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1. 发明专利

JP2010212333A Method of heat-treating silicon wafer 有权
标题翻译：热处理硅砂的方法
公开(公告)号：JP2010212333A
公开(公告)日：2010-09-24
申请号：JP2009054703
申请日：2009-03-09
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , ARAKI KOJI , AOKI TATSUHIKO , SUDO HARUO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/322 , C30B29/06 , C30B33/02 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method of heat-treating a silicon wafer, the method eliminating a crystal defect of a COP etc., at a surface part of the wafer to become a device active region, generating a BMD at a bulk part with high density, and further suppressing a slip generated during an RTP.
SOLUTION: In the method of heat-treating the silicon wafer obtained by slicing a silicon single-crystal ingot manufactured by a Czochralski method, a rapid heating and rapid cooling heat treatment is carried out in an oxygen-containing atmosphere under a condition in which maximum reaching temperature is equal to or higher than 1,300°C and equal to or lower than the fusion point of silicon and a temperature lowering speed from the maximum reaching temperature is 50 to 145°C/second.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在晶片的表面部分处理硅晶片的方法，该方法消除了COP等的晶体缺陷，以成为器件有源区，从而产生BMD在高密度的体积部分，并进一步抑制在RTP期间产生的滑动。解决方案：在通过切片通过切克劳斯基法（Czochralski）制造的硅单晶锭进行切片获得的硅晶片的热处理方法中，在含氧气氛中在条件下进行快速加热和快速冷却热处理其中最大达到温度等于或高于1300℃且等于或低于硅的熔点，并且从最大到达温度的降温速度为50至145℃/秒。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2011171402A Method of heat treating silicon wafer 有权
标题翻译：热处理硅砂的方法
公开(公告)号：JP2011171402A
公开(公告)日：2011-09-01
申请号：JP2010031968
申请日：2010-02-17
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , ARAKI KOJI , SENSAI KOJI , AOKI TATSUHIKO , SUDO HARUO , SAITO HIROYUKI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/322 , C30B29/06 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a method of heat treating a silicon wafer reducing crystalline defects such as voids in a front surface part of a wafer serving as a device active region and suppressing elongation of slip dislocation under a load such as a thermal stress in a device process.
SOLUTION: In the method of heat treating the silicon wafer obtained by slicing a silicon monocrystalline ingot manufactured by Czochralski method, a rapid heating and rapid cooling heat treatment is performed on the silicon wafer which is at least 1.4×10
18 atoms/cm
3 in oxygen concentration under an oxygen-containing atmosphere and at a highest end-point temperature which is at least 1,325°C and not more than the melting point of the silicon.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种对硅晶片进行热处理的方法，减少了晶片的前表面部分中的诸如空隙的晶体缺陷，并且抑制了在诸如设备过程中的热应力。解决方案：在通过切割由Czochralski法制造的硅单晶锭获得的硅晶片的热处理方法中，对至少为1.4×10 的硅晶片进行快速加热和快速冷却热处理， 18 原子/ cm 3 / SP>在氧气浓度下，在最高终点温度为至少1325℃且不大于硅的熔点。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010177494A Method for heat treatment of silicon wafer 有权
标题翻译：硅氧烷热处理方法
公开(公告)号：JP2010177494A
公开(公告)日：2010-08-12
申请号：JP2009019268
申请日：2009-01-30
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , ARAKI KOJI , AOKI TATSUHIKO , SUDO HARUO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/26 , H01L21/316 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method for heat treatment of a silicon wafer capable of inhibiting generation of dislocation and degradation in wafer surface roughness during a semiconductor device process. SOLUTION: The method for heat treatment of the wafer obtained by slicing a silicon single-crystal ingot manufactured by the Czochralski method includes steps of quickly heating and quickly cooling in a mixture gas atmosphere of oxygen and argon with a partial pressure of oxygen of 1.0%≤ and ≤20% at the highest achieved temperature of ≥1,300°C for retention time of ≥1 second and ≤60 seconds at a silicon melting point or lower, and forming an oxide film with a thickness of ≤24.3 nm on the wafer surface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体器件工艺期间能够抑制晶片表面粗糙度产生位错和劣化的硅晶片的热处理方法。解决方案：通过切片由切克劳斯基法制造的硅单晶锭进行切片获得的晶片的热处理方法包括在氧气和氩气的混合气体气氛中以氧气分压快速加热并快速冷却的步骤在最高实现温度≥1300℃，保持时间≥1秒，硅熔点以下≤60秒时，为1.0％≤≤20％，形成厚度≤24.3nm的氧化膜晶圆表面。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2011029429A Method for heat treatment of silicon wafer 有权
标题翻译：硅氧烷热处理方法
公开(公告)号：JP2011029429A
公开(公告)日：2011-02-10
申请号：JP2009174024
申请日：2009-07-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , ARAKI KOJI , AOKI TATSUHIKO , SUDO HARUO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/26 , H01L21/324
CPC分类号： H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide a method for heat treatment of a silicon wafer, capable of improving the reduction force of Grown-in faults while suppressing the occurrence of a slip at RTP, and also improving the surface roughness of a silicon wafer obtained after the RTP.
SOLUTION: In a rare gas atmosphere, the temperature of the silicon wafer is rapidly raised to a first temperature T
1 of ≥1,300°C and equal to or less than the melting point of silicon at a first temperature rise rate, kept at the first temperature T
1 , and rapidly reduced to a second temperature T
2 of ≥400°C and ≤800°C at a first temperature reduction rate. Next, after the atmosphere is switched from the rare gas atmosphere to an oxygen containing atmosphere that contains oxygen gas of ≥20 vol.% and ≤100 vol.%, the temperature of the silicon wafer is rapidly raised from the second temperature T
2 to a third temperature T
3 of ≥1,250°C and equal to or less than the melting point of silicon at a second temperature rise rate, kept at the third temperature T
3 , and rapidly reduced from the third temperature T
3 at a second temperature reduction rate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够在抑制RTP时出现滑移的情况下提高生长缺陷的还原力的硅晶片的热处理方法，并且还提高了硅的表面粗糙度在RTP之后获得的晶片。解决方案：在稀有气体气氛中，硅晶片的温度迅速升高至≥1300℃的第一温度T SB> 1 ，并且等于或小于硅的熔点第一温度上升速率保持在第一温度T 1 ，并且在第一温度下迅速降低至≥400℃的第二温度T SB> 2 降温率。接下来，在从稀有气体气氛切换到含有≥20体积％〜100体积％的氧气的含氧气氛后，从第二温度T 2 至≥250℃的第三温度T SB> 3 ，并且在第二温度升高速率下等于或小于硅的熔点，保持在第三温度T 3 ，并且以第二温度降低速率从第三温度T 3 快速降低。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010283076A Method for heat treatment of silicon wafer 有权
标题翻译：硅氧烷热处理方法
公开(公告)号：JP2010283076A
公开(公告)日：2010-12-16
申请号：JP2009134252
申请日：2009-06-03
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , ARAKI KOJI , SENSAI KOJI , AOKI TATSUHIKO , SUDO HARUO , SAITO HIROYUKI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/324 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment method of a silicon wafer, capable of largely reducing a void defect in regions of a surface and a surface layer of a device active layer even if rapid-heating/rapid-cooling heat treatment which takes place as second-time-scale heat treatment is used. SOLUTION: The heat treatment method is provided for heat treatment on a silicon wafer W sliced from a silicon monocrystal ingot grown by the Czochralski method. The heat treatment method includes the steps of: supplying an inert gas into a first space 20a with which a surface W1 of the silicon wafer W with a semiconductor device formed comes into contact; and supplying an oxidizing gas into a second space 20b with which a rear face W2 of the silicon wafer W comes into contact, so as to make rapid-heating/rapid-cooling heat treatment with the ultimate temperature of ≥1,300°C and ≤1,400°C. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供硅晶片的热处理方法，即使快速加热/快速冷却热也能够大大减少器件活性层的表面和表面层的区域中的空隙缺陷使用作为二次规模热处理的处理。解决方案：提供热处理方法，用于对通过切克劳斯基法生长的硅单晶锭切片的硅晶片W进行热处理。该热处理方法包括以下步骤：向形成有半导体器件的硅晶片W的表面W1接触的第一空间20a供给惰性气体; 并将氧化气体供给到硅晶片W的背面W2与之接触的第二空间20b中，以便在最高温度≥1300℃和≤1,400℃下进行快速加热/快速冷却热处理 C。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010177495A Method for heat treatment of silicon wafer 有权
标题翻译：硅氧烷热处理方法
公开(公告)号：JP2010177495A
公开(公告)日：2010-08-12
申请号：JP2009019269
申请日：2009-01-30
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , ARAKI KOJI , AOKI TATSUHIKO , SUDO HARUO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/26 , C30B29/06 , C30B33/02 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method for heat treatment of a silicon wafer capable of inhibiting generation of dislocation and aggravation in wafer surface roughness during a semiconductor device process. SOLUTION: The method for heat treatment of the wafer obtained by slicing a silicon single-crystal ingot manufactured by the Czochralski method includes steps of quickly heating and quickly cooling in a mixture gas atmosphere of oxygen and argon with a partial pressure of oxygen of ≥1.0% and ≤20% at the highest achieved temperature of ≥1,300°C for retention time of ≥1 second and ≤60 seconds at a silicon melting point or lower, and forming an oxide film with a thickness of ≤9.1 nm on the wafer surface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体器件工艺期间能够抑制晶片表面粗糙度产生位错和加重的硅晶片的热处理方法。解决方案：通过切片由切克劳斯基法制造的硅单晶锭进行切片获得的晶片的热处理方法包括在氧气和氩气的混合气体气氛中以氧气分压快速加热并快速冷却的步骤在最高实现温度≥1300℃，≥1秒的保留时间和≤60秒的硅熔点或更低的温度下，≥1.0％和≤20％，并且形成厚度≤9.1nm的氧化膜晶圆表面。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010040587A Method of manufacturing silicon wafer 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：JP2010040587A
公开(公告)日：2010-02-18
申请号：JP2008198680
申请日：2008-07-31
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ISOGAI HIROMICHI , SENDA TAKESHI , TOYODA EIJI , MURAYAMA KUMIKO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/26 , C30B15/00 , C30B29/06 , C30B33/02 , H01L21/322
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon wafer that improves reducing effect of Grown-in defects while suppressing a slip occurrence during a rapid-heating and rapid-cooling heat treatment.
SOLUTION: The method of manufacturing the silicon wafer includes the rapid-heating and rapid-cooling heat treatment on the silicon wafer manufactured from a silicon single-crystal ingot grown in a Czochralski method at a maximum ultimate temperature (T
1 ) of 1,300 to 1,380°C in an oxidizing gas atmosphere of 20 to 100% in oxygen gas partial pressure.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造硅晶片的方法，该方法在抑制快速加热和快速冷却热处理期间的滑动发生的同时，提高生长缺陷的减少效果。解决方案：制造硅晶片的方法包括在以最高极限温度（T SB）下以切克拉斯基法生长的硅单晶锭制造的硅晶片上的快速加热和快速冷却热处理在氧分压为20〜100％的氧化气体气氛中为1,300〜1380℃。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2012201564A Silicon single crystal pulling apparatus, and method of pulling silicon single crystal using the same 有权
标题翻译：硅单晶拉丝装置及其使用硅单晶的方法
公开(公告)号：JP2012201564A
公开(公告)日：2012-10-22
申请号：JP2011068925
申请日：2011-03-25
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： TOYODA SATOKO , MINAMI TOSHIRO , MAEDA SUSUMU , NAGAI YUTA
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling apparatus capable of discharging carbon-containing gas generated from a carbon crucible efficiently to the outside of a furnace without complicating the apparatus, and pulling a silicon single crystal having a low carbon concentration without increasing manufacturing cost, and to provide a pulling method of the silicon single crystal using the apparatus.SOLUTION: This silicon single crystal pulling apparatus 1 includes a carbon crucible 10b holding a quartz crucible 10a on the inner surface, and also includes a flow-straightening member 40 including a cylindrical flow-straightening part, provided in the loaded state on the upper end 10ba of the carbon crucible 10b, for shielding a part of carrier gas G passing a first space S1 over the upper end of the carbon crucible 10b, and for heightening flow velocity of the carrier gas G passing a second space S2 just over the upper end of the carbon crucible 10b, which is a lower part of the first space S1.
摘要翻译：要解决的问题：提供一种能够将从碳坩埚产生的含碳气体有效地排放到炉外的硅单晶拉制装置，而不会使装置复杂化，并且拉动具有低碳的硅单晶浓度而不增加制造成本，并且使用该装置提供单晶硅的拉制方法。解决方案：该硅单晶拉制装置1包括在内表面上保持石英坩埚10a的碳坩埚10b，并且还包括流动整流构件40，该整流构件40包括圆柱形流动矫正部，其以负载状态设置在碳坩埚10b的上端部10ba，用于遮蔽通过碳坩埚10b的上端的第一空间S1的载气G的一部分，并且提高经过刚刚过去的第二空间S2的载气G的流速作为第一空间S1的下部的碳坩埚10b的上端部。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2010040589A Method of manufacturing silicon wafer 有权
标题翻译：制造硅波的方法
公开(公告)号：JP2010040589A
公开(公告)日：2010-02-18
申请号：JP2008198682
申请日：2008-07-31
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ISOGAI HIROMICHI , SENDA TAKESHI , TOYODA EIJI , MURAYAMA KUMIKO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/324 , C30B29/06 , C30B33/02 , H01L21/26
CPC分类号： C30B29/06 , C30B15/00 , C30B33/02 , H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon wafer that improves reducing effect of a Grown-in defect while suppressing a slip occurrence during a rapid-heating and rapid-cooling heat treatment, and also improves surface roughness of an obtained silicon wafer after the rapid-heating and rapid-cooling heat treatment.
SOLUTION: The method of manufacturing the silicon wafer includes: a first heat treatment process in which the silicon wafer is rapidly raised in temperature up to a first temperature of ≥1,300°C and equal to or below the melting point of silicon in a noble gas atmosphere containing an oxygen gas of 0.01 to 1.00 vol.%, and held at the first temperature; and a second heat treatment process in which the noble gas atmosphere is changed to an oxygen gas containing atmosphere containing an oxygen gas of 20 to 100 vol.% at the first temperature after the first heat treatment process to further hold the silicon wafer at the first temperature, and then the temperature is rapidly lowered from the first temperature.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造硅晶片的方法，其在抑制快速加热和快速冷却热处理期间的滑动发生的同时，提高成长缺陷的减少效果，并且还提高了表面粗糙度在快速加热和快速冷却热处理后获得的硅晶片。解决方案：制造硅晶片的方法包括：第一热处理工艺，其中硅晶片的温度快速升高至第一温度≥1300℃且等于或低于硅的熔点含有0.01〜1.00体积％的氧气的惰性气体气氛，并保持在第一温度; 以及第二热处理工序，其中在第一热处理工艺之后的第一温度下，惰性气体气氛变为含氧气体含有20〜100体积％的氧气的气体，以进一步将硅晶片保持在第一温度，然后温度从第一温度迅速降低。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010040588A Silicon wafer 审中-公开
标题翻译：硅胶
公开(公告)号：JP2010040588A
公开(公告)日：2010-02-18
申请号：JP2008198681
申请日：2008-07-31
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ISOGAI HIROMICHI , SENDA TAKESHI , TOYODA EIJI , MURAYAMA KUMIKO , ARAKI KOJI , AOKI TATSUHIKO , SUDO HARUO , MOCHIZUKI YOICHIRO , KOBAYASHI AKIHIKO , FU SHINRIN , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/322 , C30B29/06 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer that is made free from a Grown-in defect, has high gettering effect, prevents BMD from being deposited in a device active region, and is improved in thermal strength of the device active region.
SOLUTION: The silicon wafer has a high-oxygen-concentration region where a solid solution oxygen concentration is ≥0.7×10
18 atoms/cm
3 in a no-defect region (DZ layer) 12 including at least the device active region of the silicon wafer 10, and contains interstitial silicon 14 in the no-defect region 12 in a supersaturation state.
COPYRIGHT: (C)2010,JPO&INPIT

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