior to main injection M, to a time to start injection of a second pilot injection LP in such a manner that a pressure pulsation in an opposite phase with respect to a pressure pulsation induced by the first pilot injection FP in the fuel injection valve 70 is to be induced in the fuel injection valve 70 by the second pilot injection LP; and controls the fuel injection valve 70 to inject fuel based on the interval INT.
摘要翻译：要解决的问题：提供一种在主喷射之前执行先导喷射的燃料喷射控制装置，其中可以保持良好的燃烧，同时抑制主喷射的喷射量的精度降低。解决方案：控制电路90 用于操作燃料喷射阀70的燃料喷射控制装置将从在主喷射M之前执行的第一先导喷射FP的时间开始喷射到开始喷射第二喷液LP的时间间隔INT 通过第二先导喷射LP在燃料喷射阀70中引起相对于由燃料喷射阀70中的第一引燃喷射FP引起的压力脉动的相反相位的压力脉动; 并且控制燃料喷射阀70基于间隔INT喷射燃料。

9. 发明专利

JP2013032768A Fuel injection control system for internal combustion engine 有权
标题翻译：内燃机燃油喷射控制系统
公开(公告)号：JP2013032768A
公开(公告)日：2013-02-14
申请号：JP2012063621
申请日：2012-03-21
申请人： Denso Corp , 株式会社デンソー , Nippon Soken Inc , 株式会社日本自動車部品総合研究所
发明人： HOSHI MASAYA , SASAKI SATORU , WATANABE HIROKI , TODA NAOKI
IPC分类号： F02D41/38 , F02D45/00
CPC分类号： F02D35/023 , F02D41/0025 , F02D41/402 , F02D41/403 , F02D41/405 , F02M61/1813 , Y02T10/44
摘要： PROBLEM TO BE SOLVED: To provide a fuel injection control system for an internal combustion engine which improves a combustion amount of fuel in pilot injection regardless of a fuel property.SOLUTION: When the combustion amount of the fuel in the pilot injection is determined not to be in a predetermined range of the combustion amount, a combustion amount changing part 45 increases a frequency of the pilot injection and decreases the combustion quantity for each frequency of the pilot injection. By increasing the frequency of the pilot injection and decreasing the combustion amount for each frequency of the pilot injection, the combustion amount changing part 45 generates a comparatively enriched gaseous mixture near an injector 12. As a result, even in the fuel with a low cetane number, the combustion of the fuel in the pilot injection is accelerated, thus increasing the combustion amount.
摘要翻译：解决的问题：提供一种用于内燃机的燃料喷射控制系统，该燃料喷射控制系统改善了先导喷射中的燃料的燃烧量，而不管燃料性质如何。解决方案：当先导喷射中的燃料的燃烧量被确定为不在燃烧量的预定范围内时，燃烧量改变部分45增加引燃喷射的频率并且降低每个燃烧量的燃烧量飞行员注射的频率。通过增加先导喷射的频率并减少先导喷射的每个频率的燃烧量，燃烧量变化部分45在喷射器12附近产生相对富集的气体混合物。结果，即使在低十六烷值的燃料中引燃喷射中的燃料燃烧加速，从而增加燃烧量。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2011236124A Silicon carbide single crystal substrate and silicon carbide single crystal epitaxial wafer 审中-公开
标题翻译：单晶碳化硅单晶基体和碳化硅单晶水晶外壳
公开(公告)号：JP2011236124A
公开(公告)日：2011-11-24
申请号：JP2011139484
申请日：2011-06-23
申请人： Denso Corp , 株式会社デンソー
发明人： KITO YASUO , WATANABE HIROKI , NAGAI HIRONORI , YAMAMOTO KENSAKU , OKUNO HIDEKAZU
IPC分类号： C30B29/36 , C23C16/42 , H01L21/205 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To define the direction of the dislocation line of a threading dislocation to suppress the deterioration of a device characteristics and the lowering of yield.SOLUTION: The direction of the dislocation line of the threading dislocation 3 is arranged to make the direction of the threading dislocation 3 parallel to [0001] c-axis. The threading dislocation 3 having a dislocation line in the [0001] c-axis direction is vertical to the direction of the dislocation line of the basal plane dislocation, so that the threading dislocation 3 can not be an extension dislocation in C-plane, and stacking dislocation is not generated. Therefore, the device characteristics are improved by forming an electronic device to an SiC single crystal substrate having the direction of dislocation line of the threading dislocation 3 of being the [0001] c-axis, and an SiC semiconductor device with improved yield having no deterioration is formed.
摘要翻译：要解决的问题：定义穿透位错的位错线的方向以抑制器件特性的劣化和产率的降低。解决方案：穿透位错3的位错线的方向被布置成使穿线位错3的方向平行于[0001] c轴。在[0001]轴方向具有位错线的穿线位错3垂直于基面位错的位错线的方向，使得穿透位错3不能是C面中的延伸位错，并且不产生堆垛错位。因此，通过在具有作为[0001] c轴的穿透位错3的位错线的方向的SiC单晶衬底上形成电子器件，并且具有不劣化的产率提高的SiC半导体器件来改善器件特性形成了。版权所有（C）2012，JPO＆INPIT

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