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1. 发明专利

JP2012064658A Silicon carbide semiconductor device and manufacturing method thereof 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2012064658A
公开(公告)日：2012-03-29
申请号：JP2010205789
申请日：2010-09-14
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： YAMAMOTO TOSHIMASA , SUGIMOTO MASAHIRO , TAKATANI HIDESHI , MORIMOTO ATSUSHI , SOEJIMA SHIGEMASA , ISHIKAWA TAKESHI , WATANABE YUKIHIKO
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L29/12 , H01L29/739
CPC分类号： H01L29/66068 , H01L29/086 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To suppress increase in contact resistance between a source region and a source electrode when removing a damage in a trench.SOLUTION: In a second region 4b of an ntype source region 4, a place at some depth from a top surface has a relatively low impurity concentration instead of high impurity concentration. With this configuration, even if a portion of relatively low impurity concentration in the second region 4b of the ntype source region 4 remains slightly or disappears through a damage removing step, for enhanced oxidation at the portion of high impurity concentration in the second region 4b, a region which goes through enhanced oxidation decreases because oxidation takes time at the portion of relatively low impurity concentration. Thus, a contact part to a source electrode 9 in the second region 4b of the ntype source region 4 is prevented from disappearing, to suppress increase in contact resistance between the ntype source region 4 and the source electrode 9.
摘要翻译：要解决的问题：为了在消除沟槽中的损坏时抑制源极区域和源极电极之间的接触电阻的增加。解决方案：在n + 型源极区域4的第二区域4b中，距离顶表面某处深度的位置具有相对较低的杂质浓度而不是高杂质浓度。利用这种结构，即使在n + 型源极区域4的第二区域4b中的相对低的杂质浓度的一部分通过损伤去除步骤保持轻微或消失，为了增强在第二区域4b中的高杂质浓度部分处的氧化，经过增强氧化的区域降低，因为在相对低的杂质浓度部分的氧化需要时间。因此，防止在n + 型源极区域4的第二区域4b中的源极电极9的接触部分消失，以抑制n < SP POS =“POST”> + 类型源区域4和源极9.版权所有：（C）2012，JPO＆INPIT

2. 发明专利

JP2009117593A Silicon carbide semiconductor apparatus and method of manufacturing the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2009117593A
公开(公告)日：2009-05-28
申请号：JP2007288545
申请日：2007-11-06
申请人： Denso Corp , 株式会社デンソー
发明人： SUZUKI MASAHIRO , TAKEUCHI YUICHI , ENDO TAKESHI , OKUNO HIDEKAZU , YAMAMOTO TOSHIMASA
IPC分类号： H01L29/12 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/47 , H01L29/66068 , H01L29/7391 , H01L29/7397 , H01L29/7828
摘要： PROBLEM TO BE SOLVED: To provide an SiC semiconductor apparatus which alleviates electric field concentration on a gate oxide film formed in a trench.
SOLUTION: The SiC semiconductor apparatus includes a p
+ -type deep layer 9 as deep as or deeper than a trench 5. This causes a depletion layer at a PN junction between p
+ -type deep layer 9 and an n
- type drift layer 2 to greatly extend toward the n
- type drift layer 2, which makes it difficult for a high voltage generated as a result of the effect of a drain voltage to enter a gate oxide film 6. This alleviates electric field concentration in the gate oxide film 6, especially electric field concentration on the bottom of the trench 5 in the gate oxide film 6. Hence the destruction of the gate oxide film 6 is prevented.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种减轻形成在沟槽中的栅极氧化膜上的电场浓度的SiC半导体装置。解决方案：SiC半导体器件包括与沟槽5一样深或深的ap + / SP>型深层9。这导致p结点处的耗尽层p / SP>型深层9和n - / SP>型漂移层2，以大大地朝向n - / SP>型漂移层2延伸，这使得难以进行高电压这是由于漏极电压进入栅极氧化膜6的结果而产生的。这减轻了栅极氧化膜6中的电场浓度，特别是在栅极氧化膜6中的沟槽5的底部上的电场集中。因此防止了栅氧化膜6的破坏。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2004219080A Semiconductor sensor and its manufacturing method 审中-公开
标题翻译：半导体传感器及其制造方法
公开(公告)号：JP2004219080A
公开(公告)日：2004-08-05
申请号：JP2003003074
申请日：2003-01-09
申请人： Denso Corp , 株式会社デンソー
发明人： WADO HIROYUKI , IWAKI TAKAO , YAMAMOTO TOSHIMASA , NAKAE YOSHIKAZU
IPC分类号： G01F1/692 , H01L21/822 , H01L27/04 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor sensor for appropriately coping with the avoidance of a decrease in detection precision by a change in resistance and the simplification of a manufacturing process when a semiconductor is used as a resistor. SOLUTION: A silicon oxide film 20 is formed on a semiconductor substrate 10 made of a single crystal silicon. Then, on the silicon oxide film 20, an upstream side heater Rha, a downstream side heater Rhb, lead sections L2, L5, an upstream side thermometer Rka, and a downstream thermometer Rkb are formed by silicon. Elimination regions R1-R5 are formed at both the sides adjacent to the upstream side heater Rha, the downstream side heater Rhb, the upstream side thermometer Rka, and the downstream side thermometer Rkb. The upstream side heater Rha, the downstream side heater Rhb, and the like are made of monocrystallized silicon by allowing amorphous silicon to be subjected to solid-phase growth with a semiconductor substrate 10 exposed by the elimination regions R1 - R5 as a seed. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体传感器，用于通过电阻的变化避免检测精度的降低，并且当使用半导体作为电阻器时，简化制造工艺。解决方案：在由单晶硅制成的半导体衬底10上形成氧化硅膜20。然后，在硅氧化膜20上形成上游侧加热器Rha，下游侧加热器Rhb，引线部L2，L5，上游侧温度计Rka，下游温度计Rkb。消除区域R1-R5形成在与上游侧加热器Rha，下游侧加热器Rhb，上游侧温度计Rka和下游侧温度计Rkb相邻的两侧。上游侧加热器Rha，下游侧加热器Rhb等由单晶硅制成，通过以消除区域R1-R5作为种子暴露的半导体衬底10，使非晶硅进行固相生长。版权所有（C）2004，JPO＆NCIPI

4. 发明专利

JP2004205498A Flow sensor 审中-公开
公开(公告)号：JP2004205498A
公开(公告)日：2004-07-22
申请号：JP2003381757
申请日：2003-11-11
申请人： Denso Corp , 株式会社デンソー
发明人： IWAKI TAKAO , WADO HIROYUKI , ISOMURA KIYOKAZU , TESHIGAWARA AKIHIKO , ABE RYUICHIRO , YAMAMOTO TOSHIMASA
IPC分类号： G01F1/692
摘要： PROBLEM TO BE SOLVED: To provide a flow sensor capable of increasing its sensitivity favorably, suppressing wastage of power consumption. SOLUTION: On a semiconductor substrate 10, a silicon oxide film 20 is formed. On the film 20, an upstream-side heater Rha, a downstream-side heater Rhb, lead sections L1-L6, an upstream-side thermometer Rka, and a downstream-side thermometer Rkb are formed. These upstream-side and downstream-side heaters Rha, Rhb are made of single-crystal silicon, into which boron has been injected, and their wire width is set to "7μm or larger". COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2004004119A Semiconductor dynamic quantity sensor 审中-公开
标题翻译：半导体动态数量传感器
公开(公告)号：JP2004004119A
公开(公告)日：2004-01-08
申请号：JP2003287663
申请日：2003-08-06
申请人： Denso Corp , 株式会社デンソー
发明人： YAMAMOTO TOSHIMASA , AO KENICHI , TAKEUCHI YUKIHIRO
IPC分类号： G01C19/56 , B81B3/00 , G01C19/574 , G01C19/5769 , G01P15/125 , H01L29/84 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To eliminate an accelerated component and detect a yaw rate with high accuracy. SOLUTION: The sensor includes a base plate 48, two beam structures 81 and 82 arranged above the base plate in a predetermined interval from the base plate to be adjacent with each other. The beam structures 81 and 82 each include a mass section slidable to a predetermined sliding direction parallel to a surface of the base plate. The first and second beam structures are also arranged so as to oscillate in an opposite direction along a predetermined oscillating direction. Because the beam structures 81 and 82 linearly oscillates in the predetermined direction, the accelerated component can be eliminated with high accuracy when detecting a difference in yaw rate respectively detected from the two beam structures. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：消除加速分量并以高精度检测偏航率。解决方案：传感器包括基板48，两个梁结构81和82，两个梁结构81和82以预定间隔从基板设置在基板上方，以彼此相邻。梁结构81和82各自包括可滑动到平行于基板的表面的预定滑动方向的质量部分。第一和第二光束结构也被布置为沿着预定的振荡方向在相反的方向振荡。因为光束结构81和82在预定方向上线性地振荡，所以当检测到从两个光束结构分别检测到的横摆角速度差时，可以高精度地消除加速分量。版权所有（C）2004，JPO

6. 发明专利

JP2002214013A METHOD OF INSPECTING SENSOR HAVING THIN FILM 失效
公开(公告)号：JP2002214013A
公开(公告)日：2002-07-31
申请号：JP2001010678
申请日：2001-01-18
申请人： DENSO CORP
发明人： WADO HIROYUKI , YAMAMOTO TOSHIMASA , NAKAE YOSHIKAZU , KONO YASUSHI
IPC分类号： G01F1/68 , G01F1/692 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a method of simply inspecting the mechanical strength of a thin film of a sensor. SOLUTION: Flow sensors 10 having holes 3 and thin films 4 across the openings of the holes 3 are formed on a substrate 1. In this condition, a pressure is applied to each thin film 4, those sensors 10 having the thin films 4 broken by the applied pressure are regarded as defectives and other sensors 10 having the thin films 4 not broken are regarded as non-defectives, and only the latter sensors are used as flow sensors 10.

7. 发明专利

JP2013137228A Temperature detection element 有权
标题翻译：温度检测元件
公开(公告)号：JP2013137228A
公开(公告)日：2013-07-11
申请号：JP2011288041
申请日：2011-12-28
申请人： Toyota Motor Corp , トヨタ自動車株式会社 , Denso Corp , 株式会社デンソー
发明人： SOENO AKITAKA , YAMAMOTO TOSHIMASA , WATANABE YUKIHIKO , SOEJIMA SHIGEMASA
IPC分类号： G01K7/16
摘要： PROBLEM TO BE SOLVED: To provide a temperature detection element that uses a semiconductor and is capable of detecting high temperature.SOLUTION: A temperature detection element includes a SiC substrate. A dope region where two or more kinds of impurities having the same conductivity type and different activation energy are doped is formed on the SiC substrate. On the surface of the SiC substrate, two electrodes to be in electrical conduction with the dope region are formed. The action of two or more kinds of impurities enables detection of temperature in a wider temperature range.
摘要翻译：要解决的问题：提供使用半导体并能够检测高温的温度检测元件。解决方案：温度检测元件包括SiC衬底。在SiC衬底上形成掺杂有相同导电类型和不同活化能的两种或更多种杂质的掺杂区域。在SiC衬底的表面上，形成与掺杂区域导通的两个电极。两种或更多种杂质的作用使得能够在更宽的温度范围内检测温度。

8. 发明专利

JP2008233091A Manufacturing method of semiconductor sensor 有权
标题翻译：半导体传感器的制造方法
公开(公告)号：JP2008233091A
公开(公告)日：2008-10-02
申请号：JP2008088009
申请日：2008-03-28
申请人： Denso Corp , 株式会社デンソー
发明人： IWAKI TAKAO , WADO HIROYUKI , YAMAMOTO TOSHIMASA
IPC分类号： G01F1/692 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor sensor capable of suitably securing its sensing accuracy in sensing a predetermined physical quantity by using a resistor; and its manufacturing method. SOLUTION: On a semiconductor substrate 10, a silicon oxide film 20 is formed. On the silicon oxide film 20, an upstream-side heater Rha, a downstream-side heater Rhb, lead parts L2 and L5 and an upstream-side thermometer Rka are respectively formed. The upstream-side heater Rha, the downstream-side heater Rhb, the lead parts L2 and L5 and the upstream-side thermometer Rka are covered with a silicon nitride film 40. In this case, all of the upstream-side heater Rha, the downstream-side heater Rhb, the upstream-side thermometer Rka and the lead parts L2 and L5 are each formed with a semiconductor film. Regions within the semiconductor films constituting the upstream-side heater Rha, the downstream-side heater Rhb, and the upstream-side thermometer Rka are locally formed into thin films. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够通过使用电阻器适当地确保其感测预定物理量的感测精度的半导体传感器; 及其制造方法。解决方案：在半导体衬底10上形成氧化硅膜20。在氧化硅膜20上分别形成上游侧加热器Rha，下游侧加热器Rhb，引线部分L2和L5以及上游侧温度计Rka。上游侧加热器Rha，下游侧加热器Rhb，引导部分L2和L5以及上游侧温度计Rka被氮化硅膜40覆盖。在这种情况下，所有上游侧加热器Rha，下游侧加热器Rhb，上游侧温度计Rka和引线部分L2和L5各自形成有半导体膜。构成上游侧加热器Rha，下游侧加热器Rhb和上游侧温度计Rka的半导体膜内的区域局部地形成为薄膜。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008064768A Semiconductor sensor and its manufacturing method 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：JP2008064768A
公开(公告)日：2008-03-21
申请号：JP2007292951
申请日：2007-11-12
申请人： Denso Corp , 株式会社デンソー
发明人： IWAKI TAKAO , WADO HIROYUKI , YAMAMOTO TOSHIMASA
IPC分类号： G01F1/692
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor sensor that can appropriately secure its sensing precision at the time of sensing a prescribed physical quantity by using a resistor. SOLUTION: In this semiconductor sensor, a silicon oxide film 120 is formed on a semiconductor substrate 110. In addition, an upstream-side heater Rha, a downstream-side heater Rhb, lead sections L2 and L5, and upstream-side thermometers Rka are formed on the silicon oxide film 120. The heaters Rha and Rhb, lead sections L2 and L5, and thermometers Rka are covered with a silicon nitride film 140. All of the heaters Rha and Rhb, thermometers Rka, and lead sections L2 and L5 are formed of monocrystallized silicon films. The monocrystallized silicon films are pattern-formed as areas where they do not become thermal oxidation films even in thermal oxidation treatment. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体传感器，其可以通过使用电阻器来适当地确保在检测规定物理量时的感测精度。解决方案：在该半导体传感器中，在半导体衬底110上形成氧化硅膜120.此外，上游侧加热器Rha，下游侧加热器Rhb，引线部L2和L5以及上游侧温度计Rka形成在氧化硅膜120上。加热器Rha和Rhb，引线部分L2和L5以及温度计Rka被氮化硅膜140覆盖。所有加热器Rha和Rhb，温度计Rka和引线部分L2 L5由单晶硅膜形成。单晶硅膜的图案形成为即使在热氧化处理中它们也不会变成热氧化膜的区域。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2004212401A Semiconductor dynamic amount sensor and its manufacturing method 审中-公开
公开(公告)号：JP2004212401A
公开(公告)日：2004-07-29
申请号：JP2004034697
申请日：2004-02-12
申请人： Denso Corp , 株式会社デンソー
发明人： YAMAMOTO TOSHIMASA , TAKEUCHI YUKIHIRO , OTSUKA YOSHINORI , KANO KAZUHIKO
IPC分类号： G01P15/12 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor dynamic amount (such as acceleration) sensor which is provided with a movable electrode arranged at a predetermined interval from a semiconductor substrate and having a beam part and a grid part, and which can be improved in productivity, and also to provide its manufacturing process. SOLUTION: The movable electrode 13 comprises a grid 131 constituted of a lattice member and four beam parts 132 supporting the grid 131. The beam parts 132 are fixed onto a P type semiconductor substrate 10 via an insulating film 12. The width of each lattice is formed so as to be the same as that of the beam parts 132 (for example, about 4 μm). Thus, in manufacturing the sensor, a sacrifice layer under the grid 131 and beam parts 132 is etched so that the grid 131 can be made movable for the same time as the beam parts 132 are made movable. Accordingly, the etching can be completed in the irreducible minimum time so that the productivity can be improved. COPYRIGHT: (C)2004,JPO&NCIPI

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